JP5588669B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5588669B2 JP5588669B2 JP2009292454A JP2009292454A JP5588669B2 JP 5588669 B2 JP5588669 B2 JP 5588669B2 JP 2009292454 A JP2009292454 A JP 2009292454A JP 2009292454 A JP2009292454 A JP 2009292454A JP 5588669 B2 JP5588669 B2 JP 5588669B2
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- electrode layer
- layer
- thin film
- film transistor
- semiconductor
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- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Description
本実施の形態では、半導体装置の一例である薄膜トランジスタ及びその作製工程について説明する。具体的には薄膜トランジスタを有する表示装置の画素部の作製工程について説明する。
ここでは本発明の一形態として、2つのnチャネル型の薄膜トランジスタを用いてインバータ回路を構成する例を以下に説明する。
本実施の形態では、半導体装置の薄膜トランジスタについて説明する。具体的にはトップゲート型の薄膜トランジスタを有する表示装置の画素部について説明する。
本実施の形態では、本発明の半導体装置の一態様である表示装置として電子ペーパーの例を示す。
本実施の形態では、本発明の半導体装置の一態様である表示装置として、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について図8乃至図13を用いて以下に説明する。
本実施の形態では、本発明の半導体装置の一態様として、実施の形態1乃至3と同様に形成した薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、実施の形態1乃至3と同様に形成した薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の半導体装置の一態様として発光表示装置を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本発明の一態様が例示する表示装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。半導体装置の一例を図19、図20に示す。
本発明の一態様に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 ゲート絶縁膜
103 半導体膜
104 半導体膜
105 導電膜
109 層間絶縁膜
111 ゲート電極層
113 半導体層
114a 保護層
114b 保護層
114c 保護層
115a 電極層
115b 電極層
115c 電極層
118 配線
123 容量配線
124 コンタクトホール
126 コンタクトホール
128 画素電極層
131 レジストマスク
132 レジストマスク
151 薄膜トランジスタ
152 薄膜トランジスタ
153 薄膜トランジスタ
154 薄膜トランジスタ
155 薄膜トランジスタ
580 基板
581 薄膜トランジスタ
583 ゲート絶縁層
584 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 配線
5502 配線
5503 配線
5504 配線
5505 配線
5506 配線
5543 ノード
5544 ノード
5571 薄膜トランジスタ
5572 薄膜トランジスタ
5573 薄膜トランジスタ
5574 薄膜トランジスタ
5575 薄膜トランジスタ
5576 薄膜トランジスタ
5577 薄膜トランジスタ
5578 薄膜トランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 薄膜トランジスタ
5603b 薄膜トランジスタ
5603c 薄膜トランジスタ
5611 配線
5612 配線
5613 配線
5621 配線
5701 フリップフロップ
5703a タイミング
5703b タイミング
5703c タイミング
5711 配線
5712 配線
5713 配線
5714 配線
5715 配線
5716 配線
5717 配線
5721 信号
5803a タイミング
5803b タイミング
5803c タイミング
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 入力手段(操作キー)
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (4)
- ゲート電極層と、
前記ゲート電極層上のゲート絶縁膜と、
前記ゲート絶縁膜上の第1の電極層と、
前記ゲート絶縁膜上の第2の電極層と、
前記第1の電極層は、前記ゲート電極層と重畳する領域を有し、
前記第2の電極層は、前記ゲート電極層と重畳する領域を有し、
前記ゲート絶縁膜上の第1の酸化物半導体層と、
前記第1の電極層と、前記第1の酸化物半導体層との間の第2の半導体層と、
前記第2の電極層と、前記第1の酸化物半導体層との間の第3の半導体層と、を有し、
前記第2の半導体層は、前記第1の酸化物半導体層の導電率以下の導電率となる領域を有し、
前記第3の半導体層は、前記第1の酸化物半導体層の導電率以下の導電率となる領域を有し、
前記第1の酸化物半導体層は、前記第2の半導体層の側面部と接する領域を有し、
前記第1の酸化物半導体層は、前記第2の半導体層の上面部と接する領域を有し、
前記第1の酸化物半導体層は、前記第3の半導体層の側面部と接する領域を有し、
前記第1の酸化物半導体層は、前記第3の半導体層の上面部と接する領域を有することを特徴とする半導体装置。 - 請求項1において、
前記第1の酸化物半導体層は、インジウム、ガリウム、及び亜鉛を含み、
前記第2の半導体層は、インジウム、ガリウム、及び亜鉛を含み、
前記第3の半導体層は、インジウム、ガリウム、及び亜鉛を含むことを特徴とする半導体装置。 - 請求項1又は請求項2において、
前記第2の半導体層は、前記第1の酸化物半導体層と同じ条件で成膜されたものであり、
前記第3の半導体層は、前記第1の酸化物半導体層と同じ条件で成膜されたものであることを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一において、
前記第2の半導体層は、前記第1の電極層を成膜した後、大気にさらすことなく、前記第1の電極層上に形成され、
前記第3の半導体層は、前記第2の電極層を成膜した後、大気にさらすことなく、前記第2の電極層上に形成されたものであることを特徴とする半導体装置。
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US8338226B2 (en) * | 2009-04-02 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR101022652B1 (ko) * | 2009-04-02 | 2011-03-22 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 기판 제조방법 및 유기 발광 디스플레이 장치 제조방법 |
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JP5215158B2 (ja) * | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
KR100936874B1 (ko) * | 2007-12-18 | 2010-01-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법 |
JP5345349B2 (ja) * | 2008-07-24 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
TWI413260B (zh) | 2008-07-31 | 2013-10-21 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP4623179B2 (ja) * | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) * | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
EP2184783B1 (en) | 2008-11-07 | 2012-10-03 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and method for manufacturing the same |
TWI536577B (zh) | 2008-11-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
TWI606593B (zh) | 2008-11-28 | 2017-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
TWI585955B (zh) | 2008-11-28 | 2017-06-01 | 半導體能源研究所股份有限公司 | 光感測器及顯示裝置 |
EP2202802B1 (en) | 2008-12-24 | 2012-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
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- 2009-12-09 US US12/634,084 patent/US8383470B2/en active Active
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TWI476915B (zh) | 2015-03-11 |
JP2010171415A (ja) | 2010-08-05 |
JP6220412B2 (ja) | 2017-10-25 |
US8772784B2 (en) | 2014-07-08 |
JP2016149563A (ja) | 2016-08-18 |
JP2014239244A (ja) | 2014-12-18 |
US20130175523A1 (en) | 2013-07-11 |
US20100163866A1 (en) | 2010-07-01 |
JP5917623B2 (ja) | 2016-05-18 |
US8383470B2 (en) | 2013-02-26 |
KR101635842B1 (ko) | 2016-07-04 |
CN101794818B (zh) | 2014-04-23 |
KR20100075735A (ko) | 2010-07-05 |
CN101794818A (zh) | 2010-08-04 |
TW201036164A (en) | 2010-10-01 |
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