JP2018040057A - マグネトロンスパッタリング装置を用いて層を堆積させるための方法 - Google Patents
マグネトロンスパッタリング装置を用いて層を堆積させるための方法 Download PDFInfo
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- JP2018040057A JP2018040057A JP2017172086A JP2017172086A JP2018040057A JP 2018040057 A JP2018040057 A JP 2018040057A JP 2017172086 A JP2017172086 A JP 2017172086A JP 2017172086 A JP2017172086 A JP 2017172086A JP 2018040057 A JP2018040057 A JP 2018040057A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- マグネトロンスパッタリング装置を用いて真空チャンバ(1)の内部で基板(2)上に層を堆積させるための方法であって、
前記マグネトロンスパッタリング装置は、それぞれ1つのターゲットが装着された少なくとも2つのマグネトロンカソード(3a;3b)と、少なくとも1つの補助電極(5)と、を含み、それぞれのマグネトロンカソード(3a;3b)に、別個の電流供給装置(4a;4b)を対応付け、前記真空チャンバ(1)に、少なくとも1種類の作動ガスの他に少なくとも1種類の反応性ガスを導入する方法において、
a)第1のフェーズでは、それぞれの電流供給装置(4a:4b)によって、対応する前記マグネトロンカソード(3a;3b)にパルス状の負の直流電圧を導通接続し、このとき前記電流供給装置(4a;4b)を、プッシュプルで動作させ、
b)第2のフェーズでは、前記電流供給装置(4a;4b)によって用意されたパルス状の前記直流電圧を、対応する前記マグネトロンカソード(3a;3b)と前記補助電極(5)との間にスイッチングし、
c)前記第1のフェーズと前記第2のフェーズとの間の切り換えを、1Hz〜10kHzの範囲の周波数で実施し、
d)前記基板または基板裏面電極(7)に1MHzより高周波数の電圧を発生させ、
e)前記ターゲットのスパッタリングが遷移モードで実施されるように、前記真空チャンバ(1)への前記反応性ガスの導入を制御する、
ことを特徴とする方法。 - 前記第1のフェーズの時間区分を、全体で5%〜60%の割合に調整する、
請求項1記載の方法。 - 前記第1のフェーズの時間区分を、全体で10%〜35%の割合に調整する、
請求項2記載の方法。 - 1MHzより高周波数の電圧を発生させるために、全てのターゲットのスパッタリングのための電力の5〜50%の電力を消費する、
請求項1から3までのいずれか1項記載の方法。 - 1MHzより高周波数の電圧を発生させるために、全てのターゲットのスパッタリングのための電力の10〜35%の電力を消費する、
請求項4記載の方法。 - 少なくとも1つのシリコン含有ターゲットを使用する、
請求項1から5までのいずれか1項記載の方法。 - 少なくとも1つのアルミニウム含有ターゲットを使用する、
請求項1から6までのいずれか1項記載の方法。 - 前記真空チャンバ(1)に、少なくとも酸素を含有する反応性ガスを導入する、
請求項1から7までのいずれか1項記載の方法。 - 酸素と窒素とからなる混合物、または、酸素とフッ素化合物含有ガスとからなる混合物を、反応性ガスとして前記真空チャンバに導入する、
請求項8記載の方法。 - 前記真空チャンバ(1)の内部の圧力を、0.5Pa未満の値に調整する、
請求項1から9までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102016116762.2A DE102016116762B4 (de) | 2016-09-07 | 2016-09-07 | Verfahren zum Abscheiden einer Schicht mittels einer Magnetronsputtereinrichtung |
DE102016116762.2 | 2016-09-07 |
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JP2018040057A true JP2018040057A (ja) | 2018-03-15 |
JP7026464B2 JP7026464B2 (ja) | 2022-02-28 |
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JP2017172086A Active JP7026464B2 (ja) | 2016-09-07 | 2017-09-07 | マグネトロンスパッタリング装置を用いて層を堆積させるための方法 |
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US (1) | US10407767B2 (ja) |
JP (1) | JP7026464B2 (ja) |
DE (1) | DE102016116762B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019183213A (ja) * | 2018-04-05 | 2019-10-24 | 株式会社クラフト | スパッタリング装置 |
Families Citing this family (2)
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CN108559956B (zh) * | 2018-04-11 | 2024-02-09 | 深圳市正和忠信股份有限公司 | 一种强辉光放电沉积类金刚石碳膜设备及加工方法 |
DE102020100061A1 (de) * | 2020-01-03 | 2021-07-08 | Schott Ag | Kühlvorrichtung und Kühlverfahren für Sputtertargets |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096174A (en) * | 1996-12-13 | 2000-08-01 | Leybold Systems Gmbh | Apparatus for coating a substrate with thin layers |
US7404877B2 (en) * | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
JP2011506759A (ja) * | 2007-12-07 | 2011-03-03 | オーツェー・エリコン・バルザース・アーゲー | Hipimsによる反応性スパッタリング |
JP2012084526A (ja) * | 2010-10-08 | 2012-04-26 | Fraunhofer-Ges Zur Foerderung Der Angewandten Forschung Ev | マグネトロン装置、および、マグネトロン装置のパルス動作方法 |
JP2016528385A (ja) * | 2013-07-16 | 2016-09-15 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウFraunhofer−Gesellschaft zur Foerderung der angewandten Forschung e.V. | 圧電性AlN含有層の堆積方法、並びにAlN含有圧電体層 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE252205C (ja) | ||||
DD252205B5 (de) | 1986-09-01 | 1993-12-09 | Fraunhofer Ges Forschung | Zerstaeubungseinrichtung |
DE3700633C2 (de) | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
DE3802852A1 (de) | 1988-02-01 | 1989-08-03 | Leybold Ag | Einrichtung fuer die beschichtung eines substrats mit einem material, das aus einem plasma gewonnen wird |
DE4438463C1 (de) | 1994-10-27 | 1996-02-15 | Fraunhofer Ges Forschung | Verfahren und Schaltung zur bipolaren pulsförmigen Energieeinspeisung in Niederdruckplasmen |
DE19702187C2 (de) | 1997-01-23 | 2002-06-27 | Fraunhofer Ges Forschung | Verfahren und Einrichtung zum Betreiben von Magnetronentladungen |
DE19830304A1 (de) | 1998-07-07 | 2000-01-13 | Volkswagen Ag | Ziehgriff für eine Abdeckung |
DE19830404B4 (de) | 1998-07-08 | 2004-07-22 | Von Ardenne Anlagentechnik Gmbh | Vorrichtung zur Sputterbeschichtung mit variierbarem Plasmapotential |
CH700002B1 (de) | 2007-09-25 | 2013-03-15 | Ardenne Anlagentech Gmbh | Verfahren und Anordnung zum redundanten Anoden-Sputtern mit einer Dual-Anoden-Anordnung. |
KR20140097510A (ko) * | 2011-11-30 | 2014-08-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 폐쇄 루프 제어 |
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- 2016-09-07 DE DE102016116762.2A patent/DE102016116762B4/de active Active
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- 2017-09-06 US US15/696,924 patent/US10407767B2/en active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096174A (en) * | 1996-12-13 | 2000-08-01 | Leybold Systems Gmbh | Apparatus for coating a substrate with thin layers |
US7404877B2 (en) * | 2001-11-09 | 2008-07-29 | Springworks, Llc | Low temperature zirconia based thermal barrier layer by PVD |
JP2011506759A (ja) * | 2007-12-07 | 2011-03-03 | オーツェー・エリコン・バルザース・アーゲー | Hipimsによる反応性スパッタリング |
JP2012084526A (ja) * | 2010-10-08 | 2012-04-26 | Fraunhofer-Ges Zur Foerderung Der Angewandten Forschung Ev | マグネトロン装置、および、マグネトロン装置のパルス動作方法 |
JP2016528385A (ja) * | 2013-07-16 | 2016-09-15 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウFraunhofer−Gesellschaft zur Foerderung der angewandten Forschung e.V. | 圧電性AlN含有層の堆積方法、並びにAlN含有圧電体層 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019183213A (ja) * | 2018-04-05 | 2019-10-24 | 株式会社クラフト | スパッタリング装置 |
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JP7026464B2 (ja) | 2022-02-28 |
DE102016116762B4 (de) | 2021-11-11 |
DE102016116762A1 (de) | 2018-03-08 |
US10407767B2 (en) | 2019-09-10 |
US20180066356A1 (en) | 2018-03-08 |
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