JP4970783B2 - 高効率半導体発光素子及びその製造方法 - Google Patents
高効率半導体発光素子及びその製造方法 Download PDFInfo
- Publication number
- JP4970783B2 JP4970783B2 JP2005355420A JP2005355420A JP4970783B2 JP 4970783 B2 JP4970783 B2 JP 4970783B2 JP 2005355420 A JP2005355420 A JP 2005355420A JP 2005355420 A JP2005355420 A JP 2005355420A JP 4970783 B2 JP4970783 B2 JP 4970783B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitting device
- light emitting
- semiconductor light
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 36
- 229910044991 metal oxide Inorganic materials 0.000 claims description 31
- 150000004706 metal oxides Chemical class 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910005540 GaP Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910020068 MgAl Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002178 crystalline material Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052596 spinel Inorganic materials 0.000 claims description 4
- 239000011029 spinel Substances 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910004140 HfO Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 238000007743 anodising Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 17
- 238000000605 extraction Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000002048 anodisation reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 nitride compound Chemical class 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
22 凹凸構造層
23、34、44、54 第1半導体層
24 第1電極
25 活性層
26 第2半導体層
27 第2電極
32 物質層
33 金属層
33a、42、52 金属酸化層
32b、33b、43、53 ホール
101、117 p−電極
102、116 p−GaN層
103、114 活性層
104、112 n−GaN層
105、118 n−電極
106、120 凹凸構造
111 サファイア基板
113 n−AlGaN
115 p−AlGaN
Claims (10)
- 半導体発光素子を製造する方法において、
(a)基板上に物質層及び金属層を順次に形成させる工程と、
(b)前記金属層を陽極酸化してホールが形成された金属酸化層に形成させる工程と、
(c)前記金属酸化層のホールに対応するように前記物質層内に前記基板に至るホールを形成させる工程と、
(d)前記金属酸化層を除去し、その上部に第1半導体層、活性層及び第2半導体層を順次に形成させる工程と、を含むことを特徴とする凹凸構造を備える半導体発光素子の製造方法。 - 前記基板は、サファイア(Al2O3)、シリコン(Si)、炭化ケイ素(SiC)、スピネル(MgAl2O4)、NdGaO3、LiGaO2、ZnO、MgOを含む無機物結晶質、リン化ガリウム(GaP)と砒化ガリウム(GaAs)を含むIII−V族化合物半導体または窒化ガリウム(GaN)のうちから選択されることを特徴とする請求項1に記載の凹凸構造を備える半導体発光素子の製造方法。
- 前記物質層は、屈折率が2.5より低い透明絶縁体または透明伝導体を含んで形成させることを特徴とする請求項1または2に記載の半導体発光素子の製造方法。
- 前記透明絶縁体は、SiO2、SiNx、Al2O3、HfO、TiO2またはZrOのうち少なくともいずれか一つの物質を含むことを特徴とする請求項3に記載の半導体発光素子の製造方法。
- 前記透明伝導体は、ZnOや添加物(Mg、Ag、Zn、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr)が含まれたIn酸化物のうち少なくともいずれか一つの物質を含むことを特徴とする請求項3に記載の半導体発光素子の製造方法。
- 前記金属層は、Alで形成されることを特徴とする請求項1から5のいずれか一項に記載の凹凸構造を備える半導体発光素子の製造方法。
- 半導体発光素子の製造方法において、
(a)基板上に金属層を形成させる工程と、
(b)前記金属層を陽極酸化してホールが形成された金属酸化層に形成させる工程と、
(c)前記金属酸化層を覆う第1半導体層、活性層及び第2半導体層を順次に形成させる工程と、を含むことを特徴とする凹凸構造を備える半導体発光素子の製造方法。 - 前記基板は、サファイア(Al2O3)、シリコン(Si)、炭化ケイ素(SiC)、スピネル(MgAl2O4)、NdGaO3、LiGaO2、ZnO、MgOを含む無機物結晶質、リン化ガリウム(GaP)と砒化ガリウム(GaAs)を含むIII−V族化合物半導体または窒化ガリウム(GaN)のうちから選択されることを特徴とする請求項7に記載の凹凸構造を備える半導体発光素子の製造方法。
- 前記(c)工程は、前記金属酸化層の上部を、均一な表面を持つようにレベリングする工程をさらに含むことを特徴とする請求項7または8に記載の凹凸構造を備える半導体発光素子の製造方法。
- 前記金属層は、Alを含むように形成させることを特徴とする請求項7から9のいずれか1項に記載の凹凸構造を備える半導体発光素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-0103113 | 2004-12-08 | ||
KR1020040103113A KR100682872B1 (ko) | 2004-12-08 | 2004-12-08 | 고효율 반도체 발광 소자 및 그 제조방법 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012017020A Division JP2012089891A (ja) | 2004-12-08 | 2012-01-30 | 高効率半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006165583A JP2006165583A (ja) | 2006-06-22 |
JP4970783B2 true JP4970783B2 (ja) | 2012-07-11 |
Family
ID=36573185
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005355420A Active JP4970783B2 (ja) | 2004-12-08 | 2005-12-08 | 高効率半導体発光素子及びその製造方法 |
JP2012017020A Pending JP2012089891A (ja) | 2004-12-08 | 2012-01-30 | 高効率半導体発光素子 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012017020A Pending JP2012089891A (ja) | 2004-12-08 | 2012-01-30 | 高効率半導体発光素子 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7642561B2 (ja) |
JP (2) | JP4970783B2 (ja) |
KR (1) | KR100682872B1 (ja) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8053789B2 (en) | 2006-12-28 | 2011-11-08 | Seoul Opto Device Co., Ltd. | Light emitting device and fabrication method thereof |
KR101316120B1 (ko) * | 2006-12-28 | 2013-10-11 | 서울바이오시스 주식회사 | 양극 알루미늄산화를 이용한 산란 중심을 구비하는 발광 소자 제조방법 및 그 발광 소자 |
JP5097460B2 (ja) * | 2007-06-26 | 2012-12-12 | パナソニック株式会社 | 化合物半導体素子およびそれを用いる照明装置ならびに化合物半導体素子の製造方法 |
JP2009054882A (ja) * | 2007-08-28 | 2009-03-12 | Univ Of Tokushima | 発光装置の製造方法 |
KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101405790B1 (ko) * | 2007-09-21 | 2014-06-12 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
DE102008021403A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
WO2009128646A2 (en) | 2008-04-16 | 2009-10-22 | Lumigntech Co., Ltd. | Semiconductor substrate and method for manufacturing the same |
KR101018760B1 (ko) * | 2008-10-24 | 2011-03-04 | 주식회사루미지엔테크 | 반도체 기판과 이의 제조 방법 |
KR101020961B1 (ko) * | 2008-05-02 | 2011-03-09 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100971688B1 (ko) * | 2008-05-08 | 2010-07-22 | 충남대학교산학협력단 | 자가형성된 ZnO 양자점이 구비된 발광다이오드 |
JP5167974B2 (ja) * | 2008-06-16 | 2013-03-21 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
US8633501B2 (en) | 2008-08-12 | 2014-01-21 | Epistar Corporation | Light-emitting device having a patterned surface |
CN101771110B (zh) * | 2008-12-29 | 2013-05-01 | 大连美明外延片科技有限公司 | 一种发光二极管及其制造方法 |
KR101029299B1 (ko) * | 2008-12-30 | 2011-04-18 | 서울대학교산학협력단 | 유기 발광 소자 및 그 제조 방법 |
TWI470823B (zh) * | 2009-02-11 | 2015-01-21 | Epistar Corp | 發光元件及其製造方法 |
KR101154596B1 (ko) * | 2009-05-21 | 2012-06-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TWM386591U (en) * | 2009-07-30 | 2010-08-11 | Sino American Silicon Prod Inc | Nano patterned substrate and epitaxial structure |
US8476660B2 (en) * | 2009-08-20 | 2013-07-02 | Integrated Photovoltaics, Inc. | Photovoltaic cell on substrate |
KR101296684B1 (ko) | 2009-11-18 | 2013-08-19 | 한국전자통신연구원 | 상 분리 현상을 이용한 유기 발광 다이오드 및 그 제조 방법 |
CN101826583A (zh) * | 2010-04-16 | 2010-09-08 | 武汉希瑞技术有限公司 | 一种氮化镓基led外延用蓝宝石图形化衬底制备方法 |
US8614452B2 (en) * | 2010-04-26 | 2013-12-24 | Gwangju Institute Of Science And Technology | Light-emitting diode having zinc oxide nanorods and method of fabricating the same |
CN101859856B (zh) * | 2010-06-04 | 2016-06-15 | 清华大学 | 发光二极管 |
CN102157636B (zh) * | 2011-01-27 | 2012-07-25 | 浙江大学 | 一种增强硅基薄膜电致发光的方法 |
KR20120116231A (ko) * | 2011-04-12 | 2012-10-22 | (주)버티클 | 반도체 소자 및 그 제조 방법 |
TWI459592B (zh) * | 2011-04-26 | 2014-11-01 | Univ Nat Chiao Tung | 奈米級側向成長磊晶之薄膜發光二極體及其製作方法 |
TW201248915A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Light-emitting diode of high light-extraction efficiency and its preparation method |
TW201248725A (en) * | 2011-05-31 | 2012-12-01 | Aceplux Optotech Inc | Epitaxial substrate with transparent cone, LED, and manufacturing method thereof. |
JP5200194B2 (ja) * | 2011-06-24 | 2013-05-15 | パナソニック株式会社 | 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法 |
TWI474507B (zh) * | 2011-10-18 | 2015-02-21 | Lextar Electronics Corp | 固態發光元件之製作方法 |
JP5988568B2 (ja) * | 2011-11-14 | 2016-09-07 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
CN104011886B (zh) * | 2011-12-23 | 2017-03-08 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
KR20130078280A (ko) * | 2011-12-30 | 2013-07-10 | 삼성전자주식회사 | 질화물계 반도체 소자 및 그 제조 방법 |
KR101309258B1 (ko) * | 2012-04-05 | 2013-09-17 | 영남대학교 산학협력단 | 발광 다이오드 및 그 제조 방법 |
CN103390707A (zh) * | 2012-05-08 | 2013-11-13 | 华夏光股份有限公司 | 半导体发光装置及其制造方法 |
US9000414B2 (en) * | 2012-11-16 | 2015-04-07 | Korea Photonics Technology Institute | Light emitting diode having heterogeneous protrusion structures |
KR20140100115A (ko) * | 2013-02-05 | 2014-08-14 | 삼성전자주식회사 | 반도체 발광 소자 |
JP2014165337A (ja) * | 2013-02-25 | 2014-09-08 | Rohm Co Ltd | 発光素子、発光素子パッケージおよび発光素子の製造方法 |
TWI543395B (zh) * | 2013-04-01 | 2016-07-21 | 中國砂輪企業股份有限公司 | 圖案化光電基板及其製作方法 |
JP6200585B2 (ja) | 2013-10-02 | 2017-09-20 | センサー エレクトロニック テクノロジー インコーポレイテッド | 陽極酸化アルミニウム層を含むヘテロ構造 |
US10454006B2 (en) | 2013-10-02 | 2019-10-22 | Sensor Electronic Technology, Inc. | Heterostructure including anodic aluminum oxide layer |
WO2015159843A1 (ja) * | 2014-04-14 | 2015-10-22 | Jx日鉱日石エネルギー株式会社 | エピタキシャル成長用基板の製造方法、それより得られるエピタキシャル成長用基板及びその基板を用いた発光素子 |
KR20160024170A (ko) | 2014-08-25 | 2016-03-04 | 삼성전자주식회사 | 반도체 발광 소자 |
US10069037B2 (en) * | 2015-04-20 | 2018-09-04 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
US10236413B2 (en) * | 2015-04-20 | 2019-03-19 | Epistar Corporation | Light-emitting device and manufacturing method thereof |
CN106960897A (zh) * | 2017-04-18 | 2017-07-18 | 仇凯弘 | 一种复合图形化衬底的制备方法 |
JP2018046301A (ja) * | 2017-12-14 | 2018-03-22 | ローム株式会社 | 発光素子および発光素子パッケージ |
CN108754290A (zh) * | 2018-07-05 | 2018-11-06 | 梁小红 | 一种不锈钢-氧化铝基陶瓷复合材料及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3746785A (en) * | 1971-11-26 | 1973-07-17 | Bendix Corp | Deflectable membrane optical modulator |
US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
CA2393081C (en) * | 1999-12-03 | 2011-10-11 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
JP4396010B2 (ja) | 2000-08-03 | 2010-01-13 | 日立電線株式会社 | 半導体の結晶成長方法 |
JP2004059325A (ja) | 2001-07-04 | 2004-02-26 | Fuji Photo Film Co Ltd | 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子 |
JP2003022973A (ja) * | 2001-07-06 | 2003-01-24 | Sanyo Electric Co Ltd | 窒化物系半導体素子および窒化物系半導体の形成方法 |
US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
JP2004055611A (ja) | 2002-07-16 | 2004-02-19 | Fuji Photo Film Co Ltd | 半導体発光素子 |
JP2004153089A (ja) | 2002-10-31 | 2004-05-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
KR100513316B1 (ko) * | 2003-01-21 | 2005-09-09 | 삼성전기주식회사 | 고효율 반도체 소자 제조방법 |
JP3720341B2 (ja) | 2003-02-12 | 2005-11-24 | ローム株式会社 | 半導体発光素子 |
JP2004288988A (ja) | 2003-03-24 | 2004-10-14 | Nanoteco Corp | 発光素子 |
JP2004319672A (ja) | 2003-04-15 | 2004-11-11 | Hitachi Cable Ltd | 発光ダイオード |
US20050082562A1 (en) * | 2003-10-15 | 2005-04-21 | Epistar Corporation | High efficiency nitride based light emitting device |
JP4631047B2 (ja) * | 2004-01-05 | 2011-02-16 | 国立大学法人広島大学 | 陽極酸化アルミナ膜を具備する構造体およびその製造方法並びにその利用 |
JP4471726B2 (ja) * | 2004-04-26 | 2010-06-02 | 京セラ株式会社 | 単結晶サファイア基板の製造方法 |
KR100624449B1 (ko) * | 2004-12-08 | 2006-09-18 | 삼성전기주식회사 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
-
2004
- 2004-12-08 KR KR1020040103113A patent/KR100682872B1/ko active IP Right Grant
-
2005
- 2005-12-06 US US11/294,403 patent/US7642561B2/en active Active
- 2005-12-08 JP JP2005355420A patent/JP4970783B2/ja active Active
-
2009
- 2009-11-30 US US12/627,714 patent/US8895331B2/en active Active
-
2012
- 2012-01-30 JP JP2012017020A patent/JP2012089891A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2006165583A (ja) | 2006-06-22 |
KR100682872B1 (ko) | 2007-02-15 |
US20060118803A1 (en) | 2006-06-08 |
US8895331B2 (en) | 2014-11-25 |
US20100075452A1 (en) | 2010-03-25 |
KR20060064306A (ko) | 2006-06-13 |
US7642561B2 (en) | 2010-01-05 |
JP2012089891A (ja) | 2012-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4970783B2 (ja) | 高効率半導体発光素子及びその製造方法 | |
JP4970782B2 (ja) | 凹凸構造を含む発光素子及びその製造方法 | |
KR100887067B1 (ko) | 나노 패턴 구조를 지닌 반도체 발광 소자의 제조 방법 | |
US7935554B2 (en) | Semiconductor light emitting device and method of manufacturing the same | |
US20140367727A1 (en) | Light-emitting device having dielectric reflector and method of manufacturing the same | |
JP2004228582A (ja) | 半導体素子の製造方法 | |
JP2006352129A (ja) | 発光ダイオードの製造方法 | |
KR20150138977A (ko) | 발광 소자 및 그의 제조방법 | |
US20120168797A1 (en) | Light emitting diode chip and method for manufacturing the same | |
TW201244157A (en) | A thin-film light-emitting diode with nano-scale epitaxial lateral growth and a method for fabricating the same | |
KR20100002485A (ko) | 나노 로드 또는 나노 홀을 포함하는 투명 전극층을구비하는 발광다이오드 및 그 제조방법 | |
KR20100044403A (ko) | 질화물 반도체 발광소자 및 그 제조방법 | |
US8158998B2 (en) | High-reflectivity and low-defect density LED structure | |
KR20100046619A (ko) | 질화물 반도체 발광 소자 및 이의 제조 방법 | |
KR100716648B1 (ko) | 복수개의 발광셀들을 갖는 발광소자 및 그 제조방법 | |
TWI385820B (zh) | 半導體發光元件及其製造方法 | |
TWI455255B (zh) | 圖案化基板結構、其製作方法及其發光元件 | |
KR20110109432A (ko) | 나노 발광다이오드 또는 마이크로 발광다이오드 구조 및 이의 제조방법 | |
KR101283062B1 (ko) | 나노스트럭쳐가 형성된 기판과 발광소자 및 그의 제조방법 | |
KR101054229B1 (ko) | 표면 거칠기를 갖는 ⅲ―ⅴ족 화합물 반도체 발광소자의 제조방법 | |
KR101653530B1 (ko) | 나노구조체를 이용한 백색 발광소자의 제조방법 및 그에 의해 제조된 나노구조체를 이용한 백색 발광소자 | |
TW202034538A (zh) | 發光元件及其製造方法 | |
JP2013168493A (ja) | 窒化物半導体発光素子およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080814 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20100930 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101021 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20101028 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20101111 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101116 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110412 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110830 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111129 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111202 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111226 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120321 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120405 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4970783 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S631 | Written request for registration of reclamation of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313631 |
|
S633 | Written request for registration of reclamation of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313633 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150413 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |