JP4990287B2 - 波長が193nm以下の照明システム用集光器 - Google Patents
波長が193nm以下の照明システム用集光器 Download PDFInfo
- Publication number
- JP4990287B2 JP4990287B2 JP2008535955A JP2008535955A JP4990287B2 JP 4990287 B2 JP4990287 B2 JP 4990287B2 JP 2008535955 A JP2008535955 A JP 2008535955A JP 2008535955 A JP2008535955 A JP 2008535955A JP 4990287 B2 JP4990287 B2 JP 4990287B2
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- Prior art keywords
- illumination
- mirror
- concentrator
- mirror shell
- shell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
(関連出願のクロスリファレンス)
K(z)=az2+bz+Z0
ここで、a、b又はZ0は、ゼロの値をとることもできる。
、特に
これによって、第1の領域を、ラスタ要素を配置した第1の面Bによって広範囲に覆って照射するので、幾何学的な光損失は最小化する。
、好ましくは
Claims (17)
- 第1のミラーシェル(1212.1)と、
第2のミラーシェル(1212.2)と、を備え、
前記第1のミラーシェル(1212.1)は前記第2のミラーシェル(1212.2)の内部に配設され、
前記第1のミラーシェル(1212.1)及び/又は前記第2のミラーシェル(1212.2)は、回転対称の部分と回転対称でない部分を有する、閉じた鏡面である、波長が193nm以下、好ましくは126nm以下、特に好ましくはEUV放射の照明システム用集光器。 - 前記第1のミラーシェル(1212.1)及び/又は前記第2のミラーシェル(1212.2)は、第1の光学面を有する第1の部位と第2の光学面を有する第2の部位を有する、請求項1記載の集光器。
- 前記第1のミラーシェル(1212.1)及び/又は前記第2のミラーシェル(1212.2)は、対称軸を有する、請求項1又は請求項2記載の集光器。
- 前記対称軸は、前記第1のミラーシェル(1212.1)及び前記第2のミラーシェル(1212.2)の共通の対称軸である、請求項3記載の集光器。
- 前記第1のミラーシェル(1212.1)及び/又は前記第2のミラーシェル(1212.2)は前記対称軸に対してn回対称であり、nは整数である、請求項3又は請求項4記載の集光器。
- 前記対称軸に対する対称は、以下の
二回対称
三回対称
四回対称
五回対称
六回対称
七回対称
八回対称である、請求項5記載の集光器。 - 前記集光器は、光源の光を受光し、前記集光器の後方の光路に配設された面に導き、
前記閉じたミラーシェルの前記回転対称でない部分は、四回対称であって、前記面に、ほぼ長方形の照明が形成されるように選択される、請求項1から請求項6迄の何れかに記載の集光器。 - 軸に最も近接したミラーシェルの内部の前記集光器は、絞りを有する、請求項1から請求項7迄の何れかに記載の集光器。
- 少なくとも前記第1のミラーシェル(1212.1)と前記第2のミラーシェル(1212.2)は、光を前記集光器の後方の光路上の面に導き、
第1の照明(A6.1)と第2の照明(A6.2)を前記面に結像し、前記第1の照明(A6.1)と前記第2の照明(A6.2)とは距離を有する、請求項1から請求項8迄の何れかに記載の集光器。 - 前記面には複数のラスタ要素が形状を有して配置されており、前記第1の照明(A6.1)及び/又は前記第2の照明(A6.2)は、前記複数のラスタ要素の配置の形状にほぼ対応する幾何学的な形状を有する、請求項9に記載の集光器。
- 前記照明がほぼ長方形の形状、特に正方形の形状を有する、請求項9又は請求項10に記載の集光器。
- 波長が193nm以下、好ましくは126nm以下、特に好ましくはEUV波長領域の、請求項1から請求項11迄の何れかに記載の集光器(3)を備えた照明システムであって、
前記集光器(3)は、光源(1)から、照明する面(103、1103)への光路上で、前記光源(1)と前記面(103、1103)の間に配設され、
前記面(103)の中、又は前記面(103)の近傍にはファセット光学素子(102)が利用可能に設けられている、照明システム。 - 前記ファセット光学素子(102)が複数のフィールドラスタ要素(402、502、1300)を有する、請求項12記載の照明システム。
- 前記ファセット光学素子の前記フィールドラスタ要素(1300)が、前記面(1103)のほぼ照明(A6.1、A6.2、A6.3)の領域に配設される、請求項13記載の照明システム。
- 瞳面(105)とさらなるファセット光学素子(104)を有し、
前記さらなるファセット光学素子(104)は前記瞳面(105)の中、または前記瞳面(105)の近傍に位置する、請求項12から請求項14迄の何れかに記載の照明システム。 - 前記さらなる光学素子は複数の瞳ラスタ要素を有する、請求項15記載の照明システム。
- フィールド面(114)のフィールドを照明する、請求項12から請求項16迄の何れかに記載の照明システムと、
前記フィールド面(114)の物体を像面(124)に結像する投影対物光学系(128)と、を備えた、
波長が193nm以下のマイクロリソグラフィー用投影露光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72789205P | 2005-10-18 | 2005-10-18 | |
US60/727,892 | 2005-10-18 | ||
PCT/EP2006/010004 WO2007045434A2 (de) | 2005-10-18 | 2006-10-17 | Kollektor für beleuchtungssysteme mit einer wellenlänge ≤ 193 nm |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009512223A JP2009512223A (ja) | 2009-03-19 |
JP2009512223A5 JP2009512223A5 (ja) | 2009-07-16 |
JP4990287B2 true JP4990287B2 (ja) | 2012-08-01 |
Family
ID=37698183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008535955A Expired - Fee Related JP4990287B2 (ja) | 2005-10-18 | 2006-10-17 | 波長が193nm以下の照明システム用集光器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080225387A1 (ja) |
EP (1) | EP1938150B1 (ja) |
JP (1) | JP4990287B2 (ja) |
DE (1) | DE502006009171D1 (ja) |
WO (1) | WO2007045434A2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007045396A1 (de) | 2007-09-21 | 2009-04-23 | Carl Zeiss Smt Ag | Bündelführender optischer Kollektor zur Erfassung der Emission einer Strahlungsquelle |
EP2083327B1 (en) * | 2008-01-28 | 2017-11-29 | Media Lario s.r.l. | Improved grazing incidence collector optical systems for EUV and X-ray applications |
DE102008000967B4 (de) * | 2008-04-03 | 2015-04-09 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die EUV-Mikrolithographie |
DE102009030501A1 (de) * | 2009-06-24 | 2011-01-05 | Carl Zeiss Smt Ag | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Beleuchtungsoptik zur Ausleuchtung eines Objektfeldes |
DE102009054540B4 (de) * | 2009-12-11 | 2011-11-10 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Mikrolithographie |
EP2517066B1 (en) * | 2009-12-21 | 2022-02-23 | Harman Professional Denmark ApS | Projecting illumination device with multiple light sources |
WO2011125827A1 (ja) * | 2010-04-02 | 2011-10-13 | 株式会社ニコン | 光源装置、光学装置、露光装置、デバイス製造方法、照明方法、露光方法、および光学装置の製造方法 |
DE102010029049B4 (de) * | 2010-05-18 | 2014-03-13 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für ein Metrologiesystem für die Untersuchung eines Objekts mit EUV-Beleuchtungslicht sowie Metrologiesystem mit einer derartigen Beleuchtungsoptik |
DE102011016058B4 (de) * | 2011-04-01 | 2012-11-29 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur Einstellung von Eigenschaften eines Strahlenbündels aus einem Plasma emittierter hochenergetischer Strahlung |
DE102011076297A1 (de) | 2011-05-23 | 2012-11-29 | Carl Zeiss Smt Gmbh | Blende |
DE102011076460A1 (de) * | 2011-05-25 | 2012-11-29 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik |
DE102013204441A1 (de) | 2013-03-14 | 2014-04-03 | Carl Zeiss Smt Gmbh | Kollektor |
DE102013218128A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Beleuchtungssystem |
DE102013218132A1 (de) | 2013-09-11 | 2015-03-12 | Carl Zeiss Smt Gmbh | Kollektor |
DE102015201138A1 (de) * | 2015-01-23 | 2016-01-28 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie |
DE102018207103A1 (de) | 2018-05-08 | 2019-03-21 | Carl Zeiss Smt Gmbh | Feldfacettenspiegel |
DE102018214559A1 (de) | 2018-08-28 | 2019-09-12 | Carl Zeiss Smt Gmbh | Optische Anordnung und EUV-Lithographievorrichtung damit |
US11543753B2 (en) | 2019-10-30 | 2023-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tunable illuminator for lithography systems |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2077740A (en) * | 1934-03-30 | 1937-04-20 | Martha W Caughlan | Reflecting surface |
DE3340462C1 (de) * | 1983-11-09 | 1985-04-18 | Westfälische Metall Industrie KG Hueck & Co, 4780 Lippstadt | Abgeblendeter Fahrzeugscheinwerfer |
DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
DE10053587A1 (de) * | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
US6195201B1 (en) * | 1999-01-27 | 2001-02-27 | Svg Lithography Systems, Inc. | Reflective fly's eye condenser for EUV lithography |
US6600552B2 (en) * | 1999-02-15 | 2003-07-29 | Carl-Zeiss Smt Ag | Microlithography reduction objective and projection exposure apparatus |
US7248667B2 (en) * | 1999-05-04 | 2007-07-24 | Carl Zeiss Smt Ag | Illumination system with a grating element |
DE19935568A1 (de) * | 1999-07-30 | 2001-02-15 | Zeiss Carl Fa | Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems |
DE10138284A1 (de) * | 2001-08-10 | 2003-02-27 | Zeiss Carl | Beleuchtungssystem mit genesteten Kollektoren |
AU2002325359A1 (en) * | 2001-08-10 | 2003-02-24 | Carl Zeiss Smt Ag | Collector with fastening devices for fastening mirror shells |
DE10208854A1 (de) * | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Beleuchtungssystem mit genestetem Kollektor zur annularen Ausleuchtung einer Austrittspupille |
US7084412B2 (en) * | 2002-03-28 | 2006-08-01 | Carl Zeiss Smt Ag | Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm |
DE10214259A1 (de) * | 2002-03-28 | 2003-10-23 | Zeiss Carl Semiconductor Mfg | Kollektoreinheit für Beleuchtungssysteme mit einer Wellenlänge <193 nm |
DE10219514A1 (de) * | 2002-04-30 | 2003-11-13 | Zeiss Carl Smt Ag | Beleuchtungssystem, insbesondere für die EUV-Lithographie |
DE60319735T2 (de) * | 2002-12-19 | 2009-04-16 | Carl Zeiss Smt Ag | Beleuchtungssytem mit einer effizienteren kollektoroptik |
US7481544B2 (en) * | 2004-03-05 | 2009-01-27 | Optical Research Associates | Grazing incidence relays |
JP2006245147A (ja) * | 2005-03-01 | 2006-09-14 | Canon Inc | 投影光学系、露光装置及びデバイスの製造方法 |
-
2006
- 2006-10-17 EP EP06806336A patent/EP1938150B1/de not_active Expired - Fee Related
- 2006-10-17 JP JP2008535955A patent/JP4990287B2/ja not_active Expired - Fee Related
- 2006-10-17 DE DE502006009171T patent/DE502006009171D1/de active Active
- 2006-10-17 WO PCT/EP2006/010004 patent/WO2007045434A2/de active Application Filing
-
2008
- 2008-03-21 US US12/053,305 patent/US20080225387A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1938150A2 (de) | 2008-07-02 |
WO2007045434A3 (de) | 2007-07-19 |
WO2007045434A2 (de) | 2007-04-26 |
EP1938150B1 (de) | 2011-03-23 |
JP2009512223A (ja) | 2009-03-19 |
DE502006009171D1 (de) | 2011-05-05 |
US20080225387A1 (en) | 2008-09-18 |
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