JP5619120B2 - 試料搭載装置 - Google Patents
試料搭載装置 Download PDFInfo
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- JP5619120B2 JP5619120B2 JP2012268936A JP2012268936A JP5619120B2 JP 5619120 B2 JP5619120 B2 JP 5619120B2 JP 2012268936 A JP2012268936 A JP 2012268936A JP 2012268936 A JP2012268936 A JP 2012268936A JP 5619120 B2 JP5619120 B2 JP 5619120B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B6/00—Cleaning by electrostatic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/9563—Inspecting patterns on the surface of objects and suppressing pattern images
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/94—Investigating contamination, e.g. dust
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/02—Details
- G01N3/04—Chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Sampling And Sample Adjustment (AREA)
Description
(第1の実施形態)
図1は、本発明の第1の実施形態に係る物体表面の欠陥検査装置の概略構成図である。図1において、欠陥検査装置は、大きくは、照明光学系10,倍率可変検出光学系20,搬送系30,信号処理系40及び欠陥検査装置全体を制御する全体制御部50によって構成される。
照明する。
ための閾値である。
(第2の実施形態)
次に、本発明の第2の実施形態について説明する。異物検査においてはウェハ1表面に透明な膜(例えば酸化膜)が形成された多層ウェハも検査する必要がある。この多層ウェハは、透明膜の上にパターンが形成される工程の繰り返しにより作られる。酸化膜等の透明膜が形成されたウェハ1上の異物検査において、酸化膜表面の異物のみを検出するニーズが高まっている。
(第3の実施形態)
次に、本発明の第3の実施形態について説明する。この第3の実施形態は、図11に示すように、搬送系30の上に異なる種類のウェハ1を搭載可能な構成として、ウェハチャック225−1,225−2,チャックホルダ220−1,220−2から成る2個の載置台を欠陥検査装置の搬送系30上に設置した例である。
(第4の実施形態)
次に、本発明の第4の実施形態について説明する。本発明の第4の実施形態は、欠陥検査装置に顕微鏡を付けた例である。この第4の実施形態の概略構成を図16に示す。なお、基本構成は、第1の実施形態と同様であるので、図示の簡略化のため、配置関係のみ図13に示す。
10 照明光学系
11 レーザ光源
20 検出光学系
25 光学フィルタ
30 搬送系
35 駆動回路
40 信号処理系
50 全体制御部
51 入出力手段
52 表示手段
53 記憶部
60 観察用光学系
70 瞳観察光学系
80 搬送ロボット
82 搬送アーム
155 裏面異物検査装置
180 異物付着防止手段
195 異物除去手段
300 端面検査装置
350 オリフラ検出光学系
1301 A/D変換器
1302 データ記憶部
1303 閾値算出処理部
1307 異物検出処理回路
1308 検査領域処理部
1309 特徴量算出回路(特徴量算出部)
1310 統合処理部
Claims (6)
- 試料を搭載すべき搭載台と、
前記試料に前記浮遊粒子が付着するのを防止する粒子付着防止手段と、有し
前記粒子付着防止手段は、前記搭載台周辺の浮遊粒子を吸着可能な誘電体部材を含み、
前記粒子付着防止手段は、前記搭載台に前記試料が搭載されていない状態の時に、前記誘電体部材をプラスの極性に帯電させ、イオン化エアーによってプラスの電荷を帯びた浮遊粒子を前記搭載台の下側における複数の方向から排気することを特徴とする試料搭載装置。 - 請求項1に記載の試料搭載装置において、
前記誘電体部材は、前記浮遊粒子とは逆の特性に帯電することを特徴とする試料搭載装置。 - 請求項2に記載の試料搭載装置において、
前記搭載台には、膜の形成された試料を搭載すべき第1の部分と、膜の形成されていない試料を搭載すべき第2の部分と、が形成されており、
前記粒子付着防止手段は、前記第1の部分、前記第2の部分それぞれに配置されていることを特徴とする試料搭載装置。 - 請求項3に記載の試料搭載装置において、
前記第1の部分、及び前記第2の部分のうち少なくとも1つを清掃する清掃手段を有することを特徴とする試料搭載装置。 - 請求項1に記載の試料搭載装置において、
前記搭載台には、膜の形成された試料を搭載すべき第1の部分と、膜の形成されていない試料を搭載すべき第2の部分と、が形成されており、
前記粒子付着防止手段は、前記第1の部分、前記第2の部分それぞれに配置されていることを特徴とする試料搭載装置。 - 請求項1に記載の試料搭載装置において、
前記搭載台の前記試料を搭載すべき部分を清掃する清掃手段を有することを特徴とする試料搭載装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012268936A JP5619120B2 (ja) | 2007-10-04 | 2012-12-10 | 試料搭載装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007261311 | 2007-10-04 | ||
JP2007261311 | 2007-10-04 | ||
JP2012268936A JP5619120B2 (ja) | 2007-10-04 | 2012-12-10 | 試料搭載装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008256945A Division JP5171524B2 (ja) | 2007-10-04 | 2008-10-02 | 物体表面の欠陥検査装置および方法 |
Publications (2)
Publication Number | Publication Date |
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JP2013057683A JP2013057683A (ja) | 2013-03-28 |
JP5619120B2 true JP5619120B2 (ja) | 2014-11-05 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2008256945A Expired - Fee Related JP5171524B2 (ja) | 2007-10-04 | 2008-10-02 | 物体表面の欠陥検査装置および方法 |
JP2012268936A Expired - Fee Related JP5619120B2 (ja) | 2007-10-04 | 2012-12-10 | 試料搭載装置 |
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JP2008256945A Expired - Fee Related JP5171524B2 (ja) | 2007-10-04 | 2008-10-02 | 物体表面の欠陥検査装置および方法 |
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US (2) | US8482728B2 (ja) |
JP (2) | JP5171524B2 (ja) |
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US20090056761A1 (en) * | 2007-08-28 | 2009-03-05 | Au Po Lam Benny | Apparatus for maintaining a clean bonding enviroment |
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2008
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- 2008-10-03 US US12/244,958 patent/US8482728B2/en not_active Expired - Fee Related
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JP5171524B2 (ja) | 2013-03-27 |
US8482728B2 (en) | 2013-07-09 |
US20130269126A1 (en) | 2013-10-17 |
JP2013057683A (ja) | 2013-03-28 |
US8760643B2 (en) | 2014-06-24 |
US20090103079A1 (en) | 2009-04-23 |
JP2009103694A (ja) | 2009-05-14 |
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