JP4607687B2 - 非晶質炭素膜の成膜方法 - Google Patents
非晶質炭素膜の成膜方法 Download PDFInfo
- Publication number
- JP4607687B2 JP4607687B2 JP2005195303A JP2005195303A JP4607687B2 JP 4607687 B2 JP4607687 B2 JP 4607687B2 JP 2005195303 A JP2005195303 A JP 2005195303A JP 2005195303 A JP2005195303 A JP 2005195303A JP 4607687 B2 JP4607687 B2 JP 4607687B2
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- JP
- Japan
- Prior art keywords
- evaporation source
- film
- magnetic field
- amorphous carbon
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Carbon And Carbon Compounds (AREA)
- Glass Compositions (AREA)
Description
(A) 図1に示すようなアンバランストマグネトロンスパッタリング蒸発源(2個)とアーク蒸発源(2個)を有する成膜装置を使用し、パルスモードにて(パルス電位を付与して)、Arと炭化水素ガスの混合ガス雰囲気中にてDLC 膜(非晶質炭素膜)の成膜を行った。
DLC 膜成膜の際のパルス電位付与におけるDUTY CYCLE(デューティ・サイクル)を変化させた。この点を除き、上記例1(A) の場合と同様の方法によりCr中間層およびDLC 膜の成膜を行った後、上記例1(A) の場合と同様の方法により、断面観察によるDLC 膜の膜厚の測定、DLC 膜の成膜レートの算出を行った。なお、成膜装置としても前記例1(A) の場合と同様の装置を用いた。即ち、図1に示すように、隣り合う蒸発源において磁力線がつながるようにした。
図3に示す3台のアンバランストマグネトロンスパッタ蒸発源と1台のアーク蒸発源を有する装置を用い、中間層を成膜した後、パルスモードにて、Arと炭化水素ガスの混合ガス雰囲気中にてDLC 膜(金属あるいはセラミックを含有する)の成膜を行った。
4A,5A,6A,10A,11A,12A--磁石(磁極)、
T1,T2,T3--スパッタリングターゲット。
Claims (1)
- アンバランストマグネトロンスパッタリング蒸発源を2個以上、または、アンバランストマグネトロンスパッタリング蒸発源および磁場印可方式のアーク放電式蒸発源を各々1個以上設け、これらの蒸発源の中、少なくとも1個のアンバランストマグネトロンスパッタリング蒸発源のスパッタリングターゲット材に固体炭素を用い、雰囲気をスパッタ用不活性ガスと炭素含有ガスの混合ガス雰囲気とし、非晶質炭素膜を成膜する非晶質炭素膜の成膜方法であって、前記蒸発源のそれぞれの磁場を隣の蒸発源の磁場と逆極にし、且つ、前記アンバランストマグネトロンスパッタリング蒸発源に周波数50〜400KHzのパルス電位をDUTY CYCLE(デューティ・サイクル)50〜80%で付与することを特徴とする非晶質炭素膜の成膜方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005195303A JP4607687B2 (ja) | 2005-07-04 | 2005-07-04 | 非晶質炭素膜の成膜方法 |
US11/421,240 US20070000770A1 (en) | 2005-07-04 | 2006-05-31 | Method for forming amorphous carbon film |
AT06011694T ATE439456T1 (de) | 2005-07-04 | 2006-06-06 | Verfahren zum herstellen einer amorphen kohlenstoffschicht |
DE602006008389T DE602006008389D1 (de) | 2005-07-04 | 2006-06-06 | Verfahren zum Herstellen einer amorphen Kohlenstoffschicht |
EP06011694A EP1741801B1 (en) | 2005-07-04 | 2006-06-06 | Method for forming amorphous carbon film |
KR1020060062101A KR100776888B1 (ko) | 2005-07-04 | 2006-07-03 | 비정질 탄소막의 성막방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005195303A JP4607687B2 (ja) | 2005-07-04 | 2005-07-04 | 非晶質炭素膜の成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007009310A JP2007009310A (ja) | 2007-01-18 |
JP4607687B2 true JP4607687B2 (ja) | 2011-01-05 |
Family
ID=36716897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005195303A Expired - Fee Related JP4607687B2 (ja) | 2005-07-04 | 2005-07-04 | 非晶質炭素膜の成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070000770A1 (ja) |
EP (1) | EP1741801B1 (ja) |
JP (1) | JP4607687B2 (ja) |
KR (1) | KR100776888B1 (ja) |
AT (1) | ATE439456T1 (ja) |
DE (1) | DE602006008389D1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
KR100796766B1 (ko) * | 2006-05-29 | 2008-01-22 | (주)레드로버 | 프로젝션용 스테레오 광학엔진 구조 |
KR100893675B1 (ko) * | 2007-05-11 | 2009-04-17 | 주식회사 테스 | 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법 |
WO2009052874A1 (en) * | 2007-10-26 | 2009-04-30 | Hauzer Techno Coating Bv | Dual magnetron sputtering power supply and magnetron sputtering apparatus |
WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
EP2649215A1 (en) * | 2010-12-08 | 2013-10-16 | Galleon International Corporation | Hard and low friction nitride coatings |
US20140083814A1 (en) * | 2011-02-22 | 2014-03-27 | Glory Ltd. | Money handling apparatus, money handling system, money transport cassette, banknote handling apparatus and banknote handling method |
US10304665B2 (en) | 2011-09-07 | 2019-05-28 | Nano-Product Engineering, LLC | Reactors for plasma-assisted processes and associated methods |
US9761424B1 (en) | 2011-09-07 | 2017-09-12 | Nano-Product Engineering, LLC | Filtered cathodic arc method, apparatus and applications thereof |
JP5713872B2 (ja) * | 2011-10-28 | 2015-05-07 | 株式会社神戸製鋼所 | 成膜装置及び成膜方法 |
CN102719799A (zh) * | 2012-06-08 | 2012-10-10 | 深圳市华星光电技术有限公司 | 旋转磁控溅射靶及相应的磁控溅射装置 |
CN104328380A (zh) * | 2014-07-31 | 2015-02-04 | 宁夏天马滚动体制造有限公司 | 轴承滚柱非平衡磁控溅射离子镀装置及方法 |
US11834204B1 (en) | 2018-04-05 | 2023-12-05 | Nano-Product Engineering, LLC | Sources for plasma assisted electric propulsion |
US20220162739A1 (en) * | 2019-03-15 | 2022-05-26 | Nanofilm Technologies International Limited | Improved coating processes |
CN114717512B (zh) * | 2022-04-21 | 2023-02-28 | 中国科学院兰州化学物理研究所 | 一种自适应长效润滑性能金/碳复合薄膜的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002161352A (ja) * | 2000-11-07 | 2002-06-04 | Teer Coatings Ltd | 炭素被覆、炭素被覆を施す方法および装置、およびその様な被覆を施した物品 |
JP2004285440A (ja) * | 2003-03-24 | 2004-10-14 | Daiwa Kogyo Kk | Hcd・ubmsハイブリッドpvd法およびその装置 |
JP2005138208A (ja) * | 2003-11-05 | 2005-06-02 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具とその作製方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
JPH06145975A (ja) * | 1992-03-20 | 1994-05-27 | Komag Inc | 炭素フィルムをスパタリングする方法及びその製造物 |
DE19651615C1 (de) * | 1996-12-12 | 1997-07-10 | Fraunhofer Ges Forschung | Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern |
DE19740793C2 (de) * | 1997-09-17 | 2003-03-20 | Bosch Gmbh Robert | Verfahren zur Beschichtung von Oberflächen mittels einer Anlage mit Sputterelektroden und Verwendung des Verfahrens |
US6726993B2 (en) * | 1997-12-02 | 2004-04-27 | Teer Coatings Limited | Carbon coatings, method and apparatus for applying them, and articles bearing such coatings |
JP3172139B2 (ja) * | 1998-08-04 | 2001-06-04 | 富士写真フイルム株式会社 | サーマルヘッド |
US6338777B1 (en) * | 1998-10-23 | 2002-01-15 | International Business Machines Corporation | Method and apparatus for sputtering thin films |
JP2001150351A (ja) * | 1999-11-19 | 2001-06-05 | Noritake Diamond Ind Co Ltd | ドレッシング用電着砥石 |
JP2002367138A (ja) * | 2001-06-07 | 2002-12-20 | Fujitsu Ltd | 磁気情報記録媒体 |
JP4360082B2 (ja) * | 2001-12-17 | 2009-11-11 | 住友電気工業株式会社 | 非晶質炭素被膜の製造方法及び非晶質炭素被覆摺動部品 |
-
2005
- 2005-07-04 JP JP2005195303A patent/JP4607687B2/ja not_active Expired - Fee Related
-
2006
- 2006-05-31 US US11/421,240 patent/US20070000770A1/en not_active Abandoned
- 2006-06-06 EP EP06011694A patent/EP1741801B1/en not_active Expired - Fee Related
- 2006-06-06 DE DE602006008389T patent/DE602006008389D1/de active Active
- 2006-06-06 AT AT06011694T patent/ATE439456T1/de not_active IP Right Cessation
- 2006-07-03 KR KR1020060062101A patent/KR100776888B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002161352A (ja) * | 2000-11-07 | 2002-06-04 | Teer Coatings Ltd | 炭素被覆、炭素被覆を施す方法および装置、およびその様な被覆を施した物品 |
JP2004285440A (ja) * | 2003-03-24 | 2004-10-14 | Daiwa Kogyo Kk | Hcd・ubmsハイブリッドpvd法およびその装置 |
JP2005138208A (ja) * | 2003-11-05 | 2005-06-02 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具とその作製方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1741801B1 (en) | 2009-08-12 |
DE602006008389D1 (de) | 2009-09-24 |
KR100776888B1 (ko) | 2007-11-19 |
EP1741801A3 (en) | 2007-09-05 |
KR20070004449A (ko) | 2007-01-09 |
US20070000770A1 (en) | 2007-01-04 |
ATE439456T1 (de) | 2009-08-15 |
EP1741801A2 (en) | 2007-01-10 |
JP2007009310A (ja) | 2007-01-18 |
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