JP5269301B2 - 弾性表面波装置 - Google Patents
弾性表面波装置 Download PDFInfo
- Publication number
- JP5269301B2 JP5269301B2 JP2006199321A JP2006199321A JP5269301B2 JP 5269301 B2 JP5269301 B2 JP 5269301B2 JP 2006199321 A JP2006199321 A JP 2006199321A JP 2006199321 A JP2006199321 A JP 2006199321A JP 5269301 B2 JP5269301 B2 JP 5269301B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- acoustic wave
- surface acoustic
- wave device
- castellation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2 バンプ
5 リッド(蓋)
20 第2の基板
11,21 外部端子
12 キャスタレーション
22,31 パッド
23 電解メッキ配線層
24 接着層
30 櫛型電極
Claims (1)
- 所定大きさの一つの圧電基板からなるウェハー状に形成される複数の弾性表面波素子の領域の各々に対応して, 弾性表面波がその間を伝搬する櫛型電極とパッド電極を形成し,
前記パッド電極に対応する位置に接着層を形成し,
一つの弾性表面波素子の領域のサイズより小さいサイズを有し,外部端子と前記外部端子と接続する側面に形成されたキャスタレーションを備えた基板を前記複数の弾性表面波素子の領域のそれぞれに載置し,
前記基板を一定加熱温度で前記圧電基板に押し当て,前記接着層で,前記圧電基板と,前記基板とを接着し,
前記基板の外に伸びている前記圧電基板のパッド電極に電解メッキ法により前記キャスタレーションに達するメッキ層を成長して, 前記圧電基板のパッド電極と前記基板のキャスタレーションとを接続し,
次いで,前記ウェハー状に形成された前記複数の弾性表面波素子の領域をダイシングにより切断分離して,個別の弾性表面波装置を得る,
ことを特徴とする弾性表面波装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006199321A JP5269301B2 (ja) | 2006-07-21 | 2006-07-21 | 弾性表面波装置 |
EP07111697A EP1881603A3 (en) | 2006-07-21 | 2007-07-04 | Surface acoustic wave device |
US11/822,916 US8022594B2 (en) | 2006-07-21 | 2007-07-11 | Surface acoustic wave device |
CN2007101361967A CN101110579B (zh) | 2006-07-21 | 2007-07-20 | 表面声波器件及其制造方法 |
KR1020070072662A KR100885351B1 (ko) | 2006-07-21 | 2007-07-20 | 탄성 표면파 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006199321A JP5269301B2 (ja) | 2006-07-21 | 2006-07-21 | 弾性表面波装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013067466A Division JP2013138511A (ja) | 2013-03-27 | 2013-03-27 | 弾性波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008028713A JP2008028713A (ja) | 2008-02-07 |
JP5269301B2 true JP5269301B2 (ja) | 2013-08-21 |
Family
ID=38564552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006199321A Expired - Fee Related JP5269301B2 (ja) | 2006-07-21 | 2006-07-21 | 弾性表面波装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8022594B2 (ja) |
EP (1) | EP1881603A3 (ja) |
JP (1) | JP5269301B2 (ja) |
KR (1) | KR100885351B1 (ja) |
CN (1) | CN101110579B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012175492A (ja) * | 2011-02-23 | 2012-09-10 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
KR101931508B1 (ko) * | 2015-03-27 | 2018-12-21 | 가부시키가이샤 무라타 세이사쿠쇼 | 탄성파 장치, 통신 모듈 기기 및 탄성파 장치의 제조 방법 |
CN105810590A (zh) * | 2016-03-18 | 2016-07-27 | 中国电子科技集团公司第二十六研究所 | 声表面波滤波器晶圆键合封装工艺 |
KR20180055369A (ko) * | 2016-11-17 | 2018-05-25 | (주)와이솔 | 표면탄성파 소자 패키지 및 그 제작 방법 |
CN110249525B (zh) | 2017-02-03 | 2023-02-21 | 株式会社村田制作所 | 声表面波装置 |
CN110082868A (zh) * | 2018-01-25 | 2019-08-02 | 苏州旭创科技有限公司 | 光收发组件及具有其的光模块 |
TWI690156B (zh) * | 2019-07-10 | 2020-04-01 | 頎邦科技股份有限公司 | 表面聲波裝置及其製造方法 |
CN111030626A (zh) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | 声波器件的制作方法及声波器件 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197909A (ja) * | 1982-05-13 | 1983-11-17 | Murata Mfg Co Ltd | チツプ状圧電振動部品の実装構造 |
JPH06204293A (ja) | 1992-12-28 | 1994-07-22 | Rohm Co Ltd | 半導体装置 |
JP3123477B2 (ja) | 1997-08-08 | 2001-01-09 | 日本電気株式会社 | 表面弾性波素子の実装構造および実装方法 |
US6388545B1 (en) * | 1998-05-29 | 2002-05-14 | Fujitsu Limited | Surface-acoustic-wave filter having an improved suppression outside a pass-band |
FR2786959B1 (fr) * | 1998-12-08 | 2001-05-11 | Thomson Csf | Composant a ondes de surface encapsule et procede de fabrication collective |
JP3736226B2 (ja) * | 1999-09-17 | 2006-01-18 | セイコーエプソン株式会社 | Sawデバイス |
JP2001094388A (ja) * | 1999-09-17 | 2001-04-06 | Seiko Epson Corp | Sawデバイス及びその製造方法 |
JP2001094390A (ja) * | 1999-09-20 | 2001-04-06 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
JP3520414B2 (ja) * | 2001-04-10 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法、通信装置 |
JP2003297982A (ja) * | 2002-04-01 | 2003-10-17 | Nec Compound Semiconductor Devices Ltd | 高周波電子デバイスとその製造方法 |
JP2004297693A (ja) * | 2003-03-28 | 2004-10-21 | Fujitsu Media Device Kk | 弾性表面波デバイスの製造方法及び弾性表面波デバイス |
JP3963862B2 (ja) * | 2003-05-20 | 2007-08-22 | 富士通メディアデバイス株式会社 | 弾性表面波フィルタ及びそれを有する分波器 |
CN1784829A (zh) * | 2003-05-29 | 2006-06-07 | 东洋通信机株式会社 | 压电器件 |
JP2004364041A (ja) * | 2003-06-05 | 2004-12-24 | Fujitsu Media Device Kk | 弾性表面波デバイス及びその製造方法 |
JP4180982B2 (ja) * | 2003-06-16 | 2008-11-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス、そのパッケージ及びその製造方法 |
JP4180985B2 (ja) * | 2003-07-07 | 2008-11-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
JP2005057447A (ja) * | 2003-08-01 | 2005-03-03 | Fujitsu Media Device Kk | 弾性表面波デバイス |
JP2005203889A (ja) | 2004-01-13 | 2005-07-28 | Fujitsu Media Device Kk | 弾性表面波デバイス |
JP2006197554A (ja) * | 2004-12-17 | 2006-07-27 | Seiko Epson Corp | 弾性表面波デバイス及びその製造方法、icカード、携帯用電子機器 |
-
2006
- 2006-07-21 JP JP2006199321A patent/JP5269301B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-04 EP EP07111697A patent/EP1881603A3/en not_active Withdrawn
- 2007-07-11 US US11/822,916 patent/US8022594B2/en active Active
- 2007-07-20 KR KR1020070072662A patent/KR100885351B1/ko not_active IP Right Cessation
- 2007-07-20 CN CN2007101361967A patent/CN101110579B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8022594B2 (en) | 2011-09-20 |
KR20080008994A (ko) | 2008-01-24 |
CN101110579B (zh) | 2010-08-18 |
EP1881603A3 (en) | 2013-01-02 |
EP1881603A2 (en) | 2008-01-23 |
JP2008028713A (ja) | 2008-02-07 |
KR100885351B1 (ko) | 2009-02-26 |
US20080018415A1 (en) | 2008-01-24 |
CN101110579A (zh) | 2008-01-23 |
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