JP5606571B2 - 堆積反応炉のための装置および方法 - Google Patents
堆積反応炉のための装置および方法 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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Description
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
基板を収容し反応炉に備えられた反応室に、前駆体ソースからの前駆体蒸気を供給するための供給管路と、
前駆体ソースと反応室との間で前駆体蒸気が液相または固相に凝縮することを防止するために反応室加熱器からの熱を利用するように構成された構造と、
を備える装置が提供される。
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
基板を収容し反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を制御するように構成される、前駆体ソースに搭載された2つのパルス送出弁と、
1つのパルス送出弁から別のパルス送出弁に不活性ガスを供給するための、パルス送出弁間のバイパス管路と、
を備える装置が提供される。
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
基板を収容し反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を制御するように構成される、前駆体ソースに搭載されたパルス送出弁と、
を備え、
圧力を上昇させて反応室への前駆体蒸気と不活性ガスとの混合物が後に続いて流れ易くなるために、不活性ガスをパルス送出弁経由で前駆体ソースカートリッジに流し込むように構成された装置が提供される。
圧力上昇後、次の前駆体パルス期間の開始まで前駆体カートリッジを閉じるように構成され、
次の前駆体パルス期間の開始時にパルス送出弁経由で反応室に向かうルートを開くようにさらに構成される。
着脱可能な前駆体カートリッジと、
前駆体カートリッジを前記前駆体ソースに着脱しうるように構成される第1の取り付け具と、
前記前駆体ソースを堆積反応炉デバイスに着脱するための第2の取り付け具と、
を備える前駆体ソースが提供される。
封止部または弁の第1の側にある第3の取り付け具と、
封止部または弁の別の側にある第4の取り付け具と、
を備え、
上記第3および第4の取り付け具は、上記封止部または弁の取り外しおよびカートリッジの洗浄用に開くように構成される。
前駆体材料を備える前駆体ボートと、
内部に装填される上記前駆体ボートを受け入れる焼結カートリッジと、
を備える前駆体カートリッジが提供される。
堆積反応炉の前駆体ソースからの前駆体蒸気を供給管路に沿って、加熱された基板を収容する反応室に供給することと、
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させることと、
前駆体ソースと反応室との間で前駆体蒸気が液相または固相に凝縮することを防止するために反応室加熱器からの熱を使用することと、
を含む方法が提供される。
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させることと、
基板を収容し反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を、前駆体ソースに搭載された2つのパルス送出弁によって制御することと、
一方のパルス送出弁から別のパルス送出弁にバイパス管路経由で不活性ガスを供給することと、
を含む方法が提供される。
堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積することと、
基板を収容し反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を、前駆体ソースに搭載された1つのパルス送出弁によって制御することと、
圧力を上昇させて反応室への前駆体蒸気と不活性ガスとの混合物が後に続いて流れ易くなるために、不活性ガスをパルス送出弁経由で前駆体ソースカートリッジに流し込むことと、
を含む方法が提供される。
前駆体ソースを作動させることと、
ソース化学物質が装填された横型の前駆体ボートを前駆体ソースの焼結カートリッジで受けることと、
を含む方法が提供される。
換算係数:
100cm3=0.1dm3=l*10-4m3
1mbar=100Pa=1hPa
フィンランドのピコサン・オイ(Picosun Oy)社製のSUNALE(商標)R-150 ALD反応炉の内部で4"シリコン基板上にTa2O5薄膜を堆積させるための前駆体として五酸化タンタルTa(OEt)5と水とを用いた。Ta(OEt)5は、室温近くで強粘液であり、+120℃における蒸気圧が10hPaである。1hPa=100Pa=1mbarである。Ta(OEt)5の室温近くでの蒸気圧は無視できるほど小さいため、十分なソース蒸気圧を高ソース温度で得るために加熱式前駆体ソースを用いた。加熱式前駆体ソースのラジアル軸シールに押し付けられたガラス製カートリッジにTa(OEt)5を注射器と針とを用いて充填した。水は室温において液体であり、20℃における蒸気圧は23hPaである。水を室温25℃近くで蒸発させるために液体前駆体ソースを用いた。
ジエチル亜鉛(DEZ)を充填した1つのPicosolution(商標)前駆体ソースと、精製水を充填した1つのPicosolution(商標)前駆体ソースと、ビス(メチル-η5-シクロペンタジエニル)マグネシウム(CPMM)を充填した1つのPicohot(商標)ソースシステムとをALD反応炉に据え付けた。CPMMソースを+95℃に加熱した。これにより、蒸気圧が約10hPaになった。水源温度が好ましくは僅かに室温未満になるように、水源温度をペルチェ素子冷却器によって制御したが、他の実施形態においては、水の凝縮を防止するためにソース管路が十分に断熱されている限り、室温より高い温度を使用できる。この堆積例において、冷却された水源の温度は+18℃であった。
(1)堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
前記基板を収容し前記反応炉に備えられた反応室に、前記前駆体ソースからの前駆体蒸気を供給する供給管路と、
前記前駆体ソースと前記反応室との間で前駆体蒸気が液相または固相に凝縮することを防止するために反応室加熱器からの熱を利用するように構成された構造と、
を備える装置。
(2)前記前駆体ソースは、
前記反応炉からの熱を受けるように構成された突起を備える、
(1)に記載の前記装置。
(3)前記突起内の内側首部と前記突起の周囲の外側首部とを備え、前記内側首部と前記外側首部とはその間にギャップを形成する、
(2)に記載の前記装置。
(4)前記突起から周囲への熱エネルギーの損失を減らすように構成された熱伝導部を前記供給管路の周囲に備える、
(2)に記載の前記装置。
(5)着脱可能なソースカートリッジを受け入れるように構成されたソースフレームワークを備える、
(1)に記載の前記装置。
(6)前記ソースカートリッジを加熱するための加熱器を備える、
(5)に記載の前記装置。
(7)堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
前記基板を収容し前記反応炉に備えられた反応室への前記前駆体ソースからの前駆体蒸気の供給を制御するように構成される、前記前駆体ソースに搭載された2つのパルス送出弁と、
1つのパルス送出弁から別のパルス送出弁に不活性ガスを供給するための、前記パルス送出弁間のバイパス管路と、
を備える装置。
(8)流量制限器を前記バイパス管路に備える、(7)に記載の前記装置。
(9)堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積させるように構成された前駆体ソースと、
前記基板を収容し前記反応炉に備えられた反応室への前記前駆体ソースからの前駆体蒸気の供給を制御するように構成される、前記前駆体ソースに搭載されたパルス送出弁と、
を備える装置であって、前記装置は、
圧力を上昇させて前記反応室に向かう前駆体蒸気と不活性ガスとの混合物が後に続いて流れ易くなるために、不活性ガスを前記パルス送出弁経由で前駆体ソースカートリッジに流し込むように構成される、
装置。
(10)前記装置は、
前記圧力上昇後、次の前駆体パルス期間の開始まで前記前駆体カートリッジを閉じるように構成され、さらに、
前記次の前駆体パルス期間の開始時に前記パルス送出弁経由で前記反応室に向かうルートを開くように構成される、
(9)に記載の前記装置。
(11)前駆体ソースであって、
着脱可能な前駆体カートリッジと、
前記前駆体カートリッジを前記前駆体ソースに着脱するための第1の取り付け具と、
堆積反応炉デバイスへ前記前駆体ソース着脱するための第2の取り付け具と、
を備える前駆体ソース。
(12)前記第1の取り付け具に接続された粒子フィルタを備える、
(11)に記載の前記前駆体ソース。
(13)前駆体材料が前記前駆体カートリッジの内側から前記第1の取り付け具に流れるのを防ぐために、前記前駆体カートリッジを封止するように構成された封止部または弁を備える、(11)に記載の前記前駆体ソース。
(14)前記封止部または弁の第1の側にある第3の取り付け具と、
前記封止部または弁の別の側にある第4の取り付け具と、
を備え、
前記第3および第4の取り付け具は、前記封止部または弁を取り外すため、および前記カートリッジを洗浄するために開くように構成される、
(13)に記載の前記前駆体ソース。
(15)(11)に記載の前記前駆体ソースで使用される着脱可能な前駆体カートリッジ。
(16)前駆体材料を備える前駆体ボートと、
内部に装填される前記前駆体ボートを受け入れる焼結カートリッジと、
を備える前駆体カートリッジ。
(17)ソース化学物質が装填された前記前駆体ボートは、前記焼結カートリッジに装填口から入りうるように、横向きに配置される、(16)に記載の前記前駆体カートリッジ。
(18)前駆体蒸気を堆積反応炉の前駆体ソースから供給管路に沿って、加熱された基板を収容する反応室に供給することと、
前記堆積反応炉内の前記加熱された基板に連続する自己飽和表面反応によって材料を堆積させることと、
前記前駆体ソースと前記反応室との間で前記前駆体蒸気が液相または固相に凝結することを防止するために反応室加熱器からの熱を使用することと、
を含む方法。
(19)前記ソース内の突起内に前記反応炉からの熱を受け入れること
を含み、前記突起は前記供給管路を有し、前記受け入れた熱が前記供給管路を加熱する、
(18)に記載の前記方法。
(20)前記突起から周囲への熱エネルギーの損失を減らすために熱伝導部を前記供給管路の周囲に配置すること、
を含む、(19)に記載の前記方法。
(21)堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積することと、
前記基板を収容し前記反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を、前記前駆体ソースに搭載された2つのパルス送出弁によって制御することと、
1つのパルス送出弁から別のパルス送出弁にバイパス管路経由で不活性ガスを供給することと、
を含む方法。
(22)前記バイパス管路は流量制限器を備える、(21)に記載の前記方法。
(23)堆積反応炉内の加熱された基板上に連続する自己飽和表面反応によって材料を堆積することと、
前記基板を収容し前記反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を、前記前駆体ソースに搭載されたパルス送出弁によって制御することと、
圧力を上昇させて前記反応室に向かう前駆体蒸気と不活性ガスとの混合物が後に続いて流れ易くなるために、不活性ガスを前記パルス送出弁経由で前駆体ソースカートリッジに流し込むことと、
を含む方法。
(24)前記圧力上昇後、次の前駆体パルス期間の開始まで、前記前駆体カートリッジを閉じることと、
前記次の前駆体パルス期間の開始時に前記パルス送出弁経由で前記反応室に向かうルートを開くことと、
を含む、(23)に記載の前記方法。
(25)前駆体ソースを作動させることと、
ソース化学物質が装填された横型の前駆体ボートを前記前駆体ソースの焼結カートリッジで受けることと、
を含む方法。
Claims (12)
- 自己飽和表面反応の繰り返しによって、堆積反応炉内の加熱された基板上に材料を堆積させるように構成された前駆体ソースと、
前記基板を収容する前記反応炉に備えられた反応室への前記前駆体ソースからの前駆体蒸気の供給を制御するように構成される、前記前駆体ソースに搭載された第1のパルス送出弁と、
を備える装置であって、前記装置は、前記前駆体ソースに備えられる前駆体カートリッジに不活性ガスを流し込むように構成され、それによって前記前駆体カートリッジの圧力を上昇させ、前駆体蒸気と不活性ガスとの混合物の次の流れが前記反応室へと流れ易くなるようにする、
装置。 - 前記装置は、
前記圧力を上昇させた後、次の前駆体パルス期間の開始まで前記前駆体カートリッジを閉じるように構成され、さらに、
前記次の前駆体パルス期間の開始時に前記第1のパルス送出弁経由で前記反応室に向かうルートを開くように構成される、
請求項1に記載の装置。 - 前記前駆体ソースに搭載される第2のパルス送出弁を更に備え、
圧力を上昇させ、前駆体蒸気と不活性ガスとの混合物の次の流れが前記反応室へと流れ易くなるようにするために、不活性ガスを前記第2のパルス送出弁を経由して前記前駆体ソースカートリッジに流し込むように構成される、請求項1に記載の装置。 - 前記第2のパルス送出弁から前記第1のパルス送出弁へ不活性ガスを供給するために、前記第1のパルス送出弁と前記第2のパルス送出弁との間にバイパス管路をさらに備える、請求項3に記載の装置。
- 流量制限器を前記バイパス管路に備える、請求項4に記載の装置。
- 自己飽和表面反応の繰り返しによって、堆積反応炉内の加熱された基板上に材料を堆積することと、
前記基板を収容し前記反応炉に備えられた反応室への前駆体ソースからの前駆体蒸気の供給を、前記前駆体ソースに搭載された第1のパルス送出弁によって制御することと、
前記前駆体ソースに備えられる前駆体カートリッジに不活性ガスを流し込み、それによって前記前駆体カートリッジの圧力を上昇させ、前駆体蒸気と不活性ガスとの混合物の次の流れが前記反応室へと流れ易くなるようにすることと、
を含む方法。 - 前記圧力を上昇させた後、次の前駆体パルス期間の開始まで、前記前駆体カートリッジを閉じることと、
前記次の前駆体パルス期間の開始時に前記第1のパルス送出弁経由で前記反応室に向かうルートを開くことと、
を含む、請求項6に記載の方法。 - 圧力を上昇させ、前駆体蒸気と不活性ガスとの混合物の次の流れが前記反応室へと流れ易くなるようにするために、前記前駆体ソースに搭載される第2のパルス送出弁を経由して前記前駆体ソースカートリッジに不活性ガスを流し込むことをさらに含む、請求項6に記載の方法。
- バイパス管路を経由して、前記第2のパルス送出弁から前記第1のパルス送出弁へ不活性ガスを供給することをさらに含む、請求項8に記載の方法。
- 前記バイパス管路内の流量制限器を用いて、前記バイパス管路を経由して、前記第2のパルス送出弁から前記第1のパルス送出弁へ不活性ガスを供給することをさらに含む、請求項9に記載の方法。
- 前駆体パルス期間の開始前に、前駆体ソースに備えられる前駆体カートリッジの圧力を上昇させるべく、該前駆体カートリッジに不活性ガスを流し込むと共に、前記圧力の上昇後、前記前駆体パルス期間の開始まで、前記前駆体カートリッジを閉じるように構成される、原子層堆積システム。
- 原子層堆積法に従って物質を堆積させる方法であって、
前駆体パルス期間の開始前に、前駆体ソースに備えられる前駆体カートリッジの圧力を上昇させるべく、該前駆体カートリッジに不活性ガスを流し込むことと;
前記圧力の上昇後、前記前駆体パルス期間の開始まで、前記前駆体カートリッジを閉じることと;
を含む、方法。
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