JP5605005B2 - 炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 - Google Patents
炭化珪素半導体装置の製造方法および炭化珪素半導体装置の製造装置 Download PDFInfo
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Description
図1は、本発明の実施の形態1におけるSiC半導体装置の製造装置を示す模式図である。図1を参照して、本発明の一実施の形態におけるSiC半導体装置の製造装置10を説明する。
図11は、本発明の実施の形態2におけるSiC半導体装置の製造装置の模式図である。図11などを参照して、本実施の形態2におけるSiC半導体装置の製造装置を説明する。
Claims (11)
- 炭化珪素半導体装置を製造する方法であって、
炭化珪素半導体の第1の表面に第1の酸化膜を形成する工程と、
前記第1の酸化膜を除去する工程と、
前記炭化珪素半導体において前記第1の酸化膜が除去されることにより露出した第2の表面に、前記炭化珪素半導体装置を構成する第2の酸化膜を形成する工程とを備え、
前記第1の酸化膜を除去する工程と、前記第2の酸化膜を形成する工程との間において、前記炭化珪素半導体は大気が遮断された雰囲気内に配置され、
前記第1の酸化膜を除去する工程は、800℃以上炭化珪素の昇華温度以下で水素ガス、塩化水素ガス、フッ化硫黄ガスおよびフッ化炭素ガスからなる群から選択される少なくとも1つを含むガスを用いてエッチングする工程を含む、炭化珪素半導体装置の製造方法。 - 前記第1の酸化膜を形成する工程と、前記第1の酸化膜を除去する工程との間において、前記炭化珪素半導体は大気が遮断された雰囲気内に配置される、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第1の酸化膜を形成する工程では、前記炭化珪素半導体の前記第1の表面に形成されたダメージ層を酸化する、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記第1の酸化膜を除去する工程は、酸素を含まない雰囲気で1200℃以上炭化珪素の昇華温度以下で前記第1の酸化膜を熱分解する工程を含む、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第1の酸化膜を除去する工程と前記第2の酸化膜を形成する工程との間において、前記炭化珪素半導体の温度差を500℃以下に保持する、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記第2の酸化膜を形成する工程では、前記第1の酸化膜を除去する工程で用いる装置を用いて、前記第2の酸化膜を形成する、請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記第1の酸化膜を形成する工程と、前記第1の酸化膜を除去する工程と、前記第2の酸化膜を形成する工程とのそれぞれの間において、前記炭化珪素半導体の温度差を500℃以下に保持する、請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記第1の酸化膜を形成する工程で用いる装置と、前記第1の酸化膜を除去する工程で用いる装置と、前記第2の酸化膜を形成する工程で用いる装置とが同一である、請求項7に記載の炭化珪素半導体装置の製造方法。
- 炭化珪素半導体装置を製造する装置であって、
炭化珪素半導体の第1の表面に第1の酸化膜を形成するための第1の形成部と、
前記第1の酸化膜を除去するための除去部と、
前記除去部で、前記炭化珪素半導体において前記第1の酸化膜が除去されることにより露出した第2の表面に、前記炭化珪素半導体装置を構成する第2の酸化膜を形成するための第2の形成部と、
前記炭化珪素半導体を搬送可能に前記除去部と前記第2の形成部とを接続する第1の接続部とを備え、
前記第1の接続部における前記炭化珪素半導体を搬送させる領域は、大気の遮断が可能である、炭化珪素半導体装置の製造装置。 - 前記炭化珪素半導体を搬送可能に前記第1の形成部と前記除去部とを接続する第2の接続部をさらに備え、
前記第2の接続部における前記炭化珪素半導体を搬送させる領域は、大気の遮断が可能である、請求項9に記載の炭化珪素半導体装置の製造装置。 - 炭化珪素半導体装置を製造する装置であって、
炭化珪素半導体の第1の表面に第1の酸化膜を形成するための第1の形成部と、
前記第1の酸化膜を除去し、かつ前記炭化珪素半導体において前記第1の酸化膜が除去されることにより露出した第2の表面に、前記炭化珪素半導体装置を構成する第2の酸化膜を形成するための第2の形成部と、前記炭化珪素半導体を搬送可能に前記第1の形成部と前記第2の形成部とを接続する接続部とを備えた、炭化珪素半導体装置の製造装置。
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