JP4550503B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4550503B2
JP4550503B2 JP2004214136A JP2004214136A JP4550503B2 JP 4550503 B2 JP4550503 B2 JP 4550503B2 JP 2004214136 A JP2004214136 A JP 2004214136A JP 2004214136 A JP2004214136 A JP 2004214136A JP 4550503 B2 JP4550503 B2 JP 4550503B2
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Japan
Prior art keywords
electrode
end side
adhesive member
convex portion
conductive adhesive
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Expired - Fee Related
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JP2004214136A
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JP2006040928A (ja
Inventor
聡 今井
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Renesas Electronics Corp
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Renesas Electronics Corp
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Description

この発明は、半導体チップ上の電極およびパッケージ外部に露出されたリードの間をフレームで接続する半導体装置に関する。
従来、半導体チップ上の電極およびリードの間の接続は、金やアルミニウムのワイヤを用いたワイヤボンディングにより行われていた。ワイヤと半導体チップ上の電極との接合およびワイヤとリードとの接合は、接続する金属をお互いに加圧し、超音波振動または熱を加え、もしくはその両方を与えて接合することにより行われる。
一方、ワイヤによる接続では電気抵抗が高く、効率的な電気接続が行えていなかった。このため、ワイヤに替えて例えばクリップ状のフレームを用いて低抵抗の電気接続を得ていた。
例えば、半導体チップ（半導体ペレット）上の電極とリードとを接続する半導体パッケージ用接続導体として、帯状をなす銅または銅合金箔からなる導電性フレーム（クリップフレーム）を用いた半導体パッケージが記載されている。また、クリップフレームと半導体チップ上の電極との接合およびクリップフレームとリードとの接合に、導電性接着部材が用いられていた（例えば、特許文献１参照）。
特開２００１−２７４２０６号公報（図１、図２）
しかしながら、従来の半導体装置では、半導体チップ上の電極に設けられた導電性接着部材（例えば、Ａｇペースト）に対して、クリップフレームを圧着したときに、導電性接着部材が半導体チップ上の電極領域から外れ、半導体チップ表面上に広がり、その結果、Ａｇマイグレーションが生じ、クリップフレームと半導体チップの電極間の接合部分の抵抗値等の電気特性が変わってしまい、半導体装置の品質低下を招いていた。
また、半導体チップ上に複数の電極が互いに隣接して配置されていた場合、クリップフレームの圧着によって導電性接着部材が横に広がってしまうことにより、電極間の距離が狭くなり、電極間でショートしてしまうおそれがあった。また、半導体チップおよびクリップフレームは導電性接着部材を挟んでパッケージされるが、導電性接着部材が半導体チップの表面上に広がることにより、導電性接着部材が露出してしまう。この導電性接着部材は、金属導体である半導体チップやクリップフレームと比較して、パッケージの樹脂材との密着力が小さいため、例えば、半導体装置にリフロー等の熱処理を施した場合、半導体チップとパッケージ樹脂との界面で樹脂の剥離が生じ、この部分で耐湿性劣化が生じていた。
この発明は、このような問題点を解決するためになされたものであり、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる半導体装置を提供することを目的とする。
本発明に係る半導体装置は、半導体チップが樹脂材料のパッケージによって固定された半導体装置であって、上記半導体チップの表面上に設けられた電極、上記半導体チップの表面上であって、上記電極の外周に設けられた凸部、上記パッケージによって固定され、上記パッケージの外部に一端側が露出されたリード、一端側が該リードの他端側に接続し、他端側が上記電極に接続し、上記リードおよび上記電極の間を電気接続する導電性フレーム、およびこの導電性フレームの他端側および上記電極間であって、上記凸部に囲まれた領域に導電性接着部材を有し、上記凸部の高さは、上記凸部に囲まれた領域の体積が、上記電極および上記導電性接着部材の体積の和に相当するように形成され、上記凸部は、上記電極と同一部材で形成されていることを特徴とするものである。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
また、導電性接着部材は、導電性フレームの他端側および電極間で圧着されて、上記導電性フレームの他端側および上記電極間を、凸部に囲まれた領域で接着するようにしてもよい。
また、導電性接着部材は、銀ペーストで形成されてもよい。
半導体チップの表面上の凸部とは別の凸部が、リードの他端側に、上記リードの他端側および導電性フレームの一端側の間の接続領域を四方で囲って設けられ、導電性フレームの一端側および上記リードの他端側の間であって、上記別の凸部に囲われた領域に導電性接着部材を更に有してもよい。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
この発明により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる半導体装置を提供することができる。
発明の実施の形態１．
本発明の実施の形態１について、図に基づいて説明する。
図１は、本発明の実施の形態１にかかる半導体装置の構成および製造工程を示す図である。
図１（ａ）において、ダイパッド１の周囲には複数のリード２Ａ、２Ｂが設けられている。ダイパッド１の表面上に、例えば銀ペーストにより形成されたゲル状の導電性接着部材３Ａをディスペンサによって塗布する。なお、導電性接着部材３Ａは、ゲル状のものではなく、シート状のものを用いて構わない。なお、リード２Ａ、２Ｂは、後述のパッケージによって固定され、パッケージの外部に一端側が露出される。
次に、図１（ｂ）において、半導体チップ４を、塗布された導電性接着部材３Ａによってダイパッド１上に固定する。半導体チップ４の表面上には、例えばアルミニウムやアルミニウム合金からなる電極５Ａ、５Ｂが設けられている。次に、電極５Ｂの外周に凸部６を電極５Ｂの高さよりも高く設ける。
次に、図１（ｃ）において、例えばゲル状の導電性接着部材３Ｂ、３Ｃを、ディスペンサによって、リード２Ｂの他端側および電極５Ｂの表面上に塗布する。導電性接着部材３Ｃは、凸部６に囲まれた領域内に設けられる。好ましくは、凸部６に囲まれた領域の体積が、電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するようにする。このように凸部６の高さを設定すれば、後述のように、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらない。
次に、図１（ｄ）において、電極５Ａおよびリード２Ａ間を例えば金のワイヤ７を用い、ワイヤボンディングによって電気接続する。また、電極５Ｂおよびリード２Ｂの間を、帯板状の銅または銅合金箔等からなる導電性フレーム８で電気接続する。具体的には、導電性フレーム８の一端側はリード２Ｂの他端側に接続し、導電性フレーム８の他端側は電極５Ｂに接続し、リード２Ｂおよび電極５Ｂの間を電気接続する。また、このとき、導電性接着部材３Ｃは、導電性フレーム８の他端側および電極５Ｂ間であって、凸部６に囲まれた領域に設けられている。また、導電性接着部材３Ｃは、導電性フレーム８の他端および電極５Ｂ間で圧着されて、導電性フレーム８の他端側および電極５Ｂの間を凸部６に囲まれた領域で接着している。このとき、凸部６に囲まれた領域の体積が、電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するようにされているので、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらない。
次に、図１（ｅ）において、半導体チップ４等の部材を樹脂材料のパッケージ９によって、パッケージ９の外部にリード２Ａ、２Ｂの一端側が露出されるように固定する。
このような製造工程を経て、本発明の実施の形態１に係る半導体装置を得ることができる。
すなわち、本発明の実施の形態１に係る半導体装置は、半導体チップ４が樹脂材料のパッケージ９によって固定された半導体装置であって、半導体チップ４の表面上に設けられた電極５Ｂ、半導体チップ４の表面上であって、電極５Ｂの外周に設けられた凸部６、パッケージ９によって固定され、パッケージ９の外部に一端側が露出されたリード２Ｂ、一端側がリード２Ｂの他端側に接続し、他端側が電極５Ｂに接続し、リード２Ｂおよび電極５Ｂの間を電気接続する導電性フレーム８、および導電性フレーム８の他端側および電極５Ｂ間であって、凸部６に囲まれた領域に導電性接着部材３Ｃを有している。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
また、更に、導電性接着部材が半導体チップ表面上に広がらないように抑制することにより、半導体チップ４上で電極５Ｂとこれに隣接する電極５Ａとのショートを防止することができる。
また、凸部６の高さを、凸部６に囲まれた領域の体積が電極５Ｂおよび導電性接着部材３Ｃの体積の和に相当するように形成すれば、導電性接着部材３Ｃが電極５Ｂ及び導電性フレーム８の他端側の間で圧着されたとき、凸部６および導電性接着部材３Ｃの表面の高さが略同一となり、導電性接着部材３Ｃが電極５Ｂおよび導電性フレーム８の他端側の間を確実に電気接続しながら、導電性接着部材３Ｃが凸部６に囲われた領域外に広がらないように抑制できる。
また、凸部６は、電極５Ｂと同一部材で形成されてもよく、これにより、製造工程の短縮化を図ることができる。
発明の実施の形態２．
本発明の実施の形態２について、図に基づいて説明する。
図２は、本発明の実施の形態２にかかる半導体装置の構成および製造工程を示す図である。
図２（ａ）〜（ｅ）において、図１（ａ）〜（ｅ）と相違する部分について、説明する。すなわち、図２（ｂ）において、図１（ｂ）で電極５Ｂの外周に設けるのと同様に、リード２Ｂの他端側にも、リード２Ｂの他端側および導電性フレーム８の一端側の間の接続領域を四方で囲って凸部６Ａを更に設ける。次に、図２（ｃ）において、ゲル状の導電性接着部材３Ｄをディスペンサによって塗布する。次に、図２（ｄ）において、導電性フレーム８の一端側を、導電性接着部材３Ｄを介してリード２Ｂに、他端側を、導電性接着部材３Ｃを介して電極５Ｂに接続する。
このような製造工程を経て、本発明の実施の形態２に係る半導体装置を得ることができる。
すなわち、本発明の実施の形態２に係る半導体装置は、半導体チップ４の表面上の凸部６とは別の凸部６Ａが、リード２Ｂの他端側に、リード２Ｂの他端側および導電性フレーム８の一端側の間の接続領域を四方で囲って設けられ、導電性フレーム８の一端側およびリード２Ｂの他端側の間であって、別の凸部６Ａに囲われた領域に導電性接着部材３Ｄを更に有するものである。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ａｇ等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
本発明の実施の形態１にかかる半導体装置の構成および製造工程を示す図である。 本発明の実施の形態２にかかる半導体装置の構成および製造工程を示す図である。
符号の説明
１ ダイパッド、 ２Ａ、２Ｂ リード、 ３Ａ、３Ｂ、３Ｃ、３Ｄ 導電性接着部材、 ４ 半導体チップ、 ５Ａ、５Ｂ 電極、 ６、６Ａ 凸部、７ ワイヤ、 ８導電性フレーム、 ９ パッケージ。

Claims (4)

  1. 半導体チップが樹脂材料のパッケージによって固定された半導体装置であって、
    上記半導体チップの表面上に設けられた電極、
    上記半導体チップの表面上であって、上記電極の外周に設けられた凸部、
    上記パッケージによって固定され、上記パッケージの外部に一端側が露出されたリード、
    一端側が該リードの他端側に接続し、他端側が上記電極に接続し、上記リードおよび上
    記電極の間を電気接続する導電性フレーム、
    および
    この導電性フレームの他端側および上記電極間であって、上記凸部に囲まれた領域に導
    電性接着部材を有し、
    上記凸部の高さは、上記凸部に囲まれた領域の体積が、上記電極および上記導電性接着部材の体積の和に相当するように形成され、
    上記凸部は、上記電極と同一部材で形成されていることを特徴とする半導体装置。
  2. 導電性接着部材は、導電性フレームの他端側および電極間で圧着されて、上記導電性フレームの他端側および上記電極間を、凸部に囲まれた領域で接着することを特徴とする請求項１に記載の半導体装置。
  3. 導電性接着部材は、銀ペーストで形成されたことを特徴とする請求項１又は２に記載の半導装置。
  4. 半導体チップの表面上の凸部とは別の凸部が、リードの他端側に、上記リードの他端側および導電性フレームの一端側の間の接続領域を四方で囲って設けられ、
    導電性フレームの一端側および上記リードの他端側の間であって、上記別の凸部に囲われた領域に導電性接着部材を更に有することを特徴とする請求項１〜３のいずれか１項に記載の半導体装置。
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JPH01135737U (ja) * 1988-03-09 1989-09-18
JP2001127100A (ja) * 1999-10-26 2001-05-11 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2003115512A (ja) * 2001-10-03 2003-04-18 Sanyo Electric Co Ltd 半導体装置
JP2003234382A (ja) * 2002-02-06 2003-08-22 Shindengen Electric Mfg Co Ltd 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01135737U (ja) * 1988-03-09 1989-09-18
JP2001127100A (ja) * 1999-10-26 2001-05-11 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2003115512A (ja) * 2001-10-03 2003-04-18 Sanyo Electric Co Ltd 半導体装置
JP2003234382A (ja) * 2002-02-06 2003-08-22 Shindengen Electric Mfg Co Ltd 半導体装置

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