CN101110579B - 表面声波器件及其制造方法 - Google Patents
表面声波器件及其制造方法 Download PDFInfo
- Publication number
- CN101110579B CN101110579B CN2007101361967A CN200710136196A CN101110579B CN 101110579 B CN101110579 B CN 101110579B CN 2007101361967 A CN2007101361967 A CN 2007101361967A CN 200710136196 A CN200710136196 A CN 200710136196A CN 101110579 B CN101110579 B CN 101110579B
- Authority
- CN
- China
- Prior art keywords
- substrate
- acoustic wave
- surface acoustic
- electrode pad
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006199321A JP5269301B2 (ja) | 2006-07-21 | 2006-07-21 | 弾性表面波装置 |
JP2006199321 | 2006-07-21 | ||
JP2006-199321 | 2006-07-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101110579A CN101110579A (zh) | 2008-01-23 |
CN101110579B true CN101110579B (zh) | 2010-08-18 |
Family
ID=38564552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101361967A Expired - Fee Related CN101110579B (zh) | 2006-07-21 | 2007-07-20 | 表面声波器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8022594B2 (zh) |
EP (1) | EP1881603A3 (zh) |
JP (1) | JP5269301B2 (zh) |
KR (1) | KR100885351B1 (zh) |
CN (1) | CN101110579B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012175492A (ja) * | 2011-02-23 | 2012-09-10 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
JP6521059B2 (ja) * | 2015-03-27 | 2019-05-29 | 株式会社村田製作所 | 弾性波装置、通信モジュール機器及び弾性波装置の製造方法 |
CN105810590A (zh) * | 2016-03-18 | 2016-07-27 | 中国电子科技集团公司第二十六研究所 | 声表面波滤波器晶圆键合封装工艺 |
KR20180055369A (ko) * | 2016-11-17 | 2018-05-25 | (주)와이솔 | 표면탄성파 소자 패키지 및 그 제작 방법 |
WO2018143045A1 (ja) * | 2017-02-03 | 2018-08-09 | 株式会社村田製作所 | 弾性表面波装置 |
CN110082868A (zh) * | 2018-01-25 | 2019-08-02 | 苏州旭创科技有限公司 | 光收发组件及具有其的光模块 |
TWI690156B (zh) * | 2019-07-10 | 2020-04-01 | 頎邦科技股份有限公司 | 表面聲波裝置及其製造方法 |
CN111030626A (zh) * | 2019-12-31 | 2020-04-17 | 武汉衍熙微器件有限公司 | 声波器件的制作方法及声波器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003297982A (ja) * | 2002-04-01 | 2003-10-17 | Nec Compound Semiconductor Devices Ltd | 高周波電子デバイスとその製造方法 |
CN1534868A (zh) * | 2003-03-28 | 2004-10-06 | 富士通媒体部品株式会社 | 表面声波器件及其制造方法 |
CN1784829A (zh) * | 2003-05-29 | 2006-06-07 | 东洋通信机株式会社 | 压电器件 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197909A (ja) * | 1982-05-13 | 1983-11-17 | Murata Mfg Co Ltd | チツプ状圧電振動部品の実装構造 |
JPH06204293A (ja) | 1992-12-28 | 1994-07-22 | Rohm Co Ltd | 半導体装置 |
JP3123477B2 (ja) | 1997-08-08 | 2001-01-09 | 日本電気株式会社 | 表面弾性波素子の実装構造および実装方法 |
EP0961404B1 (en) * | 1998-05-29 | 2008-07-02 | Fujitsu Limited | Surface-acoustic-wave filter having an improved suppression outside a pass-band |
FR2786959B1 (fr) * | 1998-12-08 | 2001-05-11 | Thomson Csf | Composant a ondes de surface encapsule et procede de fabrication collective |
JP2001094388A (ja) * | 1999-09-17 | 2001-04-06 | Seiko Epson Corp | Sawデバイス及びその製造方法 |
JP3736226B2 (ja) * | 1999-09-17 | 2006-01-18 | セイコーエプソン株式会社 | Sawデバイス |
JP2001094390A (ja) * | 1999-09-20 | 2001-04-06 | Toshiba Corp | 弾性表面波デバイスおよびその製造方法 |
JP3520414B2 (ja) * | 2001-04-10 | 2004-04-19 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法、通信装置 |
JP3963862B2 (ja) * | 2003-05-20 | 2007-08-22 | 富士通メディアデバイス株式会社 | 弾性表面波フィルタ及びそれを有する分波器 |
JP2004364041A (ja) * | 2003-06-05 | 2004-12-24 | Fujitsu Media Device Kk | 弾性表面波デバイス及びその製造方法 |
JP4180982B2 (ja) * | 2003-06-16 | 2008-11-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス、そのパッケージ及びその製造方法 |
JP4180985B2 (ja) * | 2003-07-07 | 2008-11-12 | 富士通メディアデバイス株式会社 | 弾性表面波デバイス及びその製造方法 |
JP2005057447A (ja) * | 2003-08-01 | 2005-03-03 | Fujitsu Media Device Kk | 弾性表面波デバイス |
JP2005203889A (ja) | 2004-01-13 | 2005-07-28 | Fujitsu Media Device Kk | 弾性表面波デバイス |
JP2006197554A (ja) * | 2004-12-17 | 2006-07-27 | Seiko Epson Corp | 弾性表面波デバイス及びその製造方法、icカード、携帯用電子機器 |
-
2006
- 2006-07-21 JP JP2006199321A patent/JP5269301B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-04 EP EP07111697A patent/EP1881603A3/en not_active Withdrawn
- 2007-07-11 US US11/822,916 patent/US8022594B2/en active Active
- 2007-07-20 CN CN2007101361967A patent/CN101110579B/zh not_active Expired - Fee Related
- 2007-07-20 KR KR1020070072662A patent/KR100885351B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003297982A (ja) * | 2002-04-01 | 2003-10-17 | Nec Compound Semiconductor Devices Ltd | 高周波電子デバイスとその製造方法 |
CN1534868A (zh) * | 2003-03-28 | 2004-10-06 | 富士通媒体部品株式会社 | 表面声波器件及其制造方法 |
CN1784829A (zh) * | 2003-05-29 | 2006-06-07 | 东洋通信机株式会社 | 压电器件 |
Also Published As
Publication number | Publication date |
---|---|
US8022594B2 (en) | 2011-09-20 |
EP1881603A2 (en) | 2008-01-23 |
KR20080008994A (ko) | 2008-01-24 |
JP5269301B2 (ja) | 2013-08-21 |
JP2008028713A (ja) | 2008-02-07 |
CN101110579A (zh) | 2008-01-23 |
EP1881603A3 (en) | 2013-01-02 |
KR100885351B1 (ko) | 2009-02-26 |
US20080018415A1 (en) | 2008-01-24 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TAIYO YUDEN CO., LTD. Free format text: FORMER OWNER: FUJITSU MEDIA DEVICES LTD Effective date: 20101202 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KANAGAWA PREFECTURE, JAPAN TO: TOKYO, JAPAN |
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TR01 | Transfer of patent right |
Effective date of registration: 20101202 Address after: Tokyo, Japan, Japan Patentee after: Taiyo Yuden Co., Ltd. Address before: Kanagawa Patentee before: Fujitsu Media Devices Ltd |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100818 Termination date: 20150720 |
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EXPY | Termination of patent right or utility model |