JP4839041B2 - 絶縁性液状ダイボンディング剤および半導体装置 - Google Patents
絶縁性液状ダイボンディング剤および半導体装置 Download PDFInfo
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- JP4839041B2 JP4839041B2 JP2005246970A JP2005246970A JP4839041B2 JP 4839041 B2 JP4839041 B2 JP 4839041B2 JP 2005246970 A JP2005246970 A JP 2005246970A JP 2005246970 A JP2005246970 A JP 2005246970A JP 4839041 B2 JP4839041 B2 JP 4839041B2
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- Die Bonding (AREA)
Description
(A)(a−1)式:R1 3SiO1/2で示されるシロキサン単位と式:R1 2R2SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(式中、R1はアルケニル基以外の一価炭化水素基であり、R2はアルケニル基である。)と(a−2)一分子中に少なくとも2個のアルケニル基を有する直鎖状オルガノポリシロキサンの混合物{但し、(a−1)成分と(a−2)成分の質量比は30:70〜60:40である。} 100質量部、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(B)成分の含有量は、(A)成分中のアルケニル基1モルに対して、本成分中のケイ素原子結合水素原子が0.1〜10モルとなる量である。}、
(C)ケイ素原子結合アルコキシ基を有する有機ケイ素化合物 0.1〜10質量部、
(D)平均粒子径が0.1〜50μmであり、JIS K 6253に規定のタイプAデュロメータ硬さが80以下である絶縁性球状シリコーンゴム粒子 5〜50質量部、
および
(E)ヒドロシリル化反応用触媒 触媒量
から少なくともなることを特徴とする。
(A)成分は本ダイボンディング剤の主剤であり、(a−1)アルケニル基を有するオルガノポリシロキサンレジンと(a−2)一分子中に少なくとも2個のアルケニル基を有する直鎖状オルガノポリシロキサンの混合物である。(a−1)成分はレジン状の分子構造を有し、式:R1 3SiO1/2で示されるシロキサン単位と式:R1 2R2SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなる。上式中、R1はアルケニル基以外の一価炭化水素基であり、具体的には、メチル基、エチル基、プロピル基、ブチル基、ペンチル基、ヘキシル基、ヘプチル基等のアルキル基;フェニル基、トリル基、キシリル基、ナフチル基等のアリール基;ベンジル基、フェネチル基等のアラルキル基;クロロメチル基、3−クロロプロピル基、3,3,3−トリフロロプロピル基等のハロ置換アルキル基が例示される。また、上式中、R2はアルケニル基であり、具体的には、ビニル基、アリル基、ブテニル基、ペンテニル基、ヘキセニル基、ヘプテニル基が例示される。
で表されるシロキサン化合物が挙げられる。このような(C)成分の有機ケイ素化合物の内、得られる硬化物の接着性が特に優れていることから、(C)成分の有機ケイ素化合物としては、一分子中に、ケイ素原子結合アルコキシ基とケイ素原子結合アルケニル基もしくはケイ素原子結合水素原子を有する有機ケイ素化合物であることが好ましい。
本発明の半導体装置は、図1に示されるように、半導体チップ1のアクティブ面と該半導体チップ取り付け部材2とが上記ダイボンディング剤の硬化物3により接合されてなることを特徴とする。本発明の半導体装置において、半導体チップ1はシリコン、ガリウム−ひ素等の表面に電子回路が形成されてなるものであり、また半導体チップ取り付け部材2は銅、鉄系合金等の金属からなり、通称、タブと呼ばれるものである。また、図1では、この半導体チップ取り付け部材として回路基板を用いている。この回路基板はセラミック、ガラス等の基材からなり、その表面には金、銀、銅等の金属製の回路配線が形成されている。また、回路基板の表面には、コンデンサ、抵抗、コイル等の電気素子が実装されていてもよい。
ダイボンディング剤の粘度は、E型回転粘度計(株式会社トキメック製のDVU−EII型)を用いて、回転数0.5rpmで測定した。また、ダイボンディング剤のチクソ性は、上記の回転粘度計を用いて、回転数2.5rpmで測定した粘度に対する、回転数0.5rpmで測定した粘度の比を求め、これをチクソ性(チクソ指数)とした。
ポリイミドフィルム上に、ダイボンディング剤を塗布面積8mm×8mm、厚み50μmでスクリーン印刷した。次いで、半導体チップに見立てた18mm×18mm、厚み150μmの透明なガラス板を載せて、ダイボンディング剤を厚み25μmまで押し伸ばした。これを200℃で1分間加熱してダイボンディング剤を硬化させた後、ガラス板上からガラス板と硬化したダイボンディング剤の界面のボイド(気泡)の有無を確認した。
半導体チップのアクティブ面と該半導体チップ取り付け部材であるポリイミドフィルム製回路基板の裏面とを絶縁性液状ダイボンディング剤により密着させた後、これを200℃で1分間加熱して、前記ダイボンディング剤を硬化させた。その後、半導体チップのアクティブ面中央に設けられたボンディングパッドとポリイミドフィルム回路基板の端部に設けられたボンディングパッドとをボンディングワイヤによりワイヤボンディングした。なお、ボンディングワイヤのワイヤボンディングは超音波熱圧着法(接合温度160〜250℃、荷重30〜100mg/本)により行った。次いで、このボンディングワイヤとボンディングパッドまたはボンディングワイヤとボンディングパッドとのネック形状を顕微鏡により観察した。この際、ボンディングワイヤを引っ張ることにより、このボンディングワイヤの接合状態を観察し、ボンディングワイヤの全数に対するボンディングワイヤの接合不良の割合をワイヤボンダビリティとして評価した。
試作した半導体装置について、−25℃で15分間、120℃で15分間を1サイクルとするサーマルサイクル試験を100サイクル実施し、サーマルサイクルチャンバー取り出し後の半導体動作不良率を求めた。
式:(CH3)3SiO1/2で示されるシロキサン単位と式:(CH3)2(CH2=CH)SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(ビニル基の含有量=2.01質量%)40質量部と粘度2,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.23質量%)60質量部からなるオルガノポリシロキサン混合物に、平均粒子径が2μm、平均凝集粒子径が15μmであり、タイプAデュロメータ硬さが30である球状シリコーンゴム粒子20質量部を添加し、室温で30分間混合して、均一なペースト状コンパウンドを調製した。このコンパウンドに、粘度20mPa・sの分子鎖両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量=1.5質量%)3.5質量部(前記オルガノポリシロキサン混合物中のビニル基1モルに対して、本メチルハイドロジェンポリシロキサン中のケイ素原子結合水素原子が1.5モルとなる量)、式:
式:(CH3)3SiO1/2で示されるシロキサン単位と式:(CH3)2(CH2=CH)SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(ビニル基の含有量=2.01質量%)45質量部と粘度2,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.23質量%)55質量部からなるオルガノポリシロキサン混合物に、平均粒子径が2μm、平均凝集粒子径が15μmであり、タイプAデュロメータ硬さが30である球状シリコーンゴム粒子10質量部を添加し、室温で30分間混合して、均一なペースト状コンパウンドを調製した。このコンパウンドに、粘度20mPa・sの分子鎖両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量=1.5質量%)3.5質量部(前記オルガノポリシロキサン混合物中のビニル基1モルに対して、本メチルハイドロジェンポリシロキサン中のケイ素原子結合水素原子が1.4モルとなる量)、式:
式:(CH3)3SiO1/2で示されるシロキサン単位と式:(CH3)2(CH2=CH)SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(ビニル基の含有量=2.01質量%)35質量部と粘度40,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.08質量%)65質量部からなるオルガノポリシロキサン混合物に、平均粒子径が2μm、平均凝集粒子径が15μmであり、タイプAデュロメータ硬さが30である球状シリコーンゴム粒子20質量部を添加し、室温で30分間混合して、均一なペースト状コンパウンドを調製した。このコンパウンドに、粘度20mPa・sの分子鎖両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量=1.5質量%)3.5質量部(前記オルガノポリシロキサン混合物中のビニル基1モルに対して、本メチルハイドロジェンポリシロキサン中のケイ素原子結合水素原子が1.9モルとなる量)、式:
実施例1において、式:(CH3)3SiO1/2で示されるシロキサン単位と式:(CH3)2(CH2=CH)SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(ビニル基の含有量=2.01質量%)40質量部と粘度2,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.23質量%)60質量部からなるオルガノポリシロキサン混合物100質量部の代わりに、粘度2,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.23質量%)100質量部を用い、粘度20mPa・sの分子鎖両末端トリメチルシロキシ基封鎖メチルハイドロジェンポリシロキサン(ケイ素原子結合水素原子の含有量=1.5質量%)0.9質量部(前記ジメチルポリシロキサン中のビニル基1モルに対して、本メチルハイドロジェンポリシロキサン中のケイ素原子結合水素原子が1.6モルとなる量)とした以外は実施例1と同様にして絶縁性液状ダイボンディング剤を調製した。このダイボンディング剤の特性、およびこれを用いて作製した半導体装置の特性を上記の通り評価し、それらの結果を表1に示した。
比較例1において、球状シリコーンゴム粒子の配合量を60質量部とした以外は比較例1と同様にして絶縁性液状ダイボンディング剤を調製した。このダイボンディング剤の特性、およびこれを用いて作製した半導体装置の特性を上記の通り評価し、それらの結果を表1に示した。
実施例1において、式:(CH3)3SiO1/2で示されるシロキサン単位と式:(CH3)2(CH2=CH)SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(ビニル基の含有量=2.01質量%)を70質量部とし、粘度2,000mPa・sの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン(ビニル基の含有量=0.23質量%)30質量部としたオルガノポリシロキサン混合物を調製しようとしたが、均一な混合物を調製することができず、均一なダイボンディング剤を調製するには至らなかった。
2 ポリイミドフィルム製の回路基板
3 絶縁性液状ダイボンディング剤の硬化物
4 ボンディングパッド
5 ボンディングパッド
6 金製のボンディングワイヤ
Claims (3)
- 半導体チップのアクティブ面と該半導体チップ取り付け部材を接合するための、
(A)(a−1)式:R1 3SiO1/2で示されるシロキサン単位と式:R1 2R2SiO1/2で示されるシロキサン単位と式:SiO4/2で示されるシロキサン単位からなるオルガノポリシロキサンレジン(式中、R1はアルケニル基以外の一価炭化水素基であり、R2はアルケニル基である。)と(a−2)一分子中に少なくとも2個のアルケニル基を有する直鎖状オルガノポリシロキサンの混合物{但し、(a−1)成分と(a−2)成分の質量比は30:70〜60:40である。} 100質量部、
(B)一分子中に少なくとも2個のケイ素原子結合水素原子を有するオルガノポリシロキサン{(B)成分の含有量は、(A)成分中のアルケニル基1モルに対して、本成分中のケイ素原子結合水素原子が0.1〜10モルとなる量である。}、
(C)ケイ素原子結合アルコキシ基を有する有機ケイ素化合物 0.1〜10質量部、
(D)平均粒子径が0.1〜50μmであり、JIS K 6253に規定のタイプAデュロメータ硬さが80以下である絶縁性球状シリコーンゴム粒子 5〜50質量部、
および
(E)ヒドロシリル化反応用触媒 触媒量
から少なくともなる絶縁性液状ダイボンディング剤。 - 25℃における粘度が100〜500Pa・sである、請求項1記載の絶縁性液状ダイボンディング剤。
- 半導体チップのアクティブ面と該半導体チップ取り付け部材が請求項1または2に記載の絶縁性液状ダイボンディング剤により接合されてなる半導体装置。
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JP4647941B2 (ja) | 2004-06-23 | 2011-03-09 | 東レ・ダウコーニング株式会社 | シリコーンレジンとシリコーンゴムの一体化成形体、その製造方法および硬化性シリコーンレジン組成物 |
JP4664032B2 (ja) | 2004-10-13 | 2011-04-06 | 東レ・ダウコーニング株式会社 | シリルアルコキシメチルハライドの製造方法 |
JP4528613B2 (ja) | 2004-12-27 | 2010-08-18 | 東レ・ダウコーニング株式会社 | シリコーン樹脂とエポキシ樹脂の接着複合体およびその製造方法 |
JP4849814B2 (ja) | 2005-03-29 | 2012-01-11 | 東レ・ダウコーニング株式会社 | ホットメルト型シリコーン系接着剤 |
JP5025917B2 (ja) | 2005-06-15 | 2012-09-12 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン組成物 |
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US20090263936A1 (en) | 2009-10-22 |
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CN101253246B (zh) | 2011-06-22 |
EP1920007B1 (en) | 2013-06-05 |
TW200710193A (en) | 2007-03-16 |
WO2007026727A1 (en) | 2007-03-08 |
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CN101253246A (zh) | 2008-08-27 |
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