JP4617142B2 - 薄膜製造方法 - Google Patents
薄膜製造方法 Download PDFInfo
- Publication number
- JP4617142B2 JP4617142B2 JP2004337176A JP2004337176A JP4617142B2 JP 4617142 B2 JP4617142 B2 JP 4617142B2 JP 2004337176 A JP2004337176 A JP 2004337176A JP 2004337176 A JP2004337176 A JP 2004337176A JP 4617142 B2 JP4617142 B2 JP 4617142B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- chamber
- fluid
- raw material
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
Description
また、活性種発生装置(2)として白金線や鉄線を利用することも可能である。
まず、予め洗浄したガラス基板(7)を、チャンバー(1)にセットする。次に、ターボ分子ポンプ(55)、ロータリーポンプ(56)を作動させてチャンバー(1)内を1〜2×10-6Pa程度にまで減圧し、この状態を約5分保持して特にチャンバー内に持ち込まれた水分や酸素を排気する。また、基板(7)の温度を200℃に加熱保持する。
まず、予め洗浄したガラス基板(7)を、チャンバー(1)にセットする。次に、ターボ分子ポンプ(55)、ロータリーポンプ(56)を作動させて反応室(51)内を1〜2×10-6Pa程度にまで減圧し、この状態を約5分保持して特にチャンバー内に持ち込まれた水分や酸素を排気する。また、基板(7)の温度を200℃に加熱保持する。
Claims (5)
- チャンバー内で原料流体としての炭化水素誘導体とキャリア流体としての二酸化炭素を混合して超臨界状態を形成し、触媒反応により超臨界流体中の原料流体に活性種を発生させ、その流体を基板に吹き付けることにより、基板上に炭素含有固体膜を形成することを特徴とする薄膜製造方法。
- 触媒体として、白金、タングステン、コバルト、ニッケル、鉄またはその合金から選ばれたすくなくとも1種の金属を使用する請求項1に記載した薄膜製造方法。
- キャリア流体として二酸化炭素、原料流体としての炭化水素誘導体をあらかじめ混合した後に、チャンバー内に導入し、炭素含有固体膜を形成する請求項1に記載した薄膜製造方法。
- キャリア流体として二酸化炭素、原料流体としての炭化水素誘導体をチャンバー内に個別に導入して炭素含有固体膜を形成する請求項1に記載した薄膜製造方法。
- 炭化水素誘導体としてメタン、あるいはメタノールを用いてダイヤモンドライクカーボン固体膜を形成する請求項1〜4のいずれか1項に記載した薄膜製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004337176A JP4617142B2 (ja) | 2004-11-22 | 2004-11-22 | 薄膜製造方法 |
KR1020077011539A KR20070084435A (ko) | 2004-11-22 | 2005-09-30 | 박막제조방법 및 박막제조장치 |
PCT/JP2005/018101 WO2006054393A1 (ja) | 2004-11-22 | 2005-09-30 | 薄膜製造方法及び薄膜製造装置 |
US11/719,806 US7727597B2 (en) | 2004-11-22 | 2005-09-30 | Method and apparatus for preparing thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004337176A JP4617142B2 (ja) | 2004-11-22 | 2004-11-22 | 薄膜製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006144084A JP2006144084A (ja) | 2006-06-08 |
JP4617142B2 true JP4617142B2 (ja) | 2011-01-19 |
Family
ID=36624127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004337176A Expired - Fee Related JP4617142B2 (ja) | 2004-11-22 | 2004-11-22 | 薄膜製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4617142B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4710002B2 (ja) * | 2005-03-14 | 2011-06-29 | 国立大学法人東京農工大学 | 膜の製造方法 |
US20090202807A1 (en) * | 2006-06-22 | 2009-08-13 | National Kuniversity Corporation Kitami Institue Of Technology | Method for producing metal nitride film, oxide film, metal carbide film or composite film of them, and production apparatus therefor |
US20100243426A1 (en) * | 2007-08-27 | 2010-09-30 | Toyo University | Method for decomposing carbon-containing compound, method for producing carbon nano/microstructure, and method for producing carbon thin film |
JP2012169553A (ja) * | 2011-02-16 | 2012-09-06 | Tokyo Electron Ltd | 基板処理装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000226624A (ja) * | 1999-02-05 | 2000-08-15 | Toyota Central Res & Dev Lab Inc | 基材除去方法 |
-
2004
- 2004-11-22 JP JP2004337176A patent/JP4617142B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000226624A (ja) * | 1999-02-05 | 2000-08-15 | Toyota Central Res & Dev Lab Inc | 基材除去方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006144084A (ja) | 2006-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5674572A (en) | Enhanced adherence of diamond coatings employing pretreatment process | |
US20070134433A1 (en) | Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition | |
JPH0346437B2 (ja) | ||
KR20070084435A (ko) | 박막제조방법 및 박막제조장치 | |
US5693377A (en) | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving titanium organometallic and metal-organic precursor compounds | |
WO2004048257A3 (en) | Method for forming carbon nanotubes | |
JP4617142B2 (ja) | 薄膜製造方法 | |
WO2004048258A3 (en) | Method for forming carbon nanotubes | |
WO2004055234A1 (ja) | 成膜方法 | |
JP4618780B2 (ja) | 薄膜製造方法 | |
JPH0361633B2 (ja) | ||
JPS63166733A (ja) | ダイヤモンド膜の製造方法 | |
US6257960B1 (en) | Lapping method and method for manufacturing lapping particles for use in the lapping method | |
JP2006069805A (ja) | 微細炭素繊維の製造方法 | |
KR960008149B1 (ko) | 신선용 다이스에 다이아몬드박막을 코팅하는 방법 | |
JP2840750B2 (ja) | 被膜形成方法 | |
JP2752753B2 (ja) | 燃焼炎によるダイヤモンドの合成法 | |
JP2581330B2 (ja) | 燃焼炎によるダイヤモンドの合成法 | |
JP2619557B2 (ja) | 気相法ダイヤモンドの合成法 | |
Emelyanov et al. | EXPERIMENTAL STUDY OF DIAMOND STRUCTURE SYNTHESIS FROM AMIXTURE OF HYDROGEN WITH ETHANOL VAPOR | |
JP2584475B2 (ja) | 気相法ダイヤモンドの合成法及びその装置 | |
JPH08225394A (ja) | ダイヤモンドの気相合成方法 | |
JPS63166798A (ja) | ダイヤモンド膜の製造方法 | |
JPH0248494A (ja) | 炭素作製方法 | |
JPH0499871A (ja) | 立方晶窒化硼素の合成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100601 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100728 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100928 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20101025 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131029 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |