JP4586508B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4586508B2 JP4586508B2 JP2004338399A JP2004338399A JP4586508B2 JP 4586508 B2 JP4586508 B2 JP 4586508B2 JP 2004338399 A JP2004338399 A JP 2004338399A JP 2004338399 A JP2004338399 A JP 2004338399A JP 4586508 B2 JP4586508 B2 JP 4586508B2
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- metal foil
- bonding
- heat spreader
- ultrasonic
- manufacturing
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- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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Description
すなわち、IGBT,FWDなどのパワー半導体デバイスは、半導体チップの接合部温度Tjを保証制限(例えば125℃)している。これに対して、放熱用金属ベース板に搭載した絶縁基板に半導体チップをマウントした片面冷却方式の半導体パッケージは、半導体チップの上面側がパッケージ内に充填した封止樹脂(例えば、シリコーン系封止樹脂(熱伝導率:0.1〜0.2W/mk))で封止されているためにチップの上面側からの放熱は殆ど期待できない。このために半導体チップの小型,大電流化に伴いチップの発熱密度(発熱密度の分布はチップの中央部で高く、周辺では低い)が増大すると、半導体チップの上面電極と接続する配線リードにアルミワイヤ(線径φ300〜400μm)を使用した配線構造では、チップ表面の温度上昇を低く抑えることが困難であるばかりか、アルミワイヤにワイヤ自身のジュール発熱も加わってワイヤが溶断してしまうおそれもある。
次に、ヒートスプレッダとして、銅,アルミなどの伝熱,導電性の高い金属ブロックで作られたヒートスプレッダを半導体チップの上に配置して上面電極(IGBTのエミッタ電極)半田接合した上で、該ヒートシンクを利用してその上面に配線リードとしてアルミワイヤをボンディングしたパワー半導体モジュールの従来構造を図8に示す。なお、図示例は2組のIGBT(Insulated Gate Bipolar Transistor)およびFWD(Free Wheeling Diode)をセットにしてパッケージに搭載した2個組のパワー半導体モジュールを示している。
例えば、定格電流120AのIGBTに対し、配線リードに線径φ300μmのアルミワイヤを用いてアルミワイヤ1本当たりの通電電流を8Aとすると、IGBTからの電流取り出しには15本のアルミワイヤが必要となる。また、このIGBTを3個並列接続して定格電流360Aに相当する3相インバータ装置のブリッジ回路を構築すると、U,V,W3相分の上アーム,下アームで合計18個のIGBTが必要で、その配線リードにアルミワイヤを採用すると必要なワイヤの本数は15×18=270本にもなり、そのワイヤボンディング(超音波接合)に要する工数も非常に多くなって工程のリードタイムが長くなる。
本発明は上記の点に鑑みなされたものであり、半導体チップの配線リードとして、配線工数が多く,リードタイムの長いアルミワイヤに替えてストラップ状の金属箔を採用した半導体モジュールを対象に、半導体チップの上面電極に半田接合したヒートスプレッダの上面に前記金属箔を超音波接合した半導体装置を提供し、さらにこの半導体装置について、金属箔の超音波接合時に半導体チップ自身,および半導体チップ/ヒートスプレッダ間の半田接合層にクラックが発生するのを抑止しつつ、ヒートスプレッダ/金属箔の間で電流の取り出しに必要な接続面積を確保して安定よく超音波接合が行えるようにした半導体装置の製造方法を提供することにある。
また、本発明によれば、前記半導体装置の製造工程に次記製造方法を適用し、ヒートスプレッダの上面に金属箔を超音波接合するものとする。すなわち、
(1)第1の方法では、その超音波接合工程に適用する超音波ボンディングツールのヘッド面に突起状のローレットを形成しておき、配線リードの金属箔をヒートスプレッダの上面に接合する際に前記ボンディングツールに形成したローレット面の突起を金属箔の上面に押し当てて超音波接合する(請求項2)。
(2)第2の方法では、ヒートスプレッダの上面に超音波接合する金属箔に対し、あらかじめ指定した接合箇所にヒートスプレッダへ向けて凸となる接合突起を分散してプレス成形しておき、金属箔をヒートスプレッダに接合する際に前記突起をヒートスプレッダの上面に重ねた上で、金属箔の上面に超音波ボンディングツールを押し当てて超音波接合する(請求項3)ようにし、ここで前記の接合突起は、ディンプル形状(請求項4)、あるいはボンディングツールに印加する超音波振動の振幅方向と平行に延在する直線状突起(請求項5)として形成することができる。
(3)また、第3の製造方法では、前記の接合突起を金属箔に形成する替わりに、ヒートスプレッダの上面に分散形成しておき、ヒートスプレッダに金属箔を超音波接合する際にヒートスプレッダに形成した前記接合突起の上に平坦な金属箔を重ねた上で、金属箔の上面に超音波ボンディングツールを押し当てて超音波接合する(請求項6)。
(4)さらに、第4の方法では、超音波ボンディングツールのヘッド面にヒートスプレッダ/金属箔間に指定した接合箇所に対応する凸部を分散形成しておき、ヒートスプレッダに金属箔を超音波接合する際に超音波ボンディングツールのヘッド面に形成した前記凸部を金属箔の上面に押し当て、ツールに押圧力を加えながら超音波接合するものとし(請求項7)、ここで前記凸部は角柱,円柱もしくはテーパー付き角柱,円柱のいずれかになり、その突き出し高さをボンディングツールのヘッド面に併設して形成した前記ローレットの突起(第1の方法)よりも高く設定する(請求項8)。
しかも、超音波ボンディングツールに加える押圧荷重,超音波振動エネルギーは、ヒートスプレッダ/金属箔間の重なり面域に分散して指定した接合箇所を接合するのに必要な値に設定すれば十分で、過大な押圧荷重,超音波振動エネルギーを加える必要がない。
また、半導体装置の製造方法に関して、超音波ボンディングツールのヘッド面に形成した凸部を金属箔の上面に押し当てて超音波接合を行うようにした本発明の第4の方法によれば、金属箔あるいはヒートスプレッダに接合突起を形成した方法と同等な効果が得られ、しかも金属箔,ヒートスプレッダの部品に接合突起をあらかじめ形成しておく加工工程が省けて製造コストの低減化が図れる。
すなわち、本発明による半導体装置は、図1Aで示すように金属ベース1に搭載した絶縁基板2に半田マウントしたIGBT4に対し、該IGBT4の上面にヒートスプレッダ7を配置してIGBTの主電極面に半田接合した上で、このヒートスプレッダの上面に配線リードとしてストラップ状の金属箔11を重ねせて超音波接合するようにした配線構造を備えた構成とし、その半導体装置の製造工程に以下述べる実施例の方法を適用してヒートスプレッダ/金属箔間に所要接合面積の通電路を確保して超音波接合を行うようにしたもので、次にその実施例を請求項別に説明する。
この実施例では図5に示した従来構造のアルミワイヤ9(配線リード)に替えてストラップ状の金属箔11を採用し、この金属箔11をボンディングツールとしての超音波ホーン12によりヒートスプレッダ7の上面に超音波接合した配線構造になる。
ここで、金属箔11は銅箔あるいはアルミ箔を採用したもので、その断面積は半導体チップであるIGBT4の電流容量に対応して次のように選定する。すなわち、図8の配線構造において線径φ300μmのアルミワイヤを6本用いていたとすれば、アルミワイヤの総本数(6本分)の断面積は0.42mm2である。したがって、金属箔11の所要断面積をアルミワイヤ9の総本数の断面積よりも大きく選定するものとし、例えば金属箔11のストラップ幅を2mmとしてアルミ箔の場合には厚さを0.212mm以上にすればよい。また、アルミに比べて導電率が高い銅箔を採用した場合には、アルミ箔と配線抵抗を同じとして銅箔の必要な厚さを0.0635mmに薄くすることが可能であるが、ハンドリング性を考慮して厚さは0.1mm以上とするのがよい。
上記の条件でヒートスプレッダ/金属箔間の超音波接合を行うと、超音波ホーン12から接合面に加わる押圧荷重A,超音波振動Bが前記ローレットの突起12aと当接した箇所に集中してこの部分が他の面域に先行して超音波接合されるようになる。なお、超音波ホーン12に加える押圧荷重A,および超音波振動Bのパワーについてはあらかじめ適正値に設定しておき、所定の接合時間が経過して前記接合箇所における接合面積の合計が所要の通電量に見合った面積に達したところで、接合面積がそれ以上に拡大する以前に超音波振動を停止して接合を終了する。
一方、上記の方法で超音波接合した半導体モジュールの供試体について発明者等が検証したところ、金属箔/ヒートスプレッダ間の接合箇所,接合面積が供試体によってばらつきの生じることが認められた。また、十分な接合面積を確保するように金属箔に押し当てた超音波ホーンの押圧荷重,超音波パワーを高く設定して超音波接合を行うと、図1Dで示すようにヒートスプレッダ7とIGBT4の上面電極面との間を接合した半田層8の周縁部(半田フィレット部分)にクラックCが生じ、またIGBT4のチップ自身にもクラック,割れが発生するなどの不具合が認められた。
なお、この場合に超音波ホーン12に加える押圧荷重A,および超音波振動Bのパワーを最適化することでクラック発生を抑えることが可能であるが、実際には接合部材の表面粗さ,うねり,超音波ホーン12の接触状態などの因子が超音波接合の進行に影響を及ぼすことから、このままでは超音波ホーン12に加える加圧荷重,超音波パワーの接合条件を一元的に管理して常に適正な超音波接合を行うことが難しい問題が残る。
そこで、上記問題を解消するために、この実施例では金属箔11に対し、ヒートスプレッダ7との重なり面域に指定した接合箇所に次記の接合突起を分散するようにしている。すなわち、図2(a),(b)では金属箔11に接合突起として円形状のディンプル11aをあらかじめプレス形成しておき、この金属箔11をヒートスプレッダ上面に超音波接合する際には、図3(a)で示すように金属箔11に形成したディンプル11aの凸面をヒートスプレッダ7の上面に向けて重ね合わせた上で、金属箔11の上面側に超音波ホーン12を押し当てて超音波接合を行うようにしている。なお、超音波ホーン12の端面には図1Bに示したと同様なローレット加工を施して突起12aを形成しておき、超音波接合の際に加えた矢印B方向の超音波振動でホーン/金属箔間がスリップするのを防ぎ、超音波振動エネルギーが前記の接合突起11aを介してヒートスプレッダ7との接合界面に効率よく伝播するようにするのがよい。これにより、超音波接合後の状態では図3(b)で表すように、ヒートスプレッダ/金属箔の接合界面には前記ディンプル11aに対応した楕円形状の接合部13が分散して形成されることになる。
これにより、超音波接合時には、超音波ホーン12から加える押圧荷重A,超音波振動Bが前記ディンプル11aとヒートスプレッダ7との当接面に集中してこの部分が超音波接合されるようになる。したがって、超音波ホーン12から接合部材の全面域に押圧荷重Aを加えて超音波接合を行う方法と比べ、低荷重でも指定した箇所(ディンプル11a)を確実に接合できる。しかも、この実施例では必要な数のディンプル11aを金属箔11とヒートスプレッダ7との重なり面域に分散形成したことで、配線リードとしてIGBT4から取り出す電流の局部集中を避けつつ所要の通電容量に見合った接合面積の通電路を確保でき、先記の実施例1で問題となっていた接合箇所,接続面積のバラツキ問題を効果的に解消できる。
なお、金属箔11の面上に形成した接合突起は、図2の円形状ディンプル11a,図4の直線状の突起11bに限定されるものではなく、超音波ホーン12からの超音波振動を集中荷重できれば任意の形状でもよい。
これに対して、この実施例ではヒートスプレッダ7の上面に接合突起7aとしてダボ状の突起を分散形成しておき、ヒートスプレッダ/金属箔間を超音波接合する際に前記接合突起7aの上に平坦な金属箔11を重ね合わせ、その上に超音波ホーン12を押し当てて超音波接合を行うようにしている。これにより、実施例2と同等な効果を奏することができる。なお、この接合突起7aはヒートスプレッダ7の製作時に同時成形できる。
この凸部12bは、先記の実施例1(図1B参照)で超音波ホーン12のヘッド面にローレット加工した突起12aと併設しており、その凸部の突き出し高さはローレットの突起12a(高さ:0.1〜1.0mm)よりも高く設定してローレット加工面から突き出すようにしておく。また、凸部12bの形状は図7(a),(b)で示すように角柱,あるいは図7(c),(d)で示すようにテーパ付き円柱などで実施することができる。なお、凸部12bの個数については、図示例のように4箇所に限定されるものではなく、ヒートスプレッダ/金属箔間の通電路として要求される接合面積などの条件により適宜に変更して実施するものとする。
この方法によれば、先記の実施例2,実施例3と同等な接合効果が得られる。しかも、実施例2,3の方法では金属箔11,ヒートスプレッダ7の各部品ごとに接合突起をプレス成形するために部品のコストが高くなるが、超音波ホーン12に凸部12を設けておけば、接合部品の加工が不要となるのでコストの低減化が図れる。
2 絶縁基板
2b 導体パターン
4 IGBT(パワー半導体チップ)
7 ヒートスプレッダ
7a 接合突起
8 半田層
11 金属箔
11a ディンプル(接合突起)
11b 直線状突起(接合突起)
12 超音波ホーン
12a ローレット
12b 凸部
13 超音波接合部
Claims (8)
- 絶縁基板にマウントしたパワー半導体チップに対し、該半導体チップの上面に導電性のヒートスプレッダを搭載して半導体チップの主電極面との間を半田接合した上で、ヒートスプレッダの上面に配線リードとしてストラップ状の金属箔を重ねて超音波接合した配線構造になる半導体装置において、金属箔/ヒートスプレッダ間の通電路となる接合箇所を前記金属箔とヒートスプレッダの重なり面域に分散させて超音波接合したことを特徴とする半導体装置。
- 請求項1記載の半導体装置の製造方法であって、その超音波接合工程に適用する超音波ボンディングツールのヘッド面に突起状のローレットを形成しておき、配線リードの金属箔をヒートスプレッダの上面に接合する際に前記ボンディングツールに形成したローレット面の突起を金属箔の上面に押し当てて超音波接合することを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法であって、ヒートスプレッダの上面に重ねて超音波接合する金属箔の箔面に、ヒートスプレッダへ向けて凸となる接合突起を分散してプレス成形しておき、金属箔をヒートスプレッダに接合する際に前記突起をヒートスプレッダの上面に重ねた上で、金属箔の上面に超音波ボンディングツールを押し当てて超音波接合することを特徴とする半導体装置の製造方法。
- 請求項3記載の製造方法において、金属箔の箔面に分散形成した接合突起がディンプル形状であることを特徴とする半導体装置の製造方法。
- 請求項3記載の製造方法において、金属箔の箔面に分散形成した接合突起が、ボンディングツールから金属箔の接合面に印加する超音波振動の振幅方向に延在する直線状突起であることを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法であって、金属箔を重ねて超音波接合するヒートスプレッダの上面に、金属箔に向けて凸となる接合突起を分散形成しておき、金属箔を超音波接合する際に前記接合突起の上に平坦な金属箔を重ねた上で、金属箔の上面に超音波ボンディングツールを押し当てて超音波接合することを特徴とする半導体装置の製造方法。
- 請求項1記載の半導体装置の製造方法であって、その超音波接合工程に適用する超音波ボンディングツールのヘッド面にヒートスプレッダ/金属箔間の接合箇所に対応する凸部を分散形成しておき、ヒートスプレッダに金属箔を超音波接合する際に超音波ボンディングツールのヘッド面に形成した前記凸部を金属箔の上面に押し当て、ツールに押圧力を加えながら超音波接合することを特徴とする半導体装置の製造方法。
- 請求項7記載の製造方法において、超音波ボンディングツールのヘッド面に形成した凸部が角柱,円柱もしくはテーパー付き角柱,円柱のいずれかになり、その突き出し高さを、前記凸部と併設してボンディングツールのヘッド面に形成したローレットの突起よりも高く設定したことを特徴とする半導体装置の製造方法。
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JP4884121B2 (ja) * | 2006-08-02 | 2012-02-29 | 三菱電機株式会社 | 電力制御用半導体装置 |
JP4985012B2 (ja) * | 2007-03-22 | 2012-07-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5271778B2 (ja) | 2009-04-10 | 2013-08-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5281498B2 (ja) * | 2009-06-23 | 2013-09-04 | 東芝三菱電機産業システム株式会社 | 加圧式超音波振動接合方法および加圧式超音波振動接合装置 |
JP2013258387A (ja) * | 2012-05-15 | 2013-12-26 | Rohm Co Ltd | パワーモジュール半導体装置 |
KR101584765B1 (ko) * | 2013-01-16 | 2016-01-22 | 주식회사 잉크테크 | 인쇄회로기판의 제조 방법 및 인쇄회로기판 |
DE102016204150A1 (de) * | 2016-03-14 | 2017-09-14 | Siemens Aktiengesellschaft | Verfahren, Halbleitermodul, Stromrichter und Fahrzeug |
JP6945418B2 (ja) * | 2017-10-24 | 2021-10-06 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP2004221294A (ja) * | 2003-01-15 | 2004-08-05 | Toshiba Corp | 超音波接合具および超音波接合具を用いた半導体装置の製造方法 |
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US20170156211A1 (en) * | 2015-11-30 | 2017-06-01 | Cree Fayetteville, Inc. | Method and Device for a High Temperature Vacuum-Safe Solder Stop Utilizing Laser Processing of Solderable Surfaces for an Electronic Module Assembly |
US10076800B2 (en) * | 2015-11-30 | 2018-09-18 | Cree Fayetteville, Inc. | Method and device for a high temperature vacuum-safe solder stop utilizing laser processing of solderable surfaces for an electronic module assembly |
US11135669B2 (en) | 2015-11-30 | 2021-10-05 | Cree, Inc. | Method and device for a high temperature vacuum-safe solder resist utilizing laser ablation of solderable surfaces for an electronic module assembly |
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