JP5583985B2 - 金属積層構造体 - Google Patents
金属積層構造体 Download PDFInfo
- Publication number
- JP5583985B2 JP5583985B2 JP2010034782A JP2010034782A JP5583985B2 JP 5583985 B2 JP5583985 B2 JP 5583985B2 JP 2010034782 A JP2010034782 A JP 2010034782A JP 2010034782 A JP2010034782 A JP 2010034782A JP 5583985 B2 JP5583985 B2 JP 5583985B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- metal
- layer
- laminated structure
- tungsten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 229910052751 metal Inorganic materials 0.000 title claims description 430
- 239000002184 metal Substances 0.000 title claims description 430
- 229910052721 tungsten Inorganic materials 0.000 claims description 131
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 129
- 239000010937 tungsten Substances 0.000 claims description 129
- 239000013078 crystal Substances 0.000 claims description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 50
- 239000010949 copper Substances 0.000 claims description 46
- 229910052802 copper Inorganic materials 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 39
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 357
- 239000004065 semiconductor Substances 0.000 description 56
- 150000003839 salts Chemical class 0.000 description 41
- 239000000758 substrate Substances 0.000 description 24
- 238000007747 plating Methods 0.000 description 22
- 239000000243 solution Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 238000009713 electroplating Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 238000005868 electrolysis reaction Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- OXVUUZZHYVQASQ-UHFFFAOYSA-N copper tungsten Chemical compound [W][Cu][W] OXVUUZZHYVQASQ-UHFFFAOYSA-N 0.000 description 6
- 238000007731 hot pressing Methods 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 6
- 239000011889 copper foil Substances 0.000 description 5
- 229910000365 copper sulfate Inorganic materials 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000011698 potassium fluoride Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PWWMYWXIBZFNHY-UHFFFAOYSA-N [Cu].[W].[Cu].[W].[Cu] Chemical compound [Cu].[W].[Cu].[W].[Cu] PWWMYWXIBZFNHY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- LIZDTVPMOYQCNV-UHFFFAOYSA-N [Cu].[Mo].[Cu].[Mo].[Cu] Chemical compound [Cu].[Mo].[Cu].[Mo].[Cu] LIZDTVPMOYQCNV-UHFFFAOYSA-N 0.000 description 1
- DATJIQVVBQRIOF-UHFFFAOYSA-N [Cu].[Ni].[W].[Cu].[W].[Cu].[Ni] Chemical compound [Cu].[Ni].[W].[Cu].[W].[Cu].[Ni] DATJIQVVBQRIOF-UHFFFAOYSA-N 0.000 description 1
- QWCJAJQSMRVJSA-UHFFFAOYSA-N [W].[Cu].[W].[Ni] Chemical compound [W].[Cu].[W].[Ni] QWCJAJQSMRVJSA-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
- C25D5/611—Smooth layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12833—Alternative to or next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/1284—W-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
図1に、本発明の金属積層構造体の一例である実施の形態1の金属積層構造体の模式的な断面図を示す。ここで、金属積層構造体は、タングステンを含む第1の金属層1と、銅を含む第2の金属層2と、タングステンを含む第3の金属層3と、の3層構造の積層構造体から構成されている。
まず、図8の模式的構成図に示すように、タングステンを含む溶融塩浴8を容器7に収容する。溶融塩浴8は、溶融塩浴8の電解によりタングステンを析出することができるものであれば特に限定されないが、たとえば、フッ化カリウム(KF)と酸化ホウ素(B2O3)と酸化タングステン(WO3)とをたとえば67:26:7のモル比で混合した混合物を溶融して作製した溶融塩浴などを用いることができる。
まず、図9の模式的構成図に示すように、たとえば銅箔などの第2の金属層2が容器7に収容された溶融塩浴8中を通過するように、第2の金属層2を第1のロール31aと第2のロール31bとの間に掛け渡す。
図11に、本発明の金属積層構造体の他の一例である実施の形態2の金属積層構造体の模式的な断面図を示す。ここで、実施の形態2の金属積層構造体は、実施の形態1の第1の金属層1の第2の金属層2側とは反対側の表面上に銅を含む第4の金属層4が設置されているとともに、第3の金属層3の第2の金属層2側とは反対側の表面上に銅を含む第5の金属層5が設置されている5層構造とされている点に特徴がある。
まず、実施の形態1と同様に、図8に示すように、容器7中にタングステンを含む溶融塩浴8を準備し、溶融塩浴8中のタングステンをたとえば銅箔などの第2の金属層2の両面にそれぞれ析出させる。このような溶融塩浴めっきにより第2の金属層2の両面にそれぞれタングステンを含む第1の金属層1およびタングステンを含む第3の金属層3を形成する。
まず、図13の模式的構成図に示すように、たとえば銅箔などの第2の金属層2が容器7に収容された溶融塩浴8および容器7に収容された電気めっき液9中をそれぞれ通過するように銅箔を第1のロール31aと第2のロール31bとの間に掛け渡す。
図14に、本発明の金属積層構造体の他の一例である実施の形態3の金属積層構造体の模式的な断面図を示す。実施の形態3の金属積層構造体は、実施の形態2の金属積層構造体の第1の金属層1と第4の金属層4との間、および第3の金属層3と第5の金属層5との間にそれぞれ、コバルト(Co)、ニッケル(Ni)、クロム(Cr)および金(Au)からなる群から選択された少なくとも1種を含む金属層からなる密着層40をさらに備えていることを特徴とする。
まず、上述のようにして、実施の形態1の金属積層構造体を製造し、実施の形態1の金属積層構造体の第1の金属層1および第3の金属層3をアルカリ溶液に浸漬させることによって、第1の金属層1の表面および第3の金属層3の表面の脱脂工程を行なう。
図15に、本発明の金属積層構造体の他の一例である実施の形態4の金属積層構造体の模式的な断面図を示す。実施の形態4の金属積層構造体は、実施の形態2の金属積層構造体の第4の金属層4および第5の金属層5の表面にそれぞれ、たとえばニッケルを含む金属層41を備えていることに特徴がある。
KF粉末およびWO3粉末をそれぞれ耐圧容器に封入した後に、耐圧容器を500℃に保持し、耐圧容器の内部を2日間以上真空引きすることによってKF粉末およびWO3粉末をそれぞれ乾燥させた。
タングステン板113と銅板114との間に1A/dm2の電流密度の電流を450分間流して溶融塩浴8の定電流電解を行なって銅板114の両面にそれぞれ25μmの厚さのタングステン層を形成したこと以外は実施例1と同様にして実施例2の金属積層構造体を作製した。
タングステン板113と銅板114との間に6A/dm2の電流密度の電流を75分間流して溶融塩浴8の定電流電解を行なって銅板114の両面にそれぞれ25μmの厚さのタングステン層を形成したこと以外は実施例1と同様にして実施例3の金属積層構造体を作製した。
実施例1と同様にしてタングステン−銅−タングステンの積層体を作製した後に、銅板114の両面にそれぞれ形成されたタングステン層の表面に電解めっきによりニッケル層を形成した。
厚さ600μmの銅板の両面にそれぞれ、厚さ25μmの市販の圧延タングステン箔を設置し、さらに、両側の圧延タングステン箔のそれぞれの表面上に厚さ200μmの銅板を設置した積層体を作製した。
厚さ25μmの市販の圧延タングステン箔に代えて厚さ25μmの市販の圧延モリブデン箔を用いたこと以外は比較例1と同様にして、銅−モリブデン−銅−モリブデン−銅の5層構造の積層体からなる比較例2の金属積層構造体を作製した。
Claims (7)
- タングステンを含む第1の金属層と、銅を含む第2の金属層と、タングステンを含む第3の金属層と、を備え、
前記第1の金属層は前記第2の金属層の第1の表面上に設置され、
前記第3の金属層は前記第2の金属層の前記第1の表面とは反対側の第2の表面上に設置されており、
前記第1の金属層に含まれる前記タングステンの結晶粒は前記第2の金属層の前記第1の表面に対して垂直方向に伸長する柱状結晶であり、
前記第3の金属層に含まれる前記タングステンの結晶粒が前記第2の金属層の前記第2の表面に対して垂直方向に伸長する柱状結晶である、金属積層構造体。 - 前記第1の金属層の厚さおよび前記第3の金属層の厚さがそれぞれ1μm以上200μm以下である、請求項1に記載の金属積層構造体。
- 前記金属積層構造体の縦断面における長さ500μmの領域内に存在する1μm以上のボイドの個数が2個以下である、請求項1または2に記載の金属積層構造体。
- 前記金属積層構造体は3層以上の奇数層である、請求項1から3のいずれか1項に記載の金属積層構造体。
- コバルト、ニッケル、クロムおよび金からなる群から選択された少なくとも1種を含む金属層をさらに備えた、請求項1から4のいずれか1項に記載の金属積層構造体。
- 前記金属積層構造体の最表面が銅を含む金属層である、請求項1から5のいずれか1項に記載の金属積層構造体。
- 前記金属積層構造体の最表面がニッケルを含む金属層であり、前記ニッケルを含む金属層の内側に銅を含む金属層が設けられている、請求項1から5のいずれか1項に記載の金属積層構造体。
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013098481A (ja) | 2011-11-04 | 2013-05-20 | Sumitomo Electric Device Innovations Inc | 半導体装置 |
TW201404287A (zh) * | 2012-07-09 | 2014-01-16 | Wah Hong Ind Corp | 散熱複合材料及其用途 |
CN105798544B (zh) * | 2014-12-31 | 2018-10-02 | 北京有色金属研究总院 | 一种钨-铜复合材料及其制备方法 |
WO2016111207A1 (ja) * | 2015-01-07 | 2016-07-14 | 新日鉄住金マテリアルズ株式会社 | 放熱基板 |
CN110699724B (zh) * | 2019-09-18 | 2021-02-12 | 湖南纳菲尔新材料科技股份有限公司 | 一种高耐蚀镍钨基合金多层镀层及其制备工艺 |
CN110983394B (zh) * | 2019-12-24 | 2021-02-19 | 湖南纳菲尔新材料科技股份有限公司 | 一种高强度紧固件高防腐电镀工艺 |
JP7444814B2 (ja) * | 2021-04-27 | 2024-03-06 | Ngkエレクトロデバイス株式会社 | パッケージ |
US20220372610A1 (en) * | 2021-05-21 | 2022-11-24 | Vactronix Scientific Llc | Engineered multi-dimensional metallurgical properties in pvd materials |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4025997A (en) * | 1975-12-23 | 1977-05-31 | International Telephone & Telegraph Corporation | Ceramic mounting and heat sink device |
US4371589A (en) | 1976-08-24 | 1983-02-01 | Warner London Inc. | Process for depositing protective coating and articles produced |
US4448854A (en) * | 1980-10-30 | 1984-05-15 | The United States Of America As Represented By The United States Department Of Energy | Coherent multilayer crystals and method of making |
KR900005847B1 (ko) * | 1988-05-31 | 1990-08-13 | 삼성전관 주식회사 | 텅스텐 전극의 표면처리 방법 |
JPH01305544A (ja) | 1988-06-03 | 1989-12-08 | Denki Kagaku Kogyo Kk | 半導体装置 |
JPH0280589A (ja) * | 1988-09-17 | 1990-03-20 | Nisshin Steel Co Ltd | 電気タングステンめっき浴およびその浴によるめっき方法 |
JPH02256262A (ja) | 1988-12-14 | 1990-10-17 | Sumitomo Metal Ind Ltd | 半導体素子用ヒートシンク |
JPH03218054A (ja) * | 1990-01-23 | 1991-09-25 | Mitsubishi Electric Corp | 発熱素子用基板 |
JPH04230063A (ja) | 1990-12-27 | 1992-08-19 | Aichi Steel Works Ltd | 多層ヒートシンク |
JP2860037B2 (ja) | 1993-03-15 | 1999-02-24 | 東京タングステン株式会社 | 半導体装置用放熱基板の製造方法 |
JPH07211822A (ja) | 1994-01-24 | 1995-08-11 | Kyocera Corp | 半導体素子収納用パッケージ |
US5525815A (en) * | 1994-10-03 | 1996-06-11 | General Electric Company | Diamond film structure with high thermal conductivity |
US5445106A (en) * | 1994-10-03 | 1995-08-29 | General Electric Company | Method for making high thermal conducting diamond |
JPH08222658A (ja) | 1995-02-17 | 1996-08-30 | Sumitomo Electric Ind Ltd | 半導体素子用パッケージ及びその製造方法 |
JPH1012767A (ja) | 1996-06-19 | 1998-01-16 | Tokyo Tungsten Co Ltd | 積層構造放熱基板及びその製造方法 |
JPH11284111A (ja) | 1998-03-30 | 1999-10-15 | Sumitomo Special Metals Co Ltd | ヒートシンク部材及びその製造方法、並びにヒートシンク部材を用いた半導体パッケージ |
JP2000124370A (ja) | 1998-10-15 | 2000-04-28 | Sumitomo Metal Electronics Devices Inc | 半導体装置用パッケージ |
JP3505704B2 (ja) | 1999-05-10 | 2004-03-15 | 株式会社アライドマテリアル | 放熱基板およびその製造方法 |
US6352014B1 (en) | 1999-12-15 | 2002-03-05 | International Business Machines Corporation | Method for making punches using multi-layer ceramic technology |
US6965199B2 (en) | 2001-03-27 | 2005-11-15 | The University Of North Carolina At Chapel Hill | Coated electrode with enhanced electron emission and ignition characteristics |
JP2003037204A (ja) | 2001-07-25 | 2003-02-07 | Kyocera Corp | 半導体素子収納用パッケージ |
US20040140474A1 (en) | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
JP2004088083A (ja) | 2002-06-25 | 2004-03-18 | Matsushita Electric Ind Co Ltd | 半導体発光素子、その製造方法及びその実装方法 |
TW200500199A (en) * | 2003-02-12 | 2005-01-01 | Furukawa Circuit Foil | Copper foil for fine patterned printed circuits and method of production of same |
JP2004249589A (ja) | 2003-02-20 | 2004-09-09 | Toshiba Corp | 銅−モリブデン複合材料およびそれを用いたヒートシンク |
KR100743958B1 (ko) | 2003-08-13 | 2007-07-30 | 올-크래드 메탈크래프터즈 엘엘씨 | 균일한 열전도 특성을 갖는 접합된 금속 부재 및 그제조방법 |
JP4104517B2 (ja) * | 2003-09-26 | 2008-06-18 | 本田技研工業株式会社 | 摺動部材 |
JP2005105354A (ja) * | 2003-09-30 | 2005-04-21 | Honda Motor Co Ltd | 摺動部材 |
US7279407B2 (en) * | 2004-09-02 | 2007-10-09 | Micron Technology, Inc. | Selective nickel plating of aluminum, copper, and tungsten structures |
JP2006100640A (ja) | 2004-09-30 | 2006-04-13 | Hitachi Metals Ltd | セラミックス回路基板及びこれを用いたパワー半導体モジュール |
JP4785141B2 (ja) | 2004-10-01 | 2011-10-05 | 住友電気工業株式会社 | 溶融塩浴、この溶融塩浴を用いて得られた析出物、金属製品の製造方法および金属製品 |
JP5123462B2 (ja) * | 2004-10-27 | 2013-01-23 | 住友電気工業株式会社 | 膜形成用配向基板および超電導線材ならびに膜形成用配向基板の製造方法 |
KR101204588B1 (ko) * | 2004-11-24 | 2012-11-27 | 스미토모덴키고교가부시키가이샤 | 용융염욕, 석출물 및 금속석출물의 제조방법 |
US8318519B2 (en) | 2005-01-11 | 2012-11-27 | SemiLEDs Optoelectronics Co., Ltd. | Method for handling a semiconductor wafer assembly |
US9390999B2 (en) | 2005-03-23 | 2016-07-12 | Noriaki Kawamura | Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure |
TWI254419B (en) | 2005-04-08 | 2006-05-01 | Univ Nat Chiao Tung | Compound semiconductor device having copper metallization |
JP4711724B2 (ja) | 2005-04-19 | 2011-06-29 | 学校法人同志社 | 溶融塩めっき用電解浴及び該電解浴を用いた溶融塩めっき方法 |
JP3862737B1 (ja) | 2005-10-18 | 2006-12-27 | 栄樹 津島 | クラッド材およびその製造方法、クラッド材の成型方法、クラッド材を用いた放熱基板 |
US7695808B2 (en) | 2005-11-07 | 2010-04-13 | 3M Innovative Properties Company | Thermal transfer coating |
JP4867388B2 (ja) | 2006-02-21 | 2012-02-01 | トヨタ自動車株式会社 | 熱電発電装置 |
JP2007327081A (ja) | 2006-06-06 | 2007-12-20 | Toyota Central Res & Dev Lab Inc | 接着方法、半導体装置の製造方法、及び半導体装置 |
EP2056344B1 (en) * | 2006-07-28 | 2015-01-07 | Kyocera Corporation | Electronic component storing package and electronic device |
JP4930026B2 (ja) * | 2006-12-13 | 2012-05-09 | 富士ゼロックス株式会社 | 積層体、無端状ベルト、定着装置及び画像形成装置 |
JP2008214728A (ja) * | 2007-03-07 | 2008-09-18 | Sumitomo Electric Ind Ltd | セラミックス膜の製造方法 |
US20080298024A1 (en) * | 2007-05-31 | 2008-12-04 | A.L.M.T. Corp. | Heat spreader and method for manufacturing the same, and semiconductor device |
JP4883534B2 (ja) | 2008-03-26 | 2012-02-22 | 住友電気工業株式会社 | 溶融塩浴、溶融塩浴の製造方法およびタングステン析出物 |
JP5568883B2 (ja) * | 2009-03-27 | 2014-08-13 | 住友電気工業株式会社 | 溶融塩浴および溶融塩浴の製造方法 |
JP2011011366A (ja) | 2009-06-30 | 2011-01-20 | Sumitomo Electric Ind Ltd | 金属積層構造体の製造方法 |
JP5481634B2 (ja) * | 2009-10-14 | 2014-04-23 | 多摩川精機株式会社 | 慣性センサを収容するモールド構造およびそれを用いたセンサシステム |
JP5580772B2 (ja) | 2011-04-07 | 2014-08-27 | 住友電気工業株式会社 | 金属積層構造体の製造方法 |
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WO2011102059A1 (ja) | 2011-08-25 |
US8993121B2 (en) | 2015-03-31 |
TW201136757A (en) | 2011-11-01 |
KR101716924B1 (ko) | 2017-03-15 |
TWI496681B (zh) | 2015-08-21 |
EP2537963A1 (en) | 2012-12-26 |
US20120315502A1 (en) | 2012-12-13 |
EP2537963A4 (en) | 2016-05-04 |
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