JP5417383B2 - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
- Publication number
- JP5417383B2 JP5417383B2 JP2011131271A JP2011131271A JP5417383B2 JP 5417383 B2 JP5417383 B2 JP 5417383B2 JP 2011131271 A JP2011131271 A JP 2011131271A JP 2011131271 A JP2011131271 A JP 2011131271A JP 5417383 B2 JP5417383 B2 JP 5417383B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- substrate
- interlayer insulating
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000011229 interlayer Substances 0.000 claims description 113
- 239000000758 substrate Substances 0.000 claims description 112
- 239000010410 layer Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 230000000149 penetrating effect Effects 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 229910010272 inorganic material Inorganic materials 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 151
- 239000000463 material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Crystal (AREA)
- Geometry (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
Description
絶縁基板と、前記絶縁基板の上に形成されたスイッチング素子と、前記絶縁基板及び前記スイッチング素子の上に配置され前記スイッチング素子まで貫通した第1コンタクトホールを有する有機絶縁膜と、前記有機絶縁膜の上に形成され前記第1コンタクトホールを介して前記スイッチング素子に電気的に接続された島状の中継電極と、前記有機絶縁膜の上に形成され前記中継電極から離間した共通電極と、前記中継電極及び前記共通電極の上に配置され前記第1コンタクトホールの直上の位置とは異なる位置で前記中継電極まで貫通した第2コンタクトホールを有する層間絶縁膜と、前記層間絶縁膜の上に形成され前記第2コンタクトホールを介して前記中継電極に電気的に接続され前記共通電極と向かい合うスリットを有する画素電極と、を備えた第1基板と、前記第1基板に対向配置された第2基板と、前記第1基板と前記第2基板との間に保持された液晶分子を含む液晶層と、を備えたことを特徴とする液晶表示装置が提供される。
絶縁基板と、前記絶縁基板の上に形成されたスイッチング素子と、前記絶縁基板及び前記スイッチング素子の上に配置され第1上面及び前記第1上面から前記スイッチング素子まで貫通した第1コンタクトホールを有する有機絶縁膜と、前記有機絶縁膜の前記第1上面及び前記第1コンタクトホールに形成され前記スイッチング素子に電気的に接続された島状の中継電極と、前記有機絶縁膜の前記第1上面に形成され前記中継電極から離間した共通電極と、前記中継電極及び前記共通電極の上に配置され第2上面及び前記第2上面から前記有機絶縁膜の前記第1上面に形成された前記中継電極まで貫通した第2コンタクトホールを有する層間絶縁膜と、前記層間絶縁膜の前記第2上面に形成されるとともに前記第2コンタクトホールで前記中継電極に積層され前記共通電極と向かい合うスリットを有する画素電極と、を備えた第1基板と、前記第1基板に対向配置された第2基板と、前記第1基板と前記第2基板との間に保持された液晶分子を含む液晶層と、を備えたことを特徴とする液晶表示装置が提供される。
画素電極及び共通電極を備えた第1基板と第2基板との間に液晶層を保持した液晶表示装置の製造方法であって、絶縁基板の上にスイッチング素子を形成し、前記スイッチング素子を有機絶縁膜で覆った後に、前記有機絶縁膜に前記スイッチング素子まで貫通した第1コンタクトホールを形成し、前記有機絶縁膜の上に第1導電材料を成膜し、前記第1導電材料をパターニングして、前記第1コンタクトホールを介して前記スイッチング素子に電気的に接続した島状の中継電極、及び、前記中継電極から離間した共通電極を形成し、前記中継電極及び前記共通電極を層間絶縁膜で覆った後に、前記層間絶縁膜のうち、前記第1コンタクトホールの直上の位置とは異なる位置に前記中継電極まで貫通した第2コンタクトホールを形成し、前記層間絶縁膜の上に第2導電材料を成膜し、前記第2導電材料をパターニングして、前記第2コンタクトホールを介して前記中継電極に電気的に接続し前記共通電極と向かい合うスリットを有する画素電極を形成する、ことを特徴とする液晶表示装置の製造方法が提供される。
ACT…アクティブエリア PX…画素
SW…スイッチング素子
RE…中継電極 PE…画素電極 CE…共通電極
LQ…液晶層
CH1…第1コンタクトホール CH2…第2コンタクトホール
23…第2層間絶縁膜(有機絶縁膜)
24…第3層間絶縁膜
Claims (10)
- 絶縁基板と、前記絶縁基板の上に形成されたスイッチング素子と、前記絶縁基板及び前記スイッチング素子の上に配置され前記スイッチング素子まで貫通した第1コンタクトホールを有する有機絶縁膜と、前記有機絶縁膜の上に形成され前記第1コンタクトホールを介して前記スイッチング素子に電気的に接続された島状の中継電極と、前記有機絶縁膜の上に形成され前記中継電極から離間した共通電極と、前記中継電極及び前記共通電極の上に配置され前記第1コンタクトホールの直上の位置とは異なる位置で前記中継電極まで貫通した第2コンタクトホールを有する層間絶縁膜と、前記層間絶縁膜の上に形成され前記第2コンタクトホールを介して前記中継電極に電気的に接続され前記共通電極と向かい合うスリットを有する画素電極と、を備えた第1基板と、
前記第1基板に対向配置された第2基板と、
前記第1基板と前記第2基板との間に保持された液晶分子を含む液晶層と、
を備え、前記中継電極及び前記画素電極の膜構造が前記層間絶縁膜の膜構造よりも粗いことを特徴とする液晶表示装置。 - 絶縁基板と、前記絶縁基板の上に形成されたスイッチング素子と、前記絶縁基板及び前記スイッチング素子の上に配置され第1上面及び前記第1上面から前記スイッチング素子まで貫通した第1コンタクトホールを有する有機絶縁膜と、前記有機絶縁膜の前記第1上面及び前記第1コンタクトホールに形成され前記スイッチング素子に電気的に接続された島状の中継電極と、前記有機絶縁膜の前記第1上面に形成され前記中継電極から離間した共通電極と、前記中継電極及び前記共通電極の上に配置され第2上面及び前記第2上面から前記有機絶縁膜の前記第1上面に形成された前記中継電極まで貫通した第2コンタクトホールを有する層間絶縁膜と、前記層間絶縁膜の前記第2上面に形成されるとともに前記第2コンタクトホールで前記中継電極に積層され前記共通電極と向かい合うスリットを有する画素電極と、を備えた第1基板と、
前記第1基板に対向配置された第2基板と、
前記第1基板と前記第2基板との間に保持された液晶分子を含む液晶層と、
を備え、前記中継電極及び前記画素電極の膜構造が前記層間絶縁膜の膜構造よりも粗いことを特徴とする液晶表示装置。 - 前記中継電極及び前記共通電極は、透明な導電材料によって形成されたことを特徴とする請求項1または2に記載の液晶表示装置。
- 前記有機絶縁膜は、透明な有機材料によって形成されたことを特徴とする請求項1乃至3のいずれか1項に記載の液晶表示装置。
- 前記層間絶縁膜は、シリコン(Si)を含む無機材料によって形成されたことを特徴とする請求項1乃至4のいずれか1項に記載の液晶表示装置。
- 前記スイッチング素子は、ポリシリコン半導体層を備えたことを特徴とする請求項1乃至5のいずれか1項に記載の液晶表示装置。
- 画素電極及び共通電極を備えた第1基板と第2基板との間に液晶層を保持した液晶表示装置の製造方法であって、
絶縁基板の上にスイッチング素子を形成し、
前記スイッチング素子を有機絶縁膜で覆った後に、前記有機絶縁膜に前記スイッチング素子まで貫通した第1コンタクトホールを形成し、
前記有機絶縁膜の上に第1導電材料を成膜し、
前記第1導電材料をパターニングして、前記第1コンタクトホールを介して前記スイッチング素子に電気的に接続した島状の中継電極、及び、前記中継電極から離間した共通電極を形成し、
前記中継電極及び前記共通電極を層間絶縁膜で覆った後に、前記層間絶縁膜のうち、前記第1コンタクトホールの直上の位置とは異なる位置に前記中継電極まで貫通した第2コンタクトホールを形成し、
前記層間絶縁膜の上に第2導電材料を成膜し、
前記第2導電材料をパターニングして、前記第2コンタクトホールを介して前記中継電極に電気的に接続し前記共通電極と向かい合うスリットを有する画素電極を形成する製造方法であって、前記中継電極及び前記画素電極の膜構造が前記層間絶縁膜の膜構造よりも粗いことを特徴とする液晶表示装置の製造方法。 - 前記第1導電材料及び前記第2導電材料は、透明であることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記有機絶縁膜は、透明な有機材料によって形成することを特徴とする請求項7または8に記載の液晶表示装置の製造方法。
- 前記層間絶縁膜は、シリコン(Si)を含む無機材料によって形成することを特徴とする請求項7乃至9のいずれか1項に記載の液晶表示装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011131271A JP5417383B2 (ja) | 2011-06-13 | 2011-06-13 | 液晶表示装置及びその製造方法 |
US13/493,470 US8885129B2 (en) | 2011-06-13 | 2012-06-11 | Liquid crystal display device and method of manufacturing the same |
US14/505,292 US9395587B2 (en) | 2011-06-13 | 2014-10-02 | Liquid crystal display device and method of manufacturing the same |
US15/189,530 US9921437B2 (en) | 2011-06-13 | 2016-06-22 | Display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011131271A JP5417383B2 (ja) | 2011-06-13 | 2011-06-13 | 液晶表示装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013003200A JP2013003200A (ja) | 2013-01-07 |
JP5417383B2 true JP5417383B2 (ja) | 2014-02-12 |
Family
ID=47292913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011131271A Active JP5417383B2 (ja) | 2011-06-13 | 2011-06-13 | 液晶表示装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US8885129B2 (ja) |
JP (1) | JP5417383B2 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7042024B2 (en) * | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
JP5417383B2 (ja) * | 2011-06-13 | 2014-02-12 | 株式会社ジャパンディスプレイ | 液晶表示装置及びその製造方法 |
CN104166278B (zh) * | 2013-05-16 | 2019-03-01 | 瀚宇彩晶股份有限公司 | 像素阵列基板 |
KR20150040153A (ko) * | 2013-10-04 | 2015-04-14 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 이의 제조 방법 |
KR102198111B1 (ko) | 2013-11-04 | 2021-01-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
CN103700669A (zh) * | 2013-12-19 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
JP6336765B2 (ja) | 2014-01-31 | 2018-06-06 | 株式会社ジャパンディスプレイ | 表示装置 |
US9608008B2 (en) | 2014-02-21 | 2017-03-28 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing same |
JP6483411B2 (ja) | 2014-11-19 | 2019-03-13 | 株式会社ジャパンディスプレイ | 表示装置 |
US9673287B2 (en) * | 2014-12-15 | 2017-06-06 | Infineon Technologies Americas Corp. | Reliable and robust electrical contact |
KR102356342B1 (ko) * | 2015-06-08 | 2022-01-27 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그의 제조 방법 |
JP6656907B2 (ja) * | 2015-12-17 | 2020-03-04 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
CN105607365A (zh) * | 2015-12-31 | 2016-05-25 | 深圳市华星光电技术有限公司 | 一种coa基板及其制作方法 |
CN107526218B (zh) | 2016-06-22 | 2020-07-07 | 群创光电股份有限公司 | 显示面板 |
JP2018025670A (ja) * | 2016-08-10 | 2018-02-15 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
US10983406B2 (en) * | 2017-01-06 | 2021-04-20 | Sharp Kabushiki Kaisha | Curved display panel |
CN106952583B (zh) * | 2017-05-23 | 2019-04-30 | 深圳市华星光电技术有限公司 | 柔性阵列基板的制作方法 |
JP7237633B2 (ja) * | 2019-02-14 | 2023-03-13 | 株式会社ジャパンディスプレイ | 表示装置 |
JP7306906B2 (ja) * | 2019-07-19 | 2023-07-11 | 株式会社ジャパンディスプレイ | アレイ基板及び表示装置 |
CN110570812B (zh) * | 2019-10-18 | 2020-11-10 | 纳晶科技股份有限公司 | 像素电路、其制作方法和显示装置 |
CN113985667B (zh) * | 2021-10-12 | 2023-08-01 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、液晶显示面板 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000292801A (ja) * | 1999-04-06 | 2000-10-20 | Nec Corp | 液晶表示装置 |
JP2001264740A (ja) * | 2000-03-16 | 2001-09-26 | Seiko Epson Corp | 液晶装置とその製造方法および電子機器 |
JP2004151546A (ja) * | 2002-10-31 | 2004-05-27 | Sharp Corp | アクティブマトリクス基板および表示装置 |
JP2004302382A (ja) * | 2003-04-01 | 2004-10-28 | Seiko Epson Corp | 電気光学装置用基板及びその製造方法並びに電気光学装置 |
US7161184B2 (en) * | 2003-06-16 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
JP4637815B2 (ja) * | 2005-12-05 | 2011-02-23 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び電子機器 |
JP4907245B2 (ja) * | 2006-07-07 | 2012-03-28 | 株式会社 日立ディスプレイズ | 半透過型液晶表示装置 |
JP4858187B2 (ja) * | 2007-01-25 | 2012-01-18 | ソニー株式会社 | 液晶表示装置及び液晶表示装置の製造方法並びに電子機器 |
US7903219B2 (en) * | 2007-08-16 | 2011-03-08 | Sony Corporation | Liquid crystal display device |
CN101978480B (zh) * | 2008-04-25 | 2012-05-02 | 夏普株式会社 | 多层配线、半导体装置、显示装置用基板和显示装置 |
JP5408914B2 (ja) * | 2008-07-03 | 2014-02-05 | 株式会社ジャパンディスプレイ | 液晶表示パネル |
US8629960B2 (en) * | 2008-10-02 | 2014-01-14 | Sharp Kabushiki Kaisha | Display device substrate, display device substrate manufacturing method, display device, liquid crystal display device, liquid crystal display device manufacturing method and organic electroluminescent display device |
JP2010102220A (ja) * | 2008-10-27 | 2010-05-06 | Seiko Epson Corp | 液晶装置の製造方法および液晶装置 |
US8217913B2 (en) | 2009-02-02 | 2012-07-10 | Apple Inc. | Integrated touch screen |
JP5427552B2 (ja) * | 2009-10-30 | 2014-02-26 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP4911793B2 (ja) | 2009-11-09 | 2012-04-04 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置 |
JP5417383B2 (ja) * | 2011-06-13 | 2014-02-12 | 株式会社ジャパンディスプレイ | 液晶表示装置及びその製造方法 |
-
2011
- 2011-06-13 JP JP2011131271A patent/JP5417383B2/ja active Active
-
2012
- 2012-06-11 US US13/493,470 patent/US8885129B2/en active Active
-
2014
- 2014-10-02 US US14/505,292 patent/US9395587B2/en active Active
-
2016
- 2016-06-22 US US15/189,530 patent/US9921437B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120314169A1 (en) | 2012-12-13 |
US9395587B2 (en) | 2016-07-19 |
US20160299393A1 (en) | 2016-10-13 |
JP2013003200A (ja) | 2013-01-07 |
US20150055075A1 (en) | 2015-02-26 |
US9921437B2 (en) | 2018-03-20 |
US8885129B2 (en) | 2014-11-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5417383B2 (ja) | 液晶表示装置及びその製造方法 | |
JP5520899B2 (ja) | 液晶表示装置 | |
JP5636342B2 (ja) | 液晶表示装置 | |
JP2011209454A (ja) | 液晶表示装置 | |
JP5604457B2 (ja) | 液晶表示装置 | |
JP6205113B2 (ja) | 液晶表示装置 | |
JP5830433B2 (ja) | 液晶表示装置 | |
JP2012003149A (ja) | 液晶表示装置 | |
JP2015079207A (ja) | 表示装置 | |
JP2014145992A (ja) | 液晶表示装置 | |
JP2012132993A (ja) | 液晶表示装置 | |
JP2013029778A (ja) | 液晶表示装置 | |
JP2015069195A (ja) | 液晶表示装置 | |
JP6093575B2 (ja) | 液晶表示装置 | |
JP2017111327A (ja) | 液晶表示装置 | |
JP6039914B2 (ja) | 液晶表示装置 | |
JP2014174431A (ja) | 液晶表示装置 | |
JP2013127558A (ja) | 液晶表示装置 | |
JP2017111328A (ja) | 液晶表示装置 | |
JP2014174402A (ja) | 液晶表示装置 | |
JP2013025256A (ja) | 液晶表示装置及びその製造方法 | |
JP2014077925A (ja) | 液晶表示装置 | |
JP6093577B2 (ja) | 液晶表示装置 | |
JP2013114069A (ja) | 液晶表示装置 | |
JP5542994B2 (ja) | 液晶表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130614 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20130614 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20130705 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131022 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131118 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5417383 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |