JP6476114B2 - 調整可能な及び高いゲート・ソース定格電圧を備えるiii‐窒化物エンハンスメントモードトランジスタ - Google Patents
調整可能な及び高いゲート・ソース定格電圧を備えるiii‐窒化物エンハンスメントモードトランジスタ Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 claims description 171
- 239000004065 semiconductor Substances 0.000 claims description 78
- 230000004888 barrier function Effects 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 27
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000002955 isolation Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000005641 tunneling Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Junction Field-Effect Transistors (AREA)
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Description
Claims (20)
- 半導体デバイスであって、
エンハンスメントモードGaN FETと、
デプリーションモードGaN FETと、
を含み、
前記エンハンスメントモードGaN FETのソースノードが、前記半導体デバイスのソース端子に電気的に結合され、
前記エンハンスメントモードGaN FETのドレインノードが、前記半導体デバイスのドレイン端子に電気的に結合され、
前記エンハンスメントモードGaN FETのゲートノードが、前記デプリーションモードGaN FETのソースノードに電気的に結合され、
前記デプリーションモードGaN FETのゲートノードが、前記エンハンスメントモードGaN FETの前記ソースノードに電気的に結合され、
前記デプリーションモードGaN FETのドレインノードが、前記半導体デバイスのゲート端子に電気的に結合され、
最大所望ゲート・ソースバイアスよりも高いゲートバイアスが前記ゲート端子に印加されると前記デプリーションモードGaN FETがピンチ・オフモードで動作するように構成される、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記エンハンスメントモードGaN FETのゲートが、ガリウム窒化物の低欠陥層上の障壁層上のp型III−N半導体材料の層を含む、半導体デバイス。 - 請求項2に記載のデバイスであって、
前記エンハンスメントモードGaN FETのゲートが、前記p型III−N半導体材料の層上の金属の層を含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記エンハンスメントモードGaN FETのゲートが絶縁されたゲートである、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記エンハンスメントモードGaN FETが、ガリウム窒化物の低欠陥層上の障壁層における窪みを含み、前記エンハンスメントモードGaN FETのゲートが前記窪みに配置される、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記エンハンスメントモードGaN FETが、ガリウム窒化物の低欠陥層上の障壁層上のガリウム窒化物のキャップ層を含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記デプリーションモードGaN FETが、ガリウム窒化物の低欠陥層と前記低欠陥層上の障壁層とを含み、前記障壁層が、AlxGa1−xNとInxAlyGa1−x−yNとから成るグループから選択される半導体材料を含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記デプリーションモードGaN FETのゲートが、金属のデプリーションモードゲートを含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記デプリーションモードGaN FETのゲートが、III−N半導体材料のデプリーションモードゲートを含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記デプリーションモードGaN FETと前記エンハンスメントモードGaN FETとが、同じ基板でIII−N半導体材料の同じ層構造上に形成される、半導体デバイス。 - 半導体デバイスを形成するプロセスであって、
エンハンスメントモードGaN FETを形成する工程であって、
ガリウム窒化物を含む第1の低欠陥層を第1の基板の上に形成することと、
前記第1の低欠陥層に二次元電子ガスが生成されるように、アルミニウムガリウム窒化物を含む第1の障壁層を前記低欠陥層の上に形成することであって、前記エンハンスメントモードGaN FETの導電性チャネルを提供する、前記第1の障壁層を形成することと、
前記第1の障壁層の上にエンハンスメントモードゲートを形成することと、
を含むプロセスにより、エンハンスメントモードGaN FETを形成する、前記形成する工程と、
デプリーションモードGaN FETを形成する工程であって、
ガリウム窒化物を含む第2の低欠陥層を第2の基板の上に形成することと、
前記第2の低欠陥層に二次元電子ガスが生成されるように、アルミニウムガリウム窒化物を含む第2の障壁層を前記第2の低欠陥層の上に形成することであって、前記デプリーションモードGaN FETの導電性チャネルを提供する、前記第2の障壁層を形成することと、
前記第2の障壁層の上にデプリーションモードゲートを形成することと、
を含むプロセスにより、デプリーションモードGaN FETを形成する、前記形成する工程と、
前記エンハンスメントモードGaN FETのソースノードを前記半導体デバイスのソース端子に電気的に結合する工程と、
前記エンハンスメントモードGaN FETのドレインノードを前記半導体デバイスのドレイン端子に電気的に結合する工程と、
前記エンハンスメントモードGaN FETの前記エンハンスメントモードゲートを前記デプリーションモードGaN FETのソースノードに電気的に結合する工程と、
前記デプリーションモードGaN FETの前記デプリーションモードゲートを前記エンハンスメントモードGaN FETの前記ソースノードに電気的に結合する工程と、
前記デプリーションモードGaN FETのドレインノードを前記半導体デバイスのゲート端子に電気的に結合する工程と、
を含み、
最大所望ゲート・ソースバイアスよりも高いゲートバイアスが前記ゲート端子に印加されると前記デプリーションモードGaN FETがピンチ・オフモードで動作するように構成される、プロセス。 - 請求項11に記載のプロセスであって、
前記エンハンスメントモードGaN FETを形成する工程が、ガリウム窒化物の低欠陥層上の障壁層上にp型III‐N半導体材料の層を形成することにより前記エンハンスメントモードGaN FETのゲートを形成することを含む、プロセス。 - 請求項12に記載のプロセスであって、
前記エンハンスメントモードGaN FETのゲートの前記p型III−N半導体材料の層上に金属の層を形成することを更に含む、プロセス。 - 請求項11に記載のプロセスであって、
前記エンハンスメントモードGaN FETを形成する工程が、ガリウム窒化物の低欠陥層上の障壁層の上のゲート誘電体層の上に金属ゲートを形成することにより前記エンハンスメントモードGaN FETの絶縁されたゲートを形成することを含む、プロセス。 - 請求項11に記載のプロセスであって、
前記エンハンスメントモードGaN FETを形成する工程が、ガリウム窒化物の低欠陥層上の障壁層に窪みを形成することと、前記窪みに前記エンハンスメントモードGaN FETのゲートを形成することとを含む、プロセス。 - 請求項11に記載のプロセスであって、
前記エンハンスメントモードGaN FETを形成する工程が、ガリウム窒化物の低欠陥層上の障壁層上にガリウム窒化物のキャップ層を形成することを含む、プロセス。 - 請求項11に記載のプロセスであって、
前記デプリーションモードGaN FETを形成する工程が、ガリウム窒化物の低欠陥層と、前記低欠陥層上の障壁層とを形成することを含み、前記障壁層が、AlxGa1−xNとInxAlyGa1−x−yNとから成るグループから選択される半導体材料を含む、プロセス。 - 請求項11に記載のプロセスであって、
前記デプリーションモードゲートを形成する工程が、金属のデプリーションモードゲートを形成することを含む、プロセス。 - 請求項11に記載のプロセスであって、
前記デプリーションモードゲートを形成する工程が、III−N半導体材料のデプリーションモードゲートを形成することを含む、プロセス。 - 請求項11に記載のプロセスであって、
前記デプリーションモードGaN FETと前記エンハンスメントモードGaN FETとが、同じ基板でIII−N半導体材料の同じ層構造上に形成される、プロセス。
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US13/886,410 US8933461B2 (en) | 2012-08-09 | 2013-05-03 | III-nitride enhancement mode transistors with tunable and high gate-source voltage rating |
US13/886,410 | 2013-05-03 | ||
PCT/US2013/054168 WO2014026018A1 (en) | 2012-08-09 | 2013-08-08 | Iii-nitride enhancement mode transistors with tunable and high gate-source voltage rating |
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