JP5047227B2 - シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 - Google Patents
シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 Download PDFInfo
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- JP5047227B2 JP5047227B2 JP2009128291A JP2009128291A JP5047227B2 JP 5047227 B2 JP5047227 B2 JP 5047227B2 JP 2009128291 A JP2009128291 A JP 2009128291A JP 2009128291 A JP2009128291 A JP 2009128291A JP 5047227 B2 JP5047227 B2 JP 5047227B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Description
11 チャンバー
12 支持軸
13 グラファイトサセプタ
14 石英ガラスルツボ
14A ルツボ側壁部
14B ルツボ底部
14C ルツボ湾曲部
15 ヒーター
16 支持軸駆動機構
17 シードチャック
18 ワイヤー
19 ワイヤー巻き取り機構
20 シリコン単結晶
21 シリコン融液
22 遮熱部材
23 制御装置
23a 着液制御部
23b 失透制御部
23c 単結晶制御部
23d 湯漏れ監視部
24 電源装置
24a 電源装置の一方の端子
24b 電源装置の他方の端子
25 比較器
31 不透明石英ガラス層
32 透明石英ガラス層
Claims (6)
- 引き上げ軸の先端に取り付けられた種結晶を石英ガラスルツボ内のシリコン融液に着液させると共に、前記石英ガラスルツボ側をマイナス極、前記引き上げ軸側をプラス極とする第1の電圧を印加しながらその電圧の変化を監視することで前記種結晶の着液状態を検出する工程と、
前記種結晶の着液後から一定の期間である前記シリコン融液の温度調整期間において、前記石英ガラスルツボ側をプラス極、前記引き上げ軸側をマイナス極とし前記第1の電圧よりも絶対値が大きな第2の電圧を印加することで前記石英ガラスルツボの内表面を失透させる工程と、
前記温度調整期間の終了後、前記石英ガラスルツボ側をマイナス極、前記引き上げ軸側をプラス極とし前記第2の電圧よりも絶対値が小さな第3の電圧を印加しながら前記種結晶を徐々に引き上げることによりシリコン単結晶を成長させる工程とを備えることを特徴とするシリコン単結晶の製造方法。 - 前記シリコン単結晶を成長させる工程は、前記石英ガラスルツボの内表面に形成した失透が無くなる前に、前記石英ガラスルツボ側をプラス極、引き上げ軸側をマイナス極とし前記第3の電圧よりも絶対値が大きな第4の電圧を一定期間印加して前記石英ガラスルツボの内表面の失透を再生させる工程をさらに含むことを特徴とする請求項1に記載のシリコン単結晶の製造方法。
- 前記シリコン単結晶を成長させる工程において、前記第3の電圧を印加する工程と前記第4の電圧を印加する工程とを交互に繰り返すことを特徴とする請求項2に記載のシリコン単結晶の製造方法。
- 前記第1乃至第3の電圧の変化を監視することにより前記シリコン融液の湯漏れを検出することを特徴とする請求項1乃至3のいずれか一項に記載のシリコン単結晶の製造方法。
- 前記石英ガラスルツボは、Na、K及びLiのうち1種又は2種以上のアルカリ金属イオンを含み、前記アルカリ金属イオンの濃度の合計が0.05ppm以上5ppm以下であることを特徴とする請求項1乃至4のいずれか一項に記載のシリコン単結晶の製造方法。
- 引き上げ軸と、前記引き上げ軸の昇降機構と、前記引き上げ軸の先端に取り付けられた種結晶と、シリコン融液が充填された石英ガラスルツボと、前記石英ガラスルツボ内の前記シリコン融液を加熱するヒーターと、前記石英ガラスルツボと前記引き上げ軸との間に電圧を印加する電源装置と、前記昇降機構、前記ヒーター、及び前記電源装置を制御する制御装置とを備え、
前記制御装置は、
前記引き上げ軸を降下させて前記種結晶を前記シリコン融液に着液させると共に、前記石英ガラスルツボ側をマイナス極、前記引き上げ軸側をプラス極とする第1の電圧を印加しながらその電圧の変化を監視することで前記種結晶の着液状態を検出する着液制御部と、
前記種結晶の着液後から一定の期間である前記シリコン融液の温度調整期間において、前記石英ガラスルツボ側をプラス極、前記引き上げ軸側をマイナス極とし前記第1の電圧よりも大きな第2の電圧を印加することで少なくとも前記石英ガラスルツボの内表面を失透させる失透制御部と、
前記温度調整期間の終了後、前記石英ガラスルツボ側をマイナス極、前記引き上げ軸側をプラス極とし前記第2の電圧よりも小さな第3の電圧を印加しながら前記種結晶を徐々に引き上げることによりシリコン単結晶を成長させる単結晶制御部とを含むことを特徴とするシリコン単結晶引き上げ装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009128291A JP5047227B2 (ja) | 2009-05-27 | 2009-05-27 | シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 |
US12/786,911 US8696813B2 (en) | 2009-05-27 | 2010-05-25 | Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible |
SG201003663-0A SG166758A1 (en) | 2009-05-27 | 2010-05-26 | Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible |
KR1020100048941A KR101277231B1 (ko) | 2009-05-27 | 2010-05-26 | 실리콘 단결정의 제조 방법, 실리콘 단결정 인상 장치 및 석영 유리 도가니 |
EP10164020.9A EP2256234B1 (en) | 2009-05-27 | 2010-05-27 | Method of manufacturing silicon single crystal and apparatus for pulling silicon single crystal |
CN2010101905898A CN101899704A (zh) | 2009-05-27 | 2010-05-27 | 硅单晶的制造方法、硅单晶提拉装置以及石英玻璃坩埚 |
EP10189512A EP2292812A3 (en) | 2009-05-27 | 2010-05-27 | Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible |
TW099117061A TWI399465B (zh) | 2009-05-27 | 2010-05-27 | 矽單晶之製造方法、矽單晶拉引裝置及石英玻璃坩堝 |
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JP2009128291A JP5047227B2 (ja) | 2009-05-27 | 2009-05-27 | シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 |
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JP2010275139A JP2010275139A (ja) | 2010-12-09 |
JP5047227B2 true JP5047227B2 (ja) | 2012-10-10 |
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US (1) | US8696813B2 (ja) |
EP (2) | EP2292812A3 (ja) |
JP (1) | JP5047227B2 (ja) |
KR (1) | KR101277231B1 (ja) |
CN (1) | CN101899704A (ja) |
SG (1) | SG166758A1 (ja) |
TW (1) | TWI399465B (ja) |
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JP5904079B2 (ja) * | 2012-10-03 | 2016-04-13 | 信越半導体株式会社 | シリコン単結晶育成装置及びシリコン単結晶育成方法 |
KR101443490B1 (ko) * | 2013-01-24 | 2014-09-22 | 주식회사 엘지실트론 | 잉곳 성장 장치 및 방법 |
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US10113247B2 (en) * | 2014-09-29 | 2018-10-30 | Shin-Etsu Handotai Co., Ltd. | Semiconductor single crystal pulling apparatus and method for remelting semiconductor single crystal using this |
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- 2009-05-27 JP JP2009128291A patent/JP5047227B2/ja active Active
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- 2010-05-25 US US12/786,911 patent/US8696813B2/en active Active
- 2010-05-26 KR KR1020100048941A patent/KR101277231B1/ko active IP Right Grant
- 2010-05-26 SG SG201003663-0A patent/SG166758A1/en unknown
- 2010-05-27 EP EP10189512A patent/EP2292812A3/en not_active Withdrawn
- 2010-05-27 TW TW099117061A patent/TWI399465B/zh active
- 2010-05-27 CN CN2010101905898A patent/CN101899704A/zh active Pending
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Also Published As
Publication number | Publication date |
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TWI399465B (zh) | 2013-06-21 |
KR20100128245A (ko) | 2010-12-07 |
CN101899704A (zh) | 2010-12-01 |
US20100326349A1 (en) | 2010-12-30 |
KR101277231B1 (ko) | 2013-06-26 |
US8696813B2 (en) | 2014-04-15 |
JP2010275139A (ja) | 2010-12-09 |
EP2292812A3 (en) | 2011-04-20 |
EP2256234A3 (en) | 2011-03-02 |
SG166758A1 (en) | 2010-12-29 |
EP2256234A2 (en) | 2010-12-01 |
TW201105828A (en) | 2011-02-16 |
EP2256234B1 (en) | 2013-11-06 |
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