JP5553652B2 - 半導体基板および半導体装置 - Google Patents
半導体基板および半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 156
- 239000000758 substrate Substances 0.000 title claims description 58
- 238000001514 detection method Methods 0.000 claims description 56
- 239000004020 conductor Substances 0.000 claims description 38
- 238000011084 recovery Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 210000000746 body region Anatomy 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000010992 reflux Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
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Description
図1により、本発明の実施の形態1に係る半導体基板の構成について説明する。図1は本発明の実施の形態1に係る半導体基板の構成を示す断面図であり、トレンチゲート型MOSFETの断面図を示している。
実施の形態2は、実施の形態1において、MOSFET電流検出用電極10をn+型半導体領域7(ソース)のみに接触させたものである。
実施の形態1では、ダイオードのリカバリー電流とMOSFETの電流を検出して、デッドタイムを最適化する手法について述べたが、実際のスイッチング電源装置のスイッチング回路では、ハイサイドとローサイドのMOSFETは高速にスイッチングするため、ハイサイドMOSFETがターンオンした直後の電流は振動が大きく、電流の絶対値を高精度に検出することは難しい。
実施の形態4は、実施の形態1、2の半導体基板1を半導体装置上に搭載したものである。
実施の形態5は実施の形態4において、センスMOSFET用のワイヤ47とセンスダイオード用のワイヤ48を半導体装置41のリードフレーム端子に接続し、半導体装置41の外部で電流検出を行い、ドライバIC42に入力させるものである。
実施の形態6は、スイッチング電源装置のローサイドMOSFETに実施の形態1、2の半導体基板1を使用したものである。
Claims (9)
- 基板の主面の第1半導体領域と、
前記第1半導体領域上に形成され、前記第1半導体領域と逆の導電型を持つ第2半導体領域と、
前記第2半導体領域内に形成され、前記第1半導体領域と同一の導電型を持つ第3半導体領域と、
前記第1半導体領域、前記第2半導体領域および前記第3半導体領域内に形成され、前記基板の主面の第1方向に延在する溝と、
前記溝内に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された第1導電体とを備えた半導体基板であって、
前記半導体基板は、主電流領域と前記主電流領域に流れる主電流より小さい電流が流れる電流検出領域を有し、
前記主電流領域は、主面に第2導電体が配置され、前記第2導電体は前記第2半導体領域と前記第3半導体領域に接触し、
前記電流検出領域は、主面に第3導電体および第4導電体が配置され、前記第3導電体は前記第2半導体領域と前記第3半導体領域の両方に接触し、前記第4導電体は前記第2半導体領域に接触し、かつ前記第3半導体領域には接触しないことを特徴とする半導体基板。 - 電圧入力端子と基準電位端子との間に直列に接続される第1のスイッチング素子および第2のスイッチング素子と、前記第1のスイッチング素子および前記第2のスイッチング素子を駆動する駆動素子とを同一パッケージに実装し、前記駆動素子により前記第1のスイッチング素子および前記第2のスイッチング素子を相補的にオン、オフ制御する半導体装置であって、
前記第2のスイッチング素子は、請求項1に記載の半導体基板から構成され、少なくとも4つのパッドを有し、
前記4つのパッドはゲート用パッド、ソース用パッド、電流検出用パッド、およびボディダイオード電流検出用パッドで構成され、
前記ゲート用パッド、前記ソース用パッド、前記電流検出用パッド、および前記ボディダイオード電流検出用パッドは、それぞれ、前記半導体基板の第1導電体、第2導電体、第3導電体、および第4導電体に接続され、
前記駆動素子と前記4つのパッドはボンディングワイヤで接続されたことを特徴とする半導体装置。 - 電圧入力端子と基準電位端子との間に直列に接続される第1のスイッチング素子および第2のスイッチング素子と、前記第1のスイッチング素子および前記第2のスイッチング素子を駆動する駆動素子とを同一パッケージに実装し、前記駆動素子により前記第1のスイッチング素子および前記第2のスイッチング素子を相補的にオン、オフ制御する半導体装置であって、
前記第1のスイッチング素子および前記第2のスイッチング素子は、請求項1に記載の半導体基板から構成され、それぞれ少なくとも4つのパッドを有し、
前記4つのパッドはゲート用パッド、ソース用パッド、電流検出用パッド、およびボディダイオード電流検出用パッドで構成され、
前記ゲート用パッド、前記ソース用パッド、前記電流検出用パッド、および前記ボディダイオード電流検出用パッドは、それぞれ、前記半導体基板の第1導電体、第2導電体、第3導電体、および第4導電体に接続され、
前記駆動素子と前記第1のスイッチング素子および前記第2のスイッチング素子の前記4つのパッドはボンディングワイヤで接続されたことを特徴とする半導体装置。 - 請求項2または3に記載の半導体装置において、
前記駆動素子は、内部に前記電流検出用パッドと接続される第1の抵抗、および前記ボディダイオード電流検出用パッドに接続される第2の抵抗を有し、前記第1の抵抗および前記第2の抵抗の両端電圧を検出し、前記第1のスイッチング素子および前記第2のスイッチング素子のデッドタイムを制御することを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記駆動素子は、前記第1の抵抗および前記第2の抵抗の両端電圧をローパスフィルタを介して検出することを特徴とする半導体装置。 - 電圧入力端子と基準電位端子との間に直列に接続される第1のスイッチング素子および第2のスイッチング素子と、前記第1のスイッチング素子および前記第2のスイッチング素子を駆動する駆動素子とを同一パッケージに実装し、前記駆動素子により前記第1のスイッチング素子および前記第2のスイッチング素子を相補的にオン、オフ制御する半導体装置であって、
前記第2のスイッチング素子は、請求項1に記載の半導体基板から構成され、少なくとも4つのパッドを有し、
前記4つのパッドはゲート用パッド、ソース用パッド、電流検出用パッド、およびボディダイオード電流検出用パッドで構成され、
前記ゲート用パッド、前記ソース用パッド、前記電流検出用パッド、および前記ボディダイオード電流検出用パッドは、それぞれ、前記半導体基板の第1導電体、第2導電体、第3導電体、および第4導電体に接続され、
前記駆動素子と前記ソース用パッドおよび前記ゲート用パッドはボンディングワイヤで接続され、前記電流検出用パッドおよび前記ボディダイオード電流検出用パッドは、前記半導体装置のリードフレーム端子とボンディングワイヤで接続されたことを特徴とする半導体装置。 - 電圧入力端子と基準電位端子との間に直列に接続される第1のスイッチング素子および第2のスイッチング素子と、前記第1のスイッチング素子および前記第2のスイッチング素子を駆動する駆動素子とを同一パッケージに実装し、前記駆動素子により前記第1のスイッチング素子および前記第2のスイッチング素子を相補的にオン、オフ制御する半導体装置であって、
前記第1のスイッチング素子および前記第2のスイッチング素子は、請求項1に記載の半導体基板から構成され、それぞれ少なくとも4つのパッドを有し、
前記4つのパッドはゲート用パッド、ソース用パッド、電流検出用パッド、およびボディダイオード電流検出用パッドで構成され、
前記ゲート用パッド、前記ソース用パッド、前記電流検出用パッド、および前記ボディダイオード電流検出用パッドは、それぞれ、前記半導体基板の第1導電体、第2導電体、第3導電体、および第4導電体に接続され、
前記駆動素子と前記第1のスイッチング素子および前記第2のスイッチング素子の前記ソース用パッドおよび前記ゲート用パッドはボンディングワイヤで接続され、前記第1のスイッチング素子および前記第2のスイッチング素子の前記電流検出用パッドおよび前記ボディダイオード電流検出用パッドは、前記半導体装置のリードフレーム端子とボンディングワイヤで接続されたことを特徴とする半導体装置。 - 請求項6または7に記載の半導体装置において、
前記電流検出用パッドおよび前記ボディダイオード電流検出用パッドが接続された前記リードフレーム端子にそれぞれ第1の抵抗および第2の抵抗が接続され、
前記駆動素子は、前記第1の抵抗および前記第2の抵抗の両端電圧を検出し、前記第1のスイッチング素子および前記第2のスイッチング素子のデッドタイムを制御することを特徴とする半導体装置。 - 請求項8に記載の半導体装置において、
前記駆動素子は、前記第1の抵抗および前記第2の抵抗の両端電圧をローパスフィルタを介して検出することを特徴とする半導体装置。
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