JP4976688B2 - ヒートスプレッダと金属板との接合方法 - Google Patents
ヒートスプレッダと金属板との接合方法 Download PDFInfo
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- JP4976688B2 JP4976688B2 JP2005361624A JP2005361624A JP4976688B2 JP 4976688 B2 JP4976688 B2 JP 4976688B2 JP 2005361624 A JP2005361624 A JP 2005361624A JP 2005361624 A JP2005361624 A JP 2005361624A JP 4976688 B2 JP4976688 B2 JP 4976688B2
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- Prior art keywords
- copper
- heat spreader
- metal plate
- laser
- joining
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims description 71
- 239000002184 metal Substances 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 128
- 239000010949 copper Substances 0.000 claims description 124
- 229910052802 copper Inorganic materials 0.000 claims description 124
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 40
- 229910052750 molybdenum Inorganic materials 0.000 claims description 27
- 239000011733 molybdenum Substances 0.000 claims description 27
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 26
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 26
- 238000003466 welding Methods 0.000 claims description 15
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 9
- 238000002844 melting Methods 0.000 description 28
- 230000008018 melting Effects 0.000 description 28
- 229910000679 solder Inorganic materials 0.000 description 24
- 239000004020 conductor Substances 0.000 description 21
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- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 229910052721 tungsten Inorganic materials 0.000 description 12
- 239000010937 tungsten Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000010521 absorption reaction Methods 0.000 description 6
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- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
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- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
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- 239000000919 ceramic Substances 0.000 description 3
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- 230000017525 heat dissipation Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 229920002050 silicone resin Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000008034 disappearance Effects 0.000 description 1
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- 239000000835 fiber Substances 0.000 description 1
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- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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Description
これは、アルミワイヤが例えば直径が300μmや400μmといった細線であり、チップで発生した熱を移動することが出来ないばかりか、アルミワイヤ自身がジュール発熱により発熱し、場合によっては溶断してしまう問題点がある。
溶融し溶融部20で固着する。IGBTチップ6上のゲートパッド9と、ゲート用導体パターン15の間をアルミワイヤ17で接続する。
つぎに、レーザ出射ユニット18の照準を溶融予定個所21に合わせる(同図(b))。
つぎに、レーザ出射ユニット18によりYAGレーザ19を照射し、銅板6と銅のヒートスプレッダ1を溶融して、溶融部20で固着する(同図(c))。
つぎに、レーザ出射ユニット18の照準を溶融予定個所21に合わせる(同図(b))。
つぎに、レーザ出射ユニット18によりYAGレーザ19を照射し、銅板5とクラッド材のヒートスプレッダ2の銅2aを溶融して、溶融部20で固着する(同図(c))。
つぎに、レーザ出射ユニット18の照準を溶融予定個所21に合わせる(同図(b))。
つぎに、レーザ出射ユニット18によりYAGレーザ19を照射し、銅板3aとクラッド材のヒートスプレッダ3の銅3aを溶融し、溶融部20で固着する(同図(c))。
2 クラッド材のヒートスプレッダ
2a 銅
2b 銅−モリブデン焼結体
3 クラッド材のヒートスプレッダ/モリブデン
3a 銅
3b モリブデン
4 ヒートスプレッダ
5 銅板
6 IGBTチップ
7 はんだ
8 エミッタ電極
9 ゲートパッド
10 導電パターン付き絶縁基板
11 セラミクス
12 裏面銅箔
13 エミッタ用導体パターン
14 コレクタ用導体パターン
15 ゲート用導電パターン
16 はんだ
17 アルミワイヤ
18 レーザ出射ユニット
19 YAGレーザ
20 溶融部
21 溶融予定個所
22 Niめっき膜
Claims (3)
- 半導体チップ上に固着材を介して固着されたヒートスプレッダ上に重ねて金属板を接合するヒートスプレッダと金属板との接合方法において、前記ヒートスプレッダおよび前記金属板が銅で形成され、前記ヒートスプレッダの厚みが1.5mm以下で、前記金属板の厚みが0.5mm以下であり、前記金属板にYAGレーザを照射して前記ヒートスプレッダと前記金属板とを溶接し、レーザパワー密度が0.4MW/cm2を超え、1.5MW/cm2未満であり、レーザエネルギーが50Jを超え、150J未満であることを特徴とするヒートスプレッダと金属板との接合方法。
- 半導体チップ上に固着材を介して固着されたヒートスプレッダ上に重ねて金属板を接合するヒートスプレッダと金属板との接合方法において、前記ヒートスプレッダが銅と銅−モリブデン焼結体の積層体であるクラッド材もしくは銅と銅−タングステン焼結体の積層体であるクラッド材であり、前記金属板が銅で形成され、前記ヒートスプレッダの厚みが1.5mm以下で、前記金属板の厚みが0.5mm以下であり、前記金属板にYAGレーザを照射して該金属板と前記積層体であるクラッド材の銅とを溶接し、レーザパワー密度が0.4MW/cm2を超え、1.5MW/cm2未満であり、レーザエネルギーが50Jを超え、150J未満であることを特徴とするヒートスプレッダと金属板との接合方法。
- 半導体チップ上に固着材を介して固着されたヒートスプレッダ上に重ねて金属板を接合するヒートスプレッダと金属板との接合方法において、前記ヒートスプレッダが銅とモリブデンの積層体であるクラッド材もしくは銅とタングステンの積層体であるクラッド材を含み、前記金属板が銅で形成され、前記ヒートスプレッダの厚みが1.5mm以下で、前記金属板の厚みが0.5mm以下であり、前記金属板にYAGレーザを照射して該金属板と前記積層体であるクラッド材の銅とを溶接し、レーザパワー密度が0.4MW/cm2を超え、1.5MW/cm2未満であり、レーザエネルギーが50Jを超え、150J未満であることを特徴とするヒートスプレッダと金属板との接合方法。
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DE112008003425B4 (de) * | 2007-12-20 | 2023-08-31 | Aisin Aw Co., Ltd. | Verfahren zum Herstellen eines Halbleiterbauelements |
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