JP4846955B2 - 磁電変換素子 - Google Patents
磁電変換素子 Download PDFInfo
- Publication number
- JP4846955B2 JP4846955B2 JP2001574916A JP2001574916A JP4846955B2 JP 4846955 B2 JP4846955 B2 JP 4846955B2 JP 2001574916 A JP2001574916 A JP 2001574916A JP 2001574916 A JP2001574916 A JP 2001574916A JP 4846955 B2 JP4846955 B2 JP 4846955B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- sintered body
- layer
- substrate
- magnetoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 41
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 37
- 239000003870 refractory metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 102
- 238000000034 method Methods 0.000 description 39
- 229920005989 resin Polymers 0.000 description 29
- 239000011347 resin Substances 0.000 description 29
- 230000005291 magnetic effect Effects 0.000 description 27
- 239000010409 thin film Substances 0.000 description 19
- 239000011241 protective layer Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
Description
3 感磁部
4 導電性樹脂層
5 ソルダーレジストひずみ緩衝層
6 エポキシ樹脂保護層
7 切り込み
8 切断線
9 アルミナ部
10 導電層の焼結体部
11 Ni、Auメッキ部である。
Claims (2)
- 切り込み段差を備える側面の導電層と、絶縁部とが形成された絶縁性基板の上面に感磁部と内部電極を有し、前記絶縁部と前記導電層が焼結体で形成され、前記導電層の焼結体が、1600℃以上の高融点金属とセラミック粉とを主成分とし、前記高融点金属が前記導電層の焼結体に10%以上90%以下の割合で含まれ、前記切り込み段差は、磁電変換素子の長手方向にのみに設けられていることを特徴とする磁電変換素子。
- 前記高融点金属が、W、Mo、Taの何れか、またはそれらの少なくとも2種以上が混合されており、前記絶縁部がアルミナからなることを特徴とする請求項1に記載の磁電変換素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001574916A JP4846955B2 (ja) | 2000-04-06 | 2001-04-05 | 磁電変換素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000105450 | 2000-04-06 | ||
JP2000105450 | 2000-04-06 | ||
PCT/JP2001/002962 WO2001078161A1 (fr) | 2000-04-06 | 2001-04-05 | Transducteur magnetoelectrique et procede de production correspondant |
JP2001574916A JP4846955B2 (ja) | 2000-04-06 | 2001-04-05 | 磁電変換素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP4846955B2 true JP4846955B2 (ja) | 2011-12-28 |
Family
ID=18618797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001574916A Expired - Fee Related JP4846955B2 (ja) | 2000-04-06 | 2001-04-05 | 磁電変換素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6724059B2 (ja) |
JP (1) | JP4846955B2 (ja) |
KR (1) | KR100459361B1 (ja) |
CN (1) | CN1172382C (ja) |
WO (1) | WO2001078161A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003090289A1 (fr) * | 2002-04-19 | 2003-10-30 | Asahi Kasei Electronics Co., Ltd. | Transducteur magnetoelectrique et son procede de fabrication |
WO2004077585A1 (ja) * | 2003-02-26 | 2004-09-10 | Asahi Kasei Electronics Co., Ltd. | 半導体センサ及びその製造方法 |
JP2007506274A (ja) * | 2003-09-16 | 2007-03-15 | コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ. | 電子デバイスを製造する方法および電子デバイス |
JP2014192241A (ja) * | 2013-03-26 | 2014-10-06 | Asahi Kasei Electronics Co Ltd | 磁気センサ及びその製造方法 |
JP6774899B2 (ja) * | 2017-03-23 | 2020-10-28 | 旭化成エレクトロニクス株式会社 | ホール素子及びホール素子の製造方法 |
JP7136137B2 (ja) * | 2020-01-29 | 2022-09-13 | Tdk株式会社 | 磁気センサ、磁気検出装置及び磁気検出システム |
CN115424801A (zh) * | 2022-09-23 | 2022-12-02 | 苏州致微半导体有限公司 | 一种铁磁性粉料及其制备方法和应用 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0435076A (ja) * | 1990-05-31 | 1992-02-05 | F M C:Kk | 磁気抵抗素子及びその製造方法 |
JPH0521860A (ja) * | 1991-07-15 | 1993-01-29 | Sankyo Seiki Mfg Co Ltd | 磁気センサ |
JPH05304325A (ja) * | 1992-04-27 | 1993-11-16 | Matsushita Electric Ind Co Ltd | 半導体薄膜磁気抵抗素子およびその製造方法 |
JPH08274385A (ja) * | 1995-03-30 | 1996-10-18 | Showa Denko Kk | 磁電変換素子 |
JPH09183677A (ja) * | 1995-12-28 | 1997-07-15 | Kyocera Corp | メタライズ組成物及びそれを用いた配線基板 |
JPH09260741A (ja) * | 1996-03-25 | 1997-10-03 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子およびその製造方法 |
JPH10227845A (ja) * | 1997-02-14 | 1998-08-25 | Matsushita Electric Ind Co Ltd | チップ形磁気センサ素子及びその製造方法 |
JP2000012919A (ja) * | 1998-06-24 | 2000-01-14 | Asahi Kasei Denshi Kk | 磁電変換素子とその製造方法 |
JP2000101162A (ja) * | 1998-09-25 | 2000-04-07 | Asahi Kasei Denshi Kk | 小型磁電変換素子とその製造方法 |
JP2000150983A (ja) * | 1998-08-31 | 2000-05-30 | Asahi Kasei Denshi Kk | ホ―ル素子およびその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4978938A (en) * | 1988-12-23 | 1990-12-18 | General Motors Corporation | Magnetoresistor |
-
2001
- 2001-04-05 KR KR10-2001-7015657A patent/KR100459361B1/ko not_active IP Right Cessation
- 2001-04-05 US US09/980,873 patent/US6724059B2/en not_active Expired - Lifetime
- 2001-04-05 WO PCT/JP2001/002962 patent/WO2001078161A1/ja active IP Right Grant
- 2001-04-05 CN CNB018008410A patent/CN1172382C/zh not_active Expired - Fee Related
- 2001-04-05 JP JP2001574916A patent/JP4846955B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0435076A (ja) * | 1990-05-31 | 1992-02-05 | F M C:Kk | 磁気抵抗素子及びその製造方法 |
JPH0521860A (ja) * | 1991-07-15 | 1993-01-29 | Sankyo Seiki Mfg Co Ltd | 磁気センサ |
JPH05304325A (ja) * | 1992-04-27 | 1993-11-16 | Matsushita Electric Ind Co Ltd | 半導体薄膜磁気抵抗素子およびその製造方法 |
JPH08274385A (ja) * | 1995-03-30 | 1996-10-18 | Showa Denko Kk | 磁電変換素子 |
JPH09183677A (ja) * | 1995-12-28 | 1997-07-15 | Kyocera Corp | メタライズ組成物及びそれを用いた配線基板 |
JPH09260741A (ja) * | 1996-03-25 | 1997-10-03 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子およびその製造方法 |
JPH10227845A (ja) * | 1997-02-14 | 1998-08-25 | Matsushita Electric Ind Co Ltd | チップ形磁気センサ素子及びその製造方法 |
JP2000012919A (ja) * | 1998-06-24 | 2000-01-14 | Asahi Kasei Denshi Kk | 磁電変換素子とその製造方法 |
JP2000150983A (ja) * | 1998-08-31 | 2000-05-30 | Asahi Kasei Denshi Kk | ホ―ル素子およびその製造方法 |
JP2000101162A (ja) * | 1998-09-25 | 2000-04-07 | Asahi Kasei Denshi Kk | 小型磁電変換素子とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2001078161A1 (fr) | 2001-10-18 |
US6724059B2 (en) | 2004-04-20 |
KR100459361B1 (ko) | 2004-12-04 |
KR20020026871A (ko) | 2002-04-12 |
CN1366716A (zh) | 2002-08-28 |
US20020160548A1 (en) | 2002-10-31 |
CN1172382C (zh) | 2004-10-20 |
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