JP5575866B2 - 電気的に作動するスイッチ - Google Patents
電気的に作動するスイッチ Download PDFInfo
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- JP5575866B2 JP5575866B2 JP2012270961A JP2012270961A JP5575866B2 JP 5575866 B2 JP5575866 B2 JP 5575866B2 JP 2012270961 A JP2012270961 A JP 2012270961A JP 2012270961 A JP2012270961 A JP 2012270961A JP 5575866 B2 JP5575866 B2 JP 5575866B2
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- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 239000001963 growth medium Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 230000007935 neutral effect Effects 0.000 description 1
- IYVLHQRADFNKAU-UHFFFAOYSA-N oxygen(2-);titanium(4+);hydrate Chemical compound O.[O-2].[O-2].[Ti+4] IYVLHQRADFNKAU-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/53—Structure wherein the resistive material being in a transistor, e.g. gate
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Description
本発明は、米国国防総省国防高等研究事業局によって与えられた契約番号HR0011−0503−0001の下で政府の支援を受けて行なわれた。政府は本発明において特定の権利を有する。
図面は、例示のためだけに、本発明の実施形態を示す。当業者は、以下の説明から、本明細書において説明される本発明の原理から逸脱することなく、本明細書において例示される構造及び方法の他の実施形態を利用することができることを容易に理解されよう。
本明細書において用いられる場合、「接合部」に適用されるような用語「自己整合(self-aligned)」は、接合部を形成することがワイヤを交差させるという行為であるので、ワイヤのうちの一方がコーティングされ得るか、又は機能化され得る2本のワイヤが互いに交差する場合にはいつでも、その接合部がスイッチを形成し、及び/又は2本のワイヤ間に他の電気的接続を形成することを意味する。
図1Aは、2つの異なる交差ワイヤ102、104を接続する固体スイッチ100の一例を示す。スイッチ接合部106を用いて、2つの異なるワイヤ102、104を接続することができる。スイッチ接合部106は、少なくとも1つの材料106a、具体的には切替可能な分子(即ち、2つの異なる状態においてエネルギー的に相対的に安定している切替可能なセグメント又は部分を有する分子)を含むことができる。そのような分子の例は、現在、分子電子(モレトロニック(moletronic))スイッチングの分野においてよく知られている。一方又は両方のワイヤ102、104は、金属又は半導体とすることができる。多くの場合、いずれのワイヤも金属、具体的にはプラチナであり、薄いチタン層106bが、分子106a上に形成され、その後、そのチタン層上にプラチナの上側ワイヤ104が形成される。
本明細書の教示によれば、マイクロスケール又はナノスケールにおいて構築され得ると共に、多種多様な電子回路内の構成要素として使用され得る改善された電気的に作動するスイッチが提供される。そのスイッチは、さらに大きなクロスバーアレイ内の2本のワイヤとすることができる、図1A及び図1Bに示される一対の交差するワイヤのような、2本の異なるワイヤを接続するために使用され得るか、又は図2に示されるように、ワイヤに沿って電流が流れるのを許可するか又は阻止するために、1本のワイヤ内で使用され得る。
V(t)=I(t)[RS+RV(t)] 1.
RV(t)=ρw(t)/A 2.
ただし、空孔のドリフト最前部の背後にある材料は本質的に0の抵抗を有するものと見なされ、ρはドープされない二酸化チタンの抵抗率であり、Aは電流が流れる方向に対して垂直なナノ結晶の面積である。スイッチがOFFであり、ONに切り替えるためにバイアスがかけられる初期条件の場合、ドープされない二酸化チタンの幅の変化率は、ちょうど、ドープされない幅にわたって印加される電界内の空孔ドリフト速度である。
本明細書において開示されるスイッチは、広範な材料堆積及び処理技術を用いて製造され得る。最初に、初期ワイヤ102(金属又は半導体)が、フォトリソグラフィ又は電子ビームリソグラフィのような従来の技術を用いて、又はインプリントリソグラフィのようなさらに高度な技術を用いて形成される。これは、図1に示される交差ワイヤ対100の下側ワイヤ102とすることができるか、又は、例えば、図2に示されるような回路の平面に対して垂直な接続200を形成するためにバイア内に形成されているワイヤ102とすることができる。
ドーパント種が、スイッチの活性領域の中にドリフトすることによって注入され、その活性領域から放出されることを可能にするための特性の所望の組み合わせを示す、即ち電子的に半導体又は絶縁体であり、且つ「弱い」イオン伝導体である広範の材料が存在する。一般に、優れたスイッチング材料は、化合物半導体酸化物及び窒化物であるが、半導体硫化物、リン化物、塩化物、セレン化物、ヒ化物及び臭化物もスイッチングを提供する。一般に、半導体を電気的にドーピングすることができる種に関して弱いイオン伝導体でもある任意の半導体材料が、本発明及びその種々の実施形態を実施するのに有効であろう。言い換えると、考えられるスイッチ化合物は、結合への著しいイオン寄与を有する半導体化合物である。良好な組み合わせは、ドープされず、化学量論的である一次活性材料、それゆえ良好な絶縁体と、バイアス電圧が印加されると、一次材料の中にドリフトすることができる高い濃度の陰イオン空孔又は他のドーパント種を含む同じ、又は関連する母材の二次供給源/シンクとの組み合わせである。その概念は、供給源/シンクシステム310が高い導電性であり、それゆえ、ドーピング濃度を変更しても、この二次材料の導電率に及ぼす影響は比較的小さいが、一次材料308は本質的に真性であるので、わずかな量のドーパントであっても、この材料の導電率に非常に大きな影響を及ぼすことになるというものである。
上記で検討されたように、スイッチのコンダクタンスは、広い範囲にわたって変更することができる。以下に説明される実施形態は、本明細書において説明されるスイッチが実際には連続であり、例えば、OFF状態からON状態に、そしてその逆に、多少は急であるものの、スイッチの抵抗が連続して変化するという事実に関する。これが、スイッチ等価回路の概略図(図6B、図7B、図8B)に明示されており、その等価回路は、固定抵抗器と直列に接続される可変抵抗器を示す。
Claims (9)
- 構成可能なON/OFF極性を有する電気的に作動するスイッチであって、
第1の電極と、
第2の電極と、
前記第1の電極と前記第2の電極との間に配置される活性領域とを備え、その活性領域は、
それぞれが前記スイッチを通過する電子の流れを制御するためのイオンドーパントを輸送し、且つ受け入れるための少なくとも1つの材料を含む第1の一次活性領域および第2の一次活性領域と、
前記第1の一次活性領域と前記第2の一次活性領域との間に配置され、前記第1及び第2の一次活性領域のためのイオンドーパントのソース/シンクを提供するための少なくとも1つの材料を含む二次活性領域とを備え、
前記イオンドーパントが前記二次活性領域から前記第1の電極又は前記第2の電極のいずれかに向かって最初にドリフトするようにすることによって、前記スイッチの最初のON/OFF極性が設定され得る、スイッチ。 - 前記第1の電極と前記第1の一次活性領域が非共有結合される、請求項1に記載のスイッチ。
- 3つの状態が存在し、即ち、
その最初の状態において、両方の電極に隣接するドーピングされていない半導体が存在し、直列に接続され且つ互いに向かい合っている2つのショットキー障壁をもたらし、それによりデバイスの両方向における電流の流れを有効に阻止し、
イオンドーパントが前記第1の電極の近くの領域へ注入される第2の状態に切り替えられる場合に、前記第1の電極に隣接する前記ショットキー障壁が低下し、反対の方向に比べて一方の方向にいっそう容易に電流が流れる結果になり、
イオンドーパントが前記第2の電極の近くの領域へ注入される第3の状態に切り替えられる場合に、前記第2の電極に隣接する前記ショットキー障壁が低下し、容易に流れる電流の方向の逆転という結果になる、請求項1に記載のスイッチ。 - 前記二次活性領域の前記イオンドーパントが、前記第1及び第2の一次活性領域の少なくとも1つのための前記少なくとも1つの材料に対する電気的なイオンドーパントとしての役割を果たすものから選択され、それによって、前記第1及び第2の一次活性領域の少なくとも1つの導電率が、相対的に低い導電率から相対的に高い導電率に変更される、請求項1に記載のスイッチ。
- 前記二次活性領域の前記少なくとも1つの材料により提供された前記イオンドーパントが、イオン化格子間または置換型不純物原子、陽イオン供与体種、陰イオン空孔、及び陰イオン受容体種からなるグループから選択される、請求項4に記載のスイッチ。
- 前記イオンドーパントが、水素、アルカリ及びアルカリ土類陽イオン、遷移金属陽イオン、希土類陽イオン、酸素陰イオン又は空孔、カルコゲニド陰イオン又は空孔、窒素陰イオン又は空孔、プニクチド陰イオン又は空孔、あるいはハロゲン化物陰イオン又は空孔から成るグループから選択される、請求項4に記載のスイッチ。
- 前記第1及び第2の一次活性領域の少なくとも1つのための前記少なくとも1つの材料及び前記二次活性領域のための少なくとも1つの材料が、遷移金属、希土類金属及びアルカリ土類金属の酸化物、硫化物、セレン化物、窒化物、リン化物、ヒ化物、塩化物及び臭化物、それらの合金、並びに少なくとも1つの陰性元素と化合する少なくとも2つの異なる金属原子が存在する、混合化合物から成るグループから選択される、請求項1に記載のスイッチ。
- 前記第1及び第2の一次活性領域の少なくとも1つのための前記少なくとも1つの材料及び前記二次活性領域のための少なくとも1つの材料が、チタン酸塩、ジルコン酸塩、ハフニウム酸塩、対を成すか又は3つ同時に存在するこれら3つの酸化物の合金、及びABO3化合物からなるグループから選択され、ここでAは少なくとも1つの二価元素であり、BはTi、Zr及びHfの少なくとも1つである、請求項7に記載のスイッチ。
- 前記第1及び第2の一次活性領域の少なくとも1つのための前記少なくとも1つの材料及び前記二次活性領域のための少なくとも1つの材料が、以下のリストから選択される、即ち
TiO2/TiO2−x
ZrO2/ZrO2−x
HfO2/HfO2−x
SrTiO3/SrTiO3−x
GaN/GaN1−x
CuCl/CuCl1−x
GaN/GaN:S
請求項7に記載のスイッチ。
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KR20090091692A (ko) | 2009-08-28 |
JP2013118386A (ja) | 2013-06-13 |
KR101434242B1 (ko) | 2014-08-27 |
DE112007002328T5 (de) | 2009-07-23 |
US20170317277A1 (en) | 2017-11-02 |
KR101390430B1 (ko) | 2014-04-29 |
KR20140003652A (ko) | 2014-01-09 |
US20080079029A1 (en) | 2008-04-03 |
US7763880B2 (en) | 2010-07-27 |
JP2010506403A (ja) | 2010-02-25 |
US9735355B2 (en) | 2017-08-15 |
US20080090337A1 (en) | 2008-04-17 |
DE112007002328B4 (de) | 2011-12-01 |
US8766224B2 (en) | 2014-07-01 |
US20140203864A1 (en) | 2014-07-24 |
US10374155B2 (en) | 2019-08-06 |
CN101548403B (zh) | 2013-02-27 |
US11283012B2 (en) | 2022-03-22 |
WO2008108822A3 (en) | 2008-12-31 |
US20190363251A1 (en) | 2019-11-28 |
WO2008108822A2 (en) | 2008-09-12 |
CN101548403A (zh) | 2009-09-30 |
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