JP4958363B2 - パッケージング構造及び方法 - Google Patents

パッケージング構造及び方法 Download PDF

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Publication number
JP4958363B2
JP4958363B2 JP2001566605A JP2001566605A JP4958363B2 JP 4958363 B2 JP4958363 B2 JP 4958363B2 JP 2001566605 A JP2001566605 A JP 2001566605A JP 2001566605 A JP2001566605 A JP 2001566605A JP 4958363 B2 JP4958363 B2 JP 4958363B2
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gold
tin
chip
substrate
spot
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JP2003533870A (ja
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ラジェンドラ ペンドス
ナズィール アーマッド
キュンムン キム
ヤンド クェオン
サムェル タム
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Stats Chippac Inc
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Stats Chippac Inc
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Description

【０００１】
＜発明の背景＞
本発明は、フリップ・チップのパッケージング、特にチップと基板との間のＡｕ／Ｓｎ合金相互接続を提供することに関する。
【０００２】
基板にフリップ・チップを相互接続するための従来の方法は、Ｎｉ又はＮｉ／Ａｕがメッキされたポリマー粒子を備えた異方性導電フィルム（ＡＣＦ)を含んでおり、接触型相互接続を行う。相互接続点で閉じ込められたままのポリマー・フィルムの破片は、しばしば、不十分な電気的接触及び減少したパッケージの信頼性をもたらす。さらに、ポリマー・フィルムは、チップ・ボンディング・プロセスの間にボンディング接点の信頼性を下げる。ＡＣＦ、非導電性接着剤（ＮＣＡ）や非導電性ポリマー（ＮＣＰ）も用いる従来のフリップ・チップ技術は、チップ・ボンディング過程の間に基板上の隣接したボンディング・サイト上の接着剤を硬化させるという難題に苦しんでいる。
【０００３】
必要とされているのは、フリップ・チップと基板との間の冶金相互接続に備え、さらにチップと基板との間の改善されたボンディングに備えるというフリップ・チップの構造及び方法である。
【０００４】
＜発明の要約＞
一つの一般的な態様において、本発明は、チップであってそのバンプ側の上に形成された１セットのバンプを有するチップを供給すること、基板であってその上のメタライゼーション上に１セットの相互接続点を有する基板を供給すること、バンプ側上のチップの中央領域にポリマー接着剤の測定された量を供給すること、セットのバンプがセットの相互接続点に揃うようにチップを基板に揃えること、ポリマー接着剤の一部を基板に接触させるとともにバンプを相互接続点に接触させるためにチップと基板とをお互いの方に向けて押し付けること、バンプと相互接続点との間の冶金接続を形成するのに十分な高い温度にバンプを加熱することにより、フリップ・チップと基板との間の冶金接続を提供するための方法を特徴としている。
【０００５】
いくつかの実施形態において、バンプはスタッド・バンプであり、金からつくられる。また、相互接続点は、メタライゼーション上で錫（より好ましくは純粋な錫）のスポットを含んでいる。他の実施形態において、バンプは、例えば、Ａｕで、又はＮｉ／Ａｕ又は無電解のＮｉ／Ａｕでメッキした銅のような金属から形成され、そして相互接続点もまた、そのような材料を含んでいてもよい。スタッド・バンプがＡｕで作製され、相互接続点がＳｎのスポットである実施形態において、加熱工程は、バンプと相互接続点との接点でのボンディング段階においてＡｕとＳｎとの間で合金を生成するためにバンプの温度を十分に上昇させ、より好ましい実施形態では、ボンディング段階は８０：２０のＡｕ：Ｓｎ合金を構成する。そのような合金については、バンプは、約２００℃、より好ましくは約２３２℃より大きな温度にダイを熱することにより十分に加熱されてもよい。
【０００６】
いくつかの実施形態において、前記の方法はポリマーでアンダーフィルする工程をさらに含んでいる。
【０００７】
他の一般的な態様において、本発明は前記方法によって作製されたチップ・パッケージの構造を特徴としている。
【０００８】
他の一般的な態様において、本発明は、チップであってその上に形成されたバンプを有するチップと、基板であってその上のメタライゼーション上に相互接続点を有する基板とを含むチップ・パッケージの構造であって、バンプは相互接続点との接触を形成し、それぞれのバンプの材料と、バンプと接触する相互接続の材料との間の接点で合金が形成されているチップ・パッケージの構造を特徴としている。
【０００９】
いくつかの実施形態において、チップのバンプ表面と基板表面との間の中央領域に、硬化した接着性のポリマーを配置している。
【００１０】
いくつかの実施形態において、バンプ材料は、金であるか、又は金で、Ｎｉ／Ａｕで又は無電解のＮｉ／Ａｕでメッキした銅のような金属であり、また、相互接続点もまた、そのような材料を含んでいる。いくつかの実施形態において、接点での合金は、ＡｕとＳｎの合金であり、より好ましくは、合金は２０：８０のＳｎ：Ａｕ合金である。
【００１１】
＜発明の詳細な説明＞
本発明の典型的な実施形態の説明は後に続く。開示内容をここで使用すると、実質的に、従来の装置は本発明のプロセスで用いるために改造することができる。
【００１２】
図に関して、本発明によって相互接続を形成する前の配列状態のチップ及び基板を図１（Ａ）に、完成した相互接続を図１（Ｂ）に示す。１０で概略的に示されたフリップ・チップの構造は、チップ１２上で形成された複数のバンプ（例えば１４）、好ましくは金（Ａｕ）のスタッド・バンプを含んでいる。対応する相互接続点は、標準基板１６のメタライゼーション上で、複数の好ましい純粋な錫（Ｓｎ）スポット１８に備える。バンプ側２２上のチップの中央領域２０はさらに、金スタッド及びその後のボンディング・プロセスの間の相互接続領域まで広がらない十分に小さな接着剤２４のスポットを含んでいる。チップがフリップ・チップ形式で基板に接続されるときには、接着剤が基板にチップを保持し、スタッド・バンプ１４の終端は冶金相互接続２６をつくるために基板上の純粋な錫スポット１８で反応する。
【００１３】
この方法で組み立てられたチップのロウ又はアレイで実装された基板片は、簡単な道具を使ってモールドされ、従来の装置で容易に適合させることができる。モールドは、より好ましくは、ダイ・アンダーフィルとダイの周囲に沿ったモールド合成物を同時に提供する。はんだボールがその後付けられることができ、完成したチップは、例えば、基板を切断することによって、単数にされることが可能である。
【００１４】
フリップ・チップは、チップ上の金スタッド・バンプが基板上の錫スポットで並べるような方法で、基板で並べられる。ＳｎスポットとＡｕスタッド・バンプとの間の配置及び接触の後、ダイは、ある温度に、そしてバンプとスポットとの間の接点で冶金反応を与えるのに十分な時間の間、より好ましくは約２００℃を超えて加熱される。Ａｕ−Ｓｎ結合のためには、適温は約２３２℃であり、適切な時間は１〜２秒である。この温度で、Ｓｎスポットが溶け、ボンディング接点での温度が著しく増加し、その結果、ＳｎスポットとＡｕスタッドとの間の接点でボンディング段階を生成するために基板上のメタライゼーション層及びスタッド・バンプの両方からいくらかのＡｕが溶ける。より好ましくは、８０％：２０％のＡｕ：Ｓｎ合金構成が接点で形成される。そのような合金は、信頼できる電気的接触及び有利な機械的特性の両方を提供する。
【００１５】
Ｓｎ／Ａｕ相互接続がつくられるときには、接着性のスポットは、スペースでダイを保持するために硬化する。その構成の次のアンダーフィル・プロセスはチップの中央領域が接着性のポリマーで既に満たされることによって容易にされる。オーバーモールドはダイの下方の残ったスペース及びチップの間のスペースをいっぱいにし、結果として強健な構造をもたらす。
【００１６】
代わりの実施形態は、金スタッド・バンプと基板上の標準のメタライゼーションとの間の直接の接触に備える。後の処理のストレスに耐えることができるメタライゼーション接着は、チップ・ボンディング過程の間にボンディング接点でポリマーを間に置かないことによって形成される。
【００１７】
ウェハー・スケール・パッケージを達成するためには、ウェハーであってその上のスタッドバンプを有するウェハーが加熱ステージの上に表を上にして配置される。接着剤の適切な量で検査され、単数にされた基板片は、その後、温度と圧力の従来の処理条件を適用しながらウェハー・サイトに選ばれ、並べられ、配置され、そして接着される。熱圧縮ボンディングの前に基板サイトを掃除するために超音波洗浄が採用されてもよい。開示された処理は、基板一片全体ではなく特定の不合格にされたサイトだけ捨てられるので、基板材料の少しの廃棄物に備える。その上、ウェハー上で不合格にされたダイに接着する必要がない。ウェハーを十分に実装したあと、そのウェハーはアンダーフィリング及びインターチップスペースフィリングのためにモールドされる。ダイを単数にするウェハーダイシングは、モールディング及びはんだボール・マウンティング工程の後に続く。
【００１８】
代わりの実施形態において、スタッド・バンプは、Ｎｉ及びＡｕか、メッキされたＡｕか、又は無電解のＮｉ／ＡｕでメッキされたＣｕを含んでおり、これらの材料はまた、基板のボンディング・サイト上で提供されてもよい。Ｃｕ電極の冶金学の進歩で、ボンディング・サイトは、Ｎｉと重い軟質のＡｕで仕上げられてもよく、これによって、Ａｕを利用する熱圧縮ボンディング又は適切なボンディング段階を形成するＳｎのような金属を利用する低温融解のどちらか一方により、ウェハーと基板Ｉ／Ｏとの間の相互接続に備える。一旦、冶金接触が形成されると、その構造は、同時に、アンダーフィルされ、トランスファー・モールドされる。
他の実施形態は請求項内にある。
【図面の簡単な説明】
【図１】 図（Ａ）及び図（Ｂ）は本発明によってパッケージングの構造を作製するための本発明による工程の実例となる具体例を示す部分的な視点における概略図である。
【符号の説明】
１０ フリップ・チップの構造
１２ チップ
１４ 複数のバンプ
１６ 標準基板
１８ スポット
２０ チップの中央領域
２２ バンプ側
２４ 接着剤
２６ 冶金相互接続

Claims (10)

  1. チップを基板に相互接続する方法であって、
    チップの第一表面に、金からなる複数のバンプを形成する工程と、
    基板の第一表面に、錫からなる複数のスポットを形成する工程と、
    チップの第一表面にポリマー接着剤を適用し、ポリマー接着剤がチップの中央領域に配置されたまま、前記バンプやスポットと接触しないように、該ポリマー接着剤によってチップの第一表面を基板の第一表面に接着することを含み、ボンディング面が形成されるように各々のスポットを対応するバンプに接触させる工程と、
    各々のスポットから錫の一部を溶融させるために１〜２秒間、約２３２℃の温度までチップを加熱する工程と、
    各々のボンディング面における温度を錫の溶融点以上に上昇させるために、錫の融点で金と錫とを冶金反応させて、バンプの端部から金の一部を溶融させる工程と、
    金が８０％で錫が２０％の合金を生成するために、各々のスポットから溶融した錫の一部と、前記対応するバンプの端部から溶融した金の一部とを混合させることを含み、前記上昇温度に応じて、各々のボンディング面で錫と金との金属的相互接続を形成する工程であって、チップが基板上に固定されるように、前記加熱工程中に錫と金との金属的相互接続が形成されるときにポリマー接着剤を硬化する工程とを含むことを特徴とするチップを基板に相互接続する方法。
  2. 前記錫と金との金属的相互接続は、前記ボンディング面でのみ形成されることを特徴とする請求項１記載の方法。
  3. 前記各々のスポットの幅は、対応するバンプの幅よりも大きくないことを特徴とする請求項１記載の方法。
  4. 前記バンプは、金のみからなることを特徴とする請求項１記載の方法。
  5. 前記スポットは、錫のみからなることを特徴とする請求項４記載の方法。
  6. チップの第一表面に配置され、金を含む複数のバンプと、
    基板の第一表面に配置され、錫を含む複数のスポットであって、各々のスポットがボンディング面を形成すべく、対応するバンプと接触するように構成される複数のスポットと、
    前記バンプやスポットと接触することなく、チップの中央領域に配置され、チップの第一表面を基板の第一表面に接着する硬化性のポリマー接着剤と、
    各々のスポットを前記対応するバンプに接続するためのボンディング面に配置され、金が８０％で錫が２０％の合金を含んでなる錫と金との金属的相互接続であって、１〜２秒間、約２３２℃の温度まで前記チップを加熱して金と錫とを冶金反応させることによって形成され、該形成は、ポリマー接着剤が硬化されるときに形成される錫と金との金属的相互接続とを備えることを特徴とするチップ・パッケージ構造。
  7. 前記バンプは、金のみからなることを特徴とする請求項６記載のチップ・パッケージ構造。
  8. 前記バンプは、金でめっきされた第一金属を含むことを特徴とする請求項６記載のチップ・パッケージ構造。
  9. 前記スポットは、錫のみからなることを特徴とする請求項６記載のチップ・パッケージ構造。
  10. 前記スポットは、金メッキを含むことを特徴とする請求項６記載のチップ・パッケージ構造。
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US20060255474A1 (en) 2006-11-16
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US20120013005A1 (en) 2012-01-19
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US20120049357A1 (en) 2012-03-01
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US9312150B2 (en) 2016-04-12
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