JP4733421B2 - Plasma processing method and plasma processing apparatus - Google Patents

Plasma processing method and plasma processing apparatus Download PDF

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JP4733421B2
JP4733421B2 JP2005135348A JP2005135348A JP4733421B2 JP 4733421 B2 JP4733421 B2 JP 4733421B2 JP 2005135348 A JP2005135348 A JP 2005135348A JP 2005135348 A JP2005135348 A JP 2005135348A JP 4733421 B2 JP4733421 B2 JP 4733421B2
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和良 岩根
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Sekisui Chemical Co Ltd
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本発明は、プラズマ処理方法及びプラズマ処理装置に関し、特に略常圧でプラズマ処理を行う場合に好適なプラズマ処理方法及びプラズマ処理装置に関する。   The present invention relates to a plasma processing method and a plasma processing apparatus, and more particularly to a plasma processing method and a plasma processing apparatus suitable for performing plasma processing at substantially normal pressure.

従来、大気圧近傍の圧力下で発生させたプラズマを被処理物に吹き付け、被処理物の表面を処理する常圧プラズマ処理方法が種々提案されている。   Conventionally, various atmospheric pressure plasma processing methods have been proposed in which plasma generated under a pressure near atmospheric pressure is sprayed on an object to be processed to treat the surface of the object to be processed.

このような方法を特定のガス雰囲気下で行うには、外気が遮断された密閉容器内で処理を行う必要がある。これに対し、例えばグロー放電を利用することにより、開放系、あるいは、気体の自由な流出を防ぐ程度の低気密系での処理が提案されている（例えば、特許文献１参照）。
特開２００２−１５５３７０号公報 In order to perform such a method under a specific gas atmosphere, it is necessary to perform the treatment in a sealed container in which the outside air is blocked. On the other hand, for example, processing using an open system or a low airtight system that prevents free outflow of gas by using glow discharge has been proposed (for example, see Patent Document 1).
JP 2002-155370 A

しかし、開放系、あるいは低気密系の常圧プロセスでは、周囲に酸素や窒素を含む空気があるため、プラズマ処理開始前には、図１（ａ）及び図２（ａ）に示すように、電極対８０，９０の空間８４，９４には、周囲の空気を含む気体８７，９７が存在する。この状態からプラズマ処理を開始し、電極対８０，９０に電圧を印加して放電を発生させるとともに、図１（ｂ）及び図２（ｂ）において矢印８６，９６で示すように処理ガス８８，９８を電極対８０，９０の空間８４，９４に供給すると、しばらくの間、電極対８０，９０の開口８５，９５からは、処理ガス８８，９８により空間８４，９４から押し出された気体８７，９７や、この気体８７，９７を含む処理ガスが流れ出し、図１（ｂ）において矢印８３で示すように搬送装置８１により搬送された被処理部材８２や、図２（ｂ）に示すように電極対９０の開口９５に隣接して配置された被処理部材９１の穴内面９２に接触する。空気８７，９７は被処理部材８２，９１に対しては所望のプラズマ処理を行うことができないため、被処理部材８２、９１には、プラズマ処理されていない部分や、プラズマ処理が不十分な部分など、処理ムラが生じ、処理不良の発生の原因となる。   However, in the open pressure or low airtight atmospheric pressure process, there is air containing oxygen and nitrogen in the surroundings, so before starting the plasma treatment, as shown in FIGS. 1 (a) and 2 (a), Gases 87 and 97 containing ambient air exist in the spaces 84 and 94 of the electrode pairs 80 and 90. In this state, plasma processing is started, and a voltage is applied to the electrode pairs 80 and 90 to generate a discharge. Also, as shown by arrows 86 and 96 in FIG. 1B and FIG. When 98 is supplied to the spaces 84, 94 of the electrode pairs 80, 90, the gas 87, pushed out from the spaces 84, 94 by the processing gases 88, 98 from the openings 85, 95 of the electrode pairs 80, 90 for a while. 97, a processing gas containing the gas 87, 97 flows out, and the member 82 to be processed conveyed by the conveying device 81 as shown by an arrow 83 in FIG. 1B, or the electrode as shown in FIG. It contacts the hole inner surface 92 of the member 91 to be processed disposed adjacent to the opening 95 of the pair 90. Since the air 87 and 97 cannot perform the desired plasma processing on the members 82 and 91, the members 82 and 91 are not subjected to the plasma processing or the portions where the plasma processing is insufficient. For example, processing unevenness may occur and cause processing failure.

本発明は、かかる実情に鑑み、品質が安定したプラズマ処理を行うことができる、プラズマ処理方法及びプラズマ処理装置を提供しようとするものである。   In view of such circumstances, the present invention intends to provide a plasma processing method and a plasma processing apparatus capable of performing plasma processing with stable quality.

本発明は、上記課題を解決するために、以下のように構成したプラズマ処理方法を提供する。   In order to solve the above-described problems, the present invention provides a plasma processing method configured as follows.

プラズマ処理方法は、対向する電極に電圧を印加し、該電極の間の空間（以下、「電極対間」という。）で放電を発生させ、該電極対間を通過させてプラズマ化させた処理ガスを被処理物に接触させて該被処理物を処理するタイプの方法である。プラズマ処理方法は、第１ないし第３のステップを備える。前記第１のステップにおいて、前記電極対間に前記処理ガスを供給する。前記第２のステップにおいて、前記電極対間に残留している気体が前記処理ガスで完全に置換される前に、前記電極に電圧を印加することを開始して放電を発生させ、前記電極対間を通過する前記処理ガスをプラズマ化させるとともに、前記電極に電圧を印加したときに流れる電流の電流値を検出する。前記第３のステップにおいて、検出した前記電流値の大きさから、前記電極対間に残留している前記気体が前記処理ガスで置換された程度を検出し、検出した前記電流値がしきい値より小さくなったとき、あるいは、検出した前記電流値の変化率がしきい値より小さくなったとき、前記電極対間に残留している前記気体を前記処理ガスで置換したと判断して、前記電極対間を通過してプラズマ化された前記処理ガスを前記被処理物に接触させる。 In the plasma processing method, a voltage is applied to opposing electrodes, discharge is generated in a space between the electrodes (hereinafter referred to as “between electrode pairs”), and plasma is generated by passing between the electrode pairs. This is a type of method in which a gas is brought into contact with an object to be processed and the object to be processed is processed. The plasma processing method includes first to third steps. In the first step, the processing gas is supplied between the electrode pairs. In the second step, before the gas remaining between the electrode pair is completely replaced with the processing gas, a voltage is started to be applied to the electrode to generate a discharge, and the electrode pair The processing gas passing between them is turned into plasma, and a current value of a current that flows when a voltage is applied to the electrodes is detected. In the third step, the degree of replacement of the gas remaining between the electrode pair with the processing gas is detected from the detected magnitude of the current value , and the detected current value is a threshold value. when becomes smaller, or when the change rate of the detected said current value becomes smaller than the threshold value, it is judged that the gas remaining between the electrode pairs and replacement with the process gas, The processing gas that has been converted into plasma by passing between the electrode pairs is brought into contact with the object to be processed.

上記第１のステップにおいて、処理ガスは、プラズマ処理の目的に応じて選択すればよい。例えば、酸化処理には、窒素と酸素の混合ガスを用いる。還元処理には、窒素と水素を用いる。撥水化やエッチングには、フルオロカーボンを用いる。希釈ガスとして、窒素、アルゴン等の不活性ガスを用いてもよい。   In the first step, the processing gas may be selected according to the purpose of the plasma processing. For example, a mixed gas of nitrogen and oxygen is used for the oxidation treatment. Nitrogen and hydrogen are used for the reduction treatment. Fluorocarbon is used for water repellency and etching. An inert gas such as nitrogen or argon may be used as the dilution gas.

上記第２のステップにおいて、電極に例えば交流電圧やパルス電圧を印加することにより放電を発生させる。放電の形態は、グロー放電が均一処理のために好ましいが、コロナ放電や誘電体バリア放電や沿面放電であってもよい。   In the second step, a discharge is generated by applying, for example, an AC voltage or a pulse voltage to the electrodes. As the form of discharge, glow discharge is preferable for uniform treatment, but corona discharge, dielectric barrier discharge, and creeping discharge may be used.

上記第３のステップにおいて、放電を発生させた電極対間を通過する際にプラズマ化された処理ガス（現にプラズマ化している処理ガスであっても、プラズマを経て活性化した処理ガスであってもよい。）を被処理物に接触させることにより、放電よるプラズマ（活性種、イオンなど）を用いて被処理物の表面改質、アッシング、洗浄などのプラズマ処理を行う。   In the third step, the processing gas converted into plasma when passing between the pair of electrodes that generated the discharge (even if the processing gas is actually plasma, the processing gas is activated through the plasma. May be brought into contact with the object to be processed, and plasma processing such as surface modification, ashing, and cleaning of the object to be processed is performed using plasma (active species, ions, etc.) caused by discharge.

上記方法によれば、電極対間を処理ガスで置換した後にプラズマ化された処理ガスのみを被処理物に接触させ、電極対間に残留していた気体を含みプラズマ化が不十分な処理ガスが被処理物に接触することを防ぐことができる。したがって、十分にプラズマ化された処理ガスのみを被処理物に接触させることにより、プラズマ処理の品質の安定化を図ることができる。   According to the above method, only the processing gas that has been converted to plasma after replacing the electrode pair with the processing gas is brought into contact with the object to be processed, and the processing gas that includes the gas remaining between the electrode pair and is insufficiently plasmad Can be prevented from contacting the workpiece. Therefore, it is possible to stabilize the quality of the plasma processing by bringing only the processing gas that has been made sufficiently plasma into contact with the object to be processed.

また、電極対間の空間に残留していた空気が処理ガスで置換される時間を予測して予め定めた時間の経過にしたがって制御する場合などよりも、精度よく、かつ効率よく制御することができる。 In addition , it is possible to perform control with higher accuracy and efficiency than in the case where the time in which the air remaining in the space between the electrode pairs is replaced with the processing gas is predicted and controlled according to the passage of a predetermined time. it can.

また、電極に電圧を印加しながら、電極対間における処理ガスの置換を検出することができる。電極対間から流出する気体のガス濃度を検出する場合や、電極対間の放電のスペクトルを分析したりする場合などよりも、簡単かつ容易に、電極対間における処理ガスの置換を検出することができる。 Further , it is possible to detect the replacement of the processing gas between the electrode pair while applying a voltage to the electrodes. Detecting process gas substitution between electrode pairs more easily and easily than when detecting the gas concentration of gas flowing out between electrode pairs or analyzing the discharge spectrum between electrode pairs Can do.

また、本発明は上記課題を解決するために、以下のように構成したプラズマ処理装置を提供する。   In order to solve the above-mentioned problems, the present invention provides a plasma processing apparatus configured as follows.

プラズマ処理装置は、ａ）対向する電極と、ｂ）前記電極に電圧を印加して、前記電極の間の空間（以下、「電極対間」という。）に放電を発生させる電源と、ｃ）前記電極対間に処理ガスを供給するガス供給部と、ｄ）前記電源が前記電極に電圧を印加したときに流れる電流の電流値を検出する検出部と、ｅ）前記電極対間を通過した前記処理ガスが流れ出る開口に対向する領域を横断するように被処理物を搬送する搬送装置と、ｆ）前記電極対間に前記処理ガスを供給し、前記電極対間に残留している気体が前記処理ガスで完全に置換される前に前記電極に電圧を印加することを開始して放電を発生させ、前記検出部により検出した前記電流値の大きさから、前記電極対間に残留している前記気体が前記処理ガスで置換された程度を検出し、検出した前記電流値がしきい値より小さくなったとき、あるいは、検出した前記電流値の変化率がしきい値より小さくなったとき、前記電極対間に残留している前記気体を前記処理ガスで置換したと判断して、前記電極対間を通過してプラズマ化された前記処理ガスを前記被処理物に接触させるように、前記電源及び前記ガス供給部と前記搬送装置とを制御する制御部とを備える。 The plasma processing apparatus includes: a) opposing electrodes; b) a power source that applies a voltage to the electrodes to generate a discharge in a space between the electrodes (hereinafter referred to as “between electrode pairs”); c) A gas supply unit for supplying a processing gas between the electrode pairs; d) a detection unit for detecting a current value of a current that flows when the power source applies a voltage to the electrodes; and e) between the electrode pairs. A transfer device that transfers an object to be processed so as to cross a region facing an opening through which the process gas flows out; f) a gas that supplies the process gas between the electrode pairs and remains between the electrode pairs; Before being completely replaced by the processing gas, a voltage is started to be applied to the electrodes to generate a discharge. From the magnitude of the current value detected by the detection unit, it remains between the electrode pairs. Detects the degree to which the gas is replaced by the processing gas When the current detected is smaller than the threshold value, or when the change rate of the detected said current value becomes smaller than the threshold value, the process the gas remaining between the electrode pairs it is determined that the replacement gas, the process gas into plasma by passing between the pair of electrodes so as to contact with the object to be processed, control and the power supply and the gas supply unit and the conveying device A control unit.

上記構成において、電極に例えば交流電圧やパルス電圧を印加することにより放電を発生させる。放電の形態は、グロー放電が均一処理のために好ましいが、コロナ放電や誘電体バリア放電や沿面放電であってもよい。放電を発生させた電極対間を通過する際にプラズマ化された処理ガス（現にプラズマ化している処理ガスであっても、プラズマを経て活性化した処理ガスであってもよい。）を被処理物に接触させることにより、放電よるプラズマ（活性種、イオンなど）を用いて被処理物の表面改質、アッシング、洗浄などのプラズマ処理を行う。処理ガスは、プラズマ処理の目的に応じて選択すればよい。例えば、酸化処理には、窒素と酸素の混合ガスを用いる。還元処理には、窒素と水素を用いる。撥水化やエッチングには、フルオロカーボンを用いる。希釈ガスとして、窒素、アルゴン等の不活性ガスを用いてもよい。   In the above configuration, discharge is generated by applying, for example, an AC voltage or a pulse voltage to the electrodes. As the form of discharge, glow discharge is preferable for uniform treatment, but corona discharge, dielectric barrier discharge, and creeping discharge may be used. A processing gas that is converted into plasma when passing between a pair of electrodes that have generated electric discharge (which may be a processing gas that is actually converted into plasma or a processing gas that is activated through plasma) may be processed. By contacting with an object, plasma processing such as surface modification, ashing, and cleaning of the object to be processed is performed using plasma (active species, ions, and the like) by discharge. The processing gas may be selected according to the purpose of the plasma processing. For example, a mixed gas of nitrogen and oxygen is used for the oxidation treatment. Nitrogen and hydrogen are used for the reduction treatment. Fluorocarbon is used for water repellency and etching. An inert gas such as nitrogen or argon may be used as the dilution gas.

上記構成によれば、電極対間を処理ガスで置換した後にプラズマ化された処理ガスのみを被処理物に接触させ、電極対間に残留していた気体を含みプラズマ化が不十分な処理ガスが被処理物に接触することを防ぐことができる。したがって、十分にプラズマ化された処理ガスのみを被処理物に接触させることにより、プラズマ処理の品質の安定化を図ることができる。   According to the above configuration, only the processing gas that has been converted to plasma after replacing the electrode pair with the processing gas is brought into contact with the object to be processed, and the processing gas that includes the gas remaining between the electrode pair and is insufficiently plasmad Can be prevented from contacting the workpiece. Therefore, it is possible to stabilize the quality of the plasma processing by bringing only the processing gas that has been made sufficiently plasma into contact with the object to be processed.

また、電極対間の空間に残留していた空気等の気体が処理ガスで置換される時間を予測して予め定めた時間の経過にしたがって制御する場合などよりも、精度よく、かつ効率よく制御することができる。 Also , more accurate and efficient control than when predicting the time when the gas such as air remaining in the space between the electrode pair is replaced with the processing gas and controlling according to the passage of a predetermined time, etc. can do.

また、電極に電圧を印加しながら、電極対間における処理ガスの置換を検出することができる。電極対間から流出する気体のガス濃度を検出する場合や、電極対間の放電のスペクトルを分析したりする場合などよりも、簡単かつ容易に、電極対間における処理ガスの置換を検出することができる。 Further , it is possible to detect the replacement of the processing gas between the electrode pair while applying a voltage to the electrodes. Detecting process gas substitution between electrode pairs more easily and easily than when detecting the gas concentration of gas flowing out between electrode pairs or analyzing the discharge spectrum between electrode pairs Can do.

なお、本発明のプラズマ処理方法及びプラズマ処理装置は、１Ｐａ以上、特に略常圧（大気圧近傍）の開放系、あるいは低気密系の場合に特に好適であるが、これに限るものではない。本発明において、略常圧とは、１．０１３×１０４〜５０．６６３×１０４Ｐａの範囲を言い、圧力調整の容易化や装置構成の簡略化を考慮すると、１．３３３×１０４〜１０．６６４×１０４Ｐａが好ましく、９．３３１×１０４〜１０．３９７×１０４Ｐａがより好ましい。 The plasma processing method and plasma processing apparatus of the present invention are particularly suitable for an open system of 1 Pa or more, particularly a substantially normal pressure (near atmospheric pressure), or a low airtight system, but is not limited thereto. In the present invention, “substantially normal pressure” refers to a range of 1.013 × 10 4 to 50.663 × 10 4 Pa, and considering the ease of pressure adjustment and the simplification of the apparatus configuration, 1.333 × 10 4. ˜10.664 × 10 4 Pa is preferable, and 9.331 × 10 4 to 10.397 × 10 4 Pa is more preferable.

本発明のプラズマ処理方法及びプラズマ処理装置は、品質が安定したプラズマ処理を行うことができる。   The plasma processing method and the plasma processing apparatus of the present invention can perform plasma processing with stable quality.

以下、本発明の実施の形態として実施例について図３〜図７を参照しながら説明する。   Hereinafter, examples of the present invention will be described with reference to FIGS.

（実施例１） 実施例１のプラズマ処理装置１０について、図３〜図６を参照しながら説明する。   (Example 1) The plasma processing apparatus 10 of Example 1 is demonstrated, referring FIGS. 3-6.

図３の構成図に模式的に示すように、プラズマ処理装置１０は、間隔を設けて配置された一対の電極１２，１３と、電極１２，１３間に電圧を印加する電源１８と、電流値を検出する電流センサ１９と、搬送装置２０とを備える。   As schematically shown in the configuration diagram of FIG. 3, the plasma processing apparatus 10 includes a pair of electrodes 12 and 13 arranged at intervals, a power source 18 that applies a voltage between the electrodes 12 and 13, and a current value. A current sensor 19 that detects the above and a transfer device 20.

プラズマ処理装置１０は、１Ｐａ以上、特に略常圧（大気圧近傍）の開放系、あるいは低気密系に配置され、プラズマ処理を開始する前には、周囲の空気が装置内部に侵入し、電極１２，１３の間の空間１４（以下、「電極対間１４」という。）には、図３（ａ）に示したように、空気６が存在する。   The plasma processing apparatus 10 is disposed in an open system or a low airtight system of 1 Pa or more, particularly substantially normal pressure (near atmospheric pressure), and before starting the plasma processing, the surrounding air enters the apparatus and the electrode As shown in FIG. 3A, air 6 exists in a space 14 between 12 and 13 (hereinafter referred to as “electrode pair 14”).

電源１８は、電極１２，１３間に、例えば交流電圧やパルス電圧を印加することにより、放電を発生させる。放電の形態は、グロー放電が均一処理のために好ましいが、コロナ放電や誘電体バリア放電や沿面放電であってもよい。電極対間１４の一端１５からは、図３（ｂ）において矢印３８で示すように、後述するガス供給装置３２（図５参照）により処理ガス８が供給され、電極対間１４の他端の開口１６から、放電を発生させた電極対間１４を通過する際にプラズマ化された処理ガス８（プラズマ空間を通ることにより活性化された処理ガス８）が流れ出る。被処理部材２は、搬送装置２０によって矢印２２で示すように搬送され、処理ガス８が流れ出る開口１６に対向する領域を横断する。   The power source 18 generates discharge by applying an AC voltage or a pulse voltage between the electrodes 12 and 13, for example. As the form of discharge, glow discharge is preferable for uniform treatment, but corona discharge, dielectric barrier discharge, and creeping discharge may be used. As shown by an arrow 38 in FIG. 3B, the processing gas 8 is supplied from one end 15 of the electrode pair 14 by a gas supply device 32 (see FIG. 5) described later. From the opening 16, the processing gas 8 that has been converted to plasma (the processing gas 8 that has been activated by passing through the plasma space) flows out when passing through the electrode pair 14 that has generated discharge. The member 2 to be processed is transported by the transport device 20 as indicated by an arrow 22 and traverses a region facing the opening 16 from which the processing gas 8 flows out.

プラズマ化された処理ガス８（現にプラズマ化している処理ガス８であっても、プラズマを経て活性化した処理ガス８であってもよい。）を、被処理部材２に接触させることにより、放電よるプラズマ（活性種、イオンなど）を用いて、被処理部材２の表面改質、アッシング、洗浄などのプラズマ処理を行う。処理ガス８は、プラズマ処理の目的に応じて選択すればよい。例えば、酸化処理には、窒素と酸素の混合ガスを用いる。還元処理には、窒素と水素を用いる。撥水化やエッチングには、フルオロカーボンを用いる。希釈ガスとして、窒素、アルゴン等の不活性ガスを用いてもよい。   By bringing the processing gas 8 that has been made into plasma (either the processing gas 8 that is actually converted into plasma or the processing gas 8 that has been activated through plasma) into contact with the member 2 to be processed, discharge is performed. Plasma processing such as surface modification, ashing, and cleaning of the member to be processed 2 is performed using the plasma (active species, ions, and the like). The processing gas 8 may be selected according to the purpose of the plasma processing. For example, a mixed gas of nitrogen and oxygen is used for the oxidation treatment. Nitrogen and hydrogen are used for the reduction treatment. Fluorocarbon is used for water repellency and etching. An inert gas such as nitrogen or argon may be used as the dilution gas.

図４のブロック図に示すように、プラズマ装置１０は、プラズマ装置１０全体の制御を統括する制御部３０に、電源１８と、電流センサ１９と、搬送装置２０と、処理ガス８を供給するガス供給装置３２とが接続されている。   As shown in the block diagram of FIG. 4, the plasma device 10 is a gas that supplies a power source 18, a current sensor 19, a transfer device 20, and a processing gas 8 to a control unit 30 that controls the entire plasma device 10. A supply device 32 is connected.

電流センサ１９は、電源１８が電極１２，１３間に電圧を印加したときに流れる電流の電流値（放電電流値）を検出する。電流センサ１９により、電極対間１４に残留している空気６が処理ガス８で置換された程度を検出することができる。   The current sensor 19 detects a current value (discharge current value) of a current that flows when the power source 18 applies a voltage between the electrodes 12 and 13. The current sensor 19 can detect the degree to which the air 6 remaining in the electrode pair 14 is replaced with the processing gas 8.

例えば図５に示すように、電極対間１４に窒素ガスのみが存在する場合と、電極対間１４に空気６のみが存在する場合とでは、放電電流値の大きさが異なる。処理ガス８として窒素ガスを供給し、電極対間１４に残留している空気６を処理ガス８（窒素ガス）で置換していくと、例えば図６に示すように、放電電流値は時間の経過とともに変化し、やがて一定となる。したがって、放電電流値の大きさから、電極対間１４の空気６が処理ガス８で置換された程度を検出することができる。   For example, as shown in FIG. 5, the magnitude of the discharge current value differs between the case where only the nitrogen gas is present between the electrode pairs 14 and the case where only the air 6 is present between the electrode pairs 14. When nitrogen gas is supplied as the processing gas 8 and the air 6 remaining between the electrode pairs 14 is replaced with the processing gas 8 (nitrogen gas), for example, as shown in FIG. It changes over time and becomes constant over time. Therefore, it is possible to detect the degree of replacement of the air 6 between the electrode pairs 14 with the processing gas 8 from the magnitude of the discharge current value.

次に、プラズマ処理装置１０の動作について説明する。   Next, the operation of the plasma processing apparatus 10 will be described.

まず、ガス供給装置３２が作動して処理ガス８を電極対間１４に供給する。電極対間１４に処理ガス８がある程度供給されたタイミングで、電源１８は電極１２，１３間に電圧を印加することを開始し、このときに流れる電流の電流値（放電電流値）を電流センサ１９で検出する。制御部３０は、電流センサ１９で検出した放電電流値を監視する。   First, the gas supply device 32 is operated to supply the processing gas 8 to the electrode pair 14. The power source 18 starts applying a voltage between the electrodes 12 and 13 at a timing when the processing gas 8 is supplied to the electrode pair 14 to some extent, and the current value (discharge current value) of the current flowing at this time is measured as a current sensor. 19 to detect. The control unit 30 monitors the discharge current value detected by the current sensor 19.

制御部３０は、電流センサ１９で検出した放電電流値により、電極対間１４に残留している空気６を処理ガス８で所定レベルまで置換したと判断したら、搬送装置２０による被処理部材２の搬送を開始させる。例えば、処理ガス８に窒素を用いる場合、図６に示したように放電電流値が時間とともに変化するので、放電電流値が所定のしきい値より小さくなったとき、あるいは、放電電流値の変化率が所定のしきい値より小さくなったとき、電極対間１４に残留している空気６を処理ガス８で所定レベルまで置換したと判断する。   When the control unit 30 determines that the air 6 remaining in the electrode pair 14 has been replaced with the processing gas 8 to a predetermined level based on the discharge current value detected by the current sensor 19, Start conveyance. For example, when nitrogen is used as the processing gas 8, the discharge current value changes with time as shown in FIG. 6, so that the discharge current value becomes smaller than a predetermined threshold value or the change in the discharge current value. When the rate becomes smaller than a predetermined threshold value, it is determined that the air 6 remaining in the electrode pair 14 is replaced with the processing gas 8 to a predetermined level.

制御部３０は、搬送装置２０で搬送された被処理部材２が、適切なタイミングで開口１６に対向する位置に到達するようにする。すなわち、図３（ｂ）に示すように、電極対間１４に残留している気体６を置換した処理ガス８が、電極対間１４の放電によってプラズマ化され、開口１６に対向する位置に到達した被処理部材２に接触するようにする。換言すれば、電極対間１４に残留していた気体６や、この気体６を含む処理ガス８が被処理部材２に接触しないように、処理ガス８の供給開始後しばらく時間が経過してから、被処理部材２が開口１６に対向する位置に到達するようにする。   The control unit 30 causes the processing target member 2 conveyed by the conveying device 20 to reach a position facing the opening 16 at an appropriate timing. That is, as shown in FIG. 3B, the processing gas 8 replacing the gas 6 remaining between the electrode pairs 14 is turned into plasma by the discharge between the electrode pairs 14 and reaches a position facing the opening 16. The processed member 2 is brought into contact. In other words, the gas 6 remaining between the electrode pairs 14 and the processing gas 8 containing the gas 6 do not come into contact with the member 2 to be processed after a certain time has elapsed after the supply of the processing gas 8 is started. The member 2 to be processed is made to reach a position facing the opening 16.

このとき、電極対間１４に残留している気体６を所定レベルまで置換した処理ガス８がプラズマ化され、その処理ガス８の先頭が、丁度、開口１６に対向する位置に到達した被処理部材２に接触するように制御することによって、時間的な無駄をなくし、効率よくプラズマ処理を行うようにすることができる。   At this time, the processing gas 8 in which the gas 6 remaining between the electrode pairs 14 is replaced to a predetermined level is turned into plasma, and the processing object 8 reaches the position where the head of the processing gas 8 just faces the opening 16. By controlling to contact 2, it is possible to eliminate time waste and perform plasma processing efficiently.

品質の安定化を考慮すれば、電極対間１４の空気６を処理ガス８で必要十分に置換するまで、処理ガス８が被処理部材２に接触しないようにする。被処理部材２に接触する処理ガス８は、電極対間１４の空気６を必要十分に置換した処理ガス８が、電極対間１４に発生させた放電によりプラズマ化されたもののみにする。   If stabilization of quality is taken into consideration, the processing gas 8 is prevented from coming into contact with the processing target member 2 until the air 6 between the electrode pairs 14 is sufficiently replaced with the processing gas 8. The processing gas 8 in contact with the member to be processed 2 is limited to a gas that has been converted into plasma by the discharge generated between the electrode pairs 14 by sufficiently replacing the air 6 between the electrode pairs 14.

この場合、電極対間１４に残留している空気６が処理ガス８に置換したことを検知して制御する代わりに、電極対間１４の空気６が処理ガス８で必要十分に置換される時間を、供給する処理ガス８の量、電極間１３などの処理ガス８が流れる流路の容量、被処理部材２の搬送速度などから計算しておき、あるいは実験的に求めておき、プラズマ装置１０の各部が動作する経過時間を予め設定しておくことができる。これにより、処理ガス８の置換を検出するための電流センサ１９などが不要となり、装置構成を簡単にすることができる。   In this case, instead of detecting and controlling that the air 6 remaining in the electrode pair 14 is replaced with the processing gas 8, the time required to sufficiently and sufficiently replace the air 6 between the electrode pairs 14 with the processing gas 8. Is calculated from the amount of the processing gas 8 to be supplied, the capacity of the flow path through which the processing gas 8 flows between the electrodes 13 and the like, the conveyance speed of the member 2 to be processed, or the like, or obtained experimentally. The elapsed time during which each unit operates can be set in advance. Thereby, the current sensor 19 for detecting the replacement of the processing gas 8 is not necessary, and the apparatus configuration can be simplified.

（まとめ） 以上のように、プラズマ処理装置１０，１０ａは、電極対間１４などの処理ガス８が流れる系を処理ガス８で必要十分に置換することにより、これまで常圧プロセスでは防ぐことができなかった空気の混入による処理ムラを、解消することができる。   (Summary) As described above, the plasma processing apparatuses 10 and 10a can prevent the conventional atmospheric pressure process by replacing the system in which the processing gas 8 such as the electrode pair 14 flows with the processing gas 8 as necessary and sufficiently. Processing unevenness due to air contamination that could not be achieved can be eliminated.

なお、本発明は、上記した実施の形態に限定されるものではなく、種々変更を加えて実施することが可能である。例えば、電極の形状は任意であり、電極の互いに対向する面が曲面であってもよい。電極の互いに対向する面を被覆する誘電体を備えてもよい。   The present invention is not limited to the above-described embodiment, and can be implemented with various modifications. For example, the shape of the electrodes is arbitrary, and the surfaces of the electrodes facing each other may be curved surfaces. You may provide the dielectric material which coat | covers the mutually opposing surface of an electrode.

プラズマ処理装置の構成図である。It is a block diagram of a plasma processing apparatus. プラズマ処理装置の構成図である。It is a block diagram of a plasma processing apparatus. プラズマ処理装置の構成図である。（実施例１）It is a block diagram of a plasma processing apparatus. Example 1 プラズマ処理装置のブロック図である。（実施例１）It is a block diagram of a plasma processing apparatus. Example 1 放電電流値のグラフである。It is a graph of a discharge current value. 放電電流値の変化を示すグラフである。 It is a graph which shows the change of a discharge current value .

符号の説明Explanation of symbols

２ 被処理部材（被処理物）
６ 空気（気体）
８ 処理ガス
１０ プラズマ処理装置
１２，１３ 電極
１４ 空間（電極対間）
１８ 電源
１９ 電流センサ（検出部）
２０ 搬送装置
３０ 制御部
３２ ガス供給装置（ガス供給部） 2 Processed member (processed object)
6 Air (gas)
8 process gas 1 0 plasma processing apparatus 12, 13 electrodes 14 space (electrode pairs)
18 Power supply 19 Current sensor (detection unit)
20 Conveying device 30 Control unit 32 Gas supply device (gas supply unit)

Claims (2)

対向する電極に電圧を印加し、該電極の間の空間（以下、「電極対間」という。）で放電を発生させ、該電極対間を通過させてプラズマ化させた処理ガスを被処理物に接触させて該被処理物を処理する、プラズマ処理方法であって、
前記電極対間に前記処理ガスを供給する、第１のステップと、
前記電極対間に残留している気体が前記処理ガスで完全に置換される前に、前記電極に電圧を印加することを開始して放電を発生させ、前記電極対間を通過する前記処理ガスをプラズマ化させるとともに、前記電極に電圧を印加したときに流れる電流の電流値を検出する、第２のステップと、
検出した前記電流値の大きさから、前記電極対間に残留している前記気体が前記処理ガスで置換された程度を検出し、検出した前記電流値がしきい値より小さくなったとき、あるいは、検出した前記電流値の変化率がしきい値より小さくなったとき、前記電極対間に残留している前記気体を前記処理ガスで置換したと判断して、前記電極対間を通過してプラズマ化された前記処理ガスを前記被処理物に接触させる、第３のステップとを備えたことを特徴とする、プラズマ処理方法。 A voltage is applied to the opposing electrodes, discharge is generated in the space between the electrodes (hereinafter referred to as “between electrode pairs”), and the processing gas that has been converted into plasma through the electrode pairs is processed. A plasma processing method of processing the object to be processed in contact with
Supplying the processing gas between the pair of electrodes;
Before the gas remaining between the electrode pairs is completely replaced by the processing gas, the processing gas that starts to apply a voltage to the electrodes to generate a discharge and passes between the electrode pairs And a second step of detecting a current value of a current that flows when a voltage is applied to the electrode,
Detecting the extent to which the gas remaining between the electrode pair is replaced with the processing gas from the detected magnitude of the current value , and when the detected current value is smaller than a threshold value, or when the change rate of the detected said current value becomes smaller than the threshold value, it is judged that the gas remaining between the electrode pairs and replacement with the process gas, to pass between the electrode pairs And a third step of bringing the processing gas that has been turned into plasma into contact with the object to be processed. 対向する電極と、
前記電極に電圧を印加して、前記電極の間の空間（以下、「電極対間」という。）に放電を発生させる電源と、
前記電極対間に処理ガスを供給するガス供給部と、
前記電源が前記電極に電圧を印加したときに流れる電流の電流値を検出する検出部と、
前記電極対間を通過した前記処理ガスが流れ出る開口に対向する領域を横断するように被処理物を搬送する搬送装置と、
前記電極対間に前記処理ガスを供給し、前記電極対間に残留している気体が前記処理ガスで完全に置換される前に前記電極に電圧を印加することを開始して放電を発生させ、前記検出部により検出した前記電流値の大きさから、前記電極対間に残留している前記気体が前記処理ガスで置換された程度を検出し、検出した前記電流値がしきい値より小さくなったとき、あるいは、検出した前記電流値の変化率がしきい値より小さくなったとき、前記電極対間に残留している前記気体を前記処理ガスで置換したと判断して、前記電極対間を通過してプラズマ化された前記処理ガスを前記被処理物に接触させるように、前記電源及び前記ガス供給部と前記搬送装置とを制御する制御部とを備えたことを特徴とする、プラズマ表面処理装置。 Opposing electrodes;
A power source that applies a voltage to the electrodes to generate a discharge in a space between the electrodes (hereinafter referred to as “between electrode pairs”);
A gas supply unit for supplying a processing gas between the electrode pair;
A detection unit that detects a current value of a current that flows when the power source applies a voltage to the electrode;
A transfer device for transferring an object to be processed so as to cross a region facing an opening through which the processing gas that has passed between the electrode pairs flows out;
The process gas is supplied between the electrode pair, and a discharge is generated by starting to apply a voltage to the electrode before the gas remaining between the electrode pair is completely replaced by the process gas. Detecting the degree of replacement of the gas remaining between the electrode pairs with the processing gas from the magnitude of the current value detected by the detection unit, and the detected current value is smaller than a threshold value when becomes, or when the change rate of the detected said current value becomes smaller than the threshold value, it is judged that the gas remaining between the electrode pairs and replacement with the process gas, the electrode A control unit that controls the power supply, the gas supply unit, and the transfer device is provided so that the processing gas that has been converted into plasma through a pair contacts the object to be processed. , Plasma surface treatment equipment.
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JP5725688B2 (en) * 2006-11-24 2015-05-27 学校法人トヨタ学園 Atmospheric pressure plasma jet device
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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996031997A1 (en) * 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
JP2001007089A (en) * 1999-06-25 2001-01-12 Matsushita Electric Ind Co Ltd Plasma treatment method and apparatus
JP2003027210A (en) * 1994-07-04 2003-01-29 Seiko Epson Corp Surface treatment method and method for manufacturing display device
JP2003046359A (en) * 2001-08-02 2003-02-14 Adtec Plasma Technology Co Ltd Impedance matching device with load effective power measurement function
JP2003201570A (en) * 2001-11-01 2003-07-18 Konica Corp Apparatus and method for atmospheric plasma treatment, and long film manufactured thereby
JP2004207708A (en) * 2002-12-10 2004-07-22 Semiconductor Energy Lab Co Ltd Plasma treatment apparatus and plasma treatment method, and manufacturing method for thin film transistor
JP2005002352A (en) * 1997-04-24 2005-01-06 Konica Minolta Holdings Inc Surface treatment unit for base material
JP2005109183A (en) * 2003-09-30 2005-04-21 Daihen Corp Method for controlling output power of high-frequency power supply and high-frequency power unit
JP2006019067A (en) * 2004-06-30 2006-01-19 Sharp Corp Plasma treatment device and plasma treatment method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04370698A (en) * 1991-06-20 1992-12-24 Fujitsu Ltd Microwave matching method
JP3156167B2 (en) * 1992-05-11 2001-04-16 イーシー化学株式会社 Electrode for atmospheric pressure plasma
JP3104047B2 (en) * 1992-08-07 2000-10-30 イーシー化学株式会社 Electrode for atmospheric pressure glow discharge plasma
JPH10147881A (en) * 1996-11-19 1998-06-02 Mines:Kk Atmospheric pressure discharge method and device therefor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003027210A (en) * 1994-07-04 2003-01-29 Seiko Epson Corp Surface treatment method and method for manufacturing display device
WO1996031997A1 (en) * 1995-04-07 1996-10-10 Seiko Epson Corporation Surface treatment apparatus
JP2005002352A (en) * 1997-04-24 2005-01-06 Konica Minolta Holdings Inc Surface treatment unit for base material
JP2001007089A (en) * 1999-06-25 2001-01-12 Matsushita Electric Ind Co Ltd Plasma treatment method and apparatus
JP2003046359A (en) * 2001-08-02 2003-02-14 Adtec Plasma Technology Co Ltd Impedance matching device with load effective power measurement function
JP2003201570A (en) * 2001-11-01 2003-07-18 Konica Corp Apparatus and method for atmospheric plasma treatment, and long film manufactured thereby
JP2004207708A (en) * 2002-12-10 2004-07-22 Semiconductor Energy Lab Co Ltd Plasma treatment apparatus and plasma treatment method, and manufacturing method for thin film transistor
JP2005109183A (en) * 2003-09-30 2005-04-21 Daihen Corp Method for controlling output power of high-frequency power supply and high-frequency power unit
JP2006019067A (en) * 2004-06-30 2006-01-19 Sharp Corp Plasma treatment device and plasma treatment method

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