JP5684700B2 - 発光装置および照明装置 - Google Patents
発光装置および照明装置 Download PDFInfo
- Publication number
- JP5684700B2 JP5684700B2 JP2011507177A JP2011507177A JP5684700B2 JP 5684700 B2 JP5684700 B2 JP 5684700B2 JP 2011507177 A JP2011507177 A JP 2011507177A JP 2011507177 A JP2011507177 A JP 2011507177A JP 5684700 B2 JP5684700 B2 JP 5684700B2
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- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- light reflecting
- sealing member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000007789 sealing Methods 0.000 claims description 125
- 238000000354 decomposition reaction Methods 0.000 claims description 47
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 44
- 229910001882 dioxygen Inorganic materials 0.000 claims description 44
- 230000035699 permeability Effects 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052709 silver Inorganic materials 0.000 claims description 22
- 239000004332 silver Substances 0.000 claims description 22
- 239000011256 inorganic filler Substances 0.000 claims description 21
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000003822 epoxy resin Substances 0.000 claims description 12
- 229920000647 polyepoxide Polymers 0.000 claims description 12
- 239000000047 product Substances 0.000 description 60
- 239000000758 substrate Substances 0.000 description 50
- 230000004907 flux Effects 0.000 description 40
- 238000012423 maintenance Methods 0.000 description 37
- 239000010410 layer Substances 0.000 description 33
- 229920005989 resin Polymers 0.000 description 30
- 239000011347 resin Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 239000004020 conductor Substances 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 13
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000005286 illumination Methods 0.000 description 11
- 239000011889 copper foil Substances 0.000 description 8
- 238000002845 discoloration Methods 0.000 description 8
- 238000001579 optical reflectometry Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000000945 filler Substances 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000805 composite resin Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000007857 degradation product Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Description
したがって、封止部材で覆われた光反射面の上に前記物質が到達するのを防止できるとともに、たとえ前記物質が光反射面の上に到達したとしても、到達した物質の量そのものを少なく抑えることができる。よって、光反射面の上に黒味を帯びた汚れが発生し難くなる。
発光装置を支持する本体と;を具備している。
以下本発明の第1の実施の形態を、図1ないし図3に基づいて説明する。
図4は、本発明の第2の実施の形態に係る発光装置を開示している。
図5および図6は、本発明の第3の実施の形態に係る発光装置を開示している。
図7および図8は、本発明の第4の実施の形態を開示している。
図9は、本発明の第5の実施の形態に係る発光装置を開示している。
図10ないし図12は、本発明の第6の実施の形態を開示している。
図13は、本発明の第7の実施の形態を開示している。
図14および図15は、本発明の第8の実施の形態を開示している。
Claims (6)
- 金属製のベースと;
前記ベースの上に設けられ、エポキシ樹脂製の基材および当該基材に添加された無機系フィラーを含む絶縁部と;
前記絶縁部の上に設けられた銀製の光反射面と;
前記光反射面の上に実装された発熱する発光素子と;
前記絶縁部、前記光反射面および前記発光素子を覆うとともに、酸素ガス透過率が1000cc/m2・day以上、40000cc/m2・day以下に規定された透光性を有する封止部材と;
を具備し、
前記絶縁部の無機系フィラーは、発光素子の点灯の影響によって前記絶縁部から生じる分解物の量を減少させ、かつ、前記絶縁部の接着性を損なわないよう前記基材に対する含有率が50%〜80%となるように構成されていることを特徴とする発光装置。 - 請求項1に記載の発光装置において、前記絶縁部の上に間隔をおいて並べられた複数の導電部をさらに備えており、各導電部に前記光反射面が形成された発光装置。
- 請求項1に記載の発光装置において、前記絶縁部の上に積層された光反射部をさらに備えており、当該光反射部に前記光反射面が形成された発光装置。
- 請求項1に記載の発光装置において、前記絶縁部の上に間隔をおいて並べられた複数の光反射部をさらに備えており、各光反射部に前記光反射面が形成された発光装置。
- 請求項1ないし請求項4のいずれか一項に記載の発光装置において、前記絶縁部は、前記発光素子が発する熱および光を受けた時にガス状の分解物を発する発光装置。
- 請求項1ないし請求項5のいずれか一項に記載された発光装置と;
前記発光装置を支持する本体と;
を具備した照明装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011507177A JP5684700B2 (ja) | 2009-03-31 | 2010-03-29 | 発光装置および照明装置 |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009085254 | 2009-03-31 | ||
JP2009085254 | 2009-03-31 | ||
JP2009118733 | 2009-05-15 | ||
JP2009118733 | 2009-05-15 | ||
PCT/JP2010/055536 WO2010113852A1 (ja) | 2009-03-31 | 2010-03-29 | 発光装置および照明装置 |
JP2011507177A JP5684700B2 (ja) | 2009-03-31 | 2010-03-29 | 発光装置および照明装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010113852A1 JPWO2010113852A1 (ja) | 2012-10-11 |
JP5684700B2 true JP5684700B2 (ja) | 2015-03-18 |
Family
ID=42828141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011507177A Expired - Fee Related JP5684700B2 (ja) | 2009-03-31 | 2010-03-29 | 発光装置および照明装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8783914B2 (ja) |
EP (1) | EP2416389A4 (ja) |
JP (1) | JP5684700B2 (ja) |
KR (1) | KR101293649B1 (ja) |
CN (1) | CN102369607A (ja) |
WO (1) | WO2010113852A1 (ja) |
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US20120061698A1 (en) | 2010-09-10 | 2012-03-15 | Toscano Lenora M | Method for Treating Metal Surfaces |
KR101826946B1 (ko) * | 2011-05-06 | 2018-02-07 | 서울반도체 주식회사 | 엘이디 캔들 램프 |
EP2711995B1 (en) * | 2011-05-16 | 2019-06-26 | Nichia Corporation | Light-emitting device and method for manufacturing same |
JP5817297B2 (ja) * | 2011-06-03 | 2015-11-18 | 東芝ライテック株式会社 | 発光装置及び照明装置 |
US10211380B2 (en) | 2011-07-21 | 2019-02-19 | Cree, Inc. | Light emitting devices and components having improved chemical resistance and related methods |
KR20140038553A (ko) * | 2011-07-21 | 2014-03-28 | 크리,인코포레이티드 | 향상된 화학적 내성을 위한 발광 장치 패키지들, 부품들 및 방법들 그리고 관련된 방법들 |
US10686107B2 (en) | 2011-07-21 | 2020-06-16 | Cree, Inc. | Light emitter devices and components with improved chemical resistance and related methods |
EP2741341B1 (en) * | 2011-08-01 | 2022-11-23 | Shikoku Instrumentation Co., Ltd. | Semiconductor device and fabrication method thereof |
US9496466B2 (en) | 2011-12-06 | 2016-11-15 | Cree, Inc. | Light emitter devices and methods, utilizing light emitting diodes (LEDs), for improved light extraction |
US8876334B2 (en) * | 2012-01-16 | 2014-11-04 | Paragon Semiconductor Lighting Technology Co., Ltd. | Light-mixing multichip package structure |
US9240530B2 (en) | 2012-02-13 | 2016-01-19 | Cree, Inc. | Light emitter devices having improved chemical and physical resistance and related methods |
AT14124U1 (de) * | 2012-02-13 | 2015-04-15 | Tridonic Jennersdorf Gmbh | LED-Modul mit Flächenverguß |
US9343441B2 (en) | 2012-02-13 | 2016-05-17 | Cree, Inc. | Light emitter devices having improved light output and related methods |
JP2013183089A (ja) | 2012-03-02 | 2013-09-12 | Idec Corp | 発光装置、照明装置、発光装置集合体および発光装置の製造方法 |
WO2013183693A1 (ja) * | 2012-06-07 | 2013-12-12 | 株式会社Steq | Led照明モジュールおよびled照明装置 |
JP6147977B2 (ja) | 2012-09-26 | 2017-06-14 | ローム株式会社 | Led照明器具およびledユニット |
JP6251081B2 (ja) * | 2014-03-03 | 2017-12-20 | 株式会社アイ・ライティング・システム | 反射ユニット、及びledモジュール |
JP5859050B2 (ja) * | 2014-03-31 | 2016-02-10 | 株式会社ソディック | 発光ダイオードモジュール |
DE102017115798A1 (de) * | 2017-07-13 | 2019-01-17 | Alanod Gmbh & Co. Kg | Reflektierendes Verbundmaterial, insbesondere für oberflächenmontierte Bauelemente (SMD), und lichtemittierende Vorrichtung mit einem derartigen Verbundmaterial |
CN111837245A (zh) * | 2017-10-19 | 2020-10-27 | 亮锐有限责任公司 | 发光器件封装 |
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- 2010-03-29 KR KR1020117022733A patent/KR101293649B1/ko not_active IP Right Cessation
- 2010-03-29 JP JP2011507177A patent/JP5684700B2/ja not_active Expired - Fee Related
- 2010-03-29 US US13/255,220 patent/US8783914B2/en not_active Expired - Fee Related
- 2010-03-29 EP EP10758623A patent/EP2416389A4/en not_active Withdrawn
- 2010-03-29 CN CN2010800158138A patent/CN102369607A/zh active Pending
- 2010-03-29 WO PCT/JP2010/055536 patent/WO2010113852A1/ja active Application Filing
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JP2000174347A (ja) * | 1998-12-07 | 2000-06-23 | Nichia Chem Ind Ltd | 光半導体装置 |
JP2007201444A (ja) * | 2005-12-26 | 2007-08-09 | Toshiba Lighting & Technology Corp | 発光装置 |
JP2007214245A (ja) * | 2006-02-08 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 基板の製造方法 |
Also Published As
Publication number | Publication date |
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US8783914B2 (en) | 2014-07-22 |
KR101293649B1 (ko) | 2013-08-13 |
KR20110121655A (ko) | 2011-11-07 |
US20120014110A1 (en) | 2012-01-19 |
JPWO2010113852A1 (ja) | 2012-10-11 |
CN102369607A (zh) | 2012-03-07 |
WO2010113852A1 (ja) | 2010-10-07 |
EP2416389A4 (en) | 2012-08-01 |
EP2416389A1 (en) | 2012-02-08 |
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