JP5248902B2 - 基板処理方法 - Google Patents
基板処理方法 Download PDFInfo
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- JP5248902B2 JP5248902B2 JP2008105784A JP2008105784A JP5248902B2 JP 5248902 B2 JP5248902 B2 JP 5248902B2 JP 2008105784 A JP2008105784 A JP 2008105784A JP 2008105784 A JP2008105784 A JP 2008105784A JP 5248902 B2 JP5248902 B2 JP 5248902B2
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- 239000000758 substrate Substances 0.000 title claims description 131
- 238000003672 processing method Methods 0.000 title claims description 63
- 238000012545 processing Methods 0.000 claims description 126
- 229920002120 photoresistant polymer Polymers 0.000 claims description 87
- 238000005530 etching Methods 0.000 claims description 85
- 150000002500 ions Chemical class 0.000 claims description 41
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 40
- 238000004380 ashing Methods 0.000 claims description 29
- 230000006870 function Effects 0.000 claims description 18
- 239000002952 polymeric resin Substances 0.000 claims description 7
- 229920003002 synthetic resin Polymers 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 216
- 238000000034 method Methods 0.000 description 146
- 239000010410 layer Substances 0.000 description 125
- 235000012431 wafers Nutrition 0.000 description 87
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 67
- 229910052581 Si3N4 Inorganic materials 0.000 description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 39
- 239000010703 silicon Substances 0.000 description 39
- 238000012546 transfer Methods 0.000 description 25
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000000151 deposition Methods 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 17
- 230000008021 deposition Effects 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 239000002585 base Substances 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000011247 coating layer Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001314 profilometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Description
SiO2+4HF → SiF4+2H2O↑
SiF4+2NH3+2HF → (NH4)2SiF6
(NH4)2SiF6 → SiF4↑+2NH3↑+2HF↑
12,13,14 プロセスモジュール
51,90 TEOS膜
52 TiN膜
53,61,67,78,92 反射防止膜
54,62,68,79,93 フォトレジスト膜
55,63,70,71,80,82,83,85〜87,94,97〜100 開口部
81 デポ
65,88 シリコン基材
66 熱酸化珪素膜
69,84,96 有機系膜
74 第2のポリシリコン層
75 第1の窒化珪素膜
76 第2のTEOS膜
77 第2の窒化珪素膜
89 窒化珪素膜
91 カーボン膜
95 MLD酸化膜
Claims (4)
- 少なくとも絶縁膜、TiN導電膜からなる処理対象層、高分子樹脂からなる反射防止膜としての中間層、フォトレジスト膜からなるマスク層が順に積層され、且つ前記マスク層には前記中間層の一部を露出させる開口部を有するパターンが形成されている基板をチャンバ内の下部電極として機能する載置台に載置し、前記載置台と前記載置台の上方に配置されたシャワーヘッドとの間に電圧を印加することによって発生するプラズマを用いて前記基板へプラズマ処理を施す基板処理方法であって、
前記チャンバ内圧力を減圧し、チャンバ内に処理ガスとしてのCHF 3 ガス及びHBrガスを前記シャワーヘッドから供給し、その際、CHF 3 ガスの流量を100〜300sccmとし、HBrガスの流量を300sccm以下とし、
前記載置台に前記プラズマ中のイオンを引き込むための高周波電力を供給すると共に、前記シャワーヘッドに高周波電力を供給することで前記処理ガスをプラズマ化し、前記露出した中間層を前記処理対象層の一部を露出させるまでエッチングして前記中間層のエッチング終点を検出し、前記エッチング終点の検出後において前記基板をプラズマに曝す時間を制御することで前記被処理対象層が露出している開口の幅を調整し、
その後、Cl 2 ガス及びN 2 ガスを供給して該ガスをプラズマ化し、前記露出した処理対象層を前記下地層が露出するまでエッチングするエッチングステップと、
前記処理対象層に積層されている中間層、マスク層、及び堆積しているデポをアッシングするアッシングステップとを有することを特徴とする基板処理方法。 - 前記HBrガスから生じたプラズマは、前記開口部の側面に生じる荒れを防止することを特徴とする請求項1記載の基板処理方法。
- 少なくとも絶縁膜からなる下地層、TiN導電膜からなる処理対象層、高分子樹脂からなる反射防止膜としての第1の中間層、フォトレジスト膜からなる第1のマスク層が順に積層され、且つ前記第1のマスク層には前記中間層の一部を露出させる開口部を有するパターンが形成されている基板をチャンバ内の下部電極として機能する載置台に載置し、前記載置台と前記載置台の上方に配置されたシャワーヘッドとの間に電圧を印加することによって発生するプラズマを用いて前記基板へプラズマ処理を施す基板処理方法であって、
前記チャンバ内圧力を減圧し、チャンバ内に処理ガスとしてのCHF 3 ガス及びHBrガスを前記シャワーヘッドから供給し、その際、CHF 3 ガスの流量を100〜300sccmとし、HBrガスの流量を300sccm以下とし、
前記載置台に前記プラズマ中のイオンを引き込むための高周波電力を供給すると共に、前記シャワーヘッドに高周波電力を供給することで前記処理ガスをプラズマ化し、前記露出した第1の中間層を前記処理対象層の一部を露出させるまでエッチングして前記第1の中間層のエッチング終点を検出し、前記エッチング終点の検出後において前記基板をプラズマに曝す時間を制御することで前記被処理対象層の一部が露出している開口の幅を調整し、
その後、Cl 2 ガス及びN 2 ガスを供給して該ガスをプラズマ化し、前記一部が露出した処理対象層をエッチングして前記下地層の一部を露出させる第2の開口部を形成する第1のエッチングステップと、
前記処理対象層に積層されている第1の中間層、第1のマスク層、及び堆積しているデポをアッシングするアッシングステップと、
前記基板へ、高分子樹脂からなる反射防止膜としての第2の中間層、及び該第2の中間層の一部を前記第2の開口部の上以外で露出させる第3の開口部を有するフォトレジスト膜からなる第2のマスク層を順に積層する積層ステップと、
前記処理ガスを用い、前記載置台に高周波電力を供給して前記処理ガスをプラズマ化し、前記露出した第2の中間層を前記処理対象層の他の一部を露出させるまでエッチングして前記第2の中間層のエッチング終点を検出し、併せて前記基板をプラズマに曝す時間を制御することで前記被処理層の他の一部が露出している開口の幅を調整し、
その後、Cl 2 ガス及びN 2 ガスを供給して該ガスをプラズマ化し、前記他の一部が露出した処理対象層をエッチングする第2のエッチングステップとを有することを特徴とする基板処理方法。 - 前記HBrガスから生じたプラズマは、前記開口部の側面に生じる荒れを防止することを特徴とする請求項3記載の基板処理方法。
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