JP4600786B2 - 表示装置およびその製造方法 - Google Patents

表示装置およびその製造方法 Download PDF

Info

Publication number: JP4600786B2
Authority: JP; Japan
Prior art keywords: layer; insulating film; electrode; opening; contact portion
Prior art date: 2007-12-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2008123004A

Other languages

English (en)

Japanese (ja)

Other versions

JP2009170395A (ja

Inventor

直輝林

泰信廣升

弘文藤岡

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-12-18

Filing date

2008-05-09

Publication date

2010-12-15

2008-05-09 Application filed by Sony Corp filed Critical Sony Corp

2008-05-09 Priority to JP2008123004A priority Critical patent/JP4600786B2/ja

2008-12-08 Priority to US12/330,194 priority patent/US8692455B2/en

2008-12-15 Priority to KR1020080127126A priority patent/KR101635165B1/ko

2008-12-16 Priority to CN2008101864091A priority patent/CN101465368B/zh

2009-07-30 Publication of JP2009170395A publication Critical patent/JP2009170395A/ja

2010-12-15 Application granted granted Critical

2010-12-15 Publication of JP4600786B2 publication Critical patent/JP4600786B2/ja

Status Expired - Fee Related legal-status Critical Current

2028-05-09 Anticipated expiration legal-status Critical

Links

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239000010936 titanium Substances 0.000 claims description 59
239000000463 material Substances 0.000 claims description 46
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239000000758 substrate Substances 0.000 claims description 24
229910045601 alloy Inorganic materials 0.000 claims description 20
239000000956 alloy Substances 0.000 claims description 20
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
229910052719 titanium Inorganic materials 0.000 claims description 17
229910052751 metal Inorganic materials 0.000 claims description 13
239000002184 metal Substances 0.000 claims description 13
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
238000001312 dry etching Methods 0.000 claims description 9
229910052750 molybdenum Inorganic materials 0.000 claims description 9
238000001039 wet etching Methods 0.000 claims description 6
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
239000011733 molybdenum Substances 0.000 claims description 5
239000010410 layer Substances 0.000 description 218
239000010408 film Substances 0.000 description 150
238000005401 electroluminescence Methods 0.000 description 77
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BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 5
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910021417 amorphous silicon Inorganic materials 0.000 description 5
238000005229 chemical vapour deposition Methods 0.000 description 5
239000004020 conductor Substances 0.000 description 5
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229910052710 silicon Inorganic materials 0.000 description 5
239000010703 silicon Substances 0.000 description 5
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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VXAPDXVBDZRZKP-UHFFFAOYSA-N nitric acid phosphoric acid Chemical compound O[N+]([O-])=O.OP(O)(O)=O VXAPDXVBDZRZKP-UHFFFAOYSA-N 0.000 description 4
238000004544 sputter deposition Methods 0.000 description 4
238000001771 vacuum deposition Methods 0.000 description 4
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
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238000011156 evaluation Methods 0.000 description 3
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VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
229910004541 SiN Inorganic materials 0.000 description 2
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
239000012790 adhesive layer Substances 0.000 description 2
239000003990 capacitor Substances 0.000 description 2
GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
229910052804 chromium Inorganic materials 0.000 description 2
238000000576 coating method Methods 0.000 description 2
229910052681 coesite Inorganic materials 0.000 description 2
229910052906 cristobalite Inorganic materials 0.000 description 2
238000011161 development Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000011521 glass Substances 0.000 description 2
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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238000002347 injection Methods 0.000 description 2
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235000012239 silicon dioxide Nutrition 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
239000004332 silver Substances 0.000 description 2
229910052682 stishovite Inorganic materials 0.000 description 2
229910052905 tridymite Inorganic materials 0.000 description 2
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
239000010937 tungsten Substances 0.000 description 2
229910000838 Al alloy Inorganic materials 0.000 description 1
229910052779 Neodymium Inorganic materials 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000151 deposition Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000005525 hole transport Effects 0.000 description 1
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
229910052749 magnesium Inorganic materials 0.000 description 1
239000011777 magnesium Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229920003986 novolac Polymers 0.000 description 1
238000002161 passivation Methods 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
229920002577 polybenzoxazole Polymers 0.000 description 1
238000012545 processing Methods 0.000 description 1
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239000010944 silver (metal) Substances 0.000 description 1
238000010301 surface-oxidation reaction Methods 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
230000004304 visual acuity Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Electroluminescent Light Sources (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

JP2008123004A 2007-12-18 2008-05-09 表示装置およびその製造方法 Expired - Fee Related JP4600786B2 (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP2008123004A JP4600786B2 (ja)	2007-12-18	2008-05-09	表示装置およびその製造方法
US12/330,194 US8692455B2 (en)	2007-12-18	2008-12-08	Display device and method for production thereof
KR1020080127126A KR101635165B1 (ko)	2007-12-18	2008-12-15	표시 장치 및 그 제조 방법
CN2008101864091A CN101465368B (zh)	2007-12-18	2008-12-16	显示装置及其制造方法

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2007326595		2007-12-18
JP2008123004A JP4600786B2 (ja)	2007-12-18	2008-05-09	表示装置およびその製造方法

Publications (2)

Publication Number	Publication Date
JP2009170395A JP2009170395A (ja)	2009-07-30
JP4600786B2 true JP4600786B2 (ja)	2010-12-15

Family

ID=40805831

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2008123004A Expired - Fee Related JP4600786B2 (ja)	2007-12-18	2008-05-09	表示装置およびその製造方法

Country Status (3)

Country	Link
JP (1)	JP4600786B2 (ko)
KR (1)	KR101635165B1 (ko)
CN (1)	CN101465368B (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI555436B (zh) *	2011-04-08	2016-10-21	半導體能源研究所股份有限公司	發光裝置及其製造方法
US8912547B2 (en) *	2012-01-20	2014-12-16	Semiconductor Energy Laboratory Co., Ltd.	Light-emitting device, display device, and semiconductor device
TWI479948B (zh) *	2012-02-29	2015-04-01	Innocom Tech Shenzhen Co Ltd	顯示面板及顯示裝置
US9178174B2 (en) *	2012-03-27	2015-11-03	Sony Corporation	Display device and method of manufacturing the same, method of repairing display device, and electronic apparatus
JP5954162B2 (ja) *	2012-03-28	2016-07-20	ソニー株式会社	表示装置の製造方法
KR101930847B1 (ko) *	2012-05-16	2018-12-20	삼성디스플레이 주식회사	유기 발광 표시 장치 및 그 제조방법
KR20130128940A (ko) *	2012-05-18	2013-11-27	삼성디스플레이 주식회사	유기 발광 표시 장치 및 그 제조방법
KR102132884B1 (ko) *	2013-05-21	2020-07-13	삼성디스플레이 주식회사	유기발광 디스플레이 장치 및 그 제조방법
KR102155370B1 (ko) *	2013-12-02	2020-09-22	삼성디스플레이 주식회사	유기 발광 표시장치 및 그의 제조방법
KR102164949B1 (ko)	2014-03-25	2020-10-14	삼성디스플레이 주식회사	표시 장치, 이의 제조 방법 및 리페어 방법
KR102315824B1 (ko) *	2014-06-27	2021-10-20	엘지디스플레이 주식회사	유기 발광 표시 장치 및 그의 제조 방법
JP2016062885A (ja) *	2014-09-22	2016-04-25	ソニー株式会社	表示装置およびその製造方法、ならびに電子機器
KR102320591B1 (ko) *	2014-10-30	2021-11-03	엘지디스플레이 주식회사	유기전계발광표시장치와 이의 제조방법
KR102374833B1 (ko) *	2014-11-25	2022-03-15	엘지디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
KR102426691B1 (ko) *	2015-02-05	2022-07-28	삼성디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
JP6457879B2 (ja) *	2015-04-22	2019-01-23	株式会社ジャパンディスプレイ	表示装置及びその製造方法
KR102465826B1 (ko) *	2015-10-29	2022-11-09	엘지디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
KR102578834B1 (ko) *	2015-11-30	2023-09-15	엘지디스플레이 주식회사	유기 발광 표시 장치
JP6676998B2 (ja) *	2016-02-10	2020-04-08	セイコーエプソン株式会社	電気光学装置、および電子機器
KR101878187B1 (ko) *	2016-07-29	2018-07-13	엘지디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
KR20180046229A (ko) *	2016-10-27	2018-05-08	엘지디스플레이 주식회사	유기 발광 표시 장치 및 그 제조 방법
KR102410500B1 (ko) *	2017-11-30	2022-06-16	엘지디스플레이 주식회사	전계 발광 표시장치
JP7179517B2 (ja) *	2018-03-01	2022-11-29	ＴｉａｎｍａＪａｐａｎ株式会社	表示装置
CN113284921B (zh) *	2020-02-19	2023-05-09	合肥鑫晟光电科技有限公司	阵列基板及显示装置
CN114141826B (zh) *	2021-11-16	2023-08-01	深圳市华星光电半导体显示技术有限公司	显示面板及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004071365A (ja) *	2002-08-07	2004-03-04	Hitachi Ltd	有機発光表示装置
JP2005011810A (ja) *	2003-06-16	2005-01-13	Eastman Kodak Co	上面発光型ｏｌｅｄデバイスの製造方法
JP2006113571A (ja) *	2004-09-15	2006-04-27	Semiconductor Energy Lab Co Ltd	半導体装置
JP2007141844A (ja) *	2005-11-15	2007-06-07	Samsung Electronics Co Ltd	表示装置とその製造方法
JP2007287354A (ja) *	2006-04-12	2007-11-01	Hitachi Displays Ltd	有機ｅｌ表示装置
JP2009124108A (ja) *	2007-11-16	2009-06-04	Samsung Mobile Display Co Ltd	有機発光ディスプレイ装置

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2006030937A1 (en) *	2004-09-15	2006-03-23	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device
JP5228910B2 (ja) *	2006-06-19	2013-07-03	ソニー株式会社	発光表示装置およびその製造方法

2008
- 2008-05-09 JP JP2008123004A patent/JP4600786B2/ja not_active Expired - Fee Related
- 2008-12-15 KR KR1020080127126A patent/KR101635165B1/ko active IP Right Grant
- 2008-12-16 CN CN2008101864091A patent/CN101465368B/zh active Active

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004071365A (ja) *	2002-08-07	2004-03-04	Hitachi Ltd	有機発光表示装置
JP2005011810A (ja) *	2003-06-16	2005-01-13	Eastman Kodak Co	上面発光型ｏｌｅｄデバイスの製造方法
JP2006113571A (ja) *	2004-09-15	2006-04-27	Semiconductor Energy Lab Co Ltd	半導体装置
JP2007141844A (ja) *	2005-11-15	2007-06-07	Samsung Electronics Co Ltd	表示装置とその製造方法
JP2007287354A (ja) *	2006-04-12	2007-11-01	Hitachi Displays Ltd	有機ｅｌ表示装置
JP2009124108A (ja) *	2007-11-16	2009-06-04	Samsung Mobile Display Co Ltd	有機発光ディスプレイ装置

Also Published As

Publication number	Publication date
CN101465368A (zh)	2009-06-24
KR20090066223A (ko)	2009-06-23
CN101465368B (zh)	2011-07-27
KR101635165B1 (ko)	2016-06-30
JP2009170395A (ja)	2009-07-30

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