JP2003533870A - パッケージング構造及び方法 - Google Patents

パッケージング構造及び方法

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Publication number
JP2003533870A
JP2003533870A JP2001566605A JP2001566605A JP2003533870A JP 2003533870 A JP2003533870 A JP 2003533870A JP 2001566605 A JP2001566605 A JP 2001566605A JP 2001566605 A JP2001566605 A JP 2001566605A JP 2003533870 A JP2003533870 A JP 2003533870A
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Japan
Prior art keywords
chip
bump
bumps
substrate
interconnection
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JP2001566605A
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JP4958363B2 (ja
Inventor
ラジェンドラ ペンドス
ナズィール アーマッド
キュンムン キム
ヤンド クェオン
サムェル タム
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チップパック，インク．
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Abstract

(57)【要約】 【課題】 フリップ・チップと基板との間の冶金相互接続に備え、さらにチップと基板との間の改善されたボンディングに備えるチップ・パッケージの構造及び方法を提供する。 【解決手段】 １セットのバンプ１４を有するチップ１２を供給し、１セットの相互接続点２６を有する基板１６を供給し、バンプ１４側上のチップの中央領域２０にポリマー接着剤２４の測定された量を供給し、バンプ１４が相互接続点２６に揃うようにチップ１２を基板１６に揃え、接着剤２４の一部を基板１６に接触させるとともにバンプ１４を相互接続点２６に接触させるためにチップ１２と基板１６とをお互いの方向に押し付け、バンプ１４と相互接続点２６との間の冶金接続２６を形成するのに十分な高い温度にバンプ１４を加熱することにより、フリップ・チップ１２と基板１６との間の冶金接続を提供する。

Description

【発明の詳細な説明】
【０００１】 ＜発明の背景＞ 本発明は、フリップ・チップのパッケージング、特にチップと基板との間のＡ
ｕ／Ｓｎ合金相互接続を提供することに関する。
【０００２】 基板にフリップ・チップを相互接続するための従来の方法は、Ｎｉ又はＮｉ／
Ａｕがメッキされたポリマー粒子を備えた異方性導電フィルム（ＡＣＦ)を含ん
でおり、接触型相互接続を行う。相互接続点で閉じ込められたままのポリマー・
フィルムの破片は、しばしば、不十分な電気的接触及び減少したパッケージの信
頼性をもたらす。さらに、ポリマー・フィルムは、チップ・ボンディング・プロ
セスの間にボンディング接点の信頼性を下げる。ＡＣＦ、非導電性接着剤（ＮＣ
Ａ）や非導電性ポリマー（ＮＣＰ）も用いる従来のフリップ・チップ技術は、チ
ップ・ボンディング過程の間に基板上の隣接したボンディング・サイト上の接着
剤を硬化させるという難題に苦しんでいる。
【０００３】 必要とされているのは、フリップ・チップと基板との間の冶金相互接続に備え
、さらにチップと基板との間の改善されたボンディングに備えるというフリップ
・チップの構造及び方法である。
【０００４】 ＜発明の要約＞ 一つの一般的な態様において、本発明は、チップであってそのバンプ側の上に
形成された１セットのバンプを有するチップを供給すること、基板であってその
上のメタライゼーション上に１セットの相互接続点を有する基板を供給すること
、バンプ側上のチップの中央領域にポリマー接着剤の測定された量を供給するこ
と、セットのバンプがセットの相互接続点に揃うようにチップを基板に揃えるこ
と、ポリマー接着剤の一部を基板に接触させるとともにバンプを相互接続点に接
触させるためにチップと基板とをお互いの方に向けて押し付けること、バンプと
相互接続点との間の冶金接続を形成するのに十分な高い温度にバンプを加熱する
ことにより、フリップ・チップと基板との間の冶金接続を提供するための方法を
特徴としている。
【０００５】 いくつかの実施形態において、バンプはスタッド・バンプであり、金からつく
られる。また、相互接続点は、メタライゼーション上で錫（より好ましくは純粋
な錫）のスポットを含んでいる。他の実施形態において、バンプは、例えば、Ａ
ｕで、又はＮｉ／Ａｕ又は無電解のＮｉ／Ａｕでメッキした銅のような金属から
形成され、そして相互接続点もまた、そのような材料を含んでいてもよい。スタ
ッド・バンプがＡｕで作製され、相互接続点がＳｎのスポットである実施形態に
おいて、加熱工程は、バンプと相互接続点との接点でのボンディング段階におい
てＡｕとＳｎとの間で合金を生成するためにバンプの温度を十分に上昇させ、よ
り好ましい実施形態では、ボンディング段階は８０：２０のＡｕ：Ｓｎ合金を構
成する。そのような合金については、バンプは、約２００℃、より好ましくは約
２３２℃より大きな温度にダイを熱することにより十分に加熱されてもよい。
【０００６】 いくつかの実施形態において、前記の方法はポリマーでアンダーフィルする工
程をさらに含んでいる。
【０００７】 他の一般的な態様において、本発明は前記方法によって作製されたチップ・パ
ッケージの構造を特徴としている。
【０００８】 他の一般的な態様において、本発明は、チップであってその上に形成されたバ
ンプを有するチップと、基板であってその上のメタライゼーション上に相互接続
点を有する基板とを含むチップ・パッケージの構造であって、バンプは相互接続
点との接触を形成し、それぞれのバンプの材料と、バンプと接触する相互接続の
材料との間の接点で合金が形成されているチップ・パッケージの構造を特徴とし
ている。
【０００９】 いくつかの実施形態において、チップのバンプ表面と基板表面との間の中央領
域に、硬化した接着性のポリマーを配置している。
【００１０】 いくつかの実施形態において、バンプ材料は、金であるか、又は金で、Ｎｉ／
Ａｕで又は無電解のＮｉ／Ａｕでメッキした銅のような金属であり、また、相互
接続点もまた、そのような材料を含んでいる。いくつかの実施形態において、接
点での合金は、ＡｕとＳｎの合金であり、より好ましくは、合金は２０：８０の
Ｓｎ：Ａｕ合金である。
【００１１】 ＜発明の詳細な説明＞ 本発明の典型的な実施形態の説明は後に続く。開示内容をここで使用すると、
実質的に、従来の装置は本発明のプロセスで用いるために改造することができる
。
【００１２】 図に関して、本発明によって相互接続を形成する前の配列状態のチップ及び基
板を図１（Ａ）に、完成した相互接続を図１（Ｂ）に示す。１０で概略的に示さ
れたフリップ・チップの構造は、チップ１２上で形成された複数のバンプ（例え
ば１４）、好ましくは金（Ａｕ）のスタッド・バンプを含んでいる。対応する相
互接続点は、標準基板１６のメタライゼーション上で、複数の好ましい純粋な錫
（Ｓｎ）スポット１８に備える。バンプ側２２上のチップの中央領域２０はさら
に、金スタッド及びその後のボンディング・プロセスの間の相互接続領域まで広
がらない十分に小さな接着剤２４のスポットを含んでいる。チップがフリップ・
チップ形式で基板に接続されるときには、接着剤が基板にチップを保持し、スタ
ッド・バンプ１４の終端は冶金相互接続２６をつくるために基板上の純粋な錫ス
ポット１８で反応する。
【００１３】 この方法で組み立てられたチップのロウ又はアレイで実装された基板片は、簡
単な道具を使ってモールドされ、従来の装置で容易に適合させることができる。
モールドは、より好ましくは、ダイ・アンダーフィルとダイの周囲に沿ったモー
ルド合成物を同時に提供する。はんだボールがその後付けられることができ、完
成したチップは、例えば、基板を切断することによって、単数にされることが可
能である。
【００１４】 フリップ・チップは、チップ上の金スタッド・バンプが基板上の錫スポットで
並べるような方法で、基板で並べられる。ＳｎスポットとＡｕスタッド・バンプ
との間の配置及び接触の後、ダイは、ある温度に、そしてバンプとスポットとの
間の接点で冶金反応を与えるのに十分な時間の間、より好ましくは約２００℃を
超えて加熱される。Ａｕ−Ｓｎ結合のためには、適温は約２３２℃であり、適切
な時間は１〜２秒である。この温度で、Ｓｎスポットが溶け、ボンディング接点
での温度が著しく増加し、その結果、ＳｎスポットとＡｕスタッドとの間の接点
でボンディング段階を生成するために基板上のメタライゼーション層及びスタッ
ド・バンプの両方からいくらかのＡｕが溶ける。より好ましくは、８０％：２０
％のＡｕ：Ｓｎ合金構成が接点で形成される。そのような合金は、信頼できる電
気的接触及び有利な機械的特性の両方を提供する。
【００１５】 Ｓｎ／Ａｕ相互接続がつくられるときには、接着性のスポットは、スペースで
ダイを保持するために硬化する。その構成の次のアンダーフィル・プロセスはチ
ップの中央領域が接着性のポリマーで既に満たされることによって容易にされる
。オーバーモールドはダイの下方の残ったスペース及びチップの間のスペースを
いっぱいにし、結果として強健な構造をもたらす。
【００１６】 代わりの実施形態は、金スタッド・バンプと基板上の標準のメタライゼーショ
ンとの間の直接の接触に備える。後の処理のストレスに耐えることができるメタ
ライゼーション接着は、チップ・ボンディング過程の間にボンディング接点でポ
リマーを間に置かないことによって形成される。
【００１７】 ウェハー・スケール・パッケージを達成するためには、ウェハーであってその
上のスタッドバンプを有するウェハーが加熱ステージの上に表を上にして配置さ
れる。接着剤の適切な量で検査され、単数にされた基板片は、その後、温度と圧
力の従来の処理条件を適用しながらウェハー・サイトに選ばれ、並べられ、配置
され、そして接着される。熱圧縮ボンディングの前に基板サイトを掃除するため
に超音波洗浄が採用されてもよい。開示された処理は、基板一片全体ではなく特
定の不合格にされたサイトだけ捨てられるので、基板材料の少しの廃棄物に備え
る。その上、ウェハー上で不合格にされたダイに接着する必要がない。ウェハー
を十分に実装したあと、そのウェハーはアンダーフィリング及びインターチップ
スペースフィリングのためにモールドされる。ダイを単数にするウェハーダイシ
ングは、モールディング及びはんだボール・マウンティング工程の後に続く。
【００１８】 代わりの実施形態において、スタッド・バンプは、Ｎｉ及びＡｕか、メッキさ
れたＡｕか、又は無電解のＮｉ／ＡｕでメッキされたＣｕを含んでおり、これら
の材料はまた、基板のボンディング・サイト上で提供されてもよい。Ｃｕ電極の
冶金学の進歩で、ボンディング・サイトは、Ｎｉと重い軟質のＡｕで仕上げられ
てもよく、これによって、Ａｕを利用する熱圧縮ボンディング又は適切なボンデ
ィング段階を形成するＳｎのような金属を利用する低温融解のどちらか一方によ
り、ウェハーと基板Ｉ／Ｏとの間の相互接続に備える。一旦、冶金接触が形成さ
れると、その構造は、同時に、アンダーフィルされ、トランスファー・モールド
される。 他の実施形態は請求項内にある。
【図面の簡単な説明】
【図１】 図（Ａ）及び図（Ｂ）は本発明によってパッケージングの構造を作製するため
の本発明による工程の実例となる具体例を示す部分的な視点における概略図であ
る。
【符号の説明】
１０ フリップ・チップの構造 １２ チップ １４ 複数のバンプ １６ 標準基板 １８ スポット ２０ チップの中央領域 ２２ バンプ側 ２４ 接着剤 ２６ 冶金相互接続
───────────────────────────────────────────────────── フロントページの続き (81)指定国 ＥＰ(ＡＴ，ＢＥ，ＣＨ，ＣＹ， ＤＥ，ＤＫ，ＥＳ，ＦＩ，ＦＲ，ＧＢ，ＧＲ，ＩＥ，Ｉ Ｔ，ＬＵ，ＭＣ，ＮＬ，ＰＴ，ＳＥ，ＴＲ)，ＪＰ，Ｋ Ｒ，ＳＧ (72)発明者 キム キュンムン 大韓民国 467−850 キョンギドウ イチ ョンシ ダイェルミュン サドンリ 312 −１ サムジンアパート１−301 (72)発明者 クェオン ヤンド アメリカ合衆国 95014 カリフォルニア クパチーノ ルシールアベニュー＃111 20020 (72)発明者 タム サムェル アメリカ合衆国 94015 カリフォルニア ダリーシティー アッシュランドドライ ブ 102 Ｆターム(参考） 5F044 KK01 KK18 LL01 LL11 QQ03

Claims (17)

    【特許請求の範囲】
  1. 【請求項１】 フリップ・チップと基板との間の冶金接続を提供するための方
    法であって、 チップであってそのバンプ側の上に形成された１セットのバンプを有するチッ
    プを供給する工程と、 基板であってその上のメタライゼーション上に１セットの相互接続点を有する
    基板を供給する工程と、 前記バンプ側上の前記チップの中央領域にポリマー接着剤の測定された量を供
    給する工程と、 前記セットのバンプが前記セットの相互接続点に揃うように前記チップを前記
    基板に揃える工程と、 前記ポリマー接着剤の一部を前記基板に接触させるとともに前記バンプを相互
    接続点に接触させるために前記チップと前記基板とをお互いの方向に押し付ける
    工程と、 前記バンプと前記相互接続点との間の冶金接続を形成するのに十分な高い温度
    までバンプを加熱する工程と を含むことを特徴とする方法。
  2. 【請求項２】 前記バンプはスタッド・バンプである請求項１記載の方法。
  3. 【請求項３】 前記バンプは金を含んでいる請求項１記載の方法。
  4. 【請求項４】 前記バンプは金を含む金属でメッキされている請求項１記載の
    方法。
  5. 【請求項５】 前記相互接続点が錫を含んでいる請求項１記載の方法。
  6. 【請求項６】 前記相互接続点が純粋な錫を含んでいる請求項５記載の方法。
  7. 【請求項７】 前記相互接続点が金を含む金属でメッキされた金属を含んでい
    る請求項１記載の方法。
  8. 【請求項８】 前記バンプがＡｕを含むスタッド・バンプであり、前記相互接
    続点がＳｎを含んでおり、前記加熱工程は、該バンプと該相互接続点との接点で
    のボンディング段階においてＡｕとＳｎとの間で合金を生成するために前記バン
    プの前記温度を十分に上昇させる請求項１記載の方法。
  9. 【請求項９】 前記加熱工程は、前記バンプと前記相互接続点との接点でのボ
    ンディング段階の間に８０：２０のＡｕ：Ｓｎを含む合金を生成するために前記
    バンプの前記温度を十分に上昇させる請求項８記載の方法。
  10. 【請求項１０】 前記加熱工程は、前記ダイを約２００℃より高い温度まで上
    昇させる請求項１記載の方法。
  11. 【請求項１１】 前記加熱工程は、前記ダイを約２３２℃の温度まで上昇させ
    る請求項１記載の方法。
  12. 【請求項１２】 ポリマーでアンダーフィルする工程をさらに含んでいる請求
    項１記載の方法。
  13. 【請求項１３】 請求項１２記載の方法によって作製されたチップ・パッケー
    ジの構造。
  14. 【請求項１４】 チップであってその上に形成されたバンプを有するチップと
    、基板であってその上のメタライゼーション上に相互接続点を有する基板とを含
    むチップ・パッケージの構造であって、 前記バンプは前記相互接続点との接触を形成し、前記それぞれのバンプの材料
    と、前記バンプと接触する前記相互接続の材料との間の接点で合金が形成されて
    いることを特徴とするチップ・パッケージの構造。
  15. 【請求項１５】 前記チップの前記バンプ表面と前記基板表面との間の中央領
    域に、硬化した接着性のポリマーを配置している請求項１４記載のチップ・パッ
    ケージの構造。
  16. 【請求項１６】 前記バンプ材料は金を含んでおり、前記相互接続点はＳｎを
    含んでおり、前記接点での前記合金はＡｕ／Ｓｎ合金を含んでいる請求項１４記
    載のチップ・パッケージの構造。
  17. 【請求項１７】 前記接点での前記合金は２０：８０のＳｎ：Ａｕ合金である
    請求項１６記載のチップ・パッケージの構造。
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* Cited by examiner, † Cited by third party
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US20060255474A1 (en) 2006-11-16
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US20130113093A9 (en) 2013-05-09
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US9312150B2 (en) 2016-04-12
WO2001069989A1 (en) 2001-09-20

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