JP5597921B2 - 半導体装置 - Google Patents
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- JP5597921B2 JP5597921B2 JP2008325409A JP2008325409A JP5597921B2 JP 5597921 B2 JP5597921 B2 JP 5597921B2 JP 2008325409 A JP2008325409 A JP 2008325409A JP 2008325409 A JP2008325409 A JP 2008325409A JP 5597921 B2 JP5597921 B2 JP 5597921B2
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明の第1の実施の形態に係る半導体装置は、図1に示すように、半導体領域3と、半導体領域3の主面上に設けられたソース電極(第1電極)40及びドレイン電極(第2電極)44と、半導体領域3の主面上に設けられたp型材料膜60aを介して設けられ、ソース電極40とドレイン電極44との間に配置されたノーマリオフ特性を示すゲート電極(第3電極)42と、半導体領域3の主面上に設けられ、ゲート電極42とドレイン電極44との間に配置された第4電極50とを備える。半導体領域3は、サファイア、シリコン、炭化シリコン等の支持基板10上に設けられた窒化アルミニウム(AlN)等のバッファ層20上に積層される。図1に示した第1の実施の形態に係る半導体装置は、HEMTである。
本発明の第2の実施の形態に係る半導体装置は、図16に示すように、図1に示した第1の実施の形態に係る半導体装置と比して、第4電極50とソース電極40とをショートさせている点が異なる。その他に関しては、実質的に同様であるので、重複する記載を省略する。
本発明の第3の実施の形態に係る半導体装置は、図1に示した第1の実施の形態に係る半導体装置と比して、第4電極50と半導体領域3の接触面が整流性を示す点が異なる。その他に関しては、実質的に同様であるので、重複する記載を省略する。
上記のように、本発明は実施の形態によって記載したが、この開示の一部をなす記述及び図面はこの発明を限定するものであると理解するべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかになるはずである。
10…支持基板
20…バッファ層
30…第1半導体層
31…2DEG層
32…第2半導体層
40…ソース電極
42…ゲート電極
44…ドレイン電極
50…第4電極
60a,70…p型材料膜
60b…絶縁膜
80…ソース端子
81…ゲート端子
82…ドレイン端子
Claims (2)
- 半導体領域と、
前記半導体領域の主面上に設けられたソース電極及びドレイン電極と、
前記半導体領域の主面上に設けられたp型材料膜を介して設けられ、前記ソース電極と前記ドレイン電極との間に配置されたノーマリオフ動作させる構造のゲート電極と、
前記半導体領域の主面の一部を除去することで形成されたリセス構造上で前記半導体領域の主面とショットキー接触して前記半導体領域の主面上に設けられ、前記ゲート電極と前記ドレイン電極との間に配置された第4電極
とを備え、前記第4電極と前記半導体領域の接触面が整流性を示し、オフ動作時の高電圧が印加されたときの破壊を防ぐように、前記第4電極に、ソース電圧を基準として0V〜数Vの電圧を印加することを特徴とする半導体装置。 - 前記ソース電極と前記第4電極は、電気的に接続されていることを特徴とする請求項1に記載の半導体装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008325409A JP5597921B2 (ja) | 2008-12-22 | 2008-12-22 | 半導体装置 |
US12/640,560 US8188515B2 (en) | 2008-12-22 | 2009-12-17 | Semiconductor device |
TW098143564A TWI400801B (zh) | 2008-12-22 | 2009-12-18 | 半導體元件 |
CN201110351212.0A CN102354705B (zh) | 2008-12-22 | 2009-12-21 | 半导体装置 |
CN2009110000223A CN101789445B (zh) | 2008-12-22 | 2009-12-21 | 半导体装置 |
US13/466,565 US8476677B2 (en) | 2008-12-22 | 2012-05-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008325409A JP5597921B2 (ja) | 2008-12-22 | 2008-12-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010147387A JP2010147387A (ja) | 2010-07-01 |
JP5597921B2 true JP5597921B2 (ja) | 2014-10-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008325409A Active JP5597921B2 (ja) | 2008-12-22 | 2008-12-22 | 半導体装置 |
Country Status (4)
Country | Link |
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US (2) | US8188515B2 (ja) |
JP (1) | JP5597921B2 (ja) |
CN (2) | CN101789445B (ja) |
TW (1) | TWI400801B (ja) |
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