JP5128947B2 - アモルファスシリコン薄膜トランジスタ及びその製作方法 - Google Patents
アモルファスシリコン薄膜トランジスタ及びその製作方法 Download PDFInfo
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- JP5128947B2 JP5128947B2 JP2007530270A JP2007530270A JP5128947B2 JP 5128947 B2 JP5128947 B2 JP 5128947B2 JP 2007530270 A JP2007530270 A JP 2007530270A JP 2007530270 A JP2007530270 A JP 2007530270A JP 5128947 B2 JP5128947 B2 JP 5128947B2
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- 239000010409 thin film Substances 0.000 title claims description 122
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims description 38
- 239000004973 liquid crystal related substance Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 29
- 239000011159 matrix material Substances 0.000 claims description 25
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 14
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 11
- 230000009849 deactivation Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図4は、本発明によるチャネル不活性化アモルファスシリコン薄膜トランジスタ100の或る代表的な実施形態を断面図で示している。トランジスタ100は、図1に示すアクティブマトリクス液晶ディスプレイ10のトランジスタ20の様な、アクティブマトリクス液晶ディスプレイのトランジスタとして使用することができる。背景技術の節で詳しく説明したように、この様なディスプレイは、ディスプレイの各画素を制御するためにそれら各画素に関係付けられた薄膜トランジスタ20のアレイを利用している。しかしながら、トランジスタ100は、例えば、有機発光ディスプレイや電気泳動ディスプレイの様な他のアクティブマトリクス表示装置に使用してもよい。トランジスタ100は、シリコン集積回路、素子、及び類似物の様な他のどの様な電気回路及び構成要素にでも使用することができる。
Claims (4)
- アクティブマトリクス液晶ディスプレイのチャネル不活性化アモルファスシリコン薄膜トランジスタを製作する方法において、
基板上にトランジスタ本体を形成する段階であって、ゲート電極とアモルファスシリコン層に挟まれたゲート誘電層を備えている薄膜構造を備えているトランジスタ本体を形成する段階と、
前記アモルファスシリコン層上に薄膜誘電層を形成する段階と、
前記薄膜誘電層の一部を選択的に除去することにより、前記アモルファスシリコン層の第1部分を露出させ、ソース接点領域を設ける段階と、
前記アモルファスシリコン層の前記第1部分の上の第1位置にソース接点材料を供給して、前記アモルファスシリコン層の前記第1部分とのソース接点を形成する段階と、
前記薄膜誘電層の一部を選択的に除去することにより、前記アモルファスシリコン層の第2部分を露出させ、ドレイン接点領域を設ける段階と、
前記アモルファスシリコン層の前記第2部分の上の第2位置にドレイン接点材料を供給して、前記アモルファスシリコン層の前記第2部分とのドレイン接点を設ける段階であって、前記ドレイン接点材料は、前記アモルファスシリコン層のチャネル領域のチャネル長を画定するために、前記第1位置から事前に決められた距離だけ離れた位置に設けられ、前記ソース接点材料と前記ドレイン接点材料は、前記アモルファスシリコン層の前記第1露出部分の少なくとも一部分の上と、前記アモルファスシリコン層の前記第2露出部分の少なくとも一部分の上と、フォトレジスト層の少なくとも一部分の上と、に堆積させた接触強化層を備え、前記接触強化層が、薄膜イッテルビウム層を含んでいることを特徴とする、ドレイン接点を設ける段階と、
前記フォトレジスト層の前記少なくとも一部分の上に堆積している前記接触強化層を、前記フォトレジスト層を除去することによりリフトオフする段階と、
前記アモルファスシリコン層の前記第1露出部分の少なくとも一部分の上の前記接触強化層の少なくとも一部分に接続されているソース電極を形成する段階と、
前記アモルファスシリコン層の前記第2露出部分の少なくとも一部分の上の前記接触強化層の少なくとも一部分に接続されているドレイン電極を形成する段階と、を含んでいる、方法。 - 少なくとも前記ソース電極と、前記ドレイン電極と、前記薄膜誘電層の、少なくとも一部分の上にキャップ層を形成する段階を更に含んでいる、請求項1に記載の方法。
- 前記接触強化層は、薄膜ドープアモルファスシリコン層を含んでいる、請求項1に記載の方法。
- 前記薄膜トランジスタの前記チャネル領域のチャネル長を、事前に決められた一組の半導体製造デザインルールの最小造形寸法から決める段階を更に含んでいる、請求項1に記載の方法。
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US10/932,478 US7527994B2 (en) | 2004-09-01 | 2004-09-01 | Amorphous silicon thin-film transistors and methods of making the same |
US10/932,478 | 2004-09-01 | ||
PCT/US2005/030842 WO2006028811A2 (en) | 2004-09-01 | 2005-08-31 | Amorphous silicon thin-film transistors and methods of making the same |
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JP2008511999A JP2008511999A (ja) | 2008-04-17 |
JP5128947B2 true JP5128947B2 (ja) | 2013-01-23 |
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Country Status (4)
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US (1) | US7527994B2 (ja) |
JP (1) | JP5128947B2 (ja) |
KR (1) | KR101078358B1 (ja) |
WO (1) | WO2006028811A2 (ja) |
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KR100455437B1 (ko) | 2001-12-29 | 2004-11-06 | 엘지.필립스 엘시디 주식회사 | 유리기판의 효율이 향상된 액정표시소자 |
US7038377B2 (en) | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
US20040086807A1 (en) | 2002-11-06 | 2004-05-06 | Chih-Yu Peng | Method of fabricating thin film transistor |
-
2004
- 2004-09-01 US US10/932,478 patent/US7527994B2/en active Active
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2005
- 2005-08-31 KR KR1020077007603A patent/KR101078358B1/ko active IP Right Grant
- 2005-08-31 JP JP2007530270A patent/JP5128947B2/ja not_active Expired - Fee Related
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KR20070061558A (ko) | 2007-06-13 |
US7527994B2 (en) | 2009-05-05 |
WO2006028811A2 (en) | 2006-03-16 |
WO2006028811A3 (en) | 2006-05-26 |
US20060046335A1 (en) | 2006-03-02 |
JP2008511999A (ja) | 2008-04-17 |
KR101078358B1 (ko) | 2011-10-31 |
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