JP5366405B2 - 遮光瞳を有する高開口率対物光学系 - Google Patents
遮光瞳を有する高開口率対物光学系 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
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- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
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Description
NA = n0*sinΘmax
ここで、Rは、解像可能な投影対物光学系の最小寸法を表し、kは、寸法に依存しない定数で、処理係数と呼ぶ。処理係数kは、例えば、抵抗物質の極性特性等の各種要件によって変動する。通常、kは0.4から0.8の範囲にあるが、特殊なケースでは0.4を上回る、或いは0.8を下回ることもある。
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
凸鏡−凹鏡−凸鏡−凹鏡−凸鏡−凹鏡−凹鏡−凹鏡
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
凸鏡−凹鏡−凸鏡−凹鏡−凸鏡−凹鏡−凹鏡−凹鏡
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S5
鏡4:鏡S6
鏡5:鏡S3
鏡6:鏡S4
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡SP1
鏡2:鏡SP2
鏡3:鏡SP3
鏡4:鏡SP4
鏡5:鏡SP5
鏡6:鏡SP6
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡SP1
鏡2:鏡SP2
鏡3:鏡SP3
鏡4:鏡SP4
鏡5:鏡SP5
鏡6:鏡SP6
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡SP1
鏡2:鏡SP2
鏡3:鏡SP3
鏡4:鏡SP4
鏡5:鏡SP5
鏡6:鏡SP6
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡SP1
鏡2:鏡SP2
鏡3:鏡SP3
鏡4:鏡SP4
鏡5:鏡SP5
鏡6:鏡SP6
鏡7:1次凹面鏡SK1
鏡8:2次凹面鏡SK2
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
凹鏡―凹鏡―凸鏡−凹鏡−凸鏡−凹鏡
平鏡−凹鏡―凸鏡−凹鏡−凸鏡−凹鏡
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
の条件が保たれる場合、面遮光は最小となり、図13に示す実施例の10%ではなく、図14に示す実施例においては僅か8%となる。ここで、d1は最後の鏡1030の直径でり、d2は最後から4番目の鏡1000の直径であり、z1は第1の鏡表面から中間像への光軸HAに沿った距離であり、z2は、鏡1000の光学面から中間像z2への光軸HAに沿った距離である。
鏡1:鏡S10
鏡2:鏡S20
鏡3:鏡S50
鏡4:鏡S60
鏡5:鏡S70
鏡6:鏡S80
鏡7:鏡S30
鏡8:鏡S40
鏡9:1次凹面鏡SK1
鏡10:2次凹面鏡SK2
対象物:対象物面
鏡1:鏡S100
鏡2:鏡S200
鏡3:鏡S300
鏡4:鏡S400
鏡5:鏡S500
絞り:開口絞り
鏡6:鏡S600
像:結像面
対象物:対象物面
鏡1:鏡S100
鏡2:鏡S200
鏡3:鏡S300
鏡4:鏡S400
鏡5:鏡S500
絞り:開口絞り
鏡6:鏡S600
像:結像面
鏡S1は凸面鏡。
鏡S2は凹面鏡。
鏡S5は凸面鏡。
鏡S6は凹面鏡。
鏡S3は凸面鏡。
鏡S4は凹面鏡。
鏡SK1は凹面鏡。
鏡SK2は凹面鏡。
対象物:対象物面
鏡1:鏡MIR1
鏡2:鏡MIR2
鏡3:鏡MIR3
鏡4:鏡MIR4
鏡5:鏡MIR5
鏡6:鏡MIR6
鏡7:鏡MIR7
鏡8:鏡MIR8
鏡9:鏡MIR9
鏡10:鏡MIR10
絞り:開口絞り
像:結像面
対象物:対象物面
鏡1:鏡MIR1
鏡2:鏡MIR2
鏡3:鏡MIR3
鏡4:鏡MIR4
鏡5:鏡MIR5
鏡6:鏡MIR6
鏡7:鏡MIR7
鏡8:鏡MIR8
鏡9:鏡MIR9
鏡10:鏡MIR10
絞り:開口絞り
像:結像面
対象物:対象物面
鏡1:鏡MIR1
鏡2:鏡MIR2
鏡3:鏡MIR3
鏡4:鏡MIR4
鏡5:鏡MIR5
鏡6:鏡MIR6
鏡7:鏡MIR7
鏡8:鏡MIR8
鏡9:鏡MIR9
鏡10:鏡MIR10
絞り:開口絞り
像:結像面
対象物:対象物面
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S3
鏡4:鏡S4
鏡5:鏡S5
鏡6:鏡S6
鏡7:凸面鏡SK1
鏡8:凹面鏡SK2
絞り:開口絞り
鏡1:鏡S1
鏡2:鏡S2
鏡3:鏡S3
鏡4:鏡S4
鏡5:鏡S5
鏡6:鏡S6
鏡7:凸面鏡SK1
鏡8:凹面鏡SK2
絞り:開口絞り
200 第2部分対物光学系
300 第3部分対物光学系
2100 マイクロリソグラフィー投影露光装置
2101 投影対物光学系
2102 結像面
2103 対象物面
2105 光軸
2110 光源
2120 照明システム
2130 支持構造部(作業面)
2140 マスク
2150 基板
2152 光線束
2400 開口部を有さない部分対物光学系
2450 開口部を有さない部分対物光学系
2500 開口部を有する部分対物光学系
2550 開口部を有する部分対物光学系
2912 鏡上に位置する遮光絞り
2926 鏡の間に位置する遮光絞り
2930 鏡の間に位置する遮光絞り
2700 リングフィールド
2705 フィールド中心点
10000 第1部分対物光学系(第1小対物光学系)
20000 第2部分対物光学系(第2小対物光学系)
29000 第1小対物光学系
29010 第2小対物光学系
8100 第1部分対物光学系
8200 第2部分対物光学系
Claims (13)
- 対象物面からの放射を結像面に結像するよう構成されたマイクロリソグラフィー投影対物光学系であって、
前記対象物面からの放射を前記結像面へ向かわせるよう構成された複数の要素を含み、 前記マイクロリソグラフィー投影対物光学系は反射光学系であり、
前記複数の要素には第1部分光学系と第2部分光学系が含まれ、第1部分光学系は、対象物面からの放射を中間像の面に結像するよう構成され、第2部分光学系は、前記中間像の面からの放射を結像面へ結像するよう構成され、
前記第2部分光学系は、第1凹面鏡及び第2凹面鏡を有し、前記第1凹面鏡及び前記第2凹面鏡は、放射を通過させる開口部を有し、
前記第1凹面鏡は、前記第1部分光学系からの光を受けるよう構成され、前記第2凹面鏡は前記第1凹面鏡からの放射を受けるよう構成され、前記結像面は前記第2凹面鏡からの光を受けるようにされ、前記第1部分光学系はいずれも、開口部を含まないことを特徴とするマイクロリソグラフィー投影対物光学系。 - 前記第1凹面鏡は、前記結像面まで光学軸に沿った距離を有し、その距離は12mmよりも大きい、請求項1に記載のマイクロリソグラフィー投影対物光学系。
- 前記距離は15mmよりも大きい、請求項2に記載のマイクロリソグラフィー投影対物光学系。
- 前記マイクロリソグラフィー投影対物光学系は光学軸を有し、前記第1凹面鏡及び前記第2凹面鏡の少なくとも1つが前記光学軸に対し回転対称である、請求項1乃至3のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 第1部分光学系の数は6個以下である、請求項1乃至4のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 前記6個の要素は、第1鏡、第2鏡、第3鏡、第4鏡、第5鏡、第6鏡であり、これらが対象物面から結像面への放射の経路に順に配置されている、請求項5に記載のマイクロリソグラフィー投影対物光学系。
- 前記第1鏡、第2鏡、第3鏡、第4鏡、第5鏡、第6鏡は、
凹面鏡−凹面鏡−凸面鏡−凹面鏡−凸面鏡−凹面鏡
という順列で配置されている、請求項6に記載のマイクロリソグラフィー投影対物光学系。 - 前記第1鏡、第2鏡、第3鏡、第4鏡、第5鏡、第6鏡は、
凹面鏡−凸面鏡−凹面鏡−凸面鏡−凸面鏡−凹面鏡
という順列で配置されている、請求項6に記載のマイクロリソグラフィー投影対物光学系。 - 前記第2鏡上又はその近傍に開口絞りが配置されている、請求項6乃至8のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 前記第1鏡上又はその近傍に開口絞りが配置されている、請求項6乃至8のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 第1凹面鏡と第2凹面鏡の間に開口絞りが配置されている、請求項1乃至8のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 主光線が前記対象物面のフィールドの中間フィールド点に入射する入射角が、すべての要素において24°よりも小さい、請求項1乃至11のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
- 前記放射の波長λは、30nmよりも小さい、請求項1乃至12のうちいずれか一項に記載のマイクロリソグラフィー投影対物光学系。
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US66503605P | 2005-03-24 | 2005-03-24 | |
US60/665,036 | 2005-03-24 | ||
US69545505P | 2005-06-30 | 2005-06-30 | |
US60/695,455 | 2005-06-30 | ||
US69890905P | 2005-07-13 | 2005-07-13 | |
US60/698,909 | 2005-07-13 | ||
DE102005042005.2 | 2005-09-05 | ||
DE102005042005A DE102005042005A1 (de) | 2004-12-23 | 2005-09-05 | Hochaperturiges Objektiv mit obskurierter Pupille |
PCT/EP2005/013841 WO2006069725A1 (de) | 2004-12-23 | 2005-12-22 | Hochaperturiges objektiv mit obskurierter pupille |
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JP2012054126A Active JP5996892B2 (ja) | 2004-12-23 | 2012-03-12 | 遮光瞳を有する高開口率対物光学系 |
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Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7884998B2 (en) * | 2003-02-21 | 2011-02-08 | Kla - Tencor Corporation | Catadioptric microscope objective employing immersion liquid for use in broad band microscopy |
TWI451125B (zh) | 2005-09-13 | 2014-09-01 | Zeiss Carl Smt Gmbh | 顯微蝕刻投影光學系統、包含此一光學系統之顯微蝕刻工具、使用此一顯微蝕刻工具於顯微蝕刻生產微結構元件之方法、藉此一方法所生產之微結構元件以及於此一光學系統中設計一光學表面的方法 |
DE102006014380A1 (de) * | 2006-03-27 | 2007-10-11 | Carl Zeiss Smt Ag | Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille |
WO2007115597A1 (en) | 2006-04-07 | 2007-10-18 | Carl Zeiss Smt Ag | Microlithography projection optical system, tool and method of production |
DE102006047387A1 (de) * | 2006-10-06 | 2008-04-10 | Carl Zeiss Smt Ag | Kompaktes 3-Spiegel-Objektiv |
EP1950594A1 (de) | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
US7929114B2 (en) | 2007-01-17 | 2011-04-19 | Carl Zeiss Smt Gmbh | Projection optics for microlithography |
WO2009036975A1 (en) * | 2007-09-21 | 2009-03-26 | Carl Zeiss Smt Ag | Projection objective with obscurated pupil for microlithography |
DE102007045396A1 (de) | 2007-09-21 | 2009-04-23 | Carl Zeiss Smt Ag | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
DE102007051671A1 (de) | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
JP5337159B2 (ja) | 2007-10-26 | 2013-11-06 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこれを有する投影露光装置 |
KR101645142B1 (ko) | 2007-10-26 | 2016-08-02 | 칼 짜이스 에스엠티 게엠베하 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 |
DE102008017645A1 (de) | 2008-04-04 | 2009-10-08 | Carl Zeiss Smt Ag | Vorrichtung zur mikrolithographischen Projektionsbelichtung sowie Vorrichtung zur Inspektion einer Oberfläche eines Substrats |
JP5489034B2 (ja) * | 2008-08-28 | 2014-05-14 | 国立大学法人東北大学 | 反射型投影光学装置 |
DE102008046699B4 (de) | 2008-09-10 | 2014-03-13 | Carl Zeiss Smt Gmbh | Abbildende Optik |
JP5810467B2 (ja) * | 2009-03-06 | 2015-11-11 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及び該結像光学系を有するマイクロリソグラフィ用の投影露光装置 |
CN102449526B (zh) | 2009-03-30 | 2014-05-07 | 卡尔蔡司Smt有限责任公司 | 成像光学部件以及具有此类型的成像光学部件的用于微光刻的投射曝光设备 |
JP5748748B2 (ja) | 2009-06-19 | 2015-07-15 | ケーエルエー−テンカー・コーポレーションKla−Tencor Corporation | 極紫外線検査システム |
DE102009030501A1 (de) | 2009-06-24 | 2011-01-05 | Carl Zeiss Smt Ag | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes |
DE102009035582A1 (de) | 2009-07-29 | 2011-02-03 | Carl Zeiss Sms Gmbh | Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
DE102009035583A1 (de) | 2009-07-29 | 2011-02-03 | Carl Zeiss Sms Gmbh | Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
WO2011020690A2 (en) | 2009-08-07 | 2011-02-24 | Carl Zeiss Smt Gmbh | Method for producing a mirror having at least two mirror surfaces, mirror of a projection exposure apparatus for microlithography, and projection exposure apparatus |
DE102009049640B4 (de) | 2009-10-15 | 2012-05-31 | Carl Zeiss Smt Gmbh | Projektionsobjektiv für eine mikrolithographische EUV-Projektionsbelichtungsanlage |
DE102009046685A1 (de) * | 2009-11-13 | 2011-05-26 | Carl Zeiss Smt Gmbh | Abbildende Optik |
DE102010039745A1 (de) | 2010-08-25 | 2012-03-01 | Carl Zeiss Smt Gmbh | Abbildende Optik |
DE102010040108A1 (de) | 2010-09-01 | 2012-03-01 | Carl Zeiss Smt Gmbh | Obskurationsblende |
US9075322B2 (en) * | 2010-09-10 | 2015-07-07 | Nikon Corporation | Reflective imaging optical system, exposure apparatus, and method for producing device |
DE102010041746A1 (de) * | 2010-09-30 | 2012-04-05 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage der EUV-Mikrolithographie und Verfahren zur mikrolithographischen Belichtung |
US8837041B2 (en) | 2010-11-23 | 2014-09-16 | Carl Zeiss Smt Gmbh | Magnifying imaging optical system and metrology system with an imaging optical system of this type |
DE102011084255A1 (de) | 2010-11-24 | 2012-05-24 | Carl Zeiss Smt Gmbh | Vergrößernde abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
DE102011003302A1 (de) | 2011-01-28 | 2012-08-02 | Carl Zeiss Smt Gmbh | Vergrößerte abbildende Optik sowie Metrologiesystem mit einer derartigen abbildenden Optik |
DE102011006468B4 (de) | 2011-03-31 | 2014-08-28 | Carl Zeiss Smt Gmbh | Vermessung eines abbildenden optischen Systems durch Überlagerung von Mustern |
JP6116128B2 (ja) | 2011-04-11 | 2017-04-19 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置および方法 |
DE102013213842A1 (de) | 2013-07-16 | 2015-01-22 | Carl Zeiss Smt Gmbh | Optisches Bauelement |
DE102015226531A1 (de) * | 2015-04-14 | 2016-10-20 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
WO2016188934A1 (de) | 2015-05-28 | 2016-12-01 | Carl Zeiss Smt Gmbh | Abbildende optik zur abbildung eines objektfeldes in ein bildfeld sowie projektionsbelichtungsanlage mit einer derartigen abbildenden optik |
DE102015215948A1 (de) | 2015-08-20 | 2015-10-15 | Carl Zeiss Smt Gmbh | Obskurationsvorrichtung |
WO2017029383A1 (de) | 2015-08-20 | 2017-02-23 | Carl Zeiss Smt Gmbh | Euv-lithographieanlage und verfahren |
DE102015219671A1 (de) | 2015-10-12 | 2017-04-27 | Carl Zeiss Smt Gmbh | Optische Baugruppe, Projektionssystem, Metrologiesystem und EUV-Lithographieanlage |
DE102015221983A1 (de) * | 2015-11-09 | 2017-05-11 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
DE102017216458A1 (de) * | 2017-09-18 | 2019-03-21 | Carl Zeiss Smt Gmbh | Verfahren zur Herstellung eines Spiegels als optischer Komponente für ein optisches System einer Projektionsbelichtungsanlage für die Projektionslithographie |
DE102019117964A1 (de) | 2019-07-03 | 2020-07-23 | Asml Netherlands B.V. | Lithographieanlage mit einer Überwachungseinrichtung für ein Pellikel |
EP3928683A1 (en) * | 2020-06-24 | 2021-12-29 | Carl Zeiss Vision International GmbH | Device and method for determining at least one ocular aberration |
DE102020208007A1 (de) | 2020-06-29 | 2021-12-30 | Carl Zeiss Smt Gmbh | Optisches System mit einer Aperturblende |
DE102020211663A1 (de) | 2020-09-17 | 2022-03-17 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere Lithographiesystem |
CN114371548B (zh) * | 2021-12-28 | 2023-03-21 | 中国科学院长春光学精密机械与物理研究所 | 一种二维大视场成像平面对称自由曲面光学*** |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3343868A1 (de) * | 1983-12-03 | 1985-06-13 | Zeiss Carl Fa | Objektiv mit kegelschnittflaechen fuer die mikrozonenabbildung |
GB2197962A (en) * | 1986-11-10 | 1988-06-02 | Compact Spindle Bearing Corp | Catoptric reduction imaging apparatus |
US5003567A (en) * | 1989-02-09 | 1991-03-26 | Hawryluk Andrew M | Soft x-ray reduction camera for submicron lithography |
US5212588A (en) * | 1991-04-09 | 1993-05-18 | The United States Of America As Represented By The United States Department Of Energy | Reflective optical imaging system for extreme ultraviolet wavelengths |
DE4327656A1 (de) * | 1993-08-17 | 1995-02-23 | Steinheil Optronik Gmbh | Infrarot-Objektiv |
US5686728A (en) * | 1996-05-01 | 1997-11-11 | Lucent Technologies Inc | Projection lithography system and method using all-reflective optical elements |
US6396067B1 (en) * | 1998-05-06 | 2002-05-28 | Koninklijke Philips Electronics N.V. | Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system |
WO2002048796A2 (en) * | 2000-12-12 | 2002-06-20 | Carl Zeiss Smt Ag | Projection system for euv lithography |
JP2001185480A (ja) * | 1999-10-15 | 2001-07-06 | Nikon Corp | 投影光学系及び該光学系を備える投影露光装置 |
EP1093021A3 (en) * | 1999-10-15 | 2004-06-30 | Nikon Corporation | Projection optical system as well as equipment and methods making use of said system |
US6621557B2 (en) * | 2000-01-13 | 2003-09-16 | Nikon Corporation | Projection exposure apparatus and exposure methods |
DE10052289A1 (de) * | 2000-10-20 | 2002-04-25 | Zeiss Carl | 8-Spiegel-Mikrolithographie-Projektionsobjektiv |
DE10139177A1 (de) * | 2001-08-16 | 2003-02-27 | Zeiss Carl | Objektiv mit Pupillenobskuration |
JP2003114387A (ja) * | 2001-10-04 | 2003-04-18 | Nikon Corp | 反射屈折光学系および該光学系を備える投影露光装置 |
JP2004138926A (ja) * | 2002-10-21 | 2004-05-13 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
JP2004252358A (ja) * | 2003-02-21 | 2004-09-09 | Canon Inc | 反射型投影光学系及び露光装置 |
JP2004258178A (ja) * | 2003-02-25 | 2004-09-16 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
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JP2008525831A (ja) | 2008-07-17 |
EP1828829B1 (de) | 2012-08-22 |
JP5996892B2 (ja) | 2016-09-21 |
KR20070084117A (ko) | 2007-08-24 |
KR101148589B1 (ko) | 2012-05-22 |
JP2014123131A (ja) | 2014-07-03 |
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