JP5497985B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
- Publication number
- JP5497985B2 JP5497985B2 JP2007531463A JP2007531463A JP5497985B2 JP 5497985 B2 JP5497985 B2 JP 5497985B2 JP 2007531463 A JP2007531463 A JP 2007531463A JP 2007531463 A JP2007531463 A JP 2007531463A JP 5497985 B2 JP5497985 B2 JP 5497985B2
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- semiconductor package
- package according
- electrode
- conductive
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 112
- 238000001514 detection method Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- -1 polysiloxane Polymers 0.000 claims description 4
- 229920001296 polysiloxane Polymers 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- 229910001128 Sn alloy Inorganic materials 0.000 claims 2
- 229920001940 conductive polymer Polymers 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 230000002457 bidirectional effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
10 半導体ダイ
12 第1の電極
14 第2の電極
16,18 フィンガー部
20,22 共用給電部
24 第1の制御電極
26 第2の制御電極
28 第1の電流検知電極
29 第2の電流検知電極
30 半導体パッケージ
32 第1の導電性クリップ
34 第2の導電性クリップ
33 フィンガー部
35 フィンガー部
31,37 共用コネクタ
36 第1の導電性クリップ
38 第2の導電性クリップ
40 第1の電流検知導電性クリップ
42 第2の電流検知導電性クリップ
44 不動態被膜
46 外部接続面
48 接着剤
Claims (28)
- ソース電極およびドレイン電極を同一面上に有する半導体ダイと、
第1の共用コネクタに接続された第1の複数のフィンガー部を有する第1の導電性クリップであって、前記第1の共用コネクタは、前記半導体ダイの同一面上で前記ソース電極と電気的および機械的に接続され、前記半導体ダイの外縁を超えて外側に延出するフランジを構成する、該第1の導電性クリップと、
第2の共用コネクタに接続された第2の複数のフィンガー部を有し、前記ドレイン電極と電気的および機械的に接続された第2の導電性クリップと、
前記半導体ダイを包み込む不動態被膜であって、他のハウジング要素無しに前記半導体ダイを保護可能な不動態材料から形成される該不動態被膜と
を備える半導体パッケージ。 - 前記半導体ダイは、3価の窒化物系半導体から形成されていることを特徴とする請求項1記載の半導体パッケージ。
- 前記3価の窒化物系半導体は、InAlGaN系合金であることを特徴とする請求項2記載の半導体パッケージ。
- 前記ソース電極および前記ドレイン電極は、フィンガー部を有することを特徴とする請求項1記載の半導体パッケージ。
- 前記各電極のフィンガー部は、互いに間に入り込むように配置されていることを特徴とする請求項4記載の半導体パッケージ。
- 制御電極と、この制御電極と電気的および機械的に接続された導電性クリップとをさらに備えることを特徴とする請求項1記載の半導体パッケージ。
- 電流検知電極と、この電流検知電極と電気的および機械的に接続された電流検知クリップとをさらに備えることを特徴とする請求項6記載の半導体パッケージ。
- 前記半導体ダイは、第1の制御電極、この第1の制御電極と電気的および機械的に接続された第1の導電性制御クリップ、第2の制御電極、ならびにこの第2の制御電極と電気的および機械的に接続された第2の導電性制御クリップを備えることを特徴とする請求項1記載の半導体パッケージ。
- 電流検知電極と、この電流検知電極と電気的および機械的に接続された第1の電流検知導電性クリップとをさらに備えていることを特徴とする請求項8記載の半導体パッケージ。
- 前記第1および第2の導電性クリップは、導電性の接着剤を介して、それぞれ、前記ソース電極および前記ドレイン電極と電気的および機械的に接続されていることを特徴とする請求項1記載の半導体パッケージ。
- 前記導電性の接着剤は、金とスズの合金からなることを特徴とする請求項10記載の半導体パッケージ。
- 前記導電性の接着剤は、半田または導電性のポリマーからなることを特徴とする請求項10記載の半導体パッケージ。
- 前記不動態被膜は、ポリマーからなることを特徴とする請求項1記載の半導体パッケージ。
- 前記ポリマーは、ポリシロキサンであることを特徴とする請求項13記載の半導体パッケージ。
- それぞれフィンガー部を含むソース電極およびドレイン電極を同一面上に有する半導体ダイと、
第1の共用コネクタを有する第1の導電性クリップであって、前記第1の共用コネクタは前記半導体ダイの前記同一面上で前記ソース電極と電気的および機械的に接続され、前記半導体ダイの外縁を超えて外側に延出するフランジを構成する、該第1の導電性クリップと、
前記ドレイン電極と電気的および機械的に接続された第2の導電性クリップと、
を備える半導体パッケージ。 - 前記半導体ダイを包み込む不動態被膜をさらに備えていることを特徴とする請求項15記載の半導体パッケージ。
- 前記半導体ダイは、3価の窒化物系半導体から形成されていることを特徴とする請求項15記載の半導体パッケージ。
- 前記3価の窒化物系半導体は、InAlGaN系合金であることを特徴とする請求項17記載の半導体パッケージ。
- 前記各電極のフィンガー部は、互いに間に入り込むように配置されていることを特徴とする請求項15記載の半導体パッケージ。
- 制御電極と、この制御電極と電気的および機械的に接続された導電性クリップとをさらに備えていることを特徴とする請求項15記載の半導体パッケージ。
- 電流検知電極と、この電流検知電極と電気的および機械的に接続された電流検知クリップとをさらに備えていることを特徴とする請求項20記載の半導体パッケージ。
- 前記半導体ダイは、第1の制御電極、この第1の制御電極と電気的および機械的に接続された第1の導電性制御クリップ、第2の制御電極、ならびにこの第2の制御電極と電気的および機械的に接続された第2の導電性制御クリップを備えていることを特徴とする請求項15記載の半導体パッケージ。
- 電流検知電極と、この電流検知電極と電気的および機械的に接続された電流検知クリップとをさらに備えていることを特徴とする請求項22記載の半導体パッケージ。
- 前記第1および第2の導電性クリップは、導電性の接着剤を介して、それぞれ、前記ソース電極および前記ドレイン電極と電気的および機械的に接続されていることを特徴とする請求項15記載の半導体パッケージ。
- 前記導電性の接着剤は、半田または導電性のポリマーからなることを特徴とする請求項24記載の半導体パッケージ。
- 前記導電性の接着剤は、金とスズの合金からなることを特徴とする請求項24記載の半導体パッケージ。
- 前記不動態被膜は、ポリマーからなることを特徴とする請求項16記載の半導体パッケージ。
- 前記ポリマーは、ポリシロキサンであることを特徴とする請求項27記載の半導体パッケージ。
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US60959704P | 2004-09-13 | 2004-09-13 | |
US60/609,597 | 2004-09-13 | ||
PCT/US2005/032743 WO2006031886A2 (en) | 2004-09-13 | 2005-09-13 | Power semiconductor package |
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US12046668B2 (en) | 2022-03-09 | 2024-07-23 | Kabushiki Kaisha Toshiba | Semiconductor device |
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CN100444371C (zh) | 2004-09-13 | 2008-12-17 | 国际整流器公司 | 功率半导体封装 |
US20060202320A1 (en) * | 2005-03-10 | 2006-09-14 | Schaffer Christopher P | Power semiconductor package |
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US20070187288A1 (en) * | 2006-02-16 | 2007-08-16 | Haggard Clifton C | Disk holding device |
US7655962B2 (en) * | 2007-02-23 | 2010-02-02 | Sensor Electronic Technology, Inc. | Enhancement mode insulated gate heterostructure field-effect transistor with electrically isolated RF-enhanced source contact |
US7674666B2 (en) * | 2007-02-23 | 2010-03-09 | Sensor Electronic Technology, Inc. | Fabrication of semiconductor device having composite contact |
US8174099B2 (en) * | 2008-08-13 | 2012-05-08 | Atmel Corporation | Leadless package with internally extended package leads |
US8338871B2 (en) * | 2008-12-23 | 2012-12-25 | Sensor Electronic Technology, Inc. | Field effect transistor with electric field and space-charge control contact |
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US9620471B2 (en) | 2017-04-11 |
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US20150262960A1 (en) | 2015-09-17 |
US20060131760A1 (en) | 2006-06-22 |
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US9048196B2 (en) | 2015-06-02 |
US7466012B2 (en) | 2008-12-16 |
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