CN101173368B - 在晶体生长过程中具有熔体掺杂功能的晶体生长装置 - Google Patents
在晶体生长过程中具有熔体掺杂功能的晶体生长装置 Download PDFInfo
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- CN101173368B CN101173368B CN 200610114122 CN200610114122A CN101173368B CN 101173368 B CN101173368 B CN 101173368B CN 200610114122 CN200610114122 CN 200610114122 CN 200610114122 A CN200610114122 A CN 200610114122A CN 101173368 B CN101173368 B CN 101173368B
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- 239000013078 crystal Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000002019 doping agent Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000000155 melt Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052710 silicon Inorganic materials 0.000 abstract description 12
- 239000010703 silicon Substances 0.000 abstract description 12
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 abstract 1
- 238000004821 distillation Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 238000002309 gasification Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN 200610114122 CN101173368B (zh) | 2006-10-30 | 2006-10-30 | 在晶体生长过程中具有熔体掺杂功能的晶体生长装置 |
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CN 200610114122 CN101173368B (zh) | 2006-10-30 | 2006-10-30 | 在晶体生长过程中具有熔体掺杂功能的晶体生长装置 |
Publications (2)
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CN101173368A CN101173368A (zh) | 2008-05-07 |
CN101173368B true CN101173368B (zh) | 2010-09-29 |
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CN 200610114122 Active CN101173368B (zh) | 2006-10-30 | 2006-10-30 | 在晶体生长过程中具有熔体掺杂功能的晶体生长装置 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5047227B2 (ja) * | 2009-05-27 | 2012-10-10 | ジャパンスーパークォーツ株式会社 | シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置 |
CN102009176B (zh) * | 2010-06-10 | 2013-03-27 | 常州天合光能有限公司 | 硅粉真空压实装置及其方法 |
CN102839414A (zh) * | 2011-06-21 | 2012-12-26 | 浙江昱辉阳光能源有限公司 | 单晶硅炉连续加料装置 |
CN103409796A (zh) * | 2013-08-01 | 2013-11-27 | 安徽大晟新能源设备科技有限公司 | 准单晶铸锭炉的籽晶熔化厚度测试装置 |
CN104695009B (zh) * | 2015-03-30 | 2017-04-19 | 江苏盎华光伏工程技术研究中心有限公司 | 一种实现在线电阻率调试的单晶炉及其控制方法 |
CN106400106B (zh) * | 2016-08-31 | 2019-07-12 | 内蒙古中环光伏材料有限公司 | 一种提高直拉单晶硅轴向电阻率均匀性的方法及装置 |
CN113882015A (zh) * | 2021-09-29 | 2022-01-04 | 西安奕斯伟材料科技有限公司 | 氮掺杂剂加料装置、方法及氮掺杂单晶硅棒的制造*** |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
CN1432075A (zh) * | 2000-05-10 | 2003-07-23 | Memc电子材料有限公司 | 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 |
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2006
- 2006-10-30 CN CN 200610114122 patent/CN101173368B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
CN1432075A (zh) * | 2000-05-10 | 2003-07-23 | Memc电子材料有限公司 | 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置 |
Non-Patent Citations (1)
Title |
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JP特开2002-255684A 2002.09.11 |
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CN101173368A (zh) | 2008-05-07 |
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