JP4777141B2 - 光抽出効率が改善された垂直構造窒化物半導体発光素子 - Google Patents
光抽出効率が改善された垂直構造窒化物半導体発光素子 Download PDFInfo
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- JP4777141B2 JP4777141B2 JP2006138871A JP2006138871A JP4777141B2 JP 4777141 B2 JP4777141 B2 JP 4777141B2 JP 2006138871 A JP2006138871 A JP 2006138871A JP 2006138871 A JP2006138871 A JP 2006138871A JP 4777141 B2 JP4777141 B2 JP 4777141B2
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- nitride semiconductor
- emitting device
- light emitting
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- 150000004767 nitrides Chemical class 0.000 title claims description 81
- 239000004065 semiconductor Substances 0.000 title claims description 63
- 238000000605 extraction Methods 0.000 title description 25
- 238000000149 argon plasma sintering Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010980 sapphire Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- -1 LiGaO 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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- Power Engineering (AREA)
- Led Devices (AREA)
Description
34 第1導電型窒化物半導体層
35 活性層
36 第2導電型窒化物半導体層
37 伝導性光散乱層
39a、39b 第1及び第2電極
Claims (4)
- 光透過性を有する伝導性基板上に順次に形成された第1導電型窒化物半導体層、活性層及び第2導電型窒化物半導体層を含む垂直構造窒化物発光素子において、
前記伝導性基板の下面と前記発光素子の側面の少なくとも一部領域に形成され、光透過率が70%以上の伝導性物質からなり、その外部面に光を散乱させるための凸凹パターンが形成され、1.5〜2.4の範囲内の屈折率を有する物質からなる伝導性光散乱層と、
前記伝導性光散乱層が前記第2導電型窒化物層及び前記活性層と電気的に絶縁されるように、前記伝導性光散乱層の、前記発光素子の側面に延長された部分と、前記第2導電型窒化物層及び前記活性層との間に形成される絶縁層と、
を含み、
前記第2導電型窒化物層上面に形成された電極をさらに含み、前記電極は反射メタル層を含むことを特徴とする垂直構造窒化物半導体発光素子。 - 前記伝導性光散乱層はITO(Indium Tin Oxide)、SnO2、Ga2O3、ZnO、MgO及びIn2O3で構成されたグループから選択された物質を含むことを特徴とする請求項1に記載の垂直構造窒化物半導体発光素子。
- 前記伝導性光散乱層の凸凹パターン周期は0.001〜10μmの範囲内であることを特徴とする請求項1又は2に記載の垂直構造窒化物半導体発光素子。
- 前記反射メタル層はAg、Al、Rh、Ru、Pt、Au、Cu、Pd、Cr、Ni、Co、Ti、In及びMoで構成されたグループから選択された少なくとも1種の金属層または合金層からなることを特徴とする請求項1に記載の垂直構造窒化物半導体発光素子。
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KR10-2005-0042091 | 2005-05-19 | ||
KR1020050042091A KR100638819B1 (ko) | 2005-05-19 | 2005-05-19 | 광추출효율이 개선된 수직구조 질화물 반도체 발광소자 |
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