JP5160496B2 - 非極性iii族窒化物層を有する多層構造及びその製造方法 - Google Patents
非極性iii族窒化物層を有する多層構造及びその製造方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims description 120
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 230000006911 nucleation Effects 0.000 claims description 126
- 238000010899 nucleation Methods 0.000 claims description 126
- 229910002601 GaN Inorganic materials 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 45
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 229910052716 thallium Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 211
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000005701 quantum confined stark effect Effects 0.000 description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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Description
11 窒化アルミニウムインジウム層
12 非極性a面{11−20}窒化ガリウム
20 基板
21 第1の核形成層
22 第2の核形成層
23 第3の核形成層
24 第4の核形成層
25 第5の核形成層
26 窒化アルミニウムガリウム層
30 非極性a面{11−20}III族窒化物層
A 標記
Claims (17)
- 非極性III族窒化物層を有する多層構造の製造方法であって、
基板を準備する工程と、
前記基板上に複数の核形成層を形成する工程と、
前記核形成層上に非極性III族窒化物層を形成する工程と、
を備え、
前記複数の核形成層がそれぞれ独立して下記式(I)で表される窒化物から選択され、
前記複数の核形成層を形成する工程が、前記基板上に第1の核形成層を1000〜1200℃の温度で、第2の核形成層を700〜900℃の温度で順に形成する工程を備え、且つ前記第1の核形成層及び第2の核形成層の材質が窒化アルミニウムであることを特徴とする非極性III族窒化物層を有する多層構造の製造方法。 - 前記第2の核形成層を形成した後、第3の核形成層を1000〜1200℃の温度で形成する工程をさらに備え、且つ前記第3の核形成層の材質が窒化アルミニウムであることを特徴とする請求項1に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記基板がr面基板であり、且つ前記非極性III族窒化物層が非極性a面{11−20}III族窒化物層であることを特徴とする請求項1に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 複数の核形成層を形成した後、窒化アルミニウムガリウム層を形成し、前記窒化アルミニウムガリウム層を前記核形成層と前記非極性III族窒化物層との間に介在させる工程をさらに備え、前記窒化アルミニウムガリウム層が下記式(I)で表される組成を有していることを特徴とする請求項2に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記核形成層の形成圧力が50〜150torrであることを特徴とする請求項1に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記核形成層の結晶成長におけるV/III比が1000〜1800であることを特徴とする請求項5に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記非極性III族窒化物層が非極性a面{11−20}窒化ガリウムであることを特徴とする請求項1に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記非極性III族窒化物層を1000〜1200℃の温度で形成することを特徴とする請求項1又は7に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記非極性III族窒化物層を50〜150torrの圧力で形成することを特徴とする請求項8に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記非極性III族窒化物層の結晶成長におけるV/III比が700〜1600であることを特徴とする請求項9に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 前記基板の材質がサファイア、窒化ガリウム、酸化亜鉛又は炭化ケイ素であることを特徴とする請求項1に記載の非極性III族窒化物層を有する多層構造の製造方法。
- 非極性III族窒化物層を有する多層構造であって、
基板と、
前記基板上に形成された複数の核形成層と、
前記核形成層上に形成され、前記基板との間に前記複数の核形成層が介在された非極性III族窒化物層とを備え、
前記複数の核形成層がそれぞれ独立して下記式(I)で表される窒化物から選択され、
前記複数の核形成層が、基板上に順に1000〜1200℃の温度で形成された第1の核形成層と、700〜900℃の温度で形成された第2の核形成層とを備え、且つ前記第1の核形成層及び第2の核形成層の材質が窒化アルミニウムであることを特徴とする非極性III族窒化物層を有する多層構造。 - 1000〜1200℃の温度で形成された第3の核形成層をさらに備え、前記第2の核形成層が前記第1の核形成層と第3の核形成層との間に介在され、且つ前記第3の核形成層の材質が窒化アルミニウムであることを特徴とする請求項12に記載の非極性III族窒化物層を有する多層構造。
- 前記基板がr面基板であり、且つ前記III族窒化物層が非極性a面{11−20}III族窒化物層であることを特徴とする請求項12に記載の非極性III族窒化物層を有する多層構造。
- 窒化アルミニウムガリウム層をさらに備え、前記窒化アルミニウムガリウム層が前記核形成層と前記非極性III族窒化物層との間に介在され、前記窒化アルミニウムガリウム層が下記式(I)で表される組成を有していることを特徴とする請求項12又は13に記載の非極性III族窒化物層を有する多層構造。
- 前記非極性III族窒化物層が非極性a面{11−20}窒化ガリウムであることを特徴とする請求項12に記載の非極性III族窒化物層を有する多層構造。
- 前記基板の材質がサファイア、窒化ガリウム、酸化亜鉛又は炭化ケイ素であることを特徴とする請求項12に記載の非極性III族窒化物層を有する多層構造。
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US8723185B2 (en) * | 2010-11-30 | 2014-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing wafer distortion through a high CTE layer |
US10340416B2 (en) * | 2016-02-26 | 2019-07-02 | Riken | Crystal substrate, ultraviolet light-emitting device, and manufacturing methods therefor |
WO2020047814A1 (zh) * | 2018-09-07 | 2020-03-12 | 苏州晶湛半导体有限公司 | 半导体结构及其制备方法 |
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CN109659407B (zh) * | 2018-10-31 | 2020-04-07 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管外延片及其制备方法 |
CN112736168A (zh) * | 2021-01-18 | 2021-04-30 | 西安电子科技大学 | 非极性GaN基微型发光二极管及制备方法 |
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JP2003077835A (ja) * | 2001-09-06 | 2003-03-14 | Ngk Insulators Ltd | Iii族窒化物素子及びiii族窒化物エピタキシャル基板 |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
WO2003089694A1 (en) * | 2002-04-15 | 2003-10-30 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga) QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
CN1894771B (zh) * | 2003-04-15 | 2012-07-04 | 加利福尼亚大学董事会 | 非极性(Al,B,In,Ga)N量子阱 |
JP2005260093A (ja) * | 2004-03-12 | 2005-09-22 | Yamaha Corp | 窒化ガリウムのヘテロエピタキシャル成長方法 |
TWI377602B (en) * | 2005-05-31 | 2012-11-21 | Japan Science & Tech Agency | Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) |
JP2007067077A (ja) * | 2005-08-30 | 2007-03-15 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体素子およびその製造方法 |
TW200845135A (en) * | 2006-12-12 | 2008-11-16 | Univ California | Crystal growth of M-plane and semi-polar planes of (Al, In, Ga, B)N on various substrates |
WO2009035648A1 (en) * | 2007-09-14 | 2009-03-19 | Kyma Technologies, Inc. | Non-polar and semi-polar gan substrates, devices, and methods for making them |
US7978744B2 (en) * | 2007-09-28 | 2011-07-12 | Sanyo Electric Co., Ltd. | Nitride based semiconductor laser device with oxynitride protective films on facets |
US20100012849A1 (en) * | 2008-07-21 | 2010-01-21 | United States Of America As Represented By The Administrator Of The National Aeronautics And Spac | Detector for dual band ultraviolet detection |
US7983317B2 (en) * | 2008-12-16 | 2011-07-19 | Corning Incorporated | MQW laser structure comprising plural MQW regions |
-
2009
- 2009-02-04 TW TW098103464A patent/TWI380368B/zh not_active IP Right Cessation
- 2009-05-18 JP JP2009120247A patent/JP5160496B2/ja not_active Expired - Fee Related
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TWI380368B (en) | 2012-12-21 |
US7981711B2 (en) | 2011-07-19 |
JP2010183050A (ja) | 2010-08-19 |
US20100193843A1 (en) | 2010-08-05 |
TW201030849A (en) | 2010-08-16 |
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