JP5735428B2 - ハニカム構造体 - Google Patents
ハニカム構造体 Download PDFInfo
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- JP5735428B2 JP5735428B2 JP2011533073A JP2011533073A JP5735428B2 JP 5735428 B2 JP5735428 B2 JP 5735428B2 JP 2011533073 A JP2011533073 A JP 2011533073A JP 2011533073 A JP2011533073 A JP 2011533073A JP 5735428 B2 JP5735428 B2 JP 5735428B2
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- JP
- Japan
- Prior art keywords
- honeycomb structure
- mass
- partition wall
- silicon carbide
- silicon
- Prior art date
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
- F01N3/08—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous
- F01N3/10—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust
- F01N3/24—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust characterised by constructional aspects of converting apparatus
- F01N3/28—Construction of catalytic reactors
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- B01D46/2429—Honeycomb filters characterized by parameters related to the physical properties of the honeycomb structure material of the honeycomb walls or cells
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Description
本発明のハニカム構造体の一の実施形態は、図1及び図2に示すように、流体の流路となる一方の端面11から他方の端面12まで延びる複数のセル2を区画形成する多孔質の隔壁1と、最外周に位置する(隔壁1全体の外周を取り囲むように配設された)外周壁3とを有するハニカム構造部4を備えるものであり、隔壁1及び外周壁3が、骨材としての炭化珪素粒子(炭化珪素)、及び炭化珪素粒子を結合させる結合材としての珪素を含有し、隔壁1の厚さが50〜200μmであり、セル密度が50〜150セル/cm2であり、骨材としての炭化珪素の平均粒子径が3〜40μmであり、400℃における体積電気抵抗が1〜40Ωcmである。本実施形態のハニカム構造体100は、ハニカム構造部4からなるものである。図1は、本発明のハニカム構造体の一の実施形態を模式的に示す斜視図である。図2は、本発明のハニカム構造体の一の実施形態の、セルの延びる方向に平行な断面を示す模式図である。
次に、本発明のハニカム構造体の一の実施形態の製造方法について説明する。
セラミックス原料として、炭化珪素(SiC)粉末と金属珪素(Si)粉末とを80:20の質量割合で混合し、これに、焼結助剤として炭酸ストロンチウム、バインダとしてヒドロキシプロピルメチルセルロース、造孔材として吸水性樹脂を添加すると共に、水を添加して成形原料とし、成形原料を混練し、真空土練機により円柱状の坏土を作製した。バインダの含有量は炭化珪素(SiC)粉末と金属珪素(Si)粉末の合計に対し7質量%であり、炭酸ストロンチウムの含有量は炭化珪素(SiC)粉末と金属珪素(Si)粉末の合計に対し1質量%であり、造孔材の含有量は炭化珪素(SiC)粉末と金属珪素(Si)粉末の合計に対し3質量%であり、水の含有量は炭化珪素(SiC)粉末と金属珪素(Si)粉末の合計に対し42質量%であった。炭化珪素粉末の平均粒子径は20μmであり、金属珪素粉末の平均粒子径は6μmであった。また、造孔材の平均粒子径は、20μmであった。炭化珪素、金属珪素及び造孔材の平均粒子径は、レーザー回折法で測定した値である。
ハニカム構造体と同じ材質で10mm×10mm×50mmの試験片を作成した。両端部全面に銀ペーストを塗布し、配線して通電できるようにした。試験片に電圧印加電流測定装置をつなぎ電圧を印加した。試験片中央部に熱伝対を設置し、電圧印加時の試験片温度の経時変化をレコーダーにて確認した。100〜200V印加し、試験片温度が400℃になった時点で流れた電流値及び電圧値と、試験片寸法から体積電気抵抗を算出した。
底面(端面)が直径93mmの円形であり、セルの延びる方向における長さが100mmであるハニカム構造体(担体)の側面に、銀ペーストを塗布し、配線して通電できるようにした。担体に電圧印加電流測定装置をつなぎ電圧を印加した。熱電対を用いて、600V印加時の担体内の温度分布を測定し(ハニカム構造体内を、均等に39箇所、温度測定する。)、担体内の平均温度が400℃になった時点で流れた電流値及び電圧値から、担体電気抵抗を算出した。
上記「担体電気抵抗」の試験と同様にして、600V印加し、担体内の平均温度が400℃になった時点で流れた電流値を測定した。
ハニカム構造体の圧力損失はハニカム構造体の断面の開口率で評価した。開口率は、ハニカム構造体の断面積(セルの延びる方向に直交する断面の面積)に対する、ハニカム構造体の「セルの延びる方向」に直交する断面における「セル(開口部)の合計面積」、の比率とした。
「SiC平均粒子径(μm)」、「SiC配合量(質量%)」、「Si平均粒子径(μm)」、「Si配合量(質量%)」、「造孔材平均粒子径(μm)」、「造孔材含有量(造孔材)(質量%)」、「水含有量(水)(質量%)」、「隔壁の気孔率(気孔率)(%)」、「隔壁の平均細孔径(平均細孔径)(μm)」、「隔壁厚さ(μm)」、「セル密度(セル/cm2)」及び「セル形状」を表1に示すように変化させた以外は、実施例1と同様にしてハニカム構造体を作製した。実施例1の場合と同様にして、「ハニカム構造体の体積電気抵抗(体積電気抵抗)(Ωcm)」、「ハニカム構造体の電気抵抗(担体電気抵抗)(Ω)」、「電流値安定性」及び「圧力損失」を測定した。結果を表1に示す。
Claims (6)
- 流体の流路となる一方の端面から他方の端面まで延びる複数のセルを区画形成する多孔質の隔壁と、最外周に位置する外周壁とを有するハニカム構造部を備え、
前記隔壁及び前記外周壁が、骨材としての炭化珪素粒子、及び前記炭化珪素粒子を結合させる結合材としての珪素を含有し、
前記隔壁の厚さが50〜200μmであり、セル密度が50〜150セル/cm2であり、前記骨材としての炭化珪素粒子の平均粒子径が3〜40μmであり、400℃における体積電気抵抗が1〜40Ωcmであるハニカム構造体。 - 前記骨材としての炭化珪素粒子の質量と前記結合材としての珪素の質量の合計に対する、前記結合材としての珪素の質量の比率が、10〜40質量%である請求項1に記載のハニカム構造体。
- 前記隔壁の気孔率が30〜60%であり、前記隔壁の平均細孔径が2〜20μmである請求項1又は2に記載のハニカム構造体。
- 400℃における電気抵抗が1〜30Ωである請求項1〜3のいずれかに記載のハニカム構造体。
- 前記隔壁の厚さが70〜130μmであり、セル密度が70〜100セル/cm2であり、前記隔壁の気孔率が35〜45%であり、前記隔壁の平均細孔径が10〜20μmであり、前記骨材としての炭化珪素粒子の質量と前記結合材としての珪素の質量の合計に対する、前記結合材としての珪素の質量の比率が、15〜35質量%であり、400℃における体積電気抵抗が10〜35Ωcmである請求項1〜4のいずれかに記載のハニカム構造体。
- 前記セルの延びる方向に直交する断面における前記セルの形状が、四角形又は六角形である請求項1〜5のいずれかに記載のハニカム構造体。
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