JP5130574B2 - トランジスタ - Google Patents
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- JP5130574B2 JP5130574B2 JP2008064893A JP2008064893A JP5130574B2 JP 5130574 B2 JP5130574 B2 JP 5130574B2 JP 2008064893 A JP2008064893 A JP 2008064893A JP 2008064893 A JP2008064893 A JP 2008064893A JP 5130574 B2 JP5130574 B2 JP 5130574B2
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- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 11
- 210000000746 body region Anatomy 0.000 claims description 15
- 239000002184 metal Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Description
17 シリコンピラー
18a、18b ゲート部材
51 トレース
55a、55b コンタクト
Claims (11)
- 上面又はその近傍に配置された第1の導電型のソース領域と、前記ソース領域の真下の内部に配置された第2の導電型のボディ領域とを第1の横方向に延びる実質的に直線のセクション及び前記実質的に直線のセクションの各端部に位置する丸みのあるセクションを有するレーストラック形レイアウトで配列した半導体材料のピラーと、
前記ピラーの両側にそれぞれ配置された、前記ピラーによって横方向に囲まれた第1の誘電領域及び前記ピラーを横方向に囲む第2の誘電領域と、
前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のフィールドプレートと、
前記ボディ領域に隣接する前記ピラーの上面又はその近傍で前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のゲート部材と、
を備えたトランジスタであって、
前記第1及び第2のゲート部材が、前記レーストラック形レイアウトの実質的に直線のセクションの第1の厚みを有するゲート酸化物によって前記ボディ領域から分離されており、前記ゲート酸化物が前記丸みのあるセクションの位置で前記第1の厚みよりも実質的に大きい第2の厚みを有する、
ことを特徴とするトランジスタ。 - 前記第1の厚みが凡そ500Åである、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第2の厚みが凡そ1μmである、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記ボディ領域の真下の前記ピラー内に配置された拡張ドレイン領域を更に備える、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第1の横方向での前記実質的に直線のセクションの長さが、前記レーストラック形レイアウトの幅よりも少なくとも30倍大きく、前記幅が前記第1の横方向に直交する第2の横方向にある、
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第1及び第2のゲート部材が前記第1及び第2のフィールドプレートから完全に絶縁されている、
ことを特徴とする請求項1に記載のトランジスタ。 - 第1の横方向に延びる実質的に直線のセクションと前記実質的に直線のセクションの各端部に位置する丸みのあるセクションとを有するレーストラック形レイアウトで配列した半導体材料のピラーと、
前記ピラーの両側にそれぞれ配置された、前記ピラーによって横方向に囲まれた第1の誘電領域及び前記ピラーを横方向に囲む第2の誘電領域と、
前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のフィールドプレートと、
前記ピラーの上部又はその近傍で前記第1及び第2の誘電領域内にそれぞれ配置された第1及び第2のゲート部材と、
を備えたトランジスタであって、
前記第1及び第2のゲート部材が、前記レーストラック形レイアウトの実質的に直線のセクションの第1の厚みを有するゲート酸化物によってボディ領域から分離されており、前記ゲート酸化物が前記丸みのあるセクションの位置で前記第1の厚みよりも実質的に大きい第2の厚みを有する、
ことを特徴とするトランジスタ。 - 前記第1の厚みが凡そ500Åである、
ことを特徴とする請求項7に記載のトランジスタ。 - 前記第2の厚みが凡そ1μmである、
ことを特徴とする請求項7に記載のトランジスタ。 - 前記ソース領域の真下の前記ピラー内に配置されたボディ領域と、
前記ボディ領域の真下の前記ピラー内に配置された拡張ドレイン領域と、
を更に備える、
ことを特徴とする請求項7に記載のトランジスタ。 - 前記第1の横方向での前記実質的に直線のセクションの長さが、前記レーストラック形レイアウトの幅よりも少なくとも30倍大きく、前記幅が前記第1の横方向に直交する第2の横方向にある、
ことを特徴とする請求項7に記載のトランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/707,820 US7595523B2 (en) | 2007-02-16 | 2007-02-16 | Gate pullback at ends of high-voltage vertical transistor structure |
US11/707.820 | 2007-02-16 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012031264A Division JP5562363B2 (ja) | 2007-02-16 | 2012-02-16 | トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008205483A JP2008205483A (ja) | 2008-09-04 |
JP5130574B2 true JP5130574B2 (ja) | 2013-01-30 |
Family
ID=39322651
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008064893A Expired - Fee Related JP5130574B2 (ja) | 2007-02-16 | 2008-02-15 | トランジスタ |
JP2012031264A Expired - Fee Related JP5562363B2 (ja) | 2007-02-16 | 2012-02-16 | トランジスタ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012031264A Expired - Fee Related JP5562363B2 (ja) | 2007-02-16 | 2012-02-16 | トランジスタ |
Country Status (5)
Country | Link |
---|---|
US (3) | US7595523B2 (ja) |
EP (2) | EP2437304A3 (ja) |
JP (2) | JP5130574B2 (ja) |
CN (2) | CN102412267B (ja) |
AT (1) | ATE550786T1 (ja) |
Families Citing this family (46)
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US7859037B2 (en) * | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
US8653583B2 (en) | 2007-02-16 | 2014-02-18 | Power Integrations, Inc. | Sensing FET integrated with a high-voltage transistor |
US7468536B2 (en) * | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
US7557406B2 (en) * | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
US7875962B2 (en) * | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
US7964912B2 (en) * | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US8207455B2 (en) * | 2009-07-31 | 2012-06-26 | Power Integrations, Inc. | Power semiconductor package with bottom surface protrusions |
US8115457B2 (en) | 2009-07-31 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus for implementing a power converter input terminal voltage discharge circuit |
US8207577B2 (en) * | 2009-09-29 | 2012-06-26 | Power Integrations, Inc. | High-voltage transistor structure with reduced gate capacitance |
US7893754B1 (en) | 2009-10-02 | 2011-02-22 | Power Integrations, Inc. | Temperature independent reference circuit |
US8634218B2 (en) * | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
US8310845B2 (en) | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
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2007
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JP2008205483A (ja) | 2008-09-04 |
CN102412267B (zh) | 2015-01-07 |
CN102412267A (zh) | 2012-04-11 |
US8222691B2 (en) | 2012-07-17 |
EP2437304A2 (en) | 2012-04-04 |
EP2437304A3 (en) | 2012-10-17 |
US20120280314A1 (en) | 2012-11-08 |
EP1959498A3 (en) | 2009-09-16 |
EP1959498A2 (en) | 2008-08-20 |
US7595523B2 (en) | 2009-09-29 |
US9601613B2 (en) | 2017-03-21 |
CN101246906A (zh) | 2008-08-20 |
EP1959498B1 (en) | 2012-03-21 |
US20080197418A1 (en) | 2008-08-21 |
JP5562363B2 (ja) | 2014-07-30 |
CN101246906B (zh) | 2012-01-04 |
JP2012129544A (ja) | 2012-07-05 |
ATE550786T1 (de) | 2012-04-15 |
US20090315105A1 (en) | 2009-12-24 |
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