JP4935765B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4935765B2 JP4935765B2 JP2008154999A JP2008154999A JP4935765B2 JP 4935765 B2 JP4935765 B2 JP 4935765B2 JP 2008154999 A JP2008154999 A JP 2008154999A JP 2008154999 A JP2008154999 A JP 2008154999A JP 4935765 B2 JP4935765 B2 JP 4935765B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、本発明の第1実施形態に係る半導体装置100の概略構成を示す図であり、(a)は概略平面図、(b)は同半導体装置100のA−A一点鎖線に沿った概略断面図である。この半導体装置100は、たとえば自動車などの車両に搭載され、車両用電子装置を駆動するための装置として適用されるものである。
なお、上記実施形態では、両金属板3、4のうち第2の金属板4の外面4bを金型200に押し付け、且つ第1の金属板3の外面3bと金型200との間に隙間204を設けた状態としたが、これとは逆に、第1の金属板3の外面3bを金型200に押し付け、且つ第2の金属板4の外面4bと金型200との間に隙間204を設けた状態として樹脂封止を行ってもよい。この場合も隙間204の間隔とフィラー71の最小粒径との関係は上記実施形態と同様とすればよい。
2 半導体素子としてのFWD
3 第1の金属板
3a 第1の金属板の内面
3b 第1の金属板の外面
4 第2の金属板
4a 第2の金属板の内面
4b 第2の金属板の外面
7 モールド樹脂
71 フィラー
200 金型
204 隙間
Claims (2)
- 半導体素子(1、2)を2枚の金属板(3、4)で挟み、前記半導体素子(1、2)を含む前記両金属板(3、4)の間を樹脂(7)で封止し、前記両金属板(3、4)の外側の面(3b、4b)を前記樹脂(7)より露出させてなる半導体装置の製造方法であって、
前記樹脂(7)として、当該樹脂(7)よりも硬い粒状のフィラー(71)が含有されているものを用い、
前記半導体素子(1、2)を前記両金属板(3、4)で挟んだワークを金型(200)内に設置し、一方の前記金属板(4)の外側の面(4b)を前記金型(200)に押し付け、且つ他方の前記金属板(3)の外側の面(3b)と前記金型(200)との間に隙間(204)を設けた状態で、前記金型(200)内に前記樹脂(7)を注入して前記樹脂(7)による封止を行うとともに前記隙間(204)に前記樹脂(7)を充填する工程と、
その後、前記樹脂(7)で封止された前記ワークを前記金型(200)から取り出し、他方の前記金属板(3)の外側の面(3b)に付着した前記樹脂(7)を削って除去することによって、前記両金属板(3、4)の外側の面(3b、4b)を露出させる工程とを備え、
前記金型(200)に前記ワークを設置するときに、前記隙間(204)の間隔を前記フィラー(71)の最小粒径よりも小さくすることを特徴とする半導体装置の製造方法。 - 前記樹脂(7)を削って除去することは、切削もしくは研削により行うことを特徴とする請求項1に記載の半導体装置の製造方法。
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JP2008154999A JP4935765B2 (ja) | 2008-06-13 | 2008-06-13 | 半導体装置の製造方法 |
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JP2008154999A JP4935765B2 (ja) | 2008-06-13 | 2008-06-13 | 半導体装置の製造方法 |
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JP2009302281A JP2009302281A (ja) | 2009-12-24 |
JP4935765B2 true JP4935765B2 (ja) | 2012-05-23 |
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JP2008154999A Expired - Fee Related JP4935765B2 (ja) | 2008-06-13 | 2008-06-13 | 半導体装置の製造方法 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011211017A (ja) * | 2010-03-30 | 2011-10-20 | Denso Corp | 半導体モジュールおよびそれを備えた半導体装置 |
JP5402778B2 (ja) * | 2010-03-30 | 2014-01-29 | 株式会社デンソー | 半導体モジュールを備えた半導体装置 |
JP2012033559A (ja) | 2010-07-28 | 2012-02-16 | J Devices:Kk | 半導体装置 |
JP5477260B2 (ja) * | 2010-11-09 | 2014-04-23 | 株式会社デンソー | 電子装置およびその製造方法 |
JP5732895B2 (ja) * | 2011-02-17 | 2015-06-10 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
JP5720296B2 (ja) * | 2011-02-22 | 2015-05-20 | 株式会社デンソー | 半導体装置の製造方法 |
JP6058353B2 (ja) * | 2012-11-02 | 2017-01-11 | 株式会社東芝 | 半導体装置 |
JP6708066B2 (ja) * | 2016-09-05 | 2020-06-10 | 株式会社デンソー | 半導体装置 |
JP6943051B2 (ja) | 2017-07-19 | 2021-09-29 | 株式会社デンソー | 半導体装置の製造方法 |
JP2023097911A (ja) * | 2021-12-28 | 2023-07-10 | I-Pex株式会社 | 樹脂封止金型 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2825332B2 (ja) * | 1990-09-21 | 1998-11-18 | 株式会社日立製作所 | 樹脂封止型半導体装置、該装置の製法および半導体封止用樹脂組成物 |
JP2007073583A (ja) * | 2005-09-05 | 2007-03-22 | Denso Corp | 半導体装置の製造方法 |
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