JP5574343B2 - 誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 - Google Patents
誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 Download PDFInfo
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- 239000000203 mixture Substances 0.000 title claims description 59
- 239000000919 ceramic Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 title claims description 20
- -1 DIELECTRIC Substances 0.000 title description 2
- 238000010304 firing Methods 0.000 claims description 28
- 238000001354 calcination Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 11
- 239000000843 powder Substances 0.000 description 20
- 239000003989 dielectric material Substances 0.000 description 17
- 238000005245 sintering Methods 0.000 description 15
- 238000002441 X-ray diffraction Methods 0.000 description 13
- 238000002156 mixing Methods 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
- C04B35/111—Fine ceramics
- C04B35/117—Composites
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
<誘電体の作製>
(混合工程)
市販のAl2O3粉末(純度99.99質量%)とTeO2粉末(純度99.9質量%)とを、モル比で1:1となるように秤量した。秤量したAl2O3粉末とTeO2粉末とエタノールとを、ボールミルを用いて24時間湿式混合した。その後、乾燥によりエタノールを除去して、Al2O3粉末とTeO2粉末とを含む混合物を得た。
次に、この混合物を、空気雰囲気中、620℃で10時間加熱する仮焼を行い、仮焼物(Al2TeO5)を得た。
得られた仮焼物にTeO2粉末(純度99.9質量%)とエタノールとを添加し、ボールミルを用いて湿式混合した。TeO2粉末の添加量は、Al2TeO5全量を基準として、35質量%とした。
湿式混合して得られた混合物を200MPaの圧力で一軸加圧し、円柱形状(直径:12mm)の成形体を作製した。
成形体を、電気炉を用いて、空気雰囲気中、900℃で2時間焼成して、誘電体磁器組成物からなる誘電体(焼結体)を得た。これを実施例1の誘電体とした。
(組成分析)
誘電体の組成を、XRDにより分析した。XRDによって検出された化合物は、表1に示すとおりであった。
作製した誘電体の高周波特性分析を、JIS R 1627に準拠して行った。具体的には、測定装置としてネットワークアナライザを用い、共振周波数f0、Q・f値、比誘電率εr、共振周波数の温度係数τfを測定した。測定結果は表1に示すとおりであった。
作製した誘電体の密度を、円柱の寸法と質量の測定値から計算によって求めた。結果は表1に示すとおりであった。
添加工程におけるTeO2の添加量及び焼成工程における焼成時間を、それぞれ表1に示すとおりに変更したこと以外は、実施例1と同様にして誘電体を作製した。これらを実施例2〜13の誘電体とした。そして、実施例1と同様にしてそれぞれの誘電体の評価を行った。評価結果は表1に示すとおりであった。
実施例5の誘電体に、空気雰囲気中、750℃で24時間加熱するアニール処理を施した。これを実施例14の誘電体とした。そして、実施例1と同様にして誘電体の評価を行った。評価結果は表1に示すとおりであった。
実施例5の誘電体に、空気雰囲気中、750℃で36時間加熱するアニール処理を施した。これを実施例15の誘電体とした。そして、実施例1と同様にして誘電体の評価を行った。評価結果は表1に示すとおりであった。
仮焼工程を行わなかったこと以外は、実施例1と同様にして誘電体を作製した。すなわち、Al2O3粉末とTeO2粉末とを含む混合物を成形して焼成し、誘電体を作製した。そして、実施例1と同様にして誘電体の評価を行った。評価結果は表1に示すとおりであった。
Claims (7)
- Al2TeO5を主成分として含有し、4.7g/cm 3 以上の密度を有する誘電体磁器組成物。
- TeO2を副成分として含有する請求項1記載の誘電体磁器組成物。
- 請求項1又は2記載の誘電体磁器組成物からなる誘電体。
- 請求項3記載の誘電体を備えるセラミックス基板。
- 請求項3記載の誘電体を備える電子部品。
- Al2O3とTeO2とを含む混合物を仮焼してAl2TeO5を得る仮焼工程と、
前記Al2TeO5にTeO2を添加して成形し、焼成して焼結体を得る焼成工程と、を有する、Al2TeO5を主成分として含有し、4.7g/cm 3 以上の密度を有する誘電体磁器組成物からなる誘電体の製造方法。 - 前記焼結体をアニール処理する工程を有する請求項6記載の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011502743A JP5574343B2 (ja) | 2009-03-03 | 2010-03-01 | 誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2009049308 | 2009-03-03 | ||
JP2009049308 | 2009-03-03 | ||
PCT/JP2010/053246 WO2010101114A1 (ja) | 2009-03-03 | 2010-03-01 | 誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 |
JP2011502743A JP5574343B2 (ja) | 2009-03-03 | 2010-03-01 | 誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2010101114A1 JPWO2010101114A1 (ja) | 2012-09-10 |
JP5574343B2 true JP5574343B2 (ja) | 2014-08-20 |
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JP2011502743A Expired - Fee Related JP5574343B2 (ja) | 2009-03-03 | 2010-03-01 | 誘電体磁器組成物、誘電体、セラミックス基板及び電子部品、並びに誘電体の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8481440B2 (ja) |
JP (1) | JP5574343B2 (ja) |
DE (1) | DE112010000971B4 (ja) |
WO (1) | WO2010101114A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3232551B1 (en) * | 2016-04-15 | 2020-08-19 | Nxp B.V. | Switch-mode power supply with noise filter |
KR102494324B1 (ko) * | 2016-07-27 | 2023-02-01 | 삼성전기주식회사 | 적층형 커패시터 및 그 실장 기판 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203706A (ja) * | 1983-05-02 | 1984-11-17 | Res Dev Corp Of Japan | テルル−アルミニウム系非晶質化合物材料及びその製造法 |
JP2005281023A (ja) * | 2004-03-29 | 2005-10-13 | Nippon Electric Glass Co Ltd | 高誘電率テルライトガラス |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3070421A (en) * | 1960-12-07 | 1962-12-25 | Owens Illinois Glass Co | Aluminum, chromium, and gallium tellurates |
JP2641521B2 (ja) | 1987-08-31 | 1997-08-13 | ティーディーケイ株式会社 | 配線基板 |
US4939106A (en) | 1987-08-31 | 1990-07-03 | Tdk Corporation | Sintered ceramic body |
JPH05105432A (ja) * | 1991-10-18 | 1993-04-27 | Ube Ind Ltd | アモルフアス強誘電体酸化物材料及びその製造方法 |
JP5397668B2 (ja) * | 2008-09-02 | 2014-01-22 | ソニー株式会社 | 記憶素子および記憶装置 |
-
2010
- 2010-03-01 DE DE112010000971.6T patent/DE112010000971B4/de not_active Expired - Fee Related
- 2010-03-01 US US13/203,922 patent/US8481440B2/en not_active Expired - Fee Related
- 2010-03-01 JP JP2011502743A patent/JP5574343B2/ja not_active Expired - Fee Related
- 2010-03-01 WO PCT/JP2010/053246 patent/WO2010101114A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59203706A (ja) * | 1983-05-02 | 1984-11-17 | Res Dev Corp Of Japan | テルル−アルミニウム系非晶質化合物材料及びその製造法 |
JP2005281023A (ja) * | 2004-03-29 | 2005-10-13 | Nippon Electric Glass Co Ltd | 高誘電率テルライトガラス |
Also Published As
Publication number | Publication date |
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JPWO2010101114A1 (ja) | 2012-09-10 |
US20120028787A1 (en) | 2012-02-02 |
US8481440B2 (en) | 2013-07-09 |
DE112010000971T5 (de) | 2012-10-11 |
WO2010101114A1 (ja) | 2010-09-10 |
DE112010000971B4 (de) | 2015-06-25 |
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