JP4691417B2 - 回路接続構造体及びその製造方法及び回路接続構造体用の半導体基板 - Google Patents
回路接続構造体及びその製造方法及び回路接続構造体用の半導体基板 Download PDFInfo
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- JP4691417B2 JP4691417B2 JP2005240204A JP2005240204A JP4691417B2 JP 4691417 B2 JP4691417 B2 JP 4691417B2 JP 2005240204 A JP2005240204 A JP 2005240204A JP 2005240204 A JP2005240204 A JP 2005240204A JP 4691417 B2 JP4691417 B2 JP 4691417B2
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- H—ELECTRICITY
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- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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Description
図1は、本発明の実施の形態1による回路接続構造体を示す概略断面図である。実施の形態1は、回路接着部材4として異方導電性フィルム(ACF)を使用した場合について説明する。図1において、回路接続構造体1Aは、半導体基板2と、回路部材3とが回路接着部材4を挟持して構成されている。
まず、半導体基板2に耐熱性樹脂膜5の原料となる耐熱性樹脂組成物をスピンコート法等により塗布し、加熱処理を施して熱硬化する。これにより、半導体基板2の表面に耐熱性樹脂膜5が形成される。
プラズマ処理に使用するプラズマ処理装置としては、例えば、半導体の加工用に使用されるドライエッチング装置が好適に使用できる。
図4は、本発明の実施の形態2による回路接続構造体を示す概略断面図である。実施の形態2では、回路接着部材4として、非導電性フィルム(NCF)を使用しており、その他は実施の形態1と同様な材料や製造方法を適用できるので、重複する記載は省略する。
図2に示すように、実施の形態1と同様にプラズマ処理を施した半導体基板2と、第1の回路電極6に対向する第2の回路電極7が表面に多数形成された回路部材3とを用意する。次に、図5に示すように、第1の回路電極6と第2の回路電極7とが重なり合うように、半導体基板2と回路部材3とを位置合わせして対向配置する。この時、これらの半導体基板2と回路部材3との間に、回路接着部材4を配置しておく。
こうして、高温、高湿下でも良好な接着性を長期に亘り維持できる回路接続構造体1Bを製造することができる。
[1](合成例1)ポリイミド前駆体ワニスの作成
温度計、攪拌装置、冷却管及び窒素導入管を備えた4つ口セパラブルフラスコ中で、N−メチル−2−ピロリドン289.2gに4,4’−ジアミノジフェニルエーテル20.02 g(0.1モル)を溶解させた後、ピロメリット酸二無水物 31.02 g(0.1モル)を加え、室温で6時間攪拌した。その後、粘度調整を行い、15重量%のポリイミド前駆体ワニスを得た。
合成例1で得られた耐熱性樹脂膜としてのポリイミド前駆体ワニスを、半導体基板としての5インチシリコンウエハにスピン塗布をして、ホットプレート上130℃で2分間、拡散炉を用いて窒素雰囲気下200℃で30分間、350℃で60分間それぞれ加熱処理をして、膜厚5μmのポリイミド(α)膜付きシリコン基板(X)を得た。
得られたポリイミド(α)膜付きシリコン基板(X)を日本真空(株)製CSE−1110枚葉式プラズマエッチング装置を用いて、窒素を総流量25cc/分、圧力10Pa、高周波電力100Wで2分間処理を行った。得られた窒素プラズマ処理済みポリイミド膜付きシリコン基板をダイヤモンドカッター付きダイサーによって1cm角に切り出し、接着性評価用下層チップとした。
フェノキシ樹脂(高分子量エポキシ樹脂)を含有するACF材、日立化成工業(株)製AC−8408を切断し、2mm幅のテープ状物を得た。
2×10mmシリコン基板に、厚さ0.5mm、長辺側2辺にバンプと呼ばれる50μmφ、高さ20μmの金電極が300個形成されている、評価用ICチップを接着性評価用上層チップとした。この接着性評価用上層チップと、上記窒素プラズマ処理済み下層チップとでACF材製AC−8408を挟み、加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間及び48時間投入した。接着強度評価は、Dage製Series4000接合強度試験機を用いて、未処理サンプルと共に、260℃の温度に設置したステージにサンプルを載せてから30秒後にせん断処理を行い、接着強度と破壊モードの比較評価を行った。プレッシャークッカ試験の未処理品の結果を併せて表1に示す。
[1](合成例2)ポリイミド前駆体ワニスの作成
温度計、攪拌装置、冷却管及び窒素導入管を備えた4つ口セパラブルフラスコに、N−メチル−2−ピロリドン270.0gに4,4’−ジアミノジフェニルエーテル18.02g(0.09mol)と1,3−ビス(3−アミノプロピル)−1,1,1−テトラメチルジシロキサン2.49g(0.01mol)を溶解させたものを加え、さらに、ピロメリット酸二無水物6.54g(0.03mol)と3,3’,4,4’−ビフエニルテトラカルボン酸二無水物20.60g(0.07mol)を加え、室温で6時間攪拌した。その後、粘度調整を行い、さらに1μm孔のテフロン(登録商標)フィルタを用いて加圧濾過し、15重量%ポリイミド前駆体ワニスを得た。
合成例2で得られた耐熱性樹脂膜としてのポリイミド前駆体ワニスを、半導体基板としての5インチシリコンウエハにスピン塗布をして、ホットプレート上130℃で2分間、拡散炉を用いて窒素雰囲気下200℃で30分間、350℃で60分間加熱処理をして、膜厚5μmのポリイミド(β)膜付きシリコン基板(Y)を得た。
得られたポリイミド(β)膜付きシリコン基板(Y)を日本真空(株)製CSE−1110枚葉式プラズマエッチング装置を用いて、窒素を総流量25cc/分、圧力10Pa、高周波電力100Wで2分間処理を行った。得られた窒素プラズマ処理済みポリイミド膜付きシリコン基板を、ダイヤモンドカッター付きダイサーを用いて1cm角に切り出し、接着性評価用下層チップとした。
実施例1と同様に、2mm幅のACF材、日立化成工業(株)製AC−8408を用いた。
実施例1と同様に、評価用ICチップを接着性評価用上層チップ、上記窒素プラズマ処理済みポリイミド(β)膜付きポリイミド膜付きシリコン基板を下層チップとして、ACF材AC−8408を挟み、加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
実施例1と同様に、得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間、48時間投入し、未処理サンプルと共に、Dage製Series4000接合強度試験機を用いて、260℃下の接着強度と破壊モードの比較評価を行った。結果を表1に示す。
[1](合成例3)ポリベンゾオキサゾール前駆体ワニスの作成
ポリベンゾオキサゾール前駆体の合成
攪拌機及び温度計を備えた0.5リットルのフラスコ中に、4,4’−ジカルボキシルジフェニルエーテル21.7g(0.084モル)及びN−メチルピロリドン125.0gを仕込み、フラスコを0℃に冷却し、塩化チオニル20.0g(0.168モル)を、反応温度を10℃以下に保持しながら滴下した。塩化チオニルの滴下後10℃付近で30分間撹拌して、4,4’−ジカルボキシルジフェニルエーテルのジクロリド溶液を得た。
合成例3で得られた耐熱性樹脂膜としてのポリベンゾオキサゾール前駆体ワニスを、半導体基板としての5インチシリコンウエハにスピン塗布をして、ホットプレート上120℃で2分間、拡散炉を用いて窒素雰囲気下200℃で30分間、320℃で60分間加熱処理をして、膜厚5μmのポリベンゾオキサゾール(γ)膜付きシリコン基板(Z)を得た。
得られたポリベンゾオキサゾール(γ)膜付きシリコン基板(Z)を日本真空(株)製CSE−1110枚葉式プラズマエッチング装置を用いて、窒素を総流量25cc/分、圧力10Pa、高周波電力100Wで2分間処理を行った。得られた窒素プラズマ処理済みポリイミド膜付きシリコン基板を、ダイヤモンドカッター付きダイサーを用いて1cm角に切り出し、接着性評価用下層チップとした。
実施例1と同様に、2mm幅のACF材、日立化成工業(株)製AC−8408を用いた。
実施例1と同様に、評価用ICチップを接着性評価用上層チップ、上記窒素プラズマ処理済みシリコン基板(Z)を下層チップとしてACF材AC−8408を挟み、上記構成で加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
実施例1と同様に、得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間、48時間投入し、未処理サンプルと共に、Dage製Series4000接合強度試験機を用いて、接着強度と破壊モードの比較評価を行った。結果を表1に示す。
[5]圧着
実施例1で得られた膜厚5μmのポリイミド(α)膜付きシリコン基板(X)を、プラズマ処理をせずに、下層チップとして使用。評価用ICチップを接着性評価用上層チップとし、接着フィルムは、2mm幅のACF材、日立化成工業(株)製AC−8408を用いた。上記構成で加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
実施例1と同様に、得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間、48時間投入し、未処理サンプルと共に、Dage製Series4000接合強度試験機を用いて、接着強度と破壊モードの比較評価を行った。結果を表1に示す。
[3]プラズマ処理
実施例1で得られた膜厚5μmのポリイミド(α)膜付きシリコン基板(X)を、ヤマト化学製PC101A酸素プラズマ装置を用いて、酸素を総流量100cc/分、圧力100Pa、高周波電力400Wで2分間処理を行った。得られた酸素プラズマ処理済みポリイミド膜付きシリコン基板を、ダイヤモンドカッター付きダイサーを用いて1cm角に切り出し、接着性評価用下層チップとした。
評価用ICチップを接着性評価用上層チップとし、酸素プラズマ処理済みシリコン基板(X)を下層チップとして使用し、接着フィルムは、2mm幅のACF材、日立化成工業(株)製AC−8408を用いた。上記構成で加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
実施例1と同様に、得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間、48時間投入し、未処理サンプルと共に、Dage製Series4000接合強度試験機を用いて、接着強度と破壊モードの比較評価を行った。結果を表1に示す。
[3]プラズマ処理
得られた膜厚5μmのポリイミド(α)膜付きシリコン基板(X)を日本真空製CSE−1110枚葉式プラズマエッチング装置を用いて、四フッ化メタンを総流量25cc/分、圧力10Pa、高周波電力100Wで2分間処理を行った。得られた四フッ化メタンプラズマ処理済みポリイミド膜付きシリコン基板を、ダイヤモンドカッター付きダイサーを用いて1cm角に切り出し、接着性評価用下層チップとした。
評価用ICチップを接着性評価用上層チップとし、四フッ化メタンプラズマ処理済みシリコン基板(X)を下層チップとして使用し、接着フィルムは、2mm幅のACF材、日立化成工業(株)製AC−8408を用いた。上記構成で加熱温度を160℃に設定し、総電極面積当たり50MPaで10秒間加熱圧着を行い、評価用電極半導体基板を得た。
実施例1と同様に、得られた評価用電極半導体基板を121℃、2atm、100RH%のプレッシャークッカ試験機に、24時間、48時間投入し、未処理サンプルと共に、Dage製Series4000接合強度試験機を用いて、接着強度と破壊モードの比較評価を行った。結果を表1に示す。
以上の実施例1〜3及び比較例1〜3における評価結果を、まとめて表1に示す。
2 半導体基板
3 回路部材
4 回路接着部材
5 耐熱性樹脂膜
6 第1の回路電極
7 第2の回路電極
8 導電性粒子
Claims (12)
- 窒素、アンモニア及びヒドラジンからなる群から選択される少なくとも1種を含む窒素系ガスを用いて、表面に耐熱性樹脂膜及び第1の回路電極を有する半導体基板をプラズマ処理してアミド基(−NH−CO−)またはアミノ基(−NH 2 )を前記耐熱性樹脂膜の表面に形成する表面改質処理を行う工程と、
前記表面改質処理された半導体基板と、前記第1の回路電極に対向する第2の回路電極を表面に有する回路部材とを、回路接着部材を介在させて前記第1及び第2の回路電極が対向するように配置する工程と、
前記半導体基板及び前記回路部材を圧着して、前記半導体基板及び前記回路部材を接着すると共に、対向する前記第1及び第2の回路電極同士を電気的に接続する圧着工程とを含む回路接続構造体の製造方法であって、
前記耐熱性樹脂膜は、ポリアミド、ポリイミド、ポリアミドイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール及びベンゾシクロブテンからなる群から選択される少なくとも1種のポリマー若しくは少なくとも2種のコポリマー、又は前記群から選択される少なくとも1種の前駆体からなる膜であり、前記回路接着部材は、エポキシ系樹脂及びアクリル系樹脂のいずれかを含む接着フィルム又は接着ペーストであることを特徴とする回路接続構造体の製造方法。 - 前記回路接着部材は導電性粒子を含み、前記第1及び第2の回路電極は前記導電性粒子を介して電気的に接続されることを特徴とする請求項1に記載の回路接続構造体の製造方法。
- 前記窒素系ガスは、さらに水素又は不活性ガスを含む混合ガスであることを特徴とする請求項1又は請求項2に記載の回路接続構造体の製造方法。
- 前記窒素系ガスの比率は、前記混合ガスに対して20〜100容積%であることを特徴とする請求項3に記載の回路接続構造体の製造方法。
- 前記耐熱性樹脂膜は、ポリアミド、ポリイミド、ポリアミドイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール及びベンゾシクロブテンからなる群から選択される少なくとも2種のコポリマー、又は前記群から選択される少なくとも1種の前駆体からなる膜であることを特徴とする請求項1から請求項4のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 前記耐熱性樹脂膜は、ポリアミド及びポリベンゾオキサゾールのいずれかからなる膜であることを特徴とする請求項1から請求項4のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 前記プラズマ処理を、0.5Paから常圧の範囲の圧力で行うことを特徴とする請求項1から請求項6のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 前記プラズマ処理は、基板バイアス又は自己バイアス電圧が−200V以上0V以下、基板温度が0℃以上200℃以下の範囲におけるプラズマ処理である請求項1から請求項7のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 前記半導体基板は、半導体素子であることを特徴とする請求項1から請求項8のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 前記回路部材は、ガラス基板、金属基板又はセラミック基板であることを特徴とする請求項1から請求項9のうち、いずれか1項に記載の回路接続構造体の製造方法。
- 請求項1から請求項10のうち、いずれか1項に記載の回路接続構造体の製造方法により製造されることを特徴とする回路接続構造体。
- 表面に、ポリアミド、ポリイミド、ポリアミドイミド、ポリベンゾオキサゾール、ポリベンゾイミダゾール及びベンゾシクロブテンからなる群から選択される少なくとも1種のポリマー若しくは少なくとも2種のコポリマー、又は前記群から選択される少なくとも1種の前駆体からなる耐熱性樹脂膜及び第1の回路電極を有し、窒素、アンモニア及びヒドラジンからなる群から選択される少なくとも1種を含む窒素系ガスを用いたプラズマ処理により前記耐熱性樹脂膜の表面にアミド基(−NH−CO−)またはアミノ基(−NH 2 )を形成する表面改質処理が施されたことを特徴とする回路接続構造体用の半導体基板。
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JP4892209B2 (ja) | 2005-08-22 | 2012-03-07 | 日立化成デュポンマイクロシステムズ株式会社 | 半導体装置の製造方法 |
JP4691417B2 (ja) | 2005-08-22 | 2011-06-01 | 日立化成デュポンマイクロシステムズ株式会社 | 回路接続構造体及びその製造方法及び回路接続構造体用の半導体基板 |
JP5151584B2 (ja) * | 2008-03-17 | 2013-02-27 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5965185B2 (ja) * | 2012-03-30 | 2016-08-03 | デクセリアルズ株式会社 | 回路接続材料、及びこれを用いた半導体装置の製造方法 |
KR101526278B1 (ko) * | 2012-12-21 | 2015-06-05 | 제일모직주식회사 | 경화 필름과 도전 필름을 포함하는 분리형 이방 도전성 필름 |
CN106220885B (zh) * | 2016-08-23 | 2019-04-02 | 万达集团股份有限公司 | 一种聚酰亚胺薄膜表面处理方法及处理装置 |
WO2018042701A1 (ja) | 2016-08-30 | 2018-03-08 | 日立化成株式会社 | 接着剤組成物 |
JP7314801B2 (ja) * | 2017-12-28 | 2023-07-26 | 株式会社レゾナック | 接続構造体及びその製造方法 |
JP7185252B2 (ja) | 2018-01-31 | 2022-12-07 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7046351B2 (ja) | 2018-01-31 | 2022-04-04 | 三国電子有限会社 | 接続構造体の作製方法 |
JP7160302B2 (ja) * | 2018-01-31 | 2022-10-25 | 三国電子有限会社 | 接続構造体および接続構造体の作製方法 |
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2006
- 2006-08-22 CN CN2013101308956A patent/CN103258753A/zh active Pending
- 2006-08-22 US US12/064,522 patent/US8148204B2/en active Active
- 2006-08-22 WO PCT/JP2006/316359 patent/WO2007023781A1/ja active Application Filing
- 2006-08-22 TW TW095130765A patent/TWI386121B/zh active
- 2006-08-22 KR KR1020087003289A patent/KR101174606B1/ko active IP Right Grant
- 2006-08-22 EP EP06782863A patent/EP1918989A4/en not_active Withdrawn
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JP2003073862A (ja) * | 2001-09-05 | 2003-03-12 | Matsushita Electric Ind Co Ltd | 基板表面処理装置及び方法 |
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Also Published As
Publication number | Publication date |
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TW200719778A (en) | 2007-05-16 |
CN101243548A (zh) | 2008-08-13 |
EP1918989A4 (en) | 2012-07-04 |
KR20080036079A (ko) | 2008-04-24 |
WO2007023781A1 (ja) | 2007-03-01 |
CN103258753A (zh) | 2013-08-21 |
JP2007059480A (ja) | 2007-03-08 |
KR101174606B1 (ko) | 2012-08-16 |
US20090189254A1 (en) | 2009-07-30 |
TWI386121B (zh) | 2013-02-11 |
EP1918989A1 (en) | 2008-05-07 |
US8148204B2 (en) | 2012-04-03 |
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