JP5549680B2 - 圧電素子の製造方法及びその製造方法により製造された圧電素子 - Google Patents
圧電素子の製造方法及びその製造方法により製造された圧電素子 Download PDFInfo
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- JP5549680B2 JP5549680B2 JP2011549772A JP2011549772A JP5549680B2 JP 5549680 B2 JP5549680 B2 JP 5549680B2 JP 2011549772 A JP2011549772 A JP 2011549772A JP 2011549772 A JP2011549772 A JP 2011549772A JP 5549680 B2 JP5549680 B2 JP 5549680B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 76
- 239000013078 crystal Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 35
- 239000010408 film Substances 0.000 description 31
- 238000004544 sputter deposition Methods 0.000 description 21
- 239000010936 titanium Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 18
- 229910052719 titanium Inorganic materials 0.000 description 18
- 229910052697 platinum Inorganic materials 0.000 description 17
- 239000003795 chemical substances by application Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 15
- 238000005530 etching Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 4
- 230000002040 relaxant effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D11/00—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated
- F02D11/02—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated characterised by hand, foot, or like operator controlled initiation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D11/00—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated
- F02D11/06—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated characterised by non-mechanical control linkages, e.g. fluid control linkages or by control linkages with power drive or assistance
- F02D11/10—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated characterised by non-mechanical control linkages, e.g. fluid control linkages or by control linkages with power drive or assistance of the electric type
- F02D2011/101—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated characterised by non-mechanical control linkages, e.g. fluid control linkages or by control linkages with power drive or assistance of the electric type characterised by the means for actuating the throttles
- F02D2011/103—Arrangements for, or adaptations to, non-automatic engine control initiation means, e.g. operator initiated characterised by non-mechanical control linkages, e.g. fluid control linkages or by control linkages with power drive or assistance of the electric type characterised by the means for actuating the throttles at least one throttle being alternatively mechanically linked to the pedal or moved by an electric actuator
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02D—CONTROLLING COMBUSTION ENGINES
- F02D2400/00—Control systems adapted for specific engine types; Special features of engine control systems not otherwise provided for; Power supply, connectors or cabling for engine control systems
- F02D2400/06—Small engines with electronic control, e.g. for hand held tools
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/308—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
Claims (8)
- 基板層の上面に、圧電層の成膜時に前記圧電層に加わる応力を緩和するための中間層を形成する第1ステップと、
前記圧電層の成膜時に前記圧電層への応力が対称的に加わるように、円柱形状となる前記圧電層が形成されるべき領域を残して前記中間層の一部を除去する第2ステップと、
前記中間層の上面に円柱形状の前記圧電層を形成する第3ステップとを備える圧電素子の製造方法。 - 前記第2ステップは、前記中間層上の所定の独立した領域を残して、その周囲を除去する請求項1記載の圧電素子の製造方法。
- 前記中間層は、電極層及び応力緩和層を含み、
前記第1ステップは、前記基板層の上面に前記電極層を形成し、形成した電極層の上面に前記応力緩和層を形成する請求項1又は2記載の圧電素子の製造方法。 - 前記第2ステップは、前記電極層の上面に形成された前記応力緩和層の一部を除去し、
前記第3ステップは、前記電極層の上面及び前記応力緩和層の上面に前記圧電層を形成し、前記電極層の上面に形成された圧電層を除去する請求項3記載の圧電素子の製造方法。 - 前記基板層は、基板及び熱酸化膜を含み、
前記第1ステップは、前記熱酸化膜の上面に前記中間層を形成する請求項1〜4のいずれかに記載の圧電素子の製造方法。 - 基板層と、
圧電層の成膜時に前記圧電層に加わる応力が緩和されながら対称的に加わるようにするために、前記基板層の上面において、円柱形状となる前記圧電層が形成されるべき領域を除く一部の領域が除去されるように形成された中間層と、
前記中間層の上面に形成された円柱形状の圧電層とを備え、
前記圧電層は単結晶である圧電素子。 - 前記圧電層は、前記中間層における前記一部の領域が除去された後に成膜されたものである請求項6記載の圧電素子。
- 前記基板層は、表面に酸化膜層が形成され、
前記中間層は、前記酸化膜層の上面に形成された下部電極層と、前記下部電極層の上面の所定の領域に形成された応力緩和層とを含み、
前記圧電層は、前記応力緩和層の上面に形成され、
前記圧電層の上面に形成された上部電極層を更に備え、
前記応力緩和層の格子定数は、前記下部電極層の格子定数と前記圧電層の格子定数との間の値を持つ請求項6又は7記載の圧電素子。
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JP2011549772A JP5549680B2 (ja) | 2010-01-12 | 2010-12-21 | 圧電素子の製造方法及びその製造方法により製造された圧電素子 |
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PCT/JP2010/007389 WO2011086645A1 (ja) | 2010-01-12 | 2010-12-21 | 圧電素子の製造方法及びその製造方法により製造された圧電素子 |
JP2011549772A JP5549680B2 (ja) | 2010-01-12 | 2010-12-21 | 圧電素子の製造方法及びその製造方法により製造された圧電素子 |
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JPWO2011086645A1 JPWO2011086645A1 (ja) | 2013-05-16 |
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US (1) | US9157378B2 (ja) |
EP (1) | EP2525423B1 (ja) |
JP (1) | JP5549680B2 (ja) |
WO (1) | WO2011086645A1 (ja) |
Families Citing this family (5)
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US20100233353A1 (en) * | 2009-03-16 | 2010-09-16 | Applied Materials, Inc. | Evaporator, coating installation, and method for use thereof |
JP5861404B2 (ja) * | 2011-11-18 | 2016-02-16 | コニカミノルタ株式会社 | 圧電素子およびその製造方法 |
JP6314777B2 (ja) * | 2014-09-30 | 2018-04-25 | セイコーエプソン株式会社 | 超音波センサー並びにプローブおよび電子機器 |
JP6698383B2 (ja) * | 2016-03-08 | 2020-05-27 | 富士フイルム株式会社 | 圧電素子 |
CN117460388A (zh) * | 2023-12-25 | 2024-01-26 | 天通瑞宏科技有限公司 | 一种复合衬底及其制备方法 |
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JP2006086368A (ja) * | 2004-09-16 | 2006-03-30 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、周波数フィルタ、発振器、電子回路、薄膜圧電共振子、および電子機器 |
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EP2525423A1 (en) | 2012-11-21 |
WO2011086645A1 (ja) | 2011-07-21 |
EP2525423A4 (en) | 2014-01-22 |
US9157378B2 (en) | 2015-10-13 |
JPWO2011086645A1 (ja) | 2013-05-16 |
EP2525423B1 (en) | 2016-03-02 |
US20120293040A1 (en) | 2012-11-22 |
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