JP4780939B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP4780939B2 JP4780939B2 JP2004219779A JP2004219779A JP4780939B2 JP 4780939 B2 JP4780939 B2 JP 4780939B2 JP 2004219779 A JP2004219779 A JP 2004219779A JP 2004219779 A JP2004219779 A JP 2004219779A JP 4780939 B2 JP4780939 B2 JP 4780939B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- light
- emitting device
- insulating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
なることが望ましい。
制し、しかも、熱を比較的迅速に装置外に放出することができるとともに、発光装置の発する光を効率よく利用することができるのである。
量%、特に35〜55質量%の割合で含有することが重要であり、これによって、低温焼成セラミックスの熱膨張係数を高めることができる。
た。
置25となる。また、絶縁基体1並びに枠体13の熱伝導率が高いため、発光素子21からの発熱を速やかに放出することができ、発熱による輝度低下を抑制できる。
シートにおける貫通孔形成部分を金属シートから押圧することによって、金属シートの一部を貫通孔内に埋め込み、セラミックグリーンシートと金属シートとを一体化して、貫通金属体となる金属シートをセラミックグリーンシートに埋め込んだ。
3・・・接続端子
5・・・外部電極端子
7・・・貫通導体
10・・・貫通金属体
11・・・発光素子用配線基板
13・・・枠体
13a・・・枠体の内壁面
21・・・発光素子
25・・・発光装置
31・・・モールド材
Claims (7)
- 低温焼成セラミックスからなる平板状の絶縁基体と該絶縁基体の表面又は内部のうち少なくとも一方に形成された導体層と前記絶縁基体の一方の主面に設けられた発光素子を搭載する搭載部とを有する発光素子用配線基板と、
該発光素子用配線基板の前記搭載部に搭載された発光素子と、を具備してなり、
前記搭載部の直下に前記絶縁基体を貫通して設けられ、Cu、Ag、Auのうち少なくとも1種を主成分とし、前記絶縁基体よりも高い熱伝導率を有し、前記発光素子の搭載面積以上の断面積を有する塊状の貫通金属体が、前記絶縁基体と同時焼成されてなるとともに、前記発光素子用配線基板の主面に形成された前記絶縁基体と前記貫通金属体との境界が、金属を主成分とする被覆層により被覆されていることを特徴とする発光装置。 - 前記貫通金属体が、少なくとも金属材料とセラミック材料との複合体であることを特徴とする請求項1に記載の発光装置。
- 前記貫通金属体が、少なくとも電気回路の一部を形成してなることを特徴とする請求項1又は2に記載の発光装置。
- 前記貫通金属体の少なくとも一方の端面が絶縁膜で覆われていることを特徴とする請求項1乃至3のうちいずれかに記載の発光装置。
- 前記絶縁基体の40〜400℃における熱膨張係数が9〜18×10−6/℃であることを特徴とする請求項1乃至4のうちいずれかに記載の発光装置。
- 前記導体層がCu、Ag、Auのうち少なくとも1種を主成分とすることを特徴とする請求項1乃至5のうちいずれかに記載の発光装置。
- 前記発光素子用配線基板の搭載部が形成された側の主面に、前記発光素子を収容するための枠体が形成されてなることを特徴とする請求項1乃至6のうちいずれかに記載の発光装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004219779A JP4780939B2 (ja) | 2004-07-28 | 2004-07-28 | 発光装置 |
PCT/JP2005/006727 WO2005106973A1 (ja) | 2004-04-27 | 2005-03-30 | 発光素子用配線基板 |
US11/568,258 US20080043444A1 (en) | 2004-04-27 | 2005-03-30 | Wiring Board for Light-Emitting Element |
TW094110792A TW200541415A (en) | 2004-04-27 | 2005-04-06 | Wiring board for light emitting element |
US13/071,431 US8314346B2 (en) | 2004-04-27 | 2011-03-24 | Wiring board for light-emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004219779A JP4780939B2 (ja) | 2004-07-28 | 2004-07-28 | 発光装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010290343A Division JP2011071554A (ja) | 2010-12-27 | 2010-12-27 | 発光素子用配線基板ならびに発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006041230A JP2006041230A (ja) | 2006-02-09 |
JP4780939B2 true JP4780939B2 (ja) | 2011-09-28 |
Family
ID=35905899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004219779A Expired - Fee Related JP4780939B2 (ja) | 2004-04-27 | 2004-07-28 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4780939B2 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100828891B1 (ko) | 2006-02-23 | 2008-05-09 | 엘지이노텍 주식회사 | Led 패키지 |
KR100780196B1 (ko) | 2006-02-27 | 2007-11-27 | 삼성전기주식회사 | 발광다이오드 패키지, 발광다이오드 패키지용 회로기판 및그 제조방법 |
JP2007234846A (ja) * | 2006-03-01 | 2007-09-13 | Ngk Spark Plug Co Ltd | 発光素子用セラミックパッケージ |
KR100759016B1 (ko) | 2006-06-30 | 2007-09-17 | 서울반도체 주식회사 | 발광 다이오드 |
KR100889512B1 (ko) * | 2007-05-28 | 2009-03-19 | 한국광기술원 | 열전달 비아홀을 구비한 발광 다이오드 패키지 및 그의제조방법 |
WO2009008210A1 (ja) * | 2007-07-11 | 2009-01-15 | C.I. Kasei Company, Limited | 発光装置 |
EP2267799A1 (en) | 2008-04-18 | 2010-12-29 | Asahi Glass Company, Limited | Light-emitting diode package |
CN101937889A (zh) | 2009-06-29 | 2011-01-05 | 鸿富锦精密工业(深圳)有限公司 | 半导体元件封装结构及其封装方法 |
TWI460832B (zh) * | 2009-07-21 | 2014-11-11 | Hon Hai Prec Ind Co Ltd | 半導體元件封裝結構及其封裝方法 |
TWI403005B (zh) * | 2009-10-12 | 2013-07-21 | Intematix Technology Ct Corp | 發光二極體及其製作方法 |
CN102640310A (zh) | 2009-11-13 | 2012-08-15 | 旭硝子株式会社 | 发光元件用基板及发光装置 |
JP5640632B2 (ja) | 2010-03-12 | 2014-12-17 | 旭硝子株式会社 | 発光装置 |
CN102201524A (zh) | 2010-03-24 | 2011-09-28 | 旭硝子株式会社 | 发光元件用基板及发光装置 |
KR101847938B1 (ko) | 2011-03-14 | 2018-04-13 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조 방법 |
JP6567305B2 (ja) * | 2015-03-20 | 2019-08-28 | Agc株式会社 | Led光源 |
JP7278167B2 (ja) * | 2019-07-31 | 2023-05-19 | 三菱電機株式会社 | 配線基板、半導体装置、及び配線基板の製造方法 |
CN114747301B (zh) | 2019-11-14 | 2024-06-04 | 株式会社村田制作所 | 电路基板以及电路基板的制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2699581B2 (ja) * | 1989-10-03 | 1998-01-19 | 富士通株式会社 | 窒化アルミニウム基板のビア形成方法 |
JPH03272197A (ja) * | 1990-03-22 | 1991-12-03 | Fujitsu Ltd | 多層ガラスセラミック回路基板の製造方法 |
JPH06237081A (ja) * | 1993-02-10 | 1994-08-23 | Matsushita Electric Ind Co Ltd | 多層セラミック基板の製造方法 |
JPH09153679A (ja) * | 1995-11-30 | 1997-06-10 | Kyocera Corp | 積層ガラスセラミック回路基板 |
JP2002198660A (ja) * | 2000-12-27 | 2002-07-12 | Kyocera Corp | 回路基板及びその製造方法 |
JP3783572B2 (ja) * | 2001-03-05 | 2006-06-07 | 日亜化学工業株式会社 | 発光装置 |
JP4055373B2 (ja) * | 2001-05-31 | 2008-03-05 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP4379769B2 (ja) * | 2002-03-04 | 2009-12-09 | 日立金属株式会社 | セラミック積層基板およびこれを用いたセラミック積層電子部品 |
JP4241184B2 (ja) * | 2002-07-25 | 2009-03-18 | パナソニック電工株式会社 | 光電素子部品 |
JP2004207678A (ja) * | 2002-10-30 | 2004-07-22 | Kyocera Corp | 発光素子収納用パッケージおよび発光装置 |
-
2004
- 2004-07-28 JP JP2004219779A patent/JP4780939B2/ja not_active Expired - Fee Related
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JP2006041230A (ja) | 2006-02-09 |
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