JP5170101B2 - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- 239000003990 capacitor Substances 0.000 claims description 125
- 239000011229 interlayer Substances 0.000 claims description 106
- 239000001257 hydrogen Substances 0.000 claims description 90
- 229910052739 hydrogen Inorganic materials 0.000 claims description 90
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 85
- 230000001681 protective effect Effects 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 69
- 230000004888 barrier function Effects 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000010408 film Substances 0.000 description 739
- 229910052751 metal Inorganic materials 0.000 description 91
- 239000002184 metal Substances 0.000 description 91
- 238000000137 annealing Methods 0.000 description 47
- 239000012298 atmosphere Substances 0.000 description 47
- 239000007789 gas Substances 0.000 description 47
- 229910052760 oxygen Inorganic materials 0.000 description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 42
- 239000010703 silicon Substances 0.000 description 42
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 41
- 239000001301 oxygen Substances 0.000 description 41
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 229910052814 silicon oxide Inorganic materials 0.000 description 32
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 29
- 229910052721 tungsten Inorganic materials 0.000 description 28
- 239000010937 tungsten Substances 0.000 description 28
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 27
- 238000005229 chemical vapour deposition Methods 0.000 description 23
- 239000003292 glue Substances 0.000 description 22
- 239000012535 impurity Substances 0.000 description 20
- 238000009832 plasma treatment Methods 0.000 description 17
- 238000011084 recovery Methods 0.000 description 17
- 230000010287 polarization Effects 0.000 description 16
- 239000010936 titanium Substances 0.000 description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 15
- 238000000576 coating method Methods 0.000 description 15
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 14
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 13
- 239000010410 layer Substances 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910000457 iridium oxide Inorganic materials 0.000 description 12
- 239000004642 Polyimide Substances 0.000 description 11
- 238000011835 investigation Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 229930195733 hydrocarbon Natural products 0.000 description 10
- 150000002430 hydrocarbons Chemical class 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000002955 isolation Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000003963 antioxidant agent Substances 0.000 description 7
- 230000003078 antioxidant effect Effects 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- XSETZKVZGUWPFM-UHFFFAOYSA-N magnesium;oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Mg+2].[Ti+4] XSETZKVZGUWPFM-UHFFFAOYSA-N 0.000 description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 208000005156 Dehydration Diseases 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000018044 dehydration Effects 0.000 description 5
- 238000006297 dehydration reaction Methods 0.000 description 5
- 150000002431 hydrogen Chemical class 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 230000003064 anti-oxidating effect Effects 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 229910001882 dioxygen Inorganic materials 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- -1 methylsiloxane Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- BCAARMUWIRURQS-UHFFFAOYSA-N dicalcium;oxocalcium;silicate Chemical compound [Ca+2].[Ca+2].[Ca]=O.[O-][Si]([O-])([O-])[O-] BCAARMUWIRURQS-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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Description
本実施形態の説明に先立ち、本願発明者が行った調査結果について説明する。
まず、第1実施形態に係る半導体装置について、その製造工程を追いながら説明する。
本例では、保護膜64として、スパッタ法により酸化シリコン膜を形成する。酸化シリコン膜でも、第3の層間絶縁膜68の形成時に発生するプラズマから第1金属配線65aを保護することができ、第1金属配線65aを通じてキャパシタ誘電体膜48aにダメージが入るのを防止できる。
本例では、保護膜64として塗布型絶縁膜を形成する。塗布型絶縁膜はSOG(Spin On Glass)とも称される。
本例では、保護膜64としてポリイミド膜のような樹脂膜を形成する。ポリイミド膜は、感光性と非感光性の如何を問わず、保護膜64として形成し得る。
本例では、保護膜64としてスパッタ法で酸化物強誘電体膜を形成する。酸化物強誘電体膜は、水素を吸蔵する性質があるので、外部雰囲気に含まれる水素や製造時に発生する水素を吸蔵し、キャパシタ誘電体膜48aが水素によって還元して劣化してしまうのを防止して、強誘電体キャパシタQの長期信頼性の向上に寄与する。
次に、第2実施形態について説明する。
次に、図35(b)に示す断面構造を得るまでの工程について説明する。
Claims (8)
- トランジスタが形成された半導体基板と、
前記半導体基板と前記トランジスタのそれぞれの上方に形成された第1の層間絶縁膜と、
前記第1の層間絶縁膜の上に形成された強誘電体キャパシタと、
前記第1の層間絶縁膜と前記強誘電体キャパシタのそれぞれの上に形成された第2の層間絶縁膜と、
前記第2の層間絶縁膜の上に形成された配線と、
前記配線の上面に形成され、該配線の側面には形成されていない、酸化物強誘電体からなる保護膜と、
前記第2の層間絶縁膜及び前記保護膜の上に、プラズマを用いる成膜方法により形成された第3の層間絶縁膜と
を有することを特徴とする半導体装置。 - 前記保護膜の膜厚が2nm以上、10nm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記保護膜と前記第2の層間絶縁膜のそれぞれの上と、前記配線の側面とに、絶縁性水素バリア膜が形成されたことを特徴とする請求項1または2に記載の半導体装置。
- 半導体基板にトランジスタを形成する工程と、
前記半導体基板と前記トランジスタのそれぞれの上方に第1の層間絶縁膜を形成する工程と、
前記第1の層間絶縁膜の上に強誘電体キャパシタを形成する工程と、
前記第1の層間絶縁膜と前記強誘電体キャパシタのそれぞれの上に第2の層間絶縁膜を形成する工程と、
前記第2の層間絶縁膜の上に配線を形成する工程と、
前記配線の上面に形成され、該配線の側面には形成されていない、酸化物強誘電体からなる保護膜を形成する工程と、
前記第2の層間絶縁膜と前記配線と前記保護膜の上に、プラズマを用いる成膜方法により第3の層間絶縁膜を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記配線の形成は、
前記第2の層間絶縁膜の上に導電膜を形成する工程と、
前記導電膜の上に前記保護膜を形成する工程と、
前記保護膜の上にレジストパターンを形成する工程と、
前記レジストパターンをマスクにして前記導電膜と前記保護膜とをエッチングすることにより、前記導電膜を前記配線にすると供に、前記保護膜を前記配線の上面にのみ残す工程と、
前記レジストパターンを除去する工程とを有することを特徴とする請求項4に記載の半導体装置の製造方法。 - 前記保護膜は、プラズマを用いない成膜方法、又はスパッタ法により形成されることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記保護膜の膜厚を2nm以上、10nm以下とすることを特徴とする請求項4乃至6のいずれか1項に記載の半導体装置の製造方法。
- 前記保護膜と前記第2の層間絶縁膜のそれぞれの上と、前記配線の側面とに、絶縁性水素バリア膜を形成する工程を更に有することを特徴とする請求項4乃至7のいずれか1項に記載の半導体装置の製造方法。
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