JP5648290B2 - 電子装置およびその製造方法 - Google Patents
電子装置およびその製造方法 Download PDFInfo
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- JP5648290B2 JP5648290B2 JP2010016844A JP2010016844A JP5648290B2 JP 5648290 B2 JP5648290 B2 JP 5648290B2 JP 2010016844 A JP2010016844 A JP 2010016844A JP 2010016844 A JP2010016844 A JP 2010016844A JP 5648290 B2 JP5648290 B2 JP 5648290B2
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- silicone adhesive
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- -1 cyclic siloxane Chemical class 0.000 claims description 104
- 239000013464 silicone adhesive Substances 0.000 claims description 73
- 239000000203 mixture Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 50
- 238000010438 heat treatment Methods 0.000 claims description 32
- 229920001296 polysiloxane Polymers 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229920005989 resin Polymers 0.000 claims description 27
- 239000011347 resin Substances 0.000 claims description 27
- 125000003342 alkenyl group Chemical group 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
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- 125000003545 alkoxy group Chemical group 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
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- 238000002156 mixing Methods 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 12
- 239000011231 conductive filler Substances 0.000 claims description 10
- 238000013329 compounding Methods 0.000 claims description 8
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 230000004580 weight loss Effects 0.000 claims description 7
- 239000007809 chemical reaction catalyst Substances 0.000 claims description 6
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 239000002318 adhesion promoter Substances 0.000 claims description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 41
- 239000007789 gas Substances 0.000 description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 229920002379 silicone rubber Polymers 0.000 description 18
- 239000004945 silicone rubber Substances 0.000 description 18
- 239000004205 dimethyl polysiloxane Substances 0.000 description 16
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 16
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 16
- 229920001577 copolymer Polymers 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 12
- 238000009835 boiling Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 125000000217 alkyl group Chemical group 0.000 description 8
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 7
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 229920006122 polyamide resin Polymers 0.000 description 6
- 239000012756 surface treatment agent Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 125000005372 silanol group Chemical group 0.000 description 5
- 125000003944 tolyl group Chemical group 0.000 description 5
- 229910004283 SiO 4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 4
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 4
- 125000000962 organic group Chemical group 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- 125000005023 xylyl group Chemical group 0.000 description 4
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000006038 hexenyl group Chemical group 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical group [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 241000209149 Zea Species 0.000 description 2
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 235000005822 corn Nutrition 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N trimethylsilyl-trifluoromethansulfonate Natural products C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- HMVBQEAJQVQOTI-SOFGYWHQSA-N (e)-3,5-dimethylhex-3-en-1-yne Chemical compound CC(C)\C=C(/C)C#C HMVBQEAJQVQOTI-SOFGYWHQSA-N 0.000 description 1
- GRGVQLWQXHFRHO-AATRIKPKSA-N (e)-3-methylpent-3-en-1-yne Chemical compound C\C=C(/C)C#C GRGVQLWQXHFRHO-AATRIKPKSA-N 0.000 description 1
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 1
- KSLSOBUAIFEGLT-UHFFFAOYSA-N 2-phenylbut-3-yn-2-ol Chemical compound C#CC(O)(C)C1=CC=CC=C1 KSLSOBUAIFEGLT-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- PFRLCKFENIXNMM-UHFFFAOYSA-N 3-trimethylsilylpropan-1-amine Chemical compound C[Si](C)(C)CCCN PFRLCKFENIXNMM-UHFFFAOYSA-N 0.000 description 1
- RYUYSSZLUKUHNY-UHFFFAOYSA-N C(C1CO1)OC1=C(NC=C1)[Si](OC)(OC)OC Chemical compound C(C1CO1)OC1=C(NC=C1)[Si](OC)(OC)OC RYUYSSZLUKUHNY-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- 229910016525 CuMo Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
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Description
シリコーン接着剤(30)として、
A成分としての、1分子中に少なくとも2個のアルケニル基を有し、ケイ素原子に結合した水酸基とアルコキシ基を有さない、4量体から20量体までの環状シロキサンの含有量が0.1質量%以下であるオルガノポリシロキサンを100質量部と、
B成分として、1分子中に少なくとも2個のケイ素原子結合水素原子を有し、アルケニル基、ケイ素原子に結合した水酸基とアルコキシ基を有さないオルガノポリシロキサンと、
C成分として、接着性付与剤を少なくとも0.05質量部と、
D成分として、熱伝導性充填剤を200〜2000質量部と、
E成分として、ヒドロシリル化反応用触媒とを含み、
かつ、B成分の配合量が、A成分中のアルケニル基1モルに対して、ケイ素原子結合水素原子が0.5〜10モルとなる量であり、
さらに、B成分とC成分の合計量が、A成分とB成分とC成分の合計量に対して、0.5〜10質量%であって、
D成分としての熱伝導性充填剤が、A成分とD成分の混合物中にメチルトリメトキシシランを配合してD成分の表面を処理する方法により表面処理された酸化アルミニウム粉末であるものを用いたことを特徴とする。
シリコーン接着剤(30)として、
A成分としての、1分子中に少なくとも2個のアルケニル基を有し、ケイ素原子に結合した水酸基とアルコキシ基を有さない、4量体から20量体までの環状シロキサンの含有量が0.1質量%以下であるオルガノポリシロキサンを100質量部と、
B成分として、1分子中に少なくとも2個のケイ素原子結合水素原子を有し、アルケニル基、ケイ素原子に結合した水酸基とアルコキシ基を有さないオルガノポリシロキサンと、
C成分として、接着性付与剤を少なくとも0.05質量部と、
D成分として、熱伝導性充填剤を200〜2000質量部と、
E成分として、ヒドロシリル化反応用触媒とを含み、
かつ、B成分の配合量が、A成分中のアルケニル基1モルに対して、ケイ素原子結合水素原子が0.5〜10モルとなる量であり、
さらに、B成分とC成分の合計量が、A成分とB成分とC成分の合計量に対して、0.5〜10質量%であって、
D成分としての熱伝導性充填剤が、A成分とD成分の混合物中にメチルトリメトキシシランを配合してD成分の表面を処理する方法により表面処理された酸化アルミニウム粉末であるものを用い、
シリコーン接着剤(30)の加熱・硬化を真空中、もしくは、排気環境中で行うことを特徴とする。
図1は、本発明の第1実施形態に係る電子装置の概略断面構成を示す図である。本実施形態の電子装置は、大きくは、ヒートシンク10の一面(図1中の上面)上に、シリコーン接着剤30を介して基板20が搭載されたものである。
図3は、本発明の第2実施形態に係る電子装置の要部の概略断面構成を示す図である。本実施形態の電子装置では、基板20の表面に搭載されたICチップ41が、フリップチップボンディングにより基板20と接続されているところが、上記第1実施形態との主たる相違点である。
図4は、本発明の第3実施形態に係る電子装置の概略断面構成を示す図である。本電子装置は、上記図1に示される電子装置の構成において、リードフレームよりなるヒートシンク10の他面側に、例えば、シリコーン樹脂、エポキシ樹脂などを主成分とする絶縁性の放熱シート70を設けたものである。それ以外の構成については、上記図1の構成と同様である。
図5は、本発明の第4実施形態に係る電子装置の概略断面構成を示す図である。本実施形態では、第1の部材として、アルミなどの金属製の筐体80を有し、この筺体80には、第2の部材として、放熱を有するICチップなどよりなる電子部品41が、上記各実施形態と同様のシリコーン接着剤30を介して接着されている。
なお、上記各実施形態のシリコーン接着剤30は、セラミック振動子などの圧電素子や、加速度センサや角速度センサなどに用いられる静電素子を、基板などに接着する場合においても、適用が可能である。この場合も、シロキサンガスの発生量が極力低減されるので、圧電素子や静電素子にシロキサンガスが付着することによる当該素子の特性変動の回避などの効果が期待される。
[オルガノポリシロキサン中の4量体〜20量体の環状シロキサンの含有量]
オルガノポリシロキサン中の4量体〜20量体の環状シロキサンをアセトンにより抽出した後、その抽出量をガスクロマトグラフのFID法により測定した。この抽出量から、オルガノポリシロキサン中の環状シロキサンの含有量を求めた。
[加熱減量]
アルミ製カップに約5gの熱伝導性シリコーンゴム組成物を採り、該組成物の質量を小数点以下第4位までの精秤した後、このアルミ製カップを150℃の熱風循環式オーブン中で17時間加熱して、該組成物を硬化させる。その後、室温で30分間放冷し、シリコーンゴムの質量を小数点以下第4位までの精秤し、加熱減量(%)を求める。なお、組成物の硬化は、所定時間内、例えば、1時間未満で完了するが、安定した測定結果が得られるように、ここでは、加熱時間を17時間としている。
[実施例1]
ロスミキサーにより、粘度2,000mPa・s、4量体〜20量体の環状シロキサンの含有量200ppmの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン100質量部、メチルトリメトキシシラン4.3質量部、および平均粒子径2.7μmの不定形状酸化アルミニウム微粒子330質量部を室温で混合した。その後、減圧下、150℃で1時間加熱混合してシリコーンゴムベースを調製した。
[実施例2]
ロスミキサーにより、粘度2,000mPa・s、4量体〜20量体の環状シロキサンの含有量200ppmの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン100質量部、メチルトリメトキシシラン4.3質量部、および平均粒子径2.7μmの不定形状酸化アルミニウム微粒子330質量部を室温で混合した。その後、減圧下、150℃で1時間加熱混合してシリコーンゴムベースを調製した。
[比較例1]
ロスミキサーにより、粘度9,000mPa・s、4量体〜20量体の環状シロキサンの含有量10ppmの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン70質量部、粘度2,000mPa・s、4量体〜20量体の環状シロキサンの含有量13,000ppmの分子鎖両末端ジメチルビニルシロキシ基封鎖ジメチルポリシロキサン30質量部、メチルトリメトキシシラン4質量部、および平均粒子径2.7μmの不定形状酸化アルミニウム微粒子310質量部を室温で混合した。その後、減圧下、150℃で1時間加熱混合してシリコーンゴムベースを調製した。
20 第2の部材としての基板
30 シリコーン接着剤
43 導電性接合材
60 モールド樹脂
80 第1の部材としての筺体
81 モータ部品
82 スイッチ部品
Claims (9)
- 第1の部材(10、80)と第2の部材(20)とがシリコーン接着剤(30)を介して接着されてなる電子装置であって、
前記シリコーン接着剤(30)として、
A成分としての、1分子中に少なくとも2個のアルケニル基を有し、ケイ素原子に結合した水酸基とアルコキシ基を有さない、4量体から20量体までの環状シロキサンの含有量が0.1質量%以下であるオルガノポリシロキサンを100質量部と、
B成分として、1分子中に少なくとも2個のケイ素原子結合水素原子を有し、アルケニル基、ケイ素原子に結合した水酸基とアルコキシ基を有さないオルガノポリシロキサンと、
C成分として、接着性付与剤を少なくとも0.05質量部と、
D成分として、熱伝導性充填剤を200〜2000質量部と、
E成分として、ヒドロシリル化反応用触媒とを含み、
かつ、前記B成分の配合量が、前記A成分中のアルケニル基1モルに対して、ケイ素原子結合水素原子が0.5〜10モルとなる量であり、
さらに、前記B成分と前記C成分の合計量が、前記A成分と前記B成分と前記C成分の合計量に対して、0.5〜10質量%であって、
前記D成分としての熱伝導性充填剤が、前記A成分と前記D成分の混合物中にメチルトリメトキシシランを配合して前記D成分の表面を処理する方法により表面処理された酸化アルミニウム粉末であるものを用いたことを特徴とする電子装置。 - 前記シリコーン接着剤(30)は、当該シリコーン接着剤(30)を150℃、17時間で加熱・硬化したとき、当該加熱前の質量に対する当該加熱後の質量の減量分が、0.1質量%以下となるものであることを特徴とする請求項1に記載の電子装置。
- モールド樹脂(60)による封止構造を有することを特徴とする請求項1または2に記載の電子装置。
- ワイヤボンディングによる接続構造を有することを特徴とする請求項1ないし3のいずれか1つに記載の電子装置。
- フリップチップボンディングによる接続構造を有することを特徴とする請求項1ないし4のいずれか1つに記載の電子装置。
- 導電性ペーストまたは半田よりなる導電性接合材(43)による接続構造を有することを特徴とする請求項1ないし5のいずれか1つに記載の電子装置。
- 前記第2の部材は、一方の板面を表面、他方の板面を裏面とする基板(20)であり、
前記基板(20)の裏面に前記シリコーン接着剤(30)が配置されて、前記基板(20)の裏面と前記第1の部材(10)とが接着されているものであり、
前記基板(20)の表面と裏面との間に位置する側面において、前記シリコーン接着剤(30)の当該裏面から当該表面側への這い上がりが前記基板(20)の厚さ寸法の1/2以下となっていることを特徴とする請求項1ないし6のいずれか1つに記載の電子装置。 - 前記第1の部材(80)には、前記第2の部材(10)の他に、電気接点を有するモータ部品(81)およびスイッチ部品(82)が搭載されていることを特徴とする請求項1に記載の電子装置。
- 第1の部材(10、80)と第2の部材(20)とを、シリコーン接着剤(30)を貼り合わせ、前記シリコーン接着剤(30)を加熱・硬化して接着してなる電子装置の製造方法であって、
前記シリコーン接着剤(30)として、
A成分としての、1分子中に少なくとも2個のアルケニル基を有し、ケイ素原子に結合した水酸基とアルコキシ基を有さない、4量体から20量体までの環状シロキサンの含有量が0.1質量%以下であるオルガノポリシロキサンを100質量部と、
B成分として、1分子中に少なくとも2個のケイ素原子結合水素原子を有し、アルケニル基、ケイ素原子に結合した水酸基とアルコキシ基を有さないオルガノポリシロキサンと、
C成分として、接着性付与剤を少なくとも0.05質量部と、
D成分として、熱伝導性充填剤を200〜2000質量部と、
E成分として、ヒドロシリル化反応用触媒とを含み、
かつ、前記B成分の配合量が、前記A成分中のアルケニル基1モルに対して、ケイ素原子結合水素原子が0.5〜10モルとなる量であり、
さらに、前記B成分と前記C成分の合計量が、前記A成分と前記B成分と前記C成分の合計量に対して、0.5〜10質量%であって、
前記D成分としての熱伝導性充填剤が、前記A成分と前記D成分の混合物中にメチルトリメトキシシランを配合して前記D成分の表面を処理する方法により表面処理された酸化アルミニウム粉末であるものを用い、
前記シリコーン接着剤(30)の加熱・硬化を真空中、もしくは、排気環境中で行うことを特徴とする電子装置の製造方法。
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