JP5115798B2 - フォトレジストの除去速度を増加する装置及びプラズマアッシング方法 - Google Patents
フォトレジストの除去速度を増加する装置及びプラズマアッシング方法 Download PDFInfo
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
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- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
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- G03F7/427—Stripping or agents therefor using plasma means only
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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Description
ヘリウム及び水素から形成された上記で指摘のような、無酸素及び無窒素プラズマは、より攻撃性が少なく、従来の意味でフォトレジストと完全に反応しない。むしろ、プラズマは、例えば、昇華や気化によって、フォトレジストの部分を除去可能にする。結果として、基本的に無酸素及び無窒素プラズマは、基板からフォトレジストを除去するのに有効であるけれども、プラズマ照射は、処理室内や、排出ライン内及びそのいくつかの要素内のようなプラズマ工程室から下流の領域で、昇華された(あるいは気化された)あるいは除去されたフォトレジストや副生成物を堆積させる傾向がある。
結果として、処理室の定期的清掃が要求され、一般的に、プラズマ酸化(oxidizing plasma)の使用が要求される。プラズマ酸化は、処理室をあるがままの状態(インシトゥー)で清掃するための手段を提供する。しかしながら、プラズマ酸化は、バッフルプレートアッセンブリ、特に、プラズマが最初にバッフルプレートアッセンブリに激突する衝突中心で、温度上昇を引き起こすことがわかった。それに続くウエハ工程での温度上昇は、アッシング速度を減少させ、そして、ウエハ表面を横断するアッシング工程の均一性、特に、ウエハの中心と端部間の除去速度の相違に、否定的な影響を与えることがわかった。
ここでの開示は、フォトレジスト、エッチング後の残留物、及び揮発性の副生成物を基板から除去するためのプラズマアッシング工程である。一実施形態において、炭素、水素、又は炭素と水素の化合物を含む基板から、フォトレジスト材料とエッチング後の残留物とを除去するプラズマアッシング法であり、基板は低k誘電体材料を含み、プラズマは、本質的に無酸素及び無窒素のガス混合物から形成され、前記プラズマは、上部バッフルプレートを含むバッフルプレートアッセンブリを介して上記基板上に流され、フォトレジスト材料、エッチング後の残留物、及び揮発性の副生成物を上記基板から除去し、そして、アッシング処理中に、前記プラズマの流れと反対方向に、かつ、上記上部バッフルプレートの温度を低下させるのに有効な量の冷却ガスを、バッフルプレートアッセンブリを介して流す。
12 マイクロウエーブプラズマ発生要素
14 処理室
100 ガス分配システム
102 上部バッフルプレート
104 下部バッフルプレート
120、122 開口
Claims (21)
- 炭素、水素、あるいは炭素と水素との化合物からなる低k誘電体材料を含む基板から、フォトレジスト材料及びエッチング後の残留物を除去するためのプラズマアッシング法であって、
基本的に無酸素及び無窒素のガス混合物からプラズマを形成し、
上部バッフルプレートを含むバッフルプレートアッセンブリを介して前記基板上に前記プラズマを流し、フォトレジスト材料、エッチング後の残留物、及び揮発性の副生成物を前記基板から除去し、
アッシング処理中に、前記上部バッフルプレートの温度を低下させるのに有効な量の冷却ガスを、前記プラズマの流れと反対方向に、前記バッフルプレートアッセンブリを介して流す、
ことからなるプラズマアッシング法。 - 前記バッフルプレートは、前記上部バッフルプレートから離れており、かつ、該上部バッフルプレートと同一平面上にある少なくとも一つの付加的なバッフルプレートとからなる請求項1記載のプラズマアッシング法。
- 前記プラズマは、水素と希ガスとからなる請求項1記載のプラズマアッシング法。
- 前記希ガスは、ヘリウムである請求項3記載のプラズマアッシング法。
- プラズマ流と反対方向に流れる冷却ガスは、100スタンダード立方センチメートル/分から100スタンダードリットル/分の流速である請求項1記載のプラズマアッシング法。
- 冷却ガスを流すことと同時に基板を加熱することを、さらに含んでいる請求項1記載のプラズマアッシング法。
- 冷却ガスが、希ガスからなる請求項1記載のプラズマアッシング法。
- 冷却ガスが、ヘリウム、アルゴン、水素及びそれらの混合物からなるグループから選択される請求項1記載のプラズマアッシング法。
- 前記上部バッフルプレートと同一平面で、かつ、離れている少なくとも一つの付加的なバッフルプレートは、少なくとも一つのバッフルプレートの中心軸から外端へ密度が増加するように、中心軸の周囲に複数の開口が配置されている、請求項2記載のプラズマアッシング法。
- 上部バッフルプレートアッセンブリは、前記上部バッフルプレートの中心位置に物理的に連絡して配置される衝突板を含む、請求項2記載のプラズマアッシング法。
- 前記上部バッフルプレートと同一平面で、かつ、離れている少なくとも一つの付加的なバッフルプレートは、少なくとも一つのバッフルプレートの中心軸から外端へ密度が増加するように、中心軸の周囲に複数の開口が配置されている、請求項1記載のプラズマアッシング法。
- 炭素、水素、又は炭素と水素の化合物を含む基板から、フォトレジスト材料とエッチング後の残留物とを除去するためのプラズマアッシング法であって、前記基板は低k誘電体層を含み、
基本的に無酸素及び無窒素のガス混合物からプラズマを形成し、前記プラズマは水素及びヘリウムからなり、
処理室内に前記プラズマを流し、前記処理室は、上記プラズマと流体連絡するバッフルプレートアッセンブリを含み、そして、前記バッフルプレートアッセンブリは、略平面状の下部バッフルプレート上に固定配置される略平面状の上部バッフルプレートを含み、下部バッフルプレートは、中心軸の周囲に配置される複数の開口を含み、そして、複数の開口は、下部バッフルプレートの中心軸から外端へ密に増加し、
前記処理室へ酸素プラズマを導入することによって前記処理室を周期的に清掃し、及び、
プラズマアッシング処理中に、前記上部バッフルプレートの中央衝突領域とその周囲へ、冷却ガスを流すことによって前記バッフルプレートアッセンブリを冷却する、
ことからなるプラズマアッシング法。 - 前記バッフルプレートアッセンブリ上に流れる冷却ガスは、流速が100スタンダード立方センチメートル/分から100スタンダードリットル/分である、請求項12記載のプラズマアッシング法。
- 前記バッフルプレートアッセンブリ上の冷却ガスの流れは、プラズマの流れと逆方向である、請求項12記載のプラズマアッシング法。
- 前記冷却ガスは、希ガスを含む請求項12記載のプラズマアッシング法。
- 前記冷却ガスは、ヘリウム、アルゴン、水素、及びそれらの混合物から選択される請求項12記載のプラズマアッシング法。
- 請求項1または12記載のプラズマアッシング法を実行するための処理室であって、
略平面状の下部バッフルプレート上に位置する略平面状の上部バッフルプレートを含むバッフルプレートアッセンブリ、前記下部バッフルプレート、前記処理室の壁との熱的連絡をする少なくとも一つの熱伝導スタンドオフを含む前記上部バッフルプレート、
を含む処理室。 - 前記処理室の壁は、水冷されている請求項17記載の処理室。
- 前記上部バッフルプレートは、熱伝導材料から形成されている請求項17記載の処理室。
- 前記上部バッフルプレートは、アルミニウムで形成されている請求項17記載の処理室。
- 請求項17記載の処理室を含んでいるダウンストリーム型プラズマアッシャー。
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WO2006026765A2 (en) | 2006-03-09 |
KR20070060104A (ko) | 2007-06-12 |
KR101170861B1 (ko) | 2012-08-03 |
CN102610481A (zh) | 2012-07-25 |
US7449416B2 (en) | 2008-11-11 |
TW200611335A (en) | 2006-04-01 |
EP1784690A2 (en) | 2007-05-16 |
CN101053063B (zh) | 2012-10-03 |
JP2012191242A (ja) | 2012-10-04 |
JP2008512004A (ja) | 2008-04-17 |
WO2006026765A3 (en) | 2006-06-29 |
CN101053063A (zh) | 2007-10-10 |
TWI376748B (en) | 2012-11-11 |
US20060046470A1 (en) | 2006-03-02 |
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