JP5082853B2 - Mosfet - Google Patents
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- JP5082853B2 JP5082853B2 JP2007540922A JP2007540922A JP5082853B2 JP 5082853 B2 JP5082853 B2 JP 5082853B2 JP 2007540922 A JP2007540922 A JP 2007540922A JP 2007540922 A JP2007540922 A JP 2007540922A JP 5082853 B2 JP5082853 B2 JP 5082853B2
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- 239000012535 impurity Substances 0.000 claims description 138
- 239000000758 substrate Substances 0.000 claims description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 22
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 description 63
- 230000008569 process Effects 0.000 description 46
- 238000005468 ion implantation Methods 0.000 description 41
- 239000004065 semiconductor Substances 0.000 description 31
- 150000002500 ions Chemical class 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005223 charged particle activation analysis Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
しかし、特許文献1に開示されている構造は、蓄積モードであるので、ノーマリOFF化がされ難い(つまり、ゲート電極に電圧が印加されていないときでも、チャネルに電流が流れてしまう)、という問題が生じる。
上記の目的を達成するために、本発明に係る請求項1に記載のMOSFETは、基板の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層と、前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域と、前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域と、前記ドリフト層、および前記ベース領域の表面に形成されるゲート絶縁膜とを、備えており、前記ドリフト層は、前記ゲート絶縁膜の表面から第一の所定の深さまでの領域である第一の領域と、前記第一の所定の深さより深い領域に形成されている第二の領域とを、備えており、前記第一の領域の第一の導電型の不純物濃度は、前記第二の領域の第一の導電型の不純物濃度よりも低い。さらに、前記ベース領域は、前記ゲート絶縁膜の表面から第二の所定の深さに形成される第三の領域と、前記第二の所定の深さより深い領域に形成される第四の領域とを備え、前記第三の領域の第二の導電型の不純物濃度は、前記第四の領域の第二の導電型の不純物濃度よりも低く、前記第三の領域の第二の導電型の不純物濃度は、5×10 13 /cm 3 以上、1×10 17 /cm 3 以下であり、ノーマリーOFF型である。
本発明の請求項1に記載のMOSFETは、基板の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層と、前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域と、前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域と、前記ドリフト層、および前記ベース領域の表面に形成されるゲート絶縁膜とを、備えており、前記ドリフト層は、前記ゲート絶縁膜の表面から第一の所定の深さまでの領域である第一の領域と、前記第一の所定の深さより深い領域に形成されている第二の領域とを、備えており、前記第一の領域の不純物濃度は、前記第二の領域の不純物濃度よりも低い。さらに、前記ベース領域は、前記第一の領域の表面から前記第二の領域に渡って形成され、前記ベース領域の表面の前記第二の導電型の不純物濃度は、前記第一の領域の前記第一の導電型の不純物濃度より大きく、前記ベース領域は、表面から第二の所定の深さまでの領域である第三の領域と、前記第二の所定の深さより深い領域に形成されている第四の領域とを、備えており、前記第三の領域の第二の導電型の不純物濃度は、前記第四の領域の第二の導電型の不純物濃度よりも低く、前記第三の領域の第二の導電型の不純物濃度は、5×10 13 /cm 3 以上、1×10 17 /cm 3 以下であり、ノーマリーOFF型である。したがって、高耐圧で低オン損失(高チャネル移動度および低ゲート閾値電圧)なMOSFETを提供することができる。また、当該MOSFETは、いわゆる蓄積モード構造では無い。よって、ノーマリーOFF化が容易に実現される。
図1は、本実施の形態に係わる、炭化珪素から成る縦型MOSFETの構造を示す、断面図である。
実施の形態1では、第一の領域2a、第二の領域2bを有するドリフト層2の形成後に、第三の領域3a、第四の領域3bを有するベース領域3を形成する場合について言及した。しかし、図20に示すような手順を採用しても良い。
Claims (8)
- 基板(1)の主面上に形成されており、第一の導電型を有しており、炭化珪素から成るドリフト層(2)と、
前記ドリフト層の表面内に形成されており、第二の導電型を有するベース領域(3)と、
前記ベース領域の表面内に形成されており、第一の導電型を有するソース領域(4)と、
前記ドリフト層(2)前記ベース領域の表面に形成されるゲート絶縁膜(5)と
を、備えており、
前記ドリフト層は、
前記ゲート絶縁膜の表面から第一の所定の深さまでの領域である第一の領域(2a)と、前記第一の所定の深さより深い領域に形成されている第二の領域(2b)とを、備えており、
前記第一の領域(2a)の第一の導電型の不純物濃度は、
前記第二の領域(2b)の第一の導電型の不純物濃度よりも低く、
前記ベース領域(3)は、
前記第一の領域(2a)の表面から前記第二の領域(2b)に渡って形成され、
前記ベース領域(3)の表面の前記第二の導電型の不純物濃度は、
前記第一の領域(2a)の前記第一の導電型の不純物濃度より大きく、
前記ベース領域(3)は、前記ゲート絶縁膜(5)の表面から第二の所定の深さに形成される第三の領域(3a)と、前記第二の所定の深さより深い領域に形成される第四の領域(3b)とを備え、前記第三の領域(3a)の第二の導電型の不純物濃度は、前記第四の領域(3b)の第二の導電型の不純物濃度よりも低く、
前記第三の領域(3a)の第二の導電型の不純物濃度は、5×10 13 /cm 3 以上、1×10 17 /cm 3 以下であり、
ノーマリーOFF型である、
ことを特徴とするMOSFET。 - 前記第一の領域(2a)の第一の導電型の不純物濃度は、
5×1012/cm3以上、5×1016/cm3以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記第二の領域(2b)の第一の導電型の不純物濃度は、
1×1015/cm3以上、1×1017/cm3以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記第一の領域(2a)の厚さは、
1μm以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ドリフト層(2)の前記第一の領域(2a)の深さは、
前記ベース領域(3)の前記第三の領域(3a)の深さより深い、
ことを特徴とする請求項1に記載のMOSFET。 - 前記第三の領域(3a)の厚さは、
0.2μm以下である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ドリフト層(2)の表面の面方位は、
(11−20)面である、
ことを特徴とする請求項1に記載のMOSFET。 - 前記ドリフト層(2)の表面の面方位は、
面方位が(000−1)面である、
ことを特徴とする請求項1に記載のMOSFET。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007540922A JP5082853B2 (ja) | 2005-10-19 | 2006-10-06 | Mosfet |
Applications Claiming Priority (4)
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JP4545800B2 (ja) * | 2006-02-07 | 2010-09-15 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US8536582B2 (en) * | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
CN103855223B (zh) | 2009-03-25 | 2016-09-28 | 罗姆股份有限公司 | 半导体装置 |
JP5721351B2 (ja) | 2009-07-21 | 2015-05-20 | ローム株式会社 | 半導体装置 |
JP5736683B2 (ja) * | 2010-07-30 | 2015-06-17 | 三菱電機株式会社 | 電力用半導体素子 |
JP5569376B2 (ja) * | 2010-12-07 | 2014-08-13 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP2012160584A (ja) * | 2011-02-01 | 2012-08-23 | Sumitomo Electric Ind Ltd | 半導体装置 |
CN103426924A (zh) * | 2012-05-14 | 2013-12-04 | 无锡华润上华半导体有限公司 | 沟槽型功率mosfet及其制备方法 |
WO2015015672A1 (ja) * | 2013-07-31 | 2015-02-05 | 三菱電機株式会社 | 炭化珪素半導体装置及びその製造方法 |
CN110462112B (zh) * | 2017-03-28 | 2022-03-22 | 三菱电机株式会社 | 碳化硅基板、碳化硅基板的制造方法及碳化硅半导体装置的制造方法 |
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CN101310388A (zh) | 2008-11-19 |
US20090173997A1 (en) | 2009-07-09 |
JPWO2007046254A1 (ja) | 2009-04-23 |
WO2007046254A1 (ja) | 2007-04-26 |
DE112006002876B4 (de) | 2014-07-24 |
US7928469B2 (en) | 2011-04-19 |
KR20080047477A (ko) | 2008-05-28 |
KR100965968B1 (ko) | 2010-06-24 |
CN100593243C (zh) | 2010-03-03 |
DE112006002876T5 (de) | 2008-10-02 |
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