JP2006040928A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2006040928A JP2006040928A JP2004214136A JP2004214136A JP2006040928A JP 2006040928 A JP2006040928 A JP 2006040928A JP 2004214136 A JP2004214136 A JP 2004214136A JP 2004214136 A JP2004214136 A JP 2004214136A JP 2006040928 A JP2006040928 A JP 2006040928A
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- electrode
- end side
- adhesive member
- conductive adhesive
- lead
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Abstract
半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ag等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる半導体装置を提供すること。
【解決手段】
本発明にかかる半導体装置は、半導体チップ4が樹脂材料のパッケージ9によって固定された半導体装置であって、半導体チップ4の表面上に設けられた電極5B、半導体チップ4の表面上であって、電極5Bの外周に設けられた凸部6、パッケージ8によって固定され、パッケージ8の外部に一端側が露出されたリード2B、一端側がリード2Bの他端側に接続し、他端側が電極5Bに接続し、リード2Bおよび電極5Bの間を電気接続する導電性フレーム8、導電性フレーム8の他端側および電極5B間であって、凸部6に囲まれた領域に導電性接着部材3Cを有する。
【選択図】 図1
Description
例えば、半導体チップ(半導体ペレット)上の電極とリードとを接続する半導体パッケージ用接続導体として、帯状をなす銅または銅合金箔からなる導電性フレーム(クリップフレーム)を用いた半導体パッケージが記載されている。また、クリップフレームと半導体チップ上の電極との接合およびクリップフレームとリードとの接合に、導電性接着部材が用いられていた(例えば、特許文献1参照)。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材が広がらないように抑制し、Ag等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ag等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
本発明の実施の形態1について、図に基づいて説明する。
図1は、本発明の実施の形態1にかかる半導体装置の構成および製造工程を示す図である。
図1(a)において、ダイパッド1の周囲には複数のリード2A、2Bが設けられている。ダイパッド1の表面上に、例えば銀ペーストにより形成されたゲル状の導電性接着部材3Aをディスペンサによって塗布する。なお、導電性接着部材3Aは、ゲル状のものではなく、シート状のものを用いて構わない。なお、リード2A、2Bは、後述のパッケージによって固定され、パッケージの外部に一端側が露出される。
このような製造工程を経て、本発明の実施の形態1に係る半導体装置を得ることができる。
すなわち、本発明の実施の形態1に係る半導体装置は、半導体チップ4が樹脂材料のパッケージ9によって固定された半導体装置であって、半導体チップ4の表面上に設けられた電極5B、半導体チップ4の表面上であって、電極5Bの外周に設けられた凸部6、パッケージ9によって固定され、パッケージ9の外部に一端側が露出されたリード2B、一端側がリード2Bの他端側に接続し、他端側が電極5Bに接続し、リード2Bおよび電極5Bの間を電気接続する導電性フレーム8、および導電性フレーム8の他端側および電極5B間であって、凸部6に囲まれた領域に導電性接着部材3Cを有している。
また、更に、導電性接着部材が半導体チップ表面上に広がらないように抑制することにより、半導体チップ4上で電極5Bとこれに隣接する電極5Aとのショートを防止することができる。
本発明の実施の形態2について、図に基づいて説明する。
図2は、本発明の実施の形態2にかかる半導体装置の構成および製造工程を示す図である。
図2(a)〜(e)において、図1(a)〜(e)と相違する部分について、説明する。すなわち、図2(b)において、図1(b)で電極5Bの外周に設けるのと同様に、リード2Bの他端側にも、リード2Bの他端側および導電性フレーム8の一端側の間の接続領域を四方で囲って凸部6Aを更に設ける。次に、図2(c)において、ゲル状の導電性接着部材3Dをディスペンサによって塗布する。次に、図2(d)において、導電性フレーム8の一端側を、導電性接着部材3Dを介してリード2Bに、他端側を、導電性接着部材3Cを介して電極5Bに接続する。
このような製造工程を経て、本発明の実施の形態2に係る半導体装置を得ることができる。
このような構成により、半導体チップ上の電極および導電性フレームの間の導電性接着部材に加え、更にリードおよび導電性フレームの間の導電性接着部材が、広がらないように抑制し、Ag等のマイグレーションによる電気特性変化を防止することができ、パッケージの剥離を防止することができる。
Claims (7)
- 半導体チップが樹脂材料のパッケージによって固定された半導体装置であって、
上記半導体チップの表面上に設けられた電極、
上記半導体チップの表面上であって、上記電極の外周に設けられた凸部、
上記パッケージによって固定され、上記パッケージの外部に一端側が露出されたリード、
一端側が該リードの他端側に接続し、他端側が上記電極に接続し、上記リードおよび上記電極の間を電気接続する導電性フレーム、
および
この導電性フレームの他端側および上記電極間であって、上記凸部に囲まれた領域に導電性接着部材を有することを特徴とする半導体装置。 - 導電性接着部材は、導電性フレームの他端側および電極間で圧着されて、上記導電性フレームの他端側および上記電極間を、凸部に囲まれた領域で接着することを特徴とする請求項1に記載の半導体装置。
- 凸部の高さは、
凸部に囲まれた領域の体積が、電極および導電性接着部材の体積の和に相当するように形成されたことを特徴とする請求項2に記載の半導体装置。 - 凸部は、導電性接着部材が電極及び導電性フレームの他端側の間で圧着されたとき、上記導電性接着部材が上記凸部に囲われた領域外に広がらない高さに形成されたことを特徴とする請求項2に記載の半導体装置。
- 凸部は、電極と同一部材で形成されたことを特徴とする請求項1に記載の半導体装置。
- 導電性接着部材は、銀ペーストで形成されたことを特徴とする請求項1に記載の半導体装置。
- 半導体チップの表面上の凸部とは別の凸部が、リードの他端側に、上記リードの他端側および導電性フレームの一端側の間の接続領域を四方で囲って設けられ、
導電性フレームの一端側および上記リードの他端側の間であって、上記別の凸部に囲われた領域に導電性接着部材を更に有することを特徴とする請求項1に記載の半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012212712A (ja) * | 2011-03-30 | 2012-11-01 | Toshiba Corp | 半導体装置の実装構造及び半導体装置の実装方法 |
JP2013143552A (ja) * | 2012-01-12 | 2013-07-22 | Mitsubishi Electric Corp | 半導体装置 |
KR200478914Y1 (ko) * | 2015-04-23 | 2015-12-03 | 제엠제코(주) | 반도체 패키지 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01135737U (ja) * | 1988-03-09 | 1989-09-18 | ||
JP2001127100A (ja) * | 1999-10-26 | 2001-05-11 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2003115512A (ja) * | 2001-10-03 | 2003-04-18 | Sanyo Electric Co Ltd | 半導体装置 |
JP2003234382A (ja) * | 2002-02-06 | 2003-08-22 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH01135737U (ja) * | 1988-03-09 | 1989-09-18 | ||
JP2001127100A (ja) * | 1999-10-26 | 2001-05-11 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
JP2003115512A (ja) * | 2001-10-03 | 2003-04-18 | Sanyo Electric Co Ltd | 半導体装置 |
JP2003234382A (ja) * | 2002-02-06 | 2003-08-22 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012212712A (ja) * | 2011-03-30 | 2012-11-01 | Toshiba Corp | 半導体装置の実装構造及び半導体装置の実装方法 |
JP2013143552A (ja) * | 2012-01-12 | 2013-07-22 | Mitsubishi Electric Corp | 半導体装置 |
KR200478914Y1 (ko) * | 2015-04-23 | 2015-12-03 | 제엠제코(주) | 반도체 패키지 |
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