JP5733616B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5733616B2 JP5733616B2 JP2011095345A JP2011095345A JP5733616B2 JP 5733616 B2 JP5733616 B2 JP 5733616B2 JP 2011095345 A JP2011095345 A JP 2011095345A JP 2011095345 A JP2011095345 A JP 2011095345A JP 5733616 B2 JP5733616 B2 JP 5733616B2
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- air bridge
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- 239000004065 semiconductor Substances 0.000 title claims description 90
- 230000000052 comparative effect Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- -1 InAlGaAs Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4821—Bridge structure with air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
12 ドレインフィンガー
14 ゲートフィンガー
16 ソースバスライン
18 ドレインバスライン
20 ゲートバスライン
22 活性領域
24 第1エアブリッジ
26 第2エアブリッジ
34 半導体層
36 ソース電極
38 下層配線層
40 上層配線層
42 ゲート配線層
44 ドレイン電極
46 配線層
48 第3エアブリッジ
50 固定部
Claims (8)
- 半導体層上に設けられ、互いに並列に配置された複数のソースフィンガーと、
前記半導体層上に設けられ、前記複数のソースフィンガーと交互に配置された複数のドレインフィンガーと、
前記半導体層上に設けられ、前記ソースフィンガーと前記ドレインフィンガーとの間にそれぞれ配置された複数のゲートフィンガーと、
前記複数のゲートフィンガー同士、前記複数のソースフィンガー同士、および前記複数のドレインフィンガー同士のいずれかを共通に接続するバスラインと、
前記複数のソースフィンガー、前記複数のドレインフィンガー、および前記複数のゲートフィンガーのいずれかに設けられ、前記バスライン上を跨いで前記半導体層との間に第1空隙を有する複数の第1エアブリッジと、
前記第1空隙上の前記第1エアブリッジに接続することで隣接する前記複数の第1エアブリッジ同士の間を接続し、前記半導体層との間に第2空隙を有する第2エアブリッジと、を備えることを特徴とする半導体装置。 - 前記第2エアブリッジは、前記第1エアブリッジの延在方向における中央部同士を接続してなることを特徴とする請求項1記載の半導体装置。
- 前記複数のソースフィンガー、前記複数のドレインフィンガー、および前記複数のゲートフィンガーのうち最も外側に位置するフィンガーの外側に設けられた固定部と、
前記固定部と前記複数の第1エアブリッジのうち最も外側に位置する第1エアブリッジとの間を接続する第3エアブリッジと、を備えることを特徴とする請求項1または2記載の半導体装置。 - 前記第3エアブリッジは、前記最も外側に位置する第1エアブリッジの中央部に接続されてなることを特徴とする請求項3記載の半導体装置。
- 前記第1エアブリッジの厚さと幅の積に対する長さの比は、0.1〜0.6であることを特徴とする請求項1から4のいずれか一項記載の半導体装置。
- 前記複数の第1エアブリッジは、前記複数のソースフィンガーあるいは前記複数のドレインフィンガーのいずれかに設けられ、
前記複数の第1エアブリッジが設けられた前記複数のソースフィンガーあるいは前記複数のドレインフィンガーは、前記半導体層の活性領域においては、オーミック電極上に下層配線層と上層配線層とを備えた構造を有し、
前記複数の第1エアブリッジは、前記下層配線層と前記上層配線層のうち、前記上層配線層のみで形成され、
前記複数のゲートフィンガー同士を接続するゲートバスラインは、ゲート配線層と前記下層配線層とで構成されてなることを特徴とする請求項1から5のいずれか一項記載の半導体装置。 - 前記複数の第1エアブリッジは、前記複数のソースフィンガーあるいは前記複数のドレインフィンガーのいずれかに設けられ、
前記複数の第1エアブリッジが設けられた前記複数のソースフィンガーあるいは前記複数のドレインフィンガーは、前記半導体層の活性領域において、オーミック電極上に配線層を備えた構造を有し、
前記第1エアブリッジは、前記配線層と同じ厚みを有することを特徴とする請求項1から5のいずれか一項記載の半導体装置。 - 前記第2エアブリッジは、前記バスラインを覆うように設けられていることを特徴とする請求項1から7のいずれか一項記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011095345A JP5733616B2 (ja) | 2011-04-21 | 2011-04-21 | 半導体装置 |
US13/451,766 US9136205B2 (en) | 2011-04-21 | 2012-04-20 | Semiconductor device |
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JP2011095345A JP5733616B2 (ja) | 2011-04-21 | 2011-04-21 | 半導体装置 |
Publications (2)
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JP2012227437A JP2012227437A (ja) | 2012-11-15 |
JP5733616B2 true JP5733616B2 (ja) | 2015-06-10 |
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JP2011095345A Active JP5733616B2 (ja) | 2011-04-21 | 2011-04-21 | 半導体装置 |
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US (1) | US9136205B2 (ja) |
JP (1) | JP5733616B2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8896034B1 (en) * | 2010-08-11 | 2014-11-25 | Sarda Technologies, Inc. | Radio frequency and microwave devices and methods of use |
US9236378B2 (en) | 2010-08-11 | 2016-01-12 | Sarda Technologies, Inc. | Integrated switch devices |
JP5989264B1 (ja) * | 2015-02-04 | 2016-09-07 | 三菱電機株式会社 | 半導体装置 |
CN105206590B (zh) * | 2015-09-17 | 2017-11-03 | 浙江大学 | 空气桥侧引的pHEMT微波功放管芯横向结构及pHEMT |
US10153306B2 (en) * | 2016-02-29 | 2018-12-11 | Skyworks Solutions, Inc. | Transistor layout with low aspect ratio |
US10128365B2 (en) | 2016-03-17 | 2018-11-13 | Cree, Inc. | Bypassed gate transistors having improved stability |
US9947616B2 (en) * | 2016-03-17 | 2018-04-17 | Cree, Inc. | High power MMIC devices having bypassed gate transistors |
US9786660B1 (en) * | 2016-03-17 | 2017-10-10 | Cree, Inc. | Transistor with bypassed gate structure field |
US9774322B1 (en) | 2016-06-22 | 2017-09-26 | Sarda Technologies, Inc. | Gate driver for depletion-mode transistors |
US10777550B2 (en) * | 2016-12-16 | 2020-09-15 | Mitsubishi Electric Corporation | Semiconductor device |
JP6222419B1 (ja) * | 2017-04-04 | 2017-11-01 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
WO2019229982A1 (ja) | 2018-06-01 | 2019-12-05 | 三菱電機株式会社 | 半導体装置 |
US10483352B1 (en) * | 2018-07-11 | 2019-11-19 | Cree, Inc. | High power transistor with interior-fed gate fingers |
US10763334B2 (en) | 2018-07-11 | 2020-09-01 | Cree, Inc. | Drain and/or gate interconnect and finger structure |
US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
JP7155482B2 (ja) * | 2018-09-13 | 2022-10-19 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP6854985B2 (ja) * | 2018-11-30 | 2021-04-07 | 三菱電機株式会社 | 半導体装置 |
US10770415B2 (en) | 2018-12-04 | 2020-09-08 | Cree, Inc. | Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation |
US11417746B2 (en) | 2019-04-24 | 2022-08-16 | Wolfspeed, Inc. | High power transistor with interior-fed fingers |
US11302609B2 (en) | 2020-08-31 | 2022-04-12 | Nxp Usa, Inc. | Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same |
CN117438458B (zh) * | 2023-12-20 | 2024-04-09 | 合肥艾创微电子科技有限公司 | 一种氮化镓器件结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0684955A (ja) | 1992-08-31 | 1994-03-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
JP3333560B2 (ja) * | 1992-10-23 | 2002-10-15 | リコーエレメックス株式会社 | シリコン基板のエッチング方法 |
US5646450A (en) * | 1994-06-01 | 1997-07-08 | Raytheon Company | Semiconductor structures and method of manufacturing |
JPH08172104A (ja) | 1994-12-20 | 1996-07-02 | Nec Corp | 半導体装置 |
JP2629643B2 (ja) * | 1995-03-31 | 1997-07-09 | 日本電気株式会社 | 電界効果トランジスタ |
DE19522364C1 (de) * | 1995-06-20 | 1996-07-04 | Siemens Ag | Halbleiter-Bauelement |
JPH1070189A (ja) * | 1996-08-26 | 1998-03-10 | Mitsubishi Electric Corp | 半導体装置 |
US6201283B1 (en) * | 1999-09-08 | 2001-03-13 | Trw Inc. | Field effect transistor with double sided airbridge |
US7049219B1 (en) * | 2002-11-08 | 2006-05-23 | Micron Technology, Inc. | Coating of copper and silver air bridge structures to improve electromigration resistance and other applications |
JP4849788B2 (ja) * | 2004-09-09 | 2012-01-11 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP2010027909A (ja) * | 2008-07-22 | 2010-02-04 | Toshiba Corp | 半導体装置 |
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2011
- 2011-04-21 JP JP2011095345A patent/JP5733616B2/ja active Active
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2012
- 2012-04-20 US US13/451,766 patent/US9136205B2/en active Active
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US20120267795A1 (en) | 2012-10-25 |
US9136205B2 (en) | 2015-09-15 |
JP2012227437A (ja) | 2012-11-15 |
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