JP2020023754A - 基板上に金属ホウ炭化物層を製造する方法 - Google Patents
基板上に金属ホウ炭化物層を製造する方法 Download PDFInfo
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- JP2020023754A JP2020023754A JP2019202423A JP2019202423A JP2020023754A JP 2020023754 A JP2020023754 A JP 2020023754A JP 2019202423 A JP2019202423 A JP 2019202423A JP 2019202423 A JP2019202423 A JP 2019202423A JP 2020023754 A JP2020023754 A JP 2020023754A
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- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/907—Oxycarbides; Sulfocarbides; Mixture of carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/067—Borides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
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- Chemical Kinetics & Catalysis (AREA)
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- Plasma & Fusion (AREA)
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- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
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Abstract
Description
Claims (10)
- マイクロ結晶金属ホウ炭化物相を少なくとも含む被膜で基板を被覆するためのPVD方法であって、
600℃未満の基板温度で堆積された層のX線スペクトルにおいて、金属ホウ炭化物のマイクロ結晶相が存在するという結論が得られる半値幅を有する少なくとも1つのピークが特定されるように、PVD方法において電源をパルス化することを特徴とする、方法。 - 前記PVD方法がスパッタリング法であることを特徴とする、請求項1に記載の方法。
- 前記スパッタリング法を、HIPIMS法として、100W/cm2より大きな電流密度で少なくとも一部に実施することを特徴とする、請求項2に記載の方法。
- 金属がセラミックス複合物として存在するターゲットを用いてPVD方法を実施することを特徴とする、請求項1から3のいずれか一項に記載の方法。
- 前記セラミックス複合物が金属ホウ炭化物であることを特徴とする、請求項4に記載の方法。
- 少なくとも前記PVD方法の一部の間に、被覆される基板に負バイアスを印加することを特徴とする、請求項1から5のいずれか一項に記載の方法。
- 金属ホウ炭化物が、一般式Me2BC、式中MeはCr、Zr、およびMoからなる群の中の元素、で示される材料であることを特徴とする、請求項1から6のいずれか一項に記載の方法。
- 少なくとも1つのピークが、2θX線スペクトルにおいて20°から70°で、ナノ結晶および/または非晶質相の存在が示唆される、測定値の振幅より少なくとも二倍大きな振幅を有するように、前記方法を実施することを特徴とする、請求項1から7のいずれか一項に記載の方法。
- 被膜のX線スペクトルにおいて、金属ホウ炭化物のマイクロ結晶相の存在を示唆する半値幅を有する少なくとも1つのピークが特定されることを特徴とする、金属ホウ炭化物被膜を有する工作物。
- 金属ホウ炭化物が、一般式Me2BC、式中MeはCr、Zr、およびMoからなる群の中の元素、で示される材料であることを特徴とする、請求項9に記載の工作物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102012017809.3 | 2012-09-10 | ||
DE102012017809.3A DE102012017809A1 (de) | 2012-09-10 | 2012-09-10 | Verfahren zur Herstellung einer Metallborocarbidschicht auf einem Substrat |
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JP2015530317A Division JP2015533937A (ja) | 2012-09-10 | 2013-09-09 | 基板上に金属ホウ炭化物層を製造する方法 |
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JP2020023754A true JP2020023754A (ja) | 2020-02-13 |
JP6830992B2 JP6830992B2 (ja) | 2021-02-17 |
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JP2015530317A Pending JP2015533937A (ja) | 2012-09-10 | 2013-09-09 | 基板上に金属ホウ炭化物層を製造する方法 |
JP2019202423A Active JP6830992B2 (ja) | 2012-09-10 | 2019-11-07 | 基板上に金属ホウ炭化物層を製造する方法 |
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JP2015530317A Pending JP2015533937A (ja) | 2012-09-10 | 2013-09-09 | 基板上に金属ホウ炭化物層を製造する方法 |
Country Status (8)
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US (1) | US9624571B2 (ja) |
EP (1) | EP2893053B1 (ja) |
JP (2) | JP2015533937A (ja) |
KR (2) | KR20150053959A (ja) |
CN (1) | CN104781444B (ja) |
DE (1) | DE102012017809A1 (ja) |
MX (1) | MX361794B (ja) |
WO (1) | WO2014053209A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021162096A1 (ja) | 2020-02-14 | 2021-08-19 | 大鵬薬品工業株式会社 | アシルチオウレア化合物の製造方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108028179A (zh) * | 2015-09-18 | 2018-05-11 | 应用材料公司 | 用于沉积共形bcn膜的方法 |
WO2017063744A1 (en) * | 2015-10-16 | 2017-04-20 | Oerlikon Surface Solutions Ag, Pfäffikon | New coating material comprising a ternary phase of hf-b-c |
US11823859B2 (en) | 2016-09-09 | 2023-11-21 | Ionquest Corp. | Sputtering a layer on a substrate using a high-energy density plasma magnetron |
US9951414B2 (en) | 2015-12-21 | 2018-04-24 | IonQuest LLC | Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films |
US11482404B2 (en) * | 2015-12-21 | 2022-10-25 | Ionquest Corp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
US11359274B2 (en) | 2015-12-21 | 2022-06-14 | IonQuestCorp. | Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source |
US10957519B2 (en) | 2015-12-21 | 2021-03-23 | Ionquest Corp. | Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films |
CN105441890B (zh) * | 2015-12-22 | 2018-04-17 | 西安交通大学 | 一种高温低摩擦系数硬质涂层及其制备方法 |
EP3835452B1 (fr) * | 2019-12-09 | 2024-01-31 | The Swatch Group Research and Development Ltd | Methode de fabrication d'une surface decorative |
CN114560714A (zh) * | 2022-03-14 | 2022-05-31 | 宁波杭州湾新材料研究院 | 一种纤维增韧陶瓷基复合材料及其制备方法与应用 |
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JP2009534524A (ja) * | 2006-04-21 | 2009-09-24 | コムコン・アーゲー | 被覆物 |
JP2010222655A (ja) * | 2009-03-24 | 2010-10-07 | Kobe Steel Ltd | 積層皮膜および積層皮膜被覆部材 |
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AU734809B2 (en) * | 1997-06-16 | 2001-06-21 | Robert Bosch Gmbh | Method and device for vacuum-coating a substrate |
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JP4614546B2 (ja) * | 2001-01-19 | 2011-01-19 | 畑 朋延 | 化合物薄膜の堆積方法とその装置 |
SE533395C2 (sv) * | 2007-06-08 | 2010-09-14 | Sandvik Intellectual Property | Sätt att göra PVD-beläggningar |
DE102007030735A1 (de) * | 2007-07-02 | 2009-01-08 | Walter Ag | Werkzeug mit mehrlagiger Metalloxidbeschichtung |
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DE102008020163A1 (de) * | 2008-04-22 | 2009-10-29 | Siemens Aktiengesellschaft | Kathode |
DE102009001675A1 (de) * | 2009-03-19 | 2010-09-23 | Eberhard-Karls-Universität Tübingen | Schneidwerkzeug |
DE102010028558A1 (de) * | 2010-05-04 | 2011-11-10 | Walter Ag | PVD-Hybridverfahren zum Abscheiden von Mischkristallschichten |
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- 2012-09-10 DE DE102012017809.3A patent/DE102012017809A1/de not_active Withdrawn
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- 2013-09-09 WO PCT/EP2013/002700 patent/WO2014053209A1/de active Application Filing
- 2013-09-09 KR KR1020157008824A patent/KR20150053959A/ko active Application Filing
- 2013-09-09 CN CN201380051231.9A patent/CN104781444B/zh not_active Expired - Fee Related
- 2013-09-09 JP JP2015530317A patent/JP2015533937A/ja active Pending
- 2013-09-09 US US14/427,032 patent/US9624571B2/en active Active
- 2013-09-09 KR KR1020217018261A patent/KR20210076171A/ko not_active Application Discontinuation
- 2013-09-09 EP EP13802873.3A patent/EP2893053B1/de active Active
- 2013-09-09 MX MX2015003080A patent/MX361794B/es active IP Right Grant
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JP2009534524A (ja) * | 2006-04-21 | 2009-09-24 | コムコン・アーゲー | 被覆物 |
JP2010222655A (ja) * | 2009-03-24 | 2010-10-07 | Kobe Steel Ltd | 積層皮膜および積層皮膜被覆部材 |
Non-Patent Citations (1)
Title |
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Cited By (1)
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WO2021162096A1 (ja) | 2020-02-14 | 2021-08-19 | 大鵬薬品工業株式会社 | アシルチオウレア化合物の製造方法 |
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JP2015533937A (ja) | 2015-11-26 |
MX361794B (es) | 2018-12-17 |
KR20210076171A (ko) | 2021-06-23 |
EP2893053B1 (de) | 2022-10-12 |
CN104781444B (zh) | 2018-08-07 |
US20150232982A1 (en) | 2015-08-20 |
JP6830992B2 (ja) | 2021-02-17 |
EP2893053A1 (de) | 2015-07-15 |
US9624571B2 (en) | 2017-04-18 |
WO2014053209A1 (de) | 2014-04-10 |
KR20150053959A (ko) | 2015-05-19 |
MX2015003080A (es) | 2015-11-09 |
DE102012017809A1 (de) | 2014-03-13 |
CN104781444A (zh) | 2015-07-15 |
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