JP5633468B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5633468B2 JP5633468B2 JP2011106529A JP2011106529A JP5633468B2 JP 5633468 B2 JP5633468 B2 JP 5633468B2 JP 2011106529 A JP2011106529 A JP 2011106529A JP 2011106529 A JP2011106529 A JP 2011106529A JP 5633468 B2 JP5633468 B2 JP 5633468B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- gate
- semiconductor device
- element portion
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 130
- 239000012535 impurity Substances 0.000 claims description 13
- 230000008054 signal transmission Effects 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thyristors (AREA)
Description
図1は、本発明の実施の形態1に係る半導体装置を示す回路図である。本発明の実施の形態1に係る半導体装置は、第1素子部10と第2素子部12を備えている。第1素子部10と第2素子部12で1つの半導体素子を形成している。第1素子部10のゲート(第1ゲートと称する)と第2素子部12のゲート(第2ゲートと称する)は、信号伝送手段14に接続されている。信号伝送手段14は、第1ゲートと第2ゲートに個別に信号を供給する部分である。
図9は、本発明の実施の形態2に係る半導体装置の半導体素子を示す図である。半導体素子70は第1素子部72と第2素子部74を有している。第2素子部74は第1素子部72よりも大面積となるように形成されている。半導体装置のうち図9に示さない部分、及び半導体装置の動作については実施の形態1と同様である。
図10は、本発明の実施の形態3に係る半導体装置の半導体素子を示す図である。半導体素子80は第1素子部82と第2素子部84を有している。第2素子部84は第1素子部82を囲むように形成されている。第1素子部82の面積と第2素子部84の面積は等しい。半導体装置のうち図10に示さない部分、及び半導体装置の動作については実施の形態1と同様である。
本発明の実施の形態4に係る半導体素子は第1素子部と第2素子部でスイッチング速度を変化させたことを特徴とする。図14は、本発明の実施の形態4に係る半導体素子の断面図である。半導体素子は、コレクタ層40a及び40bからドリフト層30へキャリアを注入する伝導度変調型の半導体素子である。図14に示す断面図と図3に示す断面図との相違点はコレクタ層である。なお、半導体装置のうち図14に示さない部分、及び半導体装置の動作については実施の形態1と同様である。
本発明の実施の形態5に係る半導体素子は第1素子部と第2素子部の閾値電圧が異なることを特徴とする。図18は、本発明の実施の形態5に係る半導体素子の断面図である。ゲートG1及びG2には同一の信号が伝送される。
本発明の実施の形態6に係る半導体素子は、第1素子部と第2素子部のCR時定数が異なることを特徴とする。図20は、本発明の実施の形態6に係る半導体素子の断面図である。第1ゲート(G1)及び第2ゲート(G2)には同一の信号が伝送される。
Claims (8)
- 第1ゲートを有し前記第1ゲートからの信号でオンオフが制御される第1素子部と、第2ゲートを有し前記第2ゲートからの信号でオンオフが制御される第2素子部と、を有する半導体素子と、
前記第1ゲート及び前記第2ゲートに接続され、前記半導体素子をターンオンするときは前記第1素子部と前記第2素子部を同時にターンオンし、前記半導体素子をターンオフするときは前記第2素子部を前記第1素子部よりも遅延してターンオフするように前記第1ゲートと前記第2ゲートに信号を伝送する信号伝送手段と、を備え、
前記第2素子部は前記第1素子部を囲むように形成されたことを特徴とする半導体装置。 - 前記第2素子部は前記第1素子部よりも大面積であることを特徴とする請求項1に記載の半導体装置。
- 前記第2素子部は前記第1素子部よりも高速でスイッチングするように構成されたことを特徴とする請求項1又は2に記載の半導体装置。
- 前記半導体素子はコレクタ層からドリフト層にキャリアを注入する伝導度変調型の半導体素子であり、
前記第1素子部に形成された第1コレクタ層と、
前記第2素子部に形成された第2コレクタ層と、を備え、
前記第2コレクタ層の不純物濃度は前記第1コレクタ層の不純物濃度より低いことを特徴とする請求項3に記載の半導体装置。 - 前記第2素子部には、前記第1素子部よりも高密度でキャリアのライフタイムキラーが形成されたことを特徴とする請求項3に記載の半導体装置。
- 前記半導体素子に形成されたセンスパッドを備えたことを特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。
- 前記半導体素子はワイドバンドギャップ半導体によって形成されたことを特徴とする請求項1乃至6のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素、窒化ガリウム系材料又はダイアモンドであることを特徴とする請求項7に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011106529A JP5633468B2 (ja) | 2011-05-11 | 2011-05-11 | 半導体装置 |
US13/370,858 US8994147B2 (en) | 2011-05-11 | 2012-02-10 | Semiconductor device and semiconductor element |
DE102012203595.8A DE102012203595B4 (de) | 2011-05-11 | 2012-03-07 | Halbleitervorrichtung und Halbleiterelement |
CN201210196246.1A CN102779820B (zh) | 2011-05-11 | 2012-05-10 | 半导体装置以及半导体元件 |
KR1020140033329A KR101496786B1 (ko) | 2011-05-11 | 2014-03-21 | 반도체장치 및 반도체 소자 |
KR1020140061526A KR101504164B1 (ko) | 2011-05-11 | 2014-05-22 | 반도체장치 및 반도체 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011106529A JP5633468B2 (ja) | 2011-05-11 | 2011-05-11 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012238715A JP2012238715A (ja) | 2012-12-06 |
JP5633468B2 true JP5633468B2 (ja) | 2014-12-03 |
Family
ID=47070693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011106529A Active JP5633468B2 (ja) | 2011-05-11 | 2011-05-11 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8994147B2 (ja) |
JP (1) | JP5633468B2 (ja) |
KR (2) | KR101496786B1 (ja) |
CN (1) | CN102779820B (ja) |
DE (1) | DE102012203595B4 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6078961B2 (ja) | 2012-03-19 | 2017-02-15 | 富士電機株式会社 | 半導体装置の製造方法 |
DE112012007238B4 (de) | 2012-12-21 | 2021-11-11 | Denso Corporation | Halbleitervorrichtung |
WO2016051973A1 (ja) * | 2014-10-03 | 2016-04-07 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6402591B2 (ja) * | 2014-10-31 | 2018-10-10 | 富士電機株式会社 | 半導体装置 |
US10529839B2 (en) | 2015-05-15 | 2020-01-07 | Fuji Electric Co., Ltd. | Semiconductor device |
DE112016007515B4 (de) * | 2016-12-12 | 2024-07-18 | Mitsubishi Electric Corporation | Ansteuerverfahren und Ansteuerschaltung für Halbleitervorrichtung |
JP6610696B2 (ja) * | 2018-04-03 | 2019-11-27 | 富士電機株式会社 | トレンチmos型半導体装置 |
JP7205091B2 (ja) * | 2018-07-18 | 2023-01-17 | 富士電機株式会社 | 半導体装置 |
JP7006547B2 (ja) * | 2018-09-10 | 2022-01-24 | 三菱電機株式会社 | 半導体装置 |
JP7091204B2 (ja) | 2018-09-19 | 2022-06-27 | 株式会社東芝 | 半導体装置 |
JP7040423B2 (ja) * | 2018-11-28 | 2022-03-23 | 株式会社デンソー | 半導体装置 |
JP6804712B2 (ja) * | 2018-12-21 | 2020-12-23 | ローム株式会社 | 半導体装置 |
JP7458273B2 (ja) | 2020-03-03 | 2024-03-29 | 株式会社東芝 | 半導体装置の制御方法 |
US11374563B2 (en) * | 2020-03-03 | 2022-06-28 | Kabushiki Kaisha Toshiba | Method for controlling semiconductor device |
JP7471199B2 (ja) * | 2020-11-12 | 2024-04-19 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置、および炭化珪素半導体装置の製造方法 |
JP2022167435A (ja) * | 2021-04-23 | 2022-11-04 | 株式会社 日立パワーデバイス | 半導体装置及びそれを用いた電力変換装置、半導体装置の製造方法 |
JP2022175970A (ja) * | 2021-05-14 | 2022-11-25 | 株式会社デンソー | 半導体装置 |
JP2023115995A (ja) * | 2022-02-09 | 2023-08-22 | 株式会社 日立パワーデバイス | 半導体装置およびそれを用いた電力変換装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4356408A (en) * | 1980-08-01 | 1982-10-26 | Sundstrand Corporation | Drive circuit for parallel non-matched semiconductors |
JPH04280475A (ja) * | 1991-03-08 | 1992-10-06 | Fuji Electric Co Ltd | 半導体スイッチング装置 |
JP3163815B2 (ja) | 1992-02-03 | 2001-05-08 | 富士電機株式会社 | 半導体装置 |
US5459339A (en) | 1992-02-03 | 1995-10-17 | Fuji Electric Co., Ltd. | Double gate semiconductor device and control device thereof |
US5561393A (en) | 1992-02-03 | 1996-10-01 | Fuji Electric Co., Ltd. | Control device of semiconductor power device |
JPH07321304A (ja) * | 1994-05-20 | 1995-12-08 | Fuji Electric Co Ltd | 絶縁ゲートバイポーラトランジスタおよびその製造方法 |
US6043112A (en) * | 1996-07-25 | 2000-03-28 | International Rectifier Corp. | IGBT with reduced forward voltage drop and reduced switching loss |
JP2000040951A (ja) * | 1998-05-18 | 2000-02-08 | Toshiba Corp | 半導体素子、その駆動方法及び駆動装置 |
JP2000101076A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | 絶縁ゲート型半導体素子とその駆動方法 |
JP4007242B2 (ja) * | 2003-04-10 | 2007-11-14 | 富士電機ホールディングス株式会社 | 半導体装置 |
JP2004319624A (ja) * | 2003-04-14 | 2004-11-11 | Denso Corp | 半導体装置 |
JP2006278772A (ja) * | 2005-03-29 | 2006-10-12 | Toshiba Corp | 半導体装置 |
JP5122762B2 (ja) * | 2006-03-07 | 2013-01-16 | 株式会社東芝 | 電力用半導体素子、その製造方法及びその駆動方法 |
EP2117121A1 (en) * | 2008-05-06 | 2009-11-11 | Schleifring und Apparatebau GmbH | Semiconductor power switch |
US8536582B2 (en) * | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
JP5407390B2 (ja) * | 2009-02-09 | 2014-02-05 | トヨタ自動車株式会社 | 半導体装置 |
WO2011033733A1 (ja) | 2009-09-15 | 2011-03-24 | 三菱電機株式会社 | ゲート駆動回路 |
US9412854B2 (en) * | 2010-10-20 | 2016-08-09 | Infineon Technologies Austria Ag | IGBT module and a circuit |
-
2011
- 2011-05-11 JP JP2011106529A patent/JP5633468B2/ja active Active
-
2012
- 2012-02-10 US US13/370,858 patent/US8994147B2/en active Active
- 2012-03-07 DE DE102012203595.8A patent/DE102012203595B4/de active Active
- 2012-05-10 CN CN201210196246.1A patent/CN102779820B/zh active Active
-
2014
- 2014-03-21 KR KR1020140033329A patent/KR101496786B1/ko not_active IP Right Cessation
- 2014-05-22 KR KR1020140061526A patent/KR101504164B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20140053059A (ko) | 2014-05-07 |
US20120286288A1 (en) | 2012-11-15 |
JP2012238715A (ja) | 2012-12-06 |
KR20140079345A (ko) | 2014-06-26 |
KR101504164B1 (ko) | 2015-03-19 |
CN102779820A (zh) | 2012-11-14 |
KR101496786B1 (ko) | 2015-03-02 |
CN102779820B (zh) | 2015-08-19 |
DE102012203595B4 (de) | 2016-03-10 |
DE102012203595A1 (de) | 2012-11-15 |
US8994147B2 (en) | 2015-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5633468B2 (ja) | 半導体装置 | |
US10192977B2 (en) | Power semiconductor device | |
JP5869291B2 (ja) | 半導体装置 | |
Rahimo et al. | Novel enhanced-planar IGBT technology rated up to 6.5 kV for lower losses and higher SOA capability | |
JP6165271B2 (ja) | 電力用半導体装置 | |
JP6150908B2 (ja) | 電力用半導体装置 | |
US9449926B2 (en) | Semiconductor device | |
Werber et al. | 6.5 kV RCDC: For increased power density in IGBT-modules | |
JP2020053466A (ja) | 半導体装置 | |
KR20080098371A (ko) | 전하 균형 절연 게이트 양극성 트랜지스터 | |
JP2020047789A (ja) | 半導体装置 | |
CN103972282A (zh) | 反向阻断半导体器件和制造反向阻断半导体器件的方法 | |
KR101315871B1 (ko) | 반도체 장치 | |
JP2001308328A (ja) | 絶縁ゲート型半導体装置 | |
Andenna et al. | The next generation high voltage IGBT modules utilizing enhanced-trench ET-IGBTs and field charge extraction FCE-diodes | |
JP4904612B2 (ja) | Igbt | |
JP6739659B2 (ja) | 半導体装置 | |
KR20120127240A (ko) | 반도체장치 및 반도체 소자 | |
TW201403810A (zh) | 半導體裝置 | |
JP5832670B2 (ja) | 電力用半導体装置 | |
JP2008085359A (ja) | 電力用半導体装置 | |
Volke et al. | The new power semiconductor generation: 1200V IGBT4 and EmCon4 Diode | |
JP5871050B2 (ja) | 半導体装置 | |
JP7230303B2 (ja) | 半導体装置 | |
CN106409899A (zh) | 一种绝缘栅双极晶体管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130610 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140610 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140704 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140916 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140929 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5633468 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |